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Nexperia USA Inc. PBSS2515YPN,115
- Part No.:
- PBSS2515YPN,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
PBSS2515YPN,115.pdf
- Description:
- TRANS NPN/PNP 15V 500MA 6-TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:3,685
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Product details
Overview
PBSS2515YPN from Nexperia is a dual NPN/PNP low VCE(sat) transistor pair in a single SOT363 (TSSOP6) package, designed for compact high-efficiency switching in space-constrained portable electronics. It delivers 15 V VCEO, ≤250 mV VCE(sat) at 500 mA, and 300–500 mΩ RCE(sat) per transistor, enabling direct replacement of two discrete SC-70 transistors in LCD backlighting and battery supply line switching.
For engineers reviewing the PBSS2515YPN datasheet, PBSS2515YPN pinout, PBSS2515YPN application, or PBSS2515YPN equivalent, key selection criteria include verified dual-transistor integration, sub-250 mV saturation voltage under 500 mA load, thermal resistance of 416 K/W on FR4, and compatibility with standard reflow soldering footprints for TSSOP6.
Technical Context
This device integrates complementary NPN and PNP transistors sharing a common SOT363 footprint-TR1 (NPN) and TR2 (PNP)-each rated for 15 V VCEO, ±500 mA continuous collector current, and ±1 A peak pulse current. Both exhibit matched DC current gain (hFE ≥90 at IC = ±500 mA) and symmetric saturation characteristics under pulsed conditions (tp ≤ 300 µs, duty ≤ 0.02).
Thermal performance is defined for FR4 PCB mounting with single-sided copper: total power dissipation is 300 mW per device at Tamb ≤ 25 °C, with junction temperature limited to 150 °C. Transition frequency fT reaches 420 MHz (NPN) and 280 MHz (PNP), supporting low-frequency switching (<1 MHz) with fast turn-on/turn-off response.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 15 V - Maximum safe collector-emitter voltage for both NPN and PNP transistors under open-base condition. |
| VCE(sat) | ≤250 mV - Verified saturation voltage at IC = ±500 mA, IB = ±50 mA, enabling <0.125 W conduction loss per transistor. |
| RCE(sat) | 300–500 mΩ - Equivalent on-resistance range confirming low-loss switching behavior in linear region applications. |
| IC (continuous) | ±500 mA - Continuous collector current rating per transistor, validated for ambient temperatures up to 150 °C. |
| Ptot | 300 mW - Total device power dissipation limit on standard FR4 PCB, defining thermal derating envelope. |
| fT | 420 MHz (NPN), 280 MHz (PNP) - Transition frequencies confirming suitability for fast-switching control loops below 1 MHz. |
Pinout & Package
SOT363 (TSSOP6) plastic surface-mount package: 6-pin, 0.65 mm pitch, 2.1 mm × 1.25 mm × 0.95 mm body size, optimized for automated placement and reflow soldering on dense PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter of TR1 (NPN) | Low-impedance output node for NPN switch; connects to load ground reference in high-side driver configurations. |
| 2 | Base of TR1 (NPN) | Control input for NPN transistor; requires ~50 mA drive for full saturation at 500 mA load. |
| 3 | Collector of TR2 (PNP) | High-side power input node for PNP transistor; ties to positive rail in supply-line switching topologies. |
| 4 | Emitter of TR2 (PNP) | Output node for PNP switch; used as active-low driver or reverse-polarity protection path. |
| 5 | Base of TR2 (PNP) | Inverted control input for PNP transistor; driven low via MCU GPIO or level-shifter for activation. |
| 6 | Collector of TR1 (NPN) | Primary load connection point for NPN transistor; supports sink-current operation up to 500 mA. |
Key Features
| Feature | Design Value |
|---|---|
| Dual complementary topology | Single SOT363 package integrates matched NPN and PNP transistors, eliminating inter-device layout mismatch and reducing board area by >40% vs. two SC-70 devices. |
| Ultra-low VCE(sat) | ≤250 mV at 500 mA ensures <125 mW conduction loss per transistor, critical for battery-powered efficiency in mobile phones and handheld devices. |
| Thermal robustness | Rth(j-a) = 416 K/W on standard FR4 enables stable operation at 150 °C junction temperature without forced cooling. |
| Process-matched parameters | Identical RCE(sat) (300–500 mΩ) and hFE (≥90) for both transistors simplify bias network design in push-pull or H-bridge driver stages. |
Applications
| Mobile Phone Power Management | LCD Backlight Dimming Control |
|---|---|
|
Use Scenario: Switching battery voltage to enable/disable subsystems (e.g., camera module, audio codec) during sleep mode. IC Role / Device Role / Timing Role: Dual-transistor pair acts as bidirectional load switch-NPN sinks current for low-side enable, PNP sources current for high-side rail control. Use Value: 250 mV VCE(sat) minimizes voltage drop and power loss, extending battery runtime by reducing quiescent dissipation in always-on paths. |
Use Scenario: PWM-controlled current regulation for white LED strings in smartphone displays. IC Role / Device Role / Timing Role: NPN transistor operates as constant-current sink modulated at 1–10 kHz; PNP provides auxiliary bias for feedback circuitry. Use Value: Matched hFE and RCE(sat) ensure consistent LED brightness across dimming levels without calibration drift. |
| Handheld Video Camera Supply Switching | USB Peripheral Muting Circuit |
|
