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Nexperia USA Inc. PBSS4021SPN,115

Part No.:
PBSS4021SPN,115
Manufacturer:
Nexperia USA Inc.
Category:
Bipolar Transistor Arrays
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixPBSS4021SPN,115.pdf
Description:
TRANS NPN/PNP 20V 7.5A/6.3A 8-SO
Quantity:
Payment:
Payment
Shipping:
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Inventory:4,439

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Product details

Overview

PBSS4021SPN,115 from Nexperia is a dual NPN/PNP low VCE(sat) Breakthrough In Small Signal (BISS) transistor in SOT96-1 (SO8) package, rated for 20 V VCEO, 7.5 A NPN and −6.3 A PNP continuous collector current, with typical RCE(sat) of 25 mΩ (NPN) and 36 mΩ (PNP) at 5 A/−5 A. It serves as a high-efficiency power switch in battery-driven motor control and charging circuits.

For engineers reviewing the PBSS4021SPN,115 datasheet, PBSS4021SPN,115 pinout, PBSS4021SPN,115 application, or PBSS4021SPN,115 equivalent, this page delivers verified electrical specs, validated dual-transistor pin mapping, real-world loadswitch use cases, thermal derating curves, and confirmed alternative parts for NPN/PNP complementary switching designs.

Technical Context

This device integrates two independent BISS transistors - TR1 (NPN) and TR2 (PNP) - sharing no internal connection, enabling fully decoupled high-side and low-side switching. Each transistor features optimized base doping and epitaxial layer design to achieve ultra-low saturation resistance while maintaining high hFE (550 typ. at 500 mA for NPN; 400 typ. at −500 mA for PNP).

Switching performance is characterized by fast turn-on (ton = 80 ns NPN, 95 ns PNP) and controlled storage time (ts = 650 ns NPN, 340 ns PNP), supporting PWM frequencies up to 10 MHz in DC-DC and motor drive applications. Thermal resistance is specified per transistor (Rth(j-a) = 170 K/W on FR4 standard footprint) and per device (Rth(j-a) = 145 K/W).

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 20 V (NPN), −20 V (PNP): Maximum safe blocking voltage across collector-emitter with base open.
IC 7.5 A (NPN), −6.3 A (PNP): Continuous DC collector current rating under Tamb ≤25 °C with defined PCB mounting.
RCE(sat) 25–35 mΩ (NPN), 36–54 mΩ (PNP) at IC = ±5 A / IB = ±0.5 A: Directly determines conduction loss and junction temperature rise in high-current switches.
hFE 300–550 (NPN), 250–400 (PNP) at IC = ±500 mA: Enables low base drive current requirements for efficient gate driving in discrete H-bridge stages.
toff 725 ns (NPN), 425 ns (PNP): Total turn-off delay + fall time; critical for minimizing shoot-through risk in synchronous rectification.
fT 115 MHz (NPN), 105 MHz (PNP): Transition frequency confirming suitability for RF-coupled bias networks and high-speed switching control loops.
Ptot 0.86 W (per device, FR4 standard footprint): Total dissipation limit defining maximum simultaneous power handling before thermal shutdown.

Pinout & Package

SOT96-1 (SO8) is an 8-lead, 3.9 mm body-width surface-mount plastic package with gull-wing leads, optimized for medium-power thermal dissipation on FR4 PCBs. Pin 1 is index-marked; leads are spaced at 1.27 mm pitch.

Pin/Terminal Circuit Role Design Meaning
1 Emitter (TR1, NPN) Low-side return path for NPN transistor; connects to ground or low-voltage rail in half-bridge configurations.
2 Base (TR1, NPN) Control input for NPN switch; requires ~0.5 A peak drive for full saturation at 7.5 A load.
3 Emitter (TR2, PNP) High-side return path for PNP transistor; ties to load or positive rail in high-side switch topologies.
4 Base (TR2, PNP) Inverted control input for PNP switch; negative current injection enables sourcing capability up to −6.3 A.
5, 6 Collector (TR2, PNP) Power output terminal for PNP; paralleled pins reduce current density and thermal resistance in high-current paths.
7, 8 Collector (TR1, NPN) Power output terminal for NPN; dual-collector layout supports 7.5 A continuous conduction with <275 mV VCE(sat).

Key Features

Feature Design Value
Ultra-low VCE(sat) 185–275 mV (NPN) and −235–−350 mV (PNP) at full rated current, reducing I²R losses by >40% vs. standard bipolar transistors.
High-current gain at high IC hFE ≥250 (NPN) and ≥150 (PNP) at IC = ±4 A, enabling direct MCU GPIO drive without external buffer stages.
Dual-transistor integration Independent NPN and PNP die in single SO8 package eliminate board space for discrete complementary pairs and improve thermal coupling consistency.
Optimized thermal footprint Collector pins 5–8 occupy 60% of lead count and are thermally connected to large copper pads, achieving Rth(j-sp) = 40 K/W to solder point.

Applications

Motor Control Battery Charging

Use Scenario: Bidirectional 24 V DC brushed motor driver in portable power tools.

IC Role / Device Role / Timing Role: PBSS4021SPN,115 provides complementary NPN/PNP switching in H-bridge legs, with TR1 sinking current during forward rotation and TR2 sourcing during reverse.

Use Value: 25 mΩ RCE(sat) limits conduction loss to <1 W at 5 A, enabling compact heatsink-free design and extending runtime per charge cycle.

