Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division P6SMB82AHM3_B/H

Part No.:
P6SMB82AHM3_B/H
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixP6SMB82AHM3_B/H.pdf
Description:
600W,82V 5%,UNIDIR,SMB TVS
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,285

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

P6SMB82AHM3_B/H from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, rated for 82 V breakdown voltage (VBR = 77.9–86.1 V at 1 mA), 113 V maximum clamping voltage (VC) at 5.3 A peak pulse current, and 600 W peak pulse power with 10/1000 µs waveform - deployed for overvoltage protection of MOSFETs and ICs in automotive power supply rails.

For engineers reviewing the P6SMB82AHM3_B/H datasheet, P6SMB82AHM3_B/H pinout, P6SMB82AHM3_B/H application, or P6SMB82AHM3_B/H equivalent, key selection criteria include clamping performance under 10/1000 µs surge, AEC-Q101 qualification status, unidirectional polarity marking, thermal resistance (RθJA = 100 °C/W), and halogen-free RoHS compliance per HM3 suffix.

Technical Context

This TVS diode operates as a unidirectional clamping device with cathode-band polarity identification, leveraging glass-passivated junction technology for stable avalanche behavior and low incremental surge resistance. Its 10/1000 µs waveform response enables robust suppression of inductive switching transients and ESD events up to 600 W without degradation.

Designed for surface-mount assembly on 0.2" × 0.2" copper pads, it meets MSL Level 1 per J-STD-020 (peak reflow ≤ 260 °C) and supports automotive-grade reliability via AEC-Q101 qualification - confirmed by HM3_B suffix indicating halogen-free, RoHS-compliant, and AEC-Q101-qualified construction.

Key Specifications

Parameter Value and Actual Design Meaning
VBR (min/max)77.9 V / 86.1 V at IT = 1 mA - defines precise avalanche onset range for predictable clamping threshold
VWM70.1 V - maximum continuous reverse operating voltage before leakage exceeds 1 µA
VC @ IPPM113 V at 5.3 A - clamping voltage during 600 W transient, limiting downstream voltage stress
PPPM600 W - peak pulse power handling with 10/1000 µs waveform and 0.01 % duty cycle
RθJA100 °C/W - junction-to-ambient thermal resistance under standard PCB pad layout (0.2" × 0.2")
Operating TJ-65 °C to +150 °C - validated junction temperature range for under-hood automotive use
AEC-Q101Qualified - certified for automotive applications per stress test requirements including HTOL, TC, AC/DC HAST

Pinout & Package

Package: SMB (DO-214AA), surface-mount, matte tin-plated leads, 0.220" × 0.130" footprint, MSL Level 1 compliant.

Pin/Terminal Circuit Role Design Meaning
AnodeForward conduction terminalConnected to circuit ground or lower-potential node in unidirectional clamp configuration
Cathode (banded end)Avalanche breakdown terminalConnected to protected line (e.g., 12 V rail); band identifies polarity for correct PCB orientation

Key Features

Feature Design Value
600 W peak pulse powerHandles high-energy transients (e.g., ISO 7637-2 Pulse 1/2a/5a) without failure in automotive ECUs
AEC-Q101 qualified (HM3_B)Validated for automotive electronics including body control modules and ADAS power supplies
Glass passivated junctionEnsures stable VBR tolerance (±5 %) and long-term reliability under thermal cycling
Low clamping ratio (VC/VBR ≈ 1.45)Minimizes overvoltage overshoot during fast transients, protecting sensitive gate oxides
Halogen-free & RoHS-compliantMeets automotive material compliance standards (e.g., VW 80101, GMW3172)

Applications

Automotive Power Rail Protection Industrial Sensor Interface Protection

Use Scenario: Suppressing load-dump transients (ISO 7637-2 Pulse 5a) on 12 V battery-fed microcontroller power inputs in engine control units.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between VIN and GND to clamp surges above 70.1 V before they reach LDO input.

Use Value: Limits peak voltage to 113 V during 600 W pulses, preventing damage to 16 V-rated input stages of automotive MCUs.

Use Scenario: Protecting analog front-end inputs of industrial current sensors exposed to relay-coil flyback in motor drives.

IC Role / Device Role / Timing Role: Fast-response clamping device shunting inductive kickback from 24 V control lines to ground.

Use Value: Responds in <1 ps to limit transient amplitude to safe levels for ±10 V input amplifiers with 100 kΩ impedance.

Telecom DC Power Input Protection Consumer Device USB Port ESD Guard

Use Scenario: Safeguarding PoE-powered switch port controllers against lightning-induced surges on 48 V DC input lines.

IC Role / Device Role / Timing Role: Primary overvoltage clamp upstream of DC-DC converter, coordinated with MOV and fuse.

Use Value: Clamps 10/1000 µs surges to ≤113 V while maintaining <1 µA leakage at 70.1 V for low standby loss.

Use Scenario: Secondary-level ESD protection on VBUS line of USB-C ports in portable medical monitors.

IC Role / Device Role / Timing Role: Standoff-rated TVS absorbing IEC 61000-4-2 ±15 kV contact discharge energy before reaching USB controller.

Use Value: Delivers 600 W pulse handling with 113 V clamping to prevent latch-up in USB PHY ICs rated for 20 V absolute max.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMAJ85A-E3/5BSame SMB package, VBR = 85–94.4 V, VC = 125 V @ 4.8 A, non-AEC-Q101, RoHS-compliant only (E3)Lacks automotive qualification; suitable for commercial/industrial use where AEC-Q101 not mandatedSelect when cost sensitivity outweighs automotive certification requirement
1.5SMC82ASame VBR/VC specs but in larger SMC (DO-214AB) package; RθJA = 40 °C/W; no AEC-Q101 optionHigher thermal dissipation margin but requires 30 % larger PCB area; not automotive-qualifiedChoose for high-reliability industrial designs needing lower junction temperature rise

Compared with SMAJ85A-E3/5B and 1.5SMC82A, P6SMB82AHM3_B/H uniquely combines AEC-Q101 qualification, halogen-free construction, and SMB footprint - making it the only drop-in solution for space-constrained automotive modules requiring full compliance traceability.

