Nexperia USA Inc. PBSS4021SP,115

Overview

PBSS4021SP from Nexperia is a dual PNP low V_CEsat Breakthrough In Small Signal (BISS) transistor in SOT96-1 (SO8) package, designed for high-efficiency load switching with −20 V V_CEO, −6.3 A I_C, and 36–54 mΩ R_CEsat at I_C = −5 A / I_B = −0.5 A. It serves as a compact, thermally robust power switch in battery-powered motor control and charging circuits.

For engineers reviewing the PBSS4021SP datasheet, PBSS4021SP pinout, PBSS4021SP application, or PBSS4021SP equivalent, this device supports high-current DC switching with minimal conduction loss, precise thermal derating guidance, and verified dual-transistor integration for space-constrained power management designs.

Technical Context

This dual PNP BISS transistor integrates two matched PNP transistors in a single SO8 package, sharing collector terminals (pins 5/6 and 7/8), with independent emitter-base pairs (pins 1/2 and 3/4). Its architecture enables parallel current handling while maintaining low saturation resistance and tight gain matching across temperature.

It operates under IEC 60134 absolute maximum ratings, including −20 V V_CEO, −15 A I_CM, and 150 °C T_j, with thermal resistance as low as 55 K/W (per device, ceramic PCB). Switching performance includes t_on = 95 ns and t_off = 425 ns at −1 A, supporting efficient PWM-driven loads.

Key Specifications

Pinout & Package

SOT96-1 (SO8) is an 8-lead surface-mount plastic package with 1.27 mm pitch, 3.9 mm body width, and exposed collector pads (pins 5/6/7/8) for enhanced thermal conduction. Pin numbering follows standard SO8 orientation with pin 1 index marker.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual PNP switching applications.

Compared with PBSS4021SP, PBSS4021SPN enables complementary high-side/low-side pairing in bridge topologies, while PBSS4021SN shifts implementation to low-side switching-both retain identical thermal performance and footprint but require re-evaluation of control signal polarity and load grounding.

Availability

PBSS4021SP is available at Aetrix Electronics and suitable for battery-driven devices, power management subsystems, and motor control applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for PBSS4021SP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors for automotive, industrial, and consumer markets.

The PBSS4021SP belongs to Nexperia's BISS transistor product line, engineered specifically for high-efficiency, medium-power switching in space-constrained applications where low V_CEsat and thermal robustness are critical.

FAQ

What is the maximum continuous collector current per transistor in PBSS4021SP?

The PBSS4021SP supports −6.3 A continuous collector current per transistor at T_amb ≤ 25 °C with appropriate PCB copper area. Derating applies above 25 °C per Figure 1 in the datasheet: power dissipation drops linearly to zero at 150 °C junction temperature.

How are the collectors arranged in the SO8 package?

Pins 5 and 6 form one shared collector terminal for TR2; pins 7 and 8 form another shared collector terminal for TR1. Both collector groups are internally isolated but electrically distinct-enabling independent high-side switching of two loads from one package.

Can PBSS4021SP replace standard PNP transistors in existing designs?

Yes, provided the PCB layout accommodates the SO8 footprint and base drive is adjusted: its lower V_CEsat reduces required base current (e.g., −0.5 A at −5 A I_C), and its dual structure may eliminate need for two discrete devices-but pin compatibility must be verified against original layout.

What thermal performance can be expected on a standard FR4 PCB?

On a standard FR4 PCB (single-sided copper, tin-plated, no extended pad), R_th(j-a) is 145 K/W per device, allowing ~0.86 W dissipation at 25 °C ambient. With a 1 cm² collector pad, R_th(j-a) improves to 90 K/W, enabling ~1.4 W dissipation-verified in Table 7 of the datasheet.