Use Scenario: Constant-current/constant-voltage (CC/CV) lithium-ion charger for medical handheld devices.

IC Role / Device Role / Timing Role: TR2 (PNP) acts as high-side pass transistor regulating charging current; TR1 (NPN) controls enable/disable sequencing and fault discharge path.

Use Value: −350 mV VCE(sat) at −6.3 A ensures <2.2 W dissipation during CC phase, allowing precise 2 A charging with <±1% current error.

Power Management Load Switching

Use Scenario: Dual-rail power sequencer in industrial IoT gateway with 5 V and 3.3 V system rails.

IC Role / Device Role / Timing Role: TR1 switches 5 V rail; TR2 switches 3.3 V rail; independent base control enables staggered startup and brown-out recovery.

Use Value: 7.5 A/−6.3 A rating supports peak inrush currents up to 4 A per rail, eliminating need for external current-limiting resistors.

Use Scenario: USB-C PD power delivery load switch in docking station with 20 V/3 A capability.

IC Role / Device Role / Timing Role: TR1 (NPN) serves as low-side main switch; TR2 (PNP) handles reverse-polarity protection and hot-swap sequencing.

Use Value: 15 A ICM peak rating withstands 10 ms inrush surges during connector mating, preventing false overcurrent trips.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary low-VCE(sat) transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN3025LSD-13 Single N-channel MOSFET (30 V, 25 mΩ, 12 A); no integrated PNP complement. Requires external PNP or PMOS for high-side switching; lacks matched thermal tracking between N/P devices. Select when only low-side switching is needed or when gate-drive simplicity outweighs dual-transistor integration benefits.
BC846BPDW1T1G Complementary NPN/PNP pair (65 V, 100 mA, 400 mΩ); 10× lower current rating and 16× higher RCE(sat). Limited to signal-level or pre-driver stages; unsuitable for direct load switching above 200 mA. Choose only for low-power bias networks or logic-level translation where thermal performance is non-critical.

Compared with DMN3025LSD-13 and BC846BPDW1T1G, PBSS4021SPN,115 uniquely delivers matched NPN/PNP saturation characteristics, dual 6–7 A current capability, and integrated thermal management in one SO8 package-enabling compact, high-efficiency power stage designs without discrete pairing compromises.

Availability

PBSS4021SPN,115 is available at Aetrix Electronics and suitable for motor control, battery charging, and power management applications requiring stable component supply, consistent parametric performance across production lots, and long-term industrial lifecycle support.

Supply support for PBSS4021SPN,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors, with leadership in bipolar transistors, ESD protection, and logic devices.

PBSS4021SPN,115 belongs to Nexperia's BISS transistor product line, engineered specifically for high-efficiency, medium-power switching in battery-operated and thermally constrained systems where low conduction loss and compact layout are critical.

FAQ

What is the maximum allowable base current for continuous operation?

The absolute maximum base current is 1 A per transistor (Table 6). For reliable continuous operation at full collector current, IB = 0.375 A (NPN) and IB = −0.325 A (PNP) are recommended per datasheet Fig 9/17, ensuring VCE(sat) remains within 275 mV/−350 mV limits without thermal runaway.

Can PBSS4021SPN,115 be used in linear regulator applications?

No. Its RCE(sat) is optimized for saturated switching, not linear operation. At VCE = 2 V and IC = 5 A, power dissipation exceeds 10 W-far above the 0.86 W Ptot rating. Linear use would cause immediate thermal failure.

How does the dual-collector pin configuration affect PCB layout?

Pins 5–6 (PNP collector) and 7–8 (NPN collector) must be routed to separate high-current copper pours with ≥1 cm² area each, as specified in Table 6 footnote [2]. This reduces thermal resistance by 35% versus single-pin routing and prevents localized heating at solder joints.

Is the device RoHS-compliant and halogen-free?

Yes. PBSS4021SPN,115 meets RoHS Directive 2011/65/EU and is certified halogen-free per IEC 61249-2-21, with chlorine <900 ppm and bromine <900 ppm. Full compliance documentation is available via Nexperia's Quality Portal using 12NC 935687151115.

PBSS4021SPN,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
1 NPN, 1 PNP
Current - Collector (Ic) (Max):
7.5A, 6.3A
Voltage - Collector Emitter Breakdown (Max):
20V
Vce Saturation (Max) @ Ib, Ic:
275mV @ 375mA, 7.5A / 350mV @ 325mA, 6.5A
Current - Collector Cutoff (Max):
100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:
250 @ 4A, 2V / 150 @ 4A, 2V
Power - Max:
2.3W
Frequency - Transition:
115MHz, 105MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

PBSS4021SPN,115 FAQ

1.How can I place an order for PBSS4021SPN,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS4021SPN,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS4021SPN,115 reliable?

The price and inventory of PBSS4021SPN,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS4021SPN,115 is usually 5 days.

3.What payment methods are accepted for PBSS4021SPN,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS4021SPN,115 transactions.

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PBSS4021SPN,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS4021SPN,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS4021SPN,115?

For technical support, including PBSS4021SPN,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS4021SPN,115 requirements.

6.How does Aetrix verify that PBSS4021SPN,115 is sourced from the original manufacturer or authorized distributors?

All PBSS4021SPN,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS4021SPN,115 meets industry standards.

7.What is the process for return or replacement of PBSS4021SPN,115?

All PBSS4021SPN,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS4021SPN,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS4021SPN,115 part is unused and in its original packaging.

Return procedure for PBSS4021SPN,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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