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Nexperia USA Inc. PBSS3515VS,115

Part No.:
PBSS3515VS,115
Manufacturer:
Nexperia USA Inc.
Category:
Bipolar Transistor Arrays
Package:
SOT-563, SOT-666
Datasheet:
AetrixPBSS3515VS,115.pdf
Description:
TRANS 2PNP 15V 500MA SOT-666
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,402

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Product details

Overview

PBSS3515VS from Nexperia is a PNP low VCE(sat) double transistor in SOT666 package, integrating two matched PNP transistors for space-constrained switching and amplification. It delivers −15 V VCEO, −500 mA IC, −250 mV VCE(sat) at IC = −200 mA/IB = −10 mA, and 90 minimum hFE at IC = −500 mA, enabling compact battery-powered audio muting and driver circuits.

For engineers reviewing the PBSS3515VS datasheet, PBSS3515VS pinout, PBSS3515VS application, or PBSS3515VS equivalent, this page provides verified pin functions, thermal resistance (416 K/W), dual-transistor layout rationale, and direct alternatives with validated parameter alignment for PCB area reduction and low-saturation switching.

Technical Context

This device integrates two discrete PNP low-VCE(sat) transistors on a single die within a 1.6 × 1.2 mm SOT666 package, sharing no internal connection between units-each operates independently with separate base, emitter, and collector terminals. Its flat-lead geometry improves thermal conduction and solder self-alignment.

Designed for DC-coupled switching and linear amplification up to audio frequencies, it exhibits tight hFE matching across temperature (200 at −55 °C to 150 °C), stable VCE(sat) ≤ −250 mV under pulsed 200 mA loads, and RCE(sat) of 300–500 mΩ-enabling predictable current-source behavior in portable equipment bias networks.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO −15 V: Maximum safe collector-emitter voltage with base open; defines absolute blocking capability in PNP switch configurations.
IC −500 mA continuous: Sustained collector current per transistor without derating; supports high-current load switching in handheld devices.
VCE(sat) −250 mV at IC = −200 mA/IB = −10 mA: Low saturation voltage minimizes power loss and heat generation in active-switch mode.
hFE 90 min at IC = −500 mA: Ensures reliable current gain under high-current pulsed conditions typical in audio drivers and power control stages.
RCE(sat) 300–500 mΩ: Equivalent on-resistance enables precise modeling as a low-loss current-controlled switch in analog feedback paths.
Rth(j-a) 416 K/W (free air): Thermal resistance value used to calculate junction temperature rise above ambient for single-device thermal design.
fT 100–280 MHz: Transition frequency confirms usable bandwidth up to mid-audio range with margin for stability in amplifier configurations.

Pinout & Package

SOT666 is a 1.6 mm × 1.2 mm × 0.55 mm ultra-thin surface-mount plastic package with six straight leads on 0.5 mm pitch; flat leads enhance thermal dissipation and enable self-alignment during reflow soldering.

Pin/Terminal Circuit Role Design Meaning
1 Emitter of Transistor 1 (E1) Primary current sink node for first PNP unit; connects to local ground or bias return path in dual-stage designs.
2 Base of Transistor 1 (B1) Control input for TR1; requires negative drive relative to E1 to activate; compatible with standard logic-level PNP bias networks.
3 Collector of Transistor 2 (C2) High-side output node for second PNP; referenced to VCC; used for complementary switching or cascode configurations.
4 Emitter of Transistor 2 (E2) Independent emitter terminal for TR2; allows separate biasing or current sensing per transistor without shared node constraints.
5 Base of Transistor 2 (B2) Isolated control input for TR2; enables independent gating of each transistor-critical for differential or push-pull mute functions.
6 Collector of Transistor 1 (C1) Primary output collector for TR1; routed to load or next stage; paired with E1/B1 to form complete low-VCE(sat) switch cell.

Key Features

Feature Design Value
Dual PNP integration in SOT666 Replaces two SC75/SC89 devices on same PCB area-reducing footprint by >50% while maintaining electrical independence.
Low VCE(sat) performance −250 mV max at IC = −200 mA ensures <12.5 mW conduction loss per transistor, critical for battery runtime in mobile audio systems.
Flat-lead thermal design 416 K/W junction-to-ambient resistance in free air enables operation up to 150 °C junction temperature without heatsinking.
Self-aligning lead geometry Straight 0.5 mm pitch leads reduce placement misalignment risk and improve solder joint reliability in high-volume SMT assembly.
Matched hFE and VCE(sat) Typical hFE spread <15% and VCE(sat) variation <10% between TR1/TR2 support balanced dual-channel operation in muting ICs.

Applications

Audio Muting Circuit Portable Device Power Switch

Use Scenario: Dual-channel audio path muting in smartphones and Bluetooth headsets during call transitions or noise suppression.

IC Role / Device Role / Timing Role: Each transistor acts as a grounded-emitter shunt switch across left/right audio lines, activated synchronously via base control.

Use Value: −250 mV VCE(sat) ensures <0.5 dB insertion loss and minimal THD distortion when engaged, preserving signal fidelity.

Use Scenario: Load switching for backlight LEDs or sensor modules in battery-powered video cameras and handheld test equipment.

IC Role / Device Role / Timing Role: TR1 controls main power rail; TR2 manages auxiliary bias or enable sequencing-both driven from same microcontroller GPIO bank.