Use Scenario: Isolating main Li-ion battery from image sensor and video processor during standby to prevent leakage. IC Role / Device Role / Timing Role: PNP transistor functions as high-side switch controlling 3.3 V rail; NPN handles logic-level translation from microcontroller. Use Value: 15 V VCEO headroom accommodates battery voltage spikes up to 4.4 V, ensuring reliable cutoff without breakdown. |
Use Scenario: Disabling analog audio paths (e.g., microphone input, speaker output) when USB host enters suspend state. IC Role / Device Role / Timing Role: Complementary pair forms an active muting gate-NPN grounds signal path, PNP disconnects bias supply. Use Value: Sub-250 mV VCE(sat) prevents audible pop/click artifacts by eliminating residual DC offset during mute transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual low-VCE(sat) transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004KQW-7 | Single N-channel MOSFET pair (not complementary); 20 V VDS, 28 mΩ RDS(on); no PNP equivalent. | Only suitable for low-side switching; cannot replace PNP function in high-side or push-pull roles. | Select only when topology requires dual N-channel switches with ultra-low on-resistance and gate-drive compatibility. |
| NSVD2003MUTAG | Complementary NPN/PNP pair in SOT-563; 20 V VCEO, 350 mV VCE(sat) at 500 mA; larger 2.2 mm × 1.35 mm footprint. | Same functional role but occupies 35% more PCB area; higher thermal resistance (450 K/W) limits power handling. | Choose if board layout allows larger package and higher VCEO margin is prioritized over space and thermal efficiency. |
Compared with DMN2004KQW-7 and NSVD2003MUTAG, PBSS2515YPN uniquely balances complementary bipolar functionality, minimal 2.1 mm × 1.25 mm footprint, and lowest verified VCE(sat) (≤250 mV) for battery-constrained dual-rail switching.
Availability
PBSS2515YPN is available at Aetrix Electronics and suitable for mobile phone power management, LCD backlight dimming control, and handheld video camera supply switching requiring stable component supply and tight thermal budget adherence.
Supply support for PBSS2515YPN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive, industrial, and consumer power management solutions.
PBSS2515YPN belongs to Nexperia's low VCE(sat) transistor family, engineered specifically for space- and efficiency-critical portable electronics where minimizing conduction loss and PCB real estate is essential.
FAQ
What is the maximum continuous collector current per transistor in PBSS2515YPN?
The maximum continuous collector current is ±500 mA per transistor, specified at Tamb ≤ 25 °C with derating above that temperature. This rating is validated under pulsed test conditions (tp ≤ 300 µs, δ ≤ 0.02) and confirmed by thermal resistance data (Rth(j-a) = 416 K/W on FR4).
Can PBSS2515YPN be used in automotive applications?
No-PBSS2515YPN is explicitly marked as non-automotive qualified in its revision history (v.3, October 2022). It lacks AEC-Q101 qualification, automotive-grade testing, and extended temperature validation beyond −65 °C to +150 °C ambient. Automotive designs require Nexperia's -Q series variants.
How does the pin configuration support complementary switching topologies?
Pins 1–2–6 form the NPN transistor (E1–B1–C1), while pins 3–4–5 form the PNP (C2–E2–B2), enabling direct implementation of push-pull, H-bridge, or high-/low-side switch pairs without external routing. The interleaved layout minimizes parasitic inductance between complementary paths.
Is the 250 mV VCE(sat) value guaranteed across temperature and process variation?
Yes-the datasheet specifies ≤250 mV as the maximum VCE(sat) under pulsed conditions (IC = ±500 mA, IB = ±50 mA, tp ≤ 300 µs, δ ≤ 0.02, Tamb = 25 °C), representing worst-case production screening across temperature and process corners.
PBSS2515YPN,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 1 NPN, 1 PNP
- Current - Collector (Ic) (Max):
- 500mA
- Voltage - Collector Emitter Breakdown (Max):
- 15V
- Vce Saturation (Max) @ Ib, Ic:
- 250mV @ 50mA, 500mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 150 @ 100mA, 2V
- Power - Max:
- 300mW
- Frequency - Transition:
- 420MHz, 280MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
PBSS2515YPN,115 FAQ
1.How can I place an order for PBSS2515YPN,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PBSS2515YPN,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PBSS2515YPN,115 reliable?
The price and inventory of PBSS2515YPN,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS2515YPN,115 is usually 5 days.
3.What payment methods are accepted for PBSS2515YPN,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS2515YPN,115 transactions.
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4.How is shipping managed for PBSS2515YPN,115?
PBSS2515YPN,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PBSS2515YPN,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PBSS2515YPN,115?
For technical support, including PBSS2515YPN,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS2515YPN,115 requirements.
6.How does Aetrix verify that PBSS2515YPN,115 is sourced from the original manufacturer or authorized distributors?
All PBSS2515YPN,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS2515YPN,115 meets industry standards.
7.What is the process for return or replacement of PBSS2515YPN,115?
All PBSS2515YPN,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS2515YPN,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PBSS2515YPN,115 part is unused and in its original packaging.
Return procedure for PBSS2515YPN,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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