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Vishay General Semiconductor - Diodes Division P6SMB82A-M3/52

Part No.:
P6SMB82A-M3/52
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixP6SMB82A-M3/52.pdf
Description:
TVS DIODE 70.1VWM 113VC DO214AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,859

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Product details

Overview

P6SMB82A-M3/52 from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in the SMB (DO-214AA) package, designed for clamping voltage transients on power and signal lines. It features a 70.1 V stand-off voltage (VWM), 77.9–86.1 V breakdown voltage (VBR) at 1 mA, 113 V maximum clamping voltage (VC) at 5.3 A peak pulse current, and 600 W peak pulse power capability with a 10/1000 µs waveform - suitable for protecting MOSFETs, ICs, and sensor interfaces in industrial power supplies.

For engineers reviewing the P6SMB82A-M3/52 datasheet, P6SMB82A-M3/52 pinout, P6SMB82A-M3/52 application, or P6SMB82A-M3/52 equivalent, this device delivers verified transient suppression performance in compact SMB packaging, with halogen-free RoHS compliance, MSL Level 1 rating, and AEC-Q101 qualification available in related variants - critical for automotive-grade ESD and surge protection design validation.

Technical Context

This unidirectional TVS diode operates as a voltage-clamping protector: when reverse voltage exceeds VWM = 70.1 V, it avalanches to limit transient energy, clamping to ≤113 V at 5.3 A (10/1000 µs). Its glass-passivated junction ensures stable breakdown behavior and low leakage (<1 µA at VWM), while the SMB package supports automated SMT placement and meets UL 94 V-0 flammability.

Thermal resistance is RθJA = 100 °C/W (junction-to-ambient, on 0.2" × 0.2" copper pads), enabling reliable operation up to TJ = 150 °C. The device sustains non-repetitive 100 A forward surge (8.3 ms half-sine) and exhibits a +0.105 %/°C temperature coefficient of VBR, ensuring predictable voltage shift across temperature.

Key Specifications

Parameter Value and Actual Design Meaning
VWM (Stand-off) 70.1 V - Maximum continuous reverse operating voltage before clamping begins; defines safe working margin below breakdown.
VBR (Breakdown) 77.9–86.1 V at 1 mA - Confirmed avalanche onset range; ensures tight tolerance for precise overvoltage thresholding.
VC (Clamping) 113 V at IPPM = 5.3 A (10/1000 µs) - Peak voltage seen by protected circuit during worst-case surge; determines downstream component stress.
PPPM 600 W - Peak pulse power handling capacity; validates robustness against lightning-induced surges and inductive switching spikes.
IFSM 100 A (8.3 ms half-sine) - Forward surge rating; supports protection of rectifier stages and DC bus inputs under fault conditions.
TJ max. +150 °C - Maximum junction temperature; enables use in high-ambient environments like motor drives and outdoor telecom equipment.
Package SMB (DO-214AA) - Standardized 2-pin surface-mount outline with cathode band marking; compatible with IPC-7351B footprint and reflow profiles.

Pinout & Package

Package: SMB (DO-214AA), surface-mount, matte tin-plated leads, MSL Level 1 (260 °C peak reflow), UL 94 V-0 molding compound. Cathode indicated by band on body; anode is unmarked end.

Pin/Terminal Circuit Role Design Meaning
Anode Forward current entry / Reverse voltage reference Connected to lower-potential side (e.g., ground or return path); defines polarity-sensitive clamping direction.
Cathode Reverse voltage input / Clamping output Connected to protected line (e.g., 48 V rail or sensor input); conducts avalanche current to anode during overvoltage events.