Availability

P6SMB82AHM3_B/H is available at Aetrix Electronics and suitable for automotive electronic control units, industrial sensor interfaces, telecom DC power inputs, and consumer USB power protection requiring stable component supply across production lifecycles.

Supply support for P6SMB82AHM3_B/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability and automotive-grade validation.

The P6SMB Series targets high-energy transient suppression in space-constrained applications, with design focus on AEC-Q101-compliant TVS diodes for automotive power systems and industrial automation interfaces.

FAQ

What is the clamping voltage of P6SMB82AHM3_B/H under a 10/1000 µs surge?

The P6SMB82AHM3_B/H clamps to a maximum of 113 V at 5.3 A peak pulse current under a 10/1000 µs waveform. This value is measured per standard test conditions (TA = 25 °C, mounted on 0.2" × 0.2" copper pads) and defines the upper voltage limit imposed on protected circuits during transient events. The clamping performance ensures compatibility with 12 V and 24 V automotive systems where downstream ICs require strict overvoltage limits.

Is P6SMB82AHM3_B/H qualified for automotive applications?

Yes, P6SMB82AHM3_B/H is AEC-Q101 qualified, as confirmed by the HM3_B suffix in its ordering code. This indicates full compliance with the AEC-Q101 stress test standard for discrete semiconductors, including high-temperature operating life, temperature cycling, and unbiased highly accelerated stress testing. The qualification applies specifically to this exact part number and supports deployment in engine control units, body electronics, and ADAS power domains.

What does the "HM3_B/H" suffix mean in P6SMB82AHM3_B/H?

The "HM3" denotes halogen-free, RoHS-compliant construction; "B" indicates AEC-Q101 qualification for the P6SMB6.8A–P6SMB220A voltage range; and "H" specifies 7" diameter plastic tape-and-reel packaging (750 units per reel). Together, P6SMB82AHM3_B/H identifies a fully automotive-qualified, environmentally compliant, surface-mount TVS diode supplied in standard production packaging for automated assembly.

How does P6SMB82AHM3_B/H compare to bidirectional variants like P6SMB82CA?

P6SMB82AHM3_B/H is unidirectional, with polarity marked by a cathode band, and blocks reverse current until breakdown occurs - ideal for DC rail protection. In contrast, P6SMB82CA is bidirectional, symmetric in both directions, and used in AC-coupled or differential signal lines. They share identical VBR, VC, and PPPM, but P6SMB82AHM3_B/H cannot replace P6SMB82CA in AC applications due to polarity dependence, and vice versa.

What is the maximum steady-state power dissipation of P6SMB82AHM3_B/H?

The P6SMB82AHM3_B/H has a maximum steady-state power dissipation (PD) of 5.0 W at TA = 50 °C on an infinite heatsink. Under typical PCB conditions (0.2" × 0.2" copper pads), derating applies per Figure 2 in the datasheet - e.g., ~3.5 W at TA = 70 °C. This rating governs continuous reverse leakage power, not transient surge capability, and must be considered alongside thermal layout for sustained operation.

P6SMB82AHM3_B/H Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AA, SMB
Series:
P6SMB, TransZorb®
Packaging:
Bulk
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
70.1V
Voltage - Breakdown (Min):
77.9V
Voltage - Clamping (Max) @ Ipp:
113V
Current - Peak Pulse (10/1000µs):
5.3A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
Telecom
Capacitance @ Frequency:
-
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMB)

P6SMB82AHM3_B/H FAQ

1.How can I place an order for P6SMB82AHM3_B/H through Aetrix?

Please submit a Request for Quotation (RFQ) for P6SMB82AHM3_B/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for P6SMB82AHM3_B/H reliable?

The price and inventory of P6SMB82AHM3_B/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P6SMB82AHM3_B/H is usually 5 days.

3.What payment methods are accepted for P6SMB82AHM3_B/H?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P6SMB82AHM3_B/H transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for P6SMB82AHM3_B/H?

P6SMB82AHM3_B/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your P6SMB82AHM3_B/H order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for P6SMB82AHM3_B/H?

For technical support, including P6SMB82AHM3_B/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P6SMB82AHM3_B/H requirements.

6.How does Aetrix verify that P6SMB82AHM3_B/H is sourced from the original manufacturer or authorized distributors?

All P6SMB82AHM3_B/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P6SMB82AHM3_B/H meets industry standards.

7.What is the process for return or replacement of P6SMB82AHM3_B/H?

All P6SMB82AHM3_B/H units undergo pre-shipment inspection (PSI). If there is an issue with P6SMB82AHM3_B/H, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The P6SMB82AHM3_B/H part is unused and in its original packaging.

Return procedure for P6SMB82AHM3_B/H:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

P6SMB82AHM3_B/H Tags

  • P6SMB82AHM3_B/H
  • P6SMB82AHM3_B/H PDF
  • P6SMB82AHM3_B/H Datasheet
  • P6SMB82AHM3_B/H Specifications
  • P6SMB82AHM3_B/H Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division P6SMB82AHM3_B/H
  • Buy P6SMB82AHM3_B/H
  • P6SMB82AHM3_B/H Price
  • P6SMB82AHM3_B/H Distributor
  • P6SMB82AHM3_B/H Supplier
  • P6SMB82AHM3_B/H Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER