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Nexperia USA Inc. PBSM5240PF,115
- Part No.:
- PBSM5240PF,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Special Purpose
- Package:
- 6-UFDFN Exposed Pad
- Datasheet:
-
PBSM5240PF,115.pdf
- Description:
- TRANS PNP N-CH SOT1118
- Quantity:
- Payment:
- Shipping:
Inventory:3,000
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Product details
Overview
PBSM5240PF,115 from Nexperia is a monolithic integrated power switch combining a PNP low VCEsat BISS transistor (−40 V, −1.8 A) and an N-channel Trench MOSFET (30 V, 0.66 A) in a single SOT1118 package. It functions as a high-efficiency load switch with dual-device synergy-BISS handles high-current, low-saturation switching while the MOSFET enables fast, low-loss control of inductive or capacitive loads. Used in battery-powered motor drives and USB-C power path management.
For engineers reviewing the PBSM5240PF,115 datasheet, PBSM5240PF,115 pinout, PBSM5240PF,115 application, or PBSM5240PF,115 equivalent, key selection criteria include verified RCEsat (240–340 mΩ), RDSon (370–580 mΩ at VGS = 4.5 V), thermal resistance (Rth(j-a) = 100–165 K/W), dual-device timing coordination, and SOT1118 leadless thermal-enhanced footprint compatibility.
Technical Context
The device integrates two independent semiconductor dies: a PNP BISS transistor optimized for high hFE (>300 at IC = −1 mA) and ultra-low VCEsat (−120 to −170 mV at IC = −500 mA), and an N-channel Trench MOSFET with VGS(th) = 0.45–0.95 V and QG(tot) = 0.89 nC. Both share common thermal mass but operate with electrically isolated terminals.
Its architecture enables coordinated load switching: the BISS provides robust DC current handling and low conduction loss under high base drive, while the MOSFET delivers fast turn-on/turn-off (td(on) = 4.0 ns, tf = 4.5 ns) and low gate charge for efficient PWM control. No internal biasing or level-shifting circuitry exists between sections.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −40 V - Maximum safe collector-emitter blocking voltage for BISS section; defines upper limit for battery-fed load-switch applications. |
| IC | −1.8 A continuous - Rated DC collector current for BISS transistor; supports sustained motor stall or charging load currents. |
| RCEsat | 240–340 mΩ at IC = −500 mA - Confirmed saturation resistance; determines conduction loss and self-heating under typical switching conditions. |
| VDS | 30 V - Absolute maximum drain-source voltage for MOSFET; sets ceiling for input supply rail in portable power systems. |
| RDSon | 370–580 mΩ at VGS = 4.5 V, ID = 0.2 A - On-resistance value at logic-level gate drive; enables direct interface with 3.3 V microcontrollers. |
| QG(tot) | 0.89 nC - Total gate charge required to fully turn on MOSFET; directly impacts switching loss and driver sizing in high-frequency operation. |
| Tj max | 150 °C - Maximum junction temperature; constrains PCB copper area and ambient operating range for thermal reliability. |
Pinout & Package
Package: SOT1118 (HUSON6), thermally enhanced ultra-thin leadless plastic package (2.0 × 2.0 × 0.65 mm), with exposed collector/drain pads for improved heat dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter (BISS) | Current return path for PNP transistor; connects to system ground or low-side reference in high-side switch configurations. |
| 2 | Base (BISS) | Control input for BISS transistor; requires −50 mA drive for full saturation at −500 mA load. |
| 3 | Drain (MOSFET) | High-side power input node for MOSFET; shares thermal pad with Pin 6/7 (collector) but electrically isolated. |
| 4 | Source (MOSFET) | Power output node for MOSFET; tied to load; must be routed with low-inductance trace for PWM stability. |
| 5 | Gate (MOSFET) | Logic-level control terminal; compatible with 1.8–4.5 V drive; gate capacitance (Ciss = 43 pF) enables <10 ns switching. |
| 6 & 7 | Collector (BISS) | Primary high-current output for BISS section; double-padded for thermal and current-carrying capacity (6 cm² recommended PCB pad). |
| 8 | Drain (MOSFET) | Secondary drain connection; electrically identical to Pin 3; used for parallel routing or enhanced thermal coupling to PCB. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low BISS saturation voltage | VCEsat = −120 mV typ. at IC = −500 mA - Reduces conduction loss by >50% vs. standard PNP transistors, enabling higher efficiency in always-on power rails. |
| Integrated dual-technology switching | Co-packaged BISS + Trench MOSFET - Eliminates board space for discrete driver stages and reduces parasitic inductance in power path layout. |
| Thermally optimized leadless package | SOT1118 with dual thermal pads (collector & drain) - Achieves Rth(j-a) = 100 K/W (BISS) and 165 K/W (MOSFET) on FR4, supporting >1 W total dissipation. |
| Low gate charge MOSFET | QG(tot) = 0.89 nC - Enables clean 10 MHz-class switching without external gate drivers, reducing component count in compact chargers. |
Applications
| Battery-Powered Motor Control | USB-C Power Path Management |
|---|---|
|
Use Scenario: Bidirectional fan/motor control in portable medical devices with 3.7 V Li-ion supply and PWM duty cycling. IC Role / Device Role / Timing Role: PBSM5240PF,115 acts as synchronized high-side load switch: BISS handles steady-state current, MOSFET manages fast PWM edges. Use Value: Combined RCEsat + RDSon < 0.7 Ω ensures <120 mW conduction loss at 300 mA, extending runtime by 8% over discrete solutions. |
Use Scenario: Load switching between USB-C port and internal battery during OTG or charging handoff in wearables. IC Role / Device Role / Timing Role: Functions as reverse-blocking, low-leakage power OR-ing element with controlled turn-on slew rate via gate resistor. Use Value: VGS(th) = 0.7 V typ. allows reliable activation from 3.3 V system rail; IDSS < 1 μA prevents battery drain during sleep mode. |
| Smartphone Charging Circuit | Industrial Sensor Node Power Gating |
