Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division P6SMB82AHE3_A/I

Part No.:
P6SMB82AHE3_A/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixP6SMB82AHE3_A/I.pdf
Description:
TVS DIODE 70.1VWM 113VC DO214AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,227

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

P6SMB82AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on power and signal lines. It features a 70.1 V stand-off voltage (VWM), 77.9–86.1 V breakdown voltage (VBR) at 1 mA, 113 V maximum clamping voltage (VC) at 5.3 A peak pulse current (IPPM), and 600 W peak pulse power capability with 10/1000 μs waveform - used to protect MOSFETs, ICs, and sensor interfaces in automotive and industrial power supplies.

For engineers reviewing the P6SMB82AHE3_A/I datasheet, P6SMB82AHE3_A/I pinout, P6SMB82AHE3_A/I application, or P6SMB82AHE3_A/I equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification status, 150 °C max junction temperature, low incremental surge resistance, and compatibility with automated SMT placement on 0.2" × 0.2" copper pads.

Technical Context

This TVS diode operates as a voltage-clamping protection device triggered by transient overvoltage events. Its glass-passivated junction enables fast response time (<1 ns), low leakage (<1 μA at VWM), and stable breakdown behavior under repetitive 10/1000 μs surges at 0.01% duty cycle.

The device is rated for 100 A non-repetitive forward surge current (IFSM, 8.3 ms half-sine), exhibits +0.105 %/°C temperature coefficient of VBR, and achieves thermal resistance of 100 °C/W (junction-to-ambient) when mounted per recommended pad layout - critical for thermal management in compact PCB designs.

Key Specifications

Parameter Value and Actual Design Meaning
VWM (Stand-off) 70.1 V - maximum continuous reverse operating voltage before clamping initiates
VBR (Breakdown) 77.9–86.1 V at 1 mA - precise voltage threshold where avalanche conduction begins
VC (Clamping) 113 V at 5.3 A IPPM - peak voltage seen by protected circuit during worst-case transient
PPPM 600 W - surge energy handling capacity with standardized 10/1000 μs waveform
TJ max +150 °C - maximum allowable junction temperature for reliable long-term operation
RθJA 100 °C/W - thermal resistance defining temperature rise per watt dissipated in still air
AEC-Q101 Qualified - validated for automotive-grade reliability including temperature cycling, HTRB, and ESD

Pinout & Package

Package: SMB (DO-214AA), surface-mount, matte tin-plated leads, RoHS-compliant and halogen-free (HE3 suffix), MSL Level 1 (260 °C reflow peak).

Pin/Terminal Circuit Role Design Meaning
Cathode (banded end) Protected line connection Connected to line requiring overvoltage protection; reverse-biased during normal operation
Anode Reference/ground connection Tied to system ground or lower-potential rail; completes clamping path during transient

Key Features

Feature Design Value
600 W peak pulse power Handles high-energy transients without degradation, enabling robust protection in 12 V/24 V automotive systems
Glass passivated junction Ensures stable VBR tolerance and long-term reliability under thermal cycling and humidity stress
AEC-Q101 qualified (HE3 suffix) Validated for automotive applications including engine control units and ADAS sensor interfaces
Low profile SMB package Enables high-density PCB layouts while maintaining 0.2" × 0.2" thermal pad requirements for power dissipation
Fast response time Sub-nanosecond turn-on limits voltage overshoot during ESD or inductive switching events

Applications

Automotive Power Supply Protection Industrial Sensor Interface Protection

Use Scenario: Protecting 12 V battery-fed ECUs against load dump and alternator ripple transients.

IC Role / Device Role / Timing Role: Unidirectional TVS clamping device placed between power rail and ground.

Use Value: Limits transient voltage to ≤113 V, preventing damage to downstream LDOs and microcontrollers rated for 16 V absolute max.

Use Scenario: Safeguarding analog output lines of pressure/temperature sensors in factory automation PLCs.

IC Role / Device Role / Timing Role: Line-side transient suppressor on 4–20 mA or 0–10 V signal paths.

Use Value: Maintains signal integrity by clamping induced surges from nearby motor drives without affecting DC accuracy.

Consumer Power Adapter Input Stage Telecom DC Power Feeds

Use Scenario: Secondary-side overvoltage suppression in AC/DC adapters for smart home devices.

IC Role / Device Role / Timing Role: Standoff-rated protector on regulated 5 V/9 V/12 V outputs.

Use Value: Absorbs coupling transients from primary-side switching noise, meeting IEC 61000-4-5 Level 3 immunity.

Use Scenario: DC input protection for PoE-powered network switches and base station radios.

IC Role / Device Role / Timing Role: Front-end TVS on 48 V DC feed lines before DC/DC converters.

Use Value: Withstands repeated 10/1000 μs surges up to 600 W, ensuring uptime in outdoor telecom cabinets.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMAJ85A-E3/52 Higher VWM (72.2 V), higher VC (121 V), same SMB package and 600 W rating Less tight clamping margin; suitable where 121 V clamping is acceptable Select when tighter VBR tolerance is not required and higher VWM margin is preferred
1.5SMC82A Same VWM/VBR/VC specs, but in larger SMC (DO-214AB) package with higher RθJA (60 °C/W) Requires more PCB area; better thermal performance only with larger pads Choose only if existing layout uses SMC footprint or higher thermal mass is available

Compared with SMAJ85A-E3/52 and 1.5SMC82A, P6SMB82AHE3_A/I delivers tighter VBR tolerance (±5%), AEC-Q101 qualification, and optimized thermal design for space-constrained automotive modules - making it preferred for new designs targeting functional safety compliance.