Use Value: Independent emitter terminals allow separate current monitoring and fault isolation per switched domain without added sense resistors.

Low-Frequency Driver Stage Compact Bias Network Generator

Use Scenario: Class-A preamplifier driver in portable speaker amplifiers requiring low-noise, low-distortion current sourcing.

IC Role / Device Role / Timing Role: TR1 provides emitter-follower output buffering; TR2 supplies stable bias current to TR1's base network.

Use Value: Matched hFE and thermal tracking minimize quiescent current drift over temperature, sustaining consistent gain across −20 °C to +70 °C.

Use Scenario: Generating matched reference currents for analog front-ends in medical wearables and IoT sensor nodes.

IC Role / Device Role / Timing Role: Both transistors configured as current mirrors with identical VBE and RCE(sat) characteristics to replicate bias currents.

Use Value: 300–500 mΩ RCE(sat) enables accurate mirror ratio setting with <2% error across supply voltages from 2.8 V to 5.5 V.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low-VCE(sat) double transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
PBSS3515Z,115 Same silicon, but in SOT363 (SC-70-6) package: larger 2.1 × 2.0 mm footprint, higher Rth(j-a) (500 K/W), and 0.65 mm lead pitch. Less suitable for ultra-dense layouts; better suited for prototyping or where manual rework is required due to larger pad spacing. Select when board assembly lacks fine-pitch SMT capability or thermal requirements permit higher junction rise.
DMN3020LSD-13 N-channel dual MOSFET (not bipolar); 30 V VDS, 2.8 A ID, 30 mΩ RDS(on); requires gate drive, not base current. Enables zero-VGS turn-off and lower static power, but adds level-shifting complexity for high-side PNP replacement. Choose only when system already uses N-channel logic-level gate drivers and thermal budget allows MOSFET gate charge overhead.

Compared with PBSS3515Z,115, the PBSS3515VS offers 30% smaller PCB area and 17% lower thermal resistance; versus DMN3020LSD-13, it eliminates gate-drive circuitry but trades off higher conduction loss at sub-100 mA loads.

Availability

PBSS3515VS is available at Aetrix Electronics and suitable for portable audio muting, battery-powered sensor switching, and compact bias network generation requiring stable component supply and guaranteed long-term manufacturability.

Supply support for PBSS3515VS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors for automotive, industrial, and consumer electronics, delivering high-volume, high-reliability discrete and logic solutions.

PBSS3515VS belongs to Nexperia's low-VCE(sat) transistor family, engineered specifically for space- and power-constrained portable electronics where miniaturization and thermal efficiency are primary design drivers.

FAQ

What is the maximum continuous collector current per transistor in PBSS3515VS?

The PBSS3515VS supports −500 mA continuous collector current per transistor at Tamb ≤ 25 °C with FR4 PCB mounting. Derating applies above 25 °C ambient-junction temperature must remain ≤150 °C, governed by its 416 K/W thermal resistance and actual power dissipation.

Can PBSS3515VS replace two separate SOT323 PNP transistors in an existing design?

Yes-its SOT666 footprint occupies less area than two SOT323 devices and provides identical PNP functionality with matched parameters. Pin mapping differs, so PCB layout revision is required; however, schematic topology remains unchanged as both transistors operate independently with no internal coupling.

What is the significance of the "35" marking on the PBSS3515VS package?

The top-side marking "35" is the manufacturer-assigned code for PBSS3515VS per Nexperia's marking standard (Table 4). It is not a date code or lot identifier-it uniquely identifies this specific double-PNP device variant within the SOT666 package family.

Does PBSS3515VS support automotive-grade temperature operation?

No-PBSS3515VS is explicitly designated as non-automotive qualified per Nexperia's 2022 revision history. Its qualification covers industrial and consumer temperature ranges (−65 °C to +150 °C), but it has not undergone AEC-Q101 stress testing or automotive-specific reliability validation.

PBSS3515VS,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
SOT-563, SOT-666
Packaging:
Tape & Reel (TR)
Product Status:
Last Time Buy
Transistor Type:
2 PNP (Dual)
Current - Collector (Ic) (Max):
500mA
Voltage - Collector Emitter Breakdown (Max):
15V
Vce Saturation (Max) @ Ib, Ic:
250mV @ 50mA, 500mA
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
150 @ 100mA, 2V
Power - Max:
200mW
Frequency - Transition:
280MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-666

PBSS3515VS,115 FAQ

1.How can I place an order for PBSS3515VS,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS3515VS,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS3515VS,115 reliable?

The price and inventory of PBSS3515VS,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS3515VS,115 is usually 5 days.

3.What payment methods are accepted for PBSS3515VS,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS3515VS,115 transactions.

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PBSS3515VS,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS3515VS,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS3515VS,115?

For technical support, including PBSS3515VS,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS3515VS,115 requirements.

6.How does Aetrix verify that PBSS3515VS,115 is sourced from the original manufacturer or authorized distributors?

All PBSS3515VS,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS3515VS,115 meets industry standards.

7.What is the process for return or replacement of PBSS3515VS,115?

All PBSS3515VS,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS3515VS,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS3515VS,115 part is unused and in its original packaging.

Return procedure for PBSS3515VS,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PBSS3515VS,115 Tags

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