Key Features

Feature Design Value
600 W peak pulse power (10/1000 µs) Validates immunity to IEC 61000-4-5 Level 4 surges (4 kV line-earth) without degradation in standard PCB layouts.
Glass passivated chip junction Ensures long-term stability of VBR and low leakage (<1 µA) across humidity and thermal cycling per JESD22-A101.
Halogen-free, RoHS-compliant (M3 suffix) Meets IPC-1752A material declaration requirements and EU Directive 2015/863 for sustainable electronics manufacturing.
Low incremental surge resistance Minimizes VC overshoot during fast-rising transients (e.g., ESD >15 kV), improving protection margin for 3.3 V/5 V logic interfaces.
Fast response time (<1 ps) Activates before most semiconductor damage thresholds are exceeded - critical for safeguarding high-speed ADCs and microcontroller I/O pins.

Applications

Industrial Motor Drives Automotive Body Control Modules

Use Scenario: Protection of gate drivers and DC-link sensing circuits against inductive kickback from BLDC motor commutation.

IC Role / Device Role: Unidirectional clamping element placed across MOSFET source-drain or op-amp supply rails.

Use Value: Limits transient voltage to ≤113 V, preventing gate oxide rupture in 100 V-rated Si MOSFETs and maintaining analog signal integrity in current-sense amplifiers.

Use Scenario: Surge suppression on LIN bus lines and power inputs of door module ECUs exposed to load dump and jump-start conditions.

IC Role / Device Role: Primary TVS on 12 V supply rail and bidirectional data line (with CA variant), here used unidirectionally on VBAT-to-ground path.

Use Value: Withstands 600 W pulses and 100 A surge, meeting ISO 7637-2 Pulse 5a requirements while maintaining <1 µA leakage at 70.1 V standby.

Telecom Power Feeds Consumer Sensor Interfaces

Use Scenario: Input-stage protection for PoE-powered remote radios and base station backhaul units subjected to lightning-induced surges on 48 V DC feeds.

IC Role / Device Role: First-line transient suppressor upstream of DC/DC converters and hot-swap controllers.

Use Value: Clamps 10/1000 µs surges to 113 V with 5.3 A peak current, preserving converter FETs and enabling compliance with ITU-T K.20/21 immunity standards.

Use Scenario: ESD and EFT protection for I²C/SPI lines connecting MEMS accelerometers and environmental sensors to MCU host in smart home hubs.

IC Role / Device Role: Low-capacitance (typ. 100 pF at 0 V) unidirectional TVS placed between signal line and ground.

Use Value: Sub-113 V clamping prevents latch-up in 3.3 V I/O cells; glass passivation ensures <1 µA leakage preserves battery life in always-on sensor nodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMAJ85A-E3/5T Higher VWM = 72.2 V, higher VC = 121 V at 4.9 A; same SMB package, RoHS/E3 suffix. Marginally higher clamping voltage reduces protection margin for 100 V-rated components; better suited for 85 V nominal systems. Select when system nominal voltage is ≥85 V and tighter VBR tolerance (±5 %) is required over P6SMB82A-M3/52's ±5.2 %.
1.5SMC82A Same VWM/VBR/VC specs but in larger SMC (DO-214AB) package; 1.5 kW PPPM, higher IPPM. Requires larger PCB area and different thermal pad layout; preferred for high-energy surge zones like AC/DC front ends. Choose only if 600 W is insufficient and board space allows SMC footprint; not drop-in due to mechanical incompatibility.

Compared with SMAJ85A-E3/5T and 1.5SMC82A, the P6SMB82A-M3/52 offers optimal balance of clamping performance (113 V), compact SMB footprint, and halogen-free compliance - making it ideal for space-constrained, high-volume industrial and automotive modules where thermal management and material sustainability are prioritized.

Availability

P6SMB82A-M3/52 is available at Aetrix Electronics and suitable for industrial motor drives, automotive body control modules, and telecom power feeds requiring stable component supply, halogen-free compliance, and AEC-Q101-qualified alternatives in the same family.

Supply support for P6SMB82A-M3/52 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.

The P6SMB Series is engineered for robust transient suppression in harsh environments - targeting automotive, industrial, and telecom applications where high pulse power, stable clamping, and long-term parametric consistency are mandatory.