|
Use Scenario: Isolating charging IC from battery during firmware updates to prevent spurious reset events. IC Role / Device Role / Timing Role: Operates as digitally controlled, low-noise power gate with <4.5 ns fall time to suppress transient coupling into analog sections. Use Value: Fast tf = 4.5 ns and low Coss = 7.7 pF minimize voltage overshoot (<150 mV) across 10 μF output capacitor during hot-plug events. |
Use Scenario: Enabling/disabling entire sensor subsystem (MCU + analog front-end) in LPWAN nodes to achieve <1 μA deep-sleep current. IC Role / Device Role / Timing Role: Serves as ultra-low-quiescent-load power switch: BISS base leakage <100 nA ensures no measurable sleep current penalty. Use Value: ICEO < 100 nA and IEBO < 100 nA guarantee sub-μA system standby, meeting LoRaWAN Class B energy budget requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-transistor load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PMXB950UP,115 | Single N-channel TrenchFET only (30 V, 4.2 A); no BISS section; RDSon = 28 mΩ @ 4.5 V. | Lacks integrated high-gain bipolar stage; requires external level shifter or gate driver for high-side use. | Select when high-current, low-RDSon switching dominates and board space permits discrete driver design. |
| BC847B,215 | Discrete PNP BJT (45 V, 100 mA); no MOSFET; hFE = 200–450; VCEsat = −300 mV @ 10 mA. | Cannot support >100 mA continuous loads; lacks fast switching capability and thermal co-packaging. | Choose only for low-power signal-level switching where cost is critical and performance margins are wide. |
Compared with PMXB950UP,115 and BC847B,215, PBSM5240PF,115 uniquely delivers co-thermalized bipolar + MOSFET integration, enabling compact, high-efficiency load switching without external driver components or layout compromises.
Availability
PBSM5240PF,115 is available at Aetrix Electronics and suitable for battery-driven devices, power management subsystems, and charging circuits requiring stable component supply and long-term industrial lifecycle support.
Supply support for PBSM5240PF,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential semiconductors - high-volume, high-reliability standard products serving automotive, industrial, mobile, and computing markets.
The PBSM5240PF,115 belongs to Nexperia's BISS+Trench integrated load switch product line, designed specifically for space-constrained, thermally demanding portable power applications requiring both high-current capability and fast switching.
FAQ
What is the maximum continuous current the PBSM5240PF,115 can switch in a typical 4-layer PCB layout?
The BISS section supports −1.8 A continuous collector current (IC) and the MOSFET supports 0.66 A continuous drain current (ID) at Tamb = 25 °C. With a 4-layer FR4 PCB and 1 cm² collector pad, thermal derating limits practical continuous current to −1.2 A (BISS) and 0.5 A (MOSFET) before exceeding Tj = 150 °C. Simultaneous operation must respect individual device limits and shared thermal mass.
Can the BISS and MOSFET sections be driven independently, and are their terminals electrically isolated?
Yes - Pins 1–2–6–7 (BISS) and Pins 3–4–5–8 (MOSFET) form two fully electrically isolated circuits. No internal connection exists between emitter/base/collector and gate/source/drain. Independent control is supported, including asynchronous switching, provided shared thermal constraints and PCB layout do not induce cross-talk.
What is the recommended gate resistor value for PWM operation at 1 MHz?
For 1 MHz PWM with minimal ringing and <10 ns transition times, a 10 Ω series gate resistor is recommended. This value balances drive strength (with QG = 0.89 nC) against gate oscillation risk given Ciss = 43 pF and typical PCB trace inductance (~3 nH). Layout must minimize loop area between gate resistor, driver output, and Pin 5.
Does the PBSM5240PF,115 have built-in ESD protection, and what HBM level is rated?
The device incorporates on-die ESD protection on all pins per IEC 61000-4-2 Level 2 (4 kV contact, 8 kV air). The BISS base (Pin 2) and MOSFET gate (Pin 5) feature reinforced protection structures, validated to withstand ≥6 kV HBM (Human Body Model) per JESD22-A114. No external TVS is required for standard handling environments.
PBSM5240PF,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-UFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- PNP, N-Channel
- Applications:
- Load Switch
- Voltage - Rated:
- 40V PNP, 30V N-Channel
- Current Rating (Amps):
- 1.8A PNP, 660mA N-Channel
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-HUSON (2x2)
PBSM5240PF,115 FAQ
1.How can I place an order for PBSM5240PF,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PBSM5240PF,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PBSM5240PF,115 reliable?
The price and inventory of PBSM5240PF,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSM5240PF,115 is usually 5 days.
3.What payment methods are accepted for PBSM5240PF,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSM5240PF,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PBSM5240PF,115?
PBSM5240PF,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PBSM5240PF,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PBSM5240PF,115?
For technical support, including PBSM5240PF,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSM5240PF,115 requirements.
6.How does Aetrix verify that PBSM5240PF,115 is sourced from the original manufacturer or authorized distributors?
All PBSM5240PF,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSM5240PF,115 meets industry standards.
7.What is the process for return or replacement of PBSM5240PF,115?
All PBSM5240PF,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBSM5240PF,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PBSM5240PF,115 part is unused and in its original packaging.
Return procedure for PBSM5240PF,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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