Availability

P6SMB82AHE3_A/I is available at Aetrix Electronics and suitable for automotive electronics, industrial sensor systems, and telecom power supply designs requiring stable component supply, AEC-Q101 validation, and consistent surge immunity performance.

Supply support for P6SMB82AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.

The P6SMB Series targets cost-sensitive yet high-reliability transient suppression needs across automotive, industrial, and consumer markets - delivering standardized 600 W surge capability in compact SMB packaging with AEC-Q101 variants.

FAQ

What is the clamping voltage of P6SMB82AHE3_A/I at its rated peak pulse current?

The P6SMB82AHE3_A/I has a maximum clamping voltage (VC) of 113 V at 5.3 A peak pulse current (IPPM) under 10/1000 μs waveform conditions. This value defines the upper voltage limit imposed on protected circuits during transient events and is measured with the device mounted on 0.2" × 0.2" copper pads per the datasheet test condition. The P6SMB82AHE3_A/I maintains this clamping performance across its specified operating temperature range.

Is P6SMB82AHE3_A/I qualified for automotive applications?

Yes, P6SMB82AHE3_A/I is AEC-Q101 qualified, as indicated by the "HE3" suffix and documented in Vishay's ordering information and mechanical data tables. This qualification covers stress tests including temperature cycling, high-temperature reverse bias (HTRB), and electrostatic discharge (ESD), confirming suitability for under-hood and chassis-mounted automotive electronics. The P6SMB82AHE3_A/I meets these requirements without derating in standard mounting configurations.

What does the "_A/I" suffix mean in P6SMB82AHE3_A/I?

The "_A/I" suffix in P6SMB82AHE3_A/I denotes packaging configuration: "A" indicates the device is unidirectional, and "I" specifies 13-inch diameter plastic tape and reel delivery (3200 units per reel). This matches Vishay's ordering convention where "H" = 7-inch reel and "I" = 13-inch reel. The P6SMB82AHE3_A/I is therefore a unidirectional, AEC-Q101-qualified TVS diode supplied in high-volume SMT-ready format.

How does P6SMB82AHE3_A/I compare to bidirectional variants like P6SMB82CA?

P6SMB82AHE3_A/I is unidirectional with cathode marking and asymmetric conduction - it conducts only during reverse overvoltage, whereas P6SMB82CA is bidirectional and symmetrical for AC line protection. The P6SMB82AHE3_A/I offers tighter VBR tolerance (±5%) and AEC-Q101 qualification, while P6SMB82CA lacks automotive qualification and has higher leakage in both directions. They are not interchangeable without circuit redesign.

What is the thermal resistance of P6SMB82AHE3_A/I in typical PCB mounting?

The P6SMB82AHE3_A/I has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on minimum recommended 0.2" × 0.2" copper pads per terminal, as defined in the Vishay datasheet. This value assumes still-air conditions and directly impacts safe power dissipation limits - for example, at 50 °C ambient, the device can continuously dissipate up to 5.0 W only if heatsinking is enhanced beyond standard layout. The P6SMB82AHE3_A/I thermal performance is optimized for short-duration surge events rather than steady-state power.

P6SMB82AHE3_A/I Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AA, SMB
Series:
P6SMB, TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
70.1V
Voltage - Breakdown (Min):
77.9V
Voltage - Clamping (Max) @ Ipp:
113V
Current - Peak Pulse (10/1000µs):
5.3A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMB)

P6SMB82AHE3_A/I FAQ

1.How can I place an order for P6SMB82AHE3_A/I through Aetrix?

Please submit a Request for Quotation (RFQ) for P6SMB82AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for P6SMB82AHE3_A/I reliable?

The price and inventory of P6SMB82AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P6SMB82AHE3_A/I is usually 5 days.

3.What payment methods are accepted for P6SMB82AHE3_A/I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P6SMB82AHE3_A/I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for P6SMB82AHE3_A/I?

P6SMB82AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your P6SMB82AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for P6SMB82AHE3_A/I?

For technical support, including P6SMB82AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P6SMB82AHE3_A/I requirements.

6.How does Aetrix verify that P6SMB82AHE3_A/I is sourced from the original manufacturer or authorized distributors?

All P6SMB82AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P6SMB82AHE3_A/I meets industry standards.

7.What is the process for return or replacement of P6SMB82AHE3_A/I?

All P6SMB82AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with P6SMB82AHE3_A/I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The P6SMB82AHE3_A/I part is unused and in its original packaging.

Return procedure for P6SMB82AHE3_A/I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

P6SMB82AHE3_A/I Tags

  • P6SMB82AHE3_A/I
  • P6SMB82AHE3_A/I PDF
  • P6SMB82AHE3_A/I Datasheet
  • P6SMB82AHE3_A/I Specifications
  • P6SMB82AHE3_A/I Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division P6SMB82AHE3_A/I
  • Buy P6SMB82AHE3_A/I
  • P6SMB82AHE3_A/I Price
  • P6SMB82AHE3_A/I Distributor
  • P6SMB82AHE3_A/I Supplier
  • P6SMB82AHE3_A/I Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER