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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar Transistor Arrays

Nexperia USA Inc. PBSS4032SP,115

Name: PBSS4032SP,115
Brand: Nexperia USA Inc.
SKU: PBSS4032SP,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PBSS4032SP,115

Manufacturer:: Nexperia USA Inc.

Category:: Bipolar Transistor Arrays

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: PBSS4032SP,115.pdf

Description:: TRANS 2PNP DUAL 30V 4.8A 8-SO

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Product details

Overview

PBSS4032SP from Nexperia is a dual PNP low V_CEsat BISS transistor in SOT96-1 (SO8) package, designed for high-efficiency switching in power management circuits. It delivers −30 V V_CEO, −4.8 A continuous I_C, 65 mΩ typical R_CEsat at −4 A/−0.4 A drive, and optimized 90 ns turn-on time - enabling compact DC-DC converters and battery charging stages.

For engineers reviewing the PBSS4032SP datasheet, PBSS4032SP pinout, PBSS4032SP application, or PBSS4032SP equivalent, key selection criteria include verified dual-PNP topology, thermal resistance of 75 K/W on ceramic PCB, collector-emitter saturation voltage below −390 mV at full load, and SO8 footprint compatibility with high-current PCB layout requirements.

Technical Context

This device integrates two independent PNP BISS transistors in a single SO8 package, sharing no internal connection between channels. Each transistor supports −10 A peak I_CM under 1 ms pulses and maintains h_FE ≥60 at −4 A collector current, enabling robust current amplification in high-side switch configurations.

Its low R_CEsat (65–98 mΩ) and sub-1 V V_BEsat reduce conduction losses, while 115 MHz f_T and <220 ns total switching time support efficient operation up to several hundred kHz in synchronous rectification and PWM-controlled power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−30 V: Maximum blocking voltage per transistor; enables use in 24 V system rails with safety margin.
I_C	−4.8 A continuous: Sustained current handling per channel; supports >10 W dissipation with proper heatsinking.
R_CEsat	65 mΩ typ @ −4 A/−0.4 A: Low on-resistance reduces I²R loss by >40% vs. standard PNP transistors at same current.
h_FE	60–100 @ −4 A: High current gain ensures reliable saturation with modest base drive, easing driver design.
f_T	115 MHz: Sufficient gain-bandwidth for stable feedback in high-frequency switching control loops.
t_off	220 ns: Fast turn-off minimizes cross-conduction risk in half-bridge or complementary switch topologies.
P_tot (per device)	2.3 W max on Al₂O₃ PCB: Enables higher power density than discrete SOT23 alternatives without external heatsink.

Pinout & Package

SOT96-1 (SO8) plastic surface-mount package with 3.9 mm body width, 1.27 mm lead pitch, and exposed collector pads on pins 5–8 for enhanced thermal transfer.

Pin/Terminal	Circuit Role	Design Meaning
1	Emitter TR1	Current sink node for first PNP transistor; connects to load return path in high-side switch.
2	Base TR1	Control input for TR1; requires −0.4 A drive for full saturation at −4 A collector current.
3	Emitter TR2	Current sink node for second independent PNP transistor; enables dual-channel operation.
4	Base TR2	Independent control input for TR2; allows asynchronous or complementary switching.
5, 6, 7, 8	Collector TR2 / Collector TR1	Shared collector terminals: pins 5–6 serve TR2, pins 7–8 serve TR1; all tied to high-voltage rail or heatsink plane.

Key Features

Feature	Design Value
Dual PNP topology	Two electrically isolated PNP transistors in one SO8 package reduce board area by 35% vs. two discrete SOT23 devices.
Low R_CEsat	65 mΩ typical enables <0.7 W conduction loss at −4 A, cutting thermal load in battery-powered systems.
High h_FE at high I_C	100 at −4 A ensures deep saturation with minimal base current, lowering driver IC power consumption.
Optimized switching speed	90 ns t_on/220 ns t_off supports >200 kHz PWM frequency without significant dead-time penalty.
Thermal performance	55 K/W R_th(j-a) on FR4 with 1 cm² collector pad enables 1.4 W continuous dissipation without forced air.

Applications

Battery Charging Circuit

DC-DC Buck Converter

Use Scenario: Constant-current/constant-voltage charging for Li-ion packs in portable medical devices.

IC Role / Device Role / Timing Role: High-side PNP switch controlling charge current into battery cell stack.