FAQ

What is the maximum clamping voltage of the P6SMB82A-M3/52 under a 10/1000 µs surge?

The P6SMB82A-M3/52 has a maximum clamping voltage (VC) of 113 V at 5.3 A peak pulse current with a 10/1000 µs waveform. This value is measured per Figure 1 in Vishay document 88370 and defines the upper voltage limit imposed on protected circuitry during standardized surge events - critical for ensuring downstream component survival in IEC 61000-4-5 testing scenarios.

Is the P6SMB82A-M3/52 halogen-free and RoHS-compliant?

Yes, the P6SMB82A-M3/52 carries the "M3" suffix, indicating it is halogen-free and fully RoHS-compliant per EU Directive 2015/863. Its molding compound meets UL 94 V-0 flammability rating, and terminals are matte tin-plated per J-STD-002, satisfying both environmental and solderability requirements for modern electronics assembly - confirmed in Vishay's ordering information table on page 3 of document 88370.

Does the P6SMB82A-M3/52 have AEC-Q101 qualification?

The P6SMB82A-M3/52 itself is not AEC-Q101 qualified; however, the P6SMB82AHM3_B/H variant (with "HM3_B" suffix) is explicitly listed as AEC-Q101 qualified in the same datasheet. For automotive applications requiring qualification, engineers must specify the HM3_B or HM3_I version - the P6SMB82A-M3/52 remains commercial-grade with identical electrical specs but lacks formal automotive stress-test certification.

What is the thermal resistance of the P6SMB82A-M3/52, and how does it affect PCB layout?

The P6SMB82A-M3/52 has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. This value assumes minimum recommended pad layout per Figure 5; reducing pad size increases thermal impedance and risks exceeding TJ = 150 °C during repetitive surges - so designers must maintain specified copper area and consider thermal vias for high-duty-cycle applications.

How does the temperature coefficient of VBR impact the P6SMB82A-M3/52 in wide-temperature applications?

The P6SMB82A-M3/52 has a VBR temperature coefficient of +0.105 %/°C, meaning its breakdown voltage increases by ~0.08 V/°C above 25 °C. At 125 °C ambient, VBR rises to approximately 84.5 V - still within the 77.9–86.1 V spec range - ensuring consistent clamping behavior across the full -65 °C to +150 °C operating junction range without false triggering or loss of protection margin.

P6SMB82A-M3/52 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AA, SMB
Series:
P6SMB, TransZorb®
Packaging:
Tape & Box (TB)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
70.1V
Voltage - Breakdown (Min):
77.9V
Voltage - Clamping (Max) @ Ipp:
113V
Current - Peak Pulse (10/1000µs):
5.3A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
-
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMBJ)

P6SMB82A-M3/52 FAQ

1.How can I place an order for P6SMB82A-M3/52 through Aetrix?

Please submit a Request for Quotation (RFQ) for P6SMB82A-M3/52 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for P6SMB82A-M3/52 reliable?

The price and inventory of P6SMB82A-M3/52 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P6SMB82A-M3/52 is usually 5 days.

3.What payment methods are accepted for P6SMB82A-M3/52?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P6SMB82A-M3/52 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for P6SMB82A-M3/52?

P6SMB82A-M3/52 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your P6SMB82A-M3/52 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for P6SMB82A-M3/52?

For technical support, including P6SMB82A-M3/52 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P6SMB82A-M3/52 requirements.

6.How does Aetrix verify that P6SMB82A-M3/52 is sourced from the original manufacturer or authorized distributors?

All P6SMB82A-M3/52 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P6SMB82A-M3/52 meets industry standards.

7.What is the process for return or replacement of P6SMB82A-M3/52?

All P6SMB82A-M3/52 units undergo pre-shipment inspection (PSI). If there is an issue with P6SMB82A-M3/52, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The P6SMB82A-M3/52 part is unused and in its original packaging.

Return procedure for P6SMB82A-M3/52:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

P6SMB82A-M3/52 Tags

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