Use Value: 65 mΩ R_CEsat limits voltage drop to <260 mV at 4 A, preserving >98% charging efficiency and minimizing thermal stress on PCB.

Use Scenario: Synchronous rectification stage in 12 V → 3.3 V buck converter for industrial IoT sensor nodes.

IC Role / Device Role / Timing Role: Low-side PNP switch replacing Schottky diode to reduce forward voltage loss.

Use Value: Sub-400 mV V_CEsat at full load cuts conduction loss by 60% vs. 0.4 V diode, extending battery runtime by 12%.

Power Management Unit

Load Switch for 24 V Rail

Use Scenario: Dual-rail sequencing and overcurrent protection in FPGA-based edge computing modules.

IC Role / Device Role / Timing Role: Independent PNP switches enabling controlled power-up of core and I/O supplies.

Use Value: Matched h_FE across both transistors ensures consistent turn-on timing (<10 ns skew), preventing supply rail collapse during startup.

Use Scenario: Hot-swap enable for 24 V auxiliary power in automotive telematics gateways.

IC Role / Device Role / Timing Role: High-side PNP switch with fast 220 ns turn-off limiting fault energy during short-circuit events.

Use Value: 10 A I_CM rating withstands inrush currents up to 8 A, while 150 °C T_j rating sustains operation in under-hood ambient conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-PNP switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PBSS4040SP	Higher V_CEO (−40 V) but lower I_C (−3.5 A) and higher R_CEsat (105 mΩ)	Better suited for 36 V industrial buses; less optimal for high-current 24 V systems	Select when system voltage exceeds 30 V and current demand is ≤3.5 A
ZXTD09N50DE6TA	PNP/NPN complementary pair in SOT23-6; no dual-PNP configuration	Requires external biasing for PNP channel; not pin-compatible	Choose only if complementary switching is needed and board space permits two devices

Compared with PBSS4032SP, PBSS4040SP trades current capability for higher voltage tolerance, while ZXTD09N50DE6TA offers complementary topology at the cost of integration density and direct replacement feasibility.

Availability

PBSS4032SP is available at Aetrix Electronics and suitable for DC-to-DC conversion, battery-driven devices, and power management applications requiring stable component supply and long-term production continuity.

Supply support for PBSS4032SP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors for automotive, industrial, and consumer markets.

The PBSS4032SP belongs to Nexperia's BISS transistor product line, engineered specifically for high-efficiency, medium-power switching in space-constrained power management systems where low V_CEsat and thermal performance are critical.

FAQ

What is the maximum safe operating junction temperature for PBSS4032SP?

The absolute maximum junction temperature (T_j) is 150 °C, validated per IEC 60134. Operation above this threshold causes irreversible degradation. Derating is required above 25 °C ambient: power dissipation must be reduced linearly to zero at 150 °C case temperature when mounted on ceramic PCB.

Can PBSS4032SP replace two separate SOT23 PNP transistors in a design?

Yes - its dual-PNP structure in SO8 replaces two discrete SOT23 devices while delivering superior thermal performance (55 K/W vs. >200 K/W per SOT23) and matched electrical characteristics. Pin compatibility requires PCB layout revision, but netlist equivalence is maintained with identical emitter/base/collector connections per channel.

Is PBSS4032SP suitable for linear regulator applications?

No - it is optimized for switching operation, not linear mode. Its low R_CEsat and high h_FE provide no benefit in linear regulation, and its thermal resistance is insufficient for sustained high-V_CE × I_C dissipation. Use dedicated LDOs or Darlington regulators instead.

What is the recommended PCB layout for optimal thermal performance?

Use a minimum 1 cm² copper pour connected to pins 5–8 (collectors) on an FR4 board, tin-plated and thermally relieved. For ceramic substrates, extend the collector pad to match the full SO8 footprint. Avoid thermal vias under the package body; place them only within the collector pad area to minimize thermal resistance to ambient.

PBSS4032SP,115 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: 2 PNP (Dual)

Current - Collector (Ic) (Max):: 4.8A

Voltage - Collector Emitter Breakdown (Max):: 30V

Vce Saturation (Max) @ Ib, Ic:: 510mV @ 250mA, 5A

Current - Collector Cutoff (Max):: 100nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 150 @ 2A, 2V

Power - Max:: 2.3W

Frequency - Transition:: 115MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

PBSS4032SP,115 FAQ

1.How can I place an order for PBSS4032SP,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS4032SP,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS4032SP,115 reliable?

The price and inventory of PBSS4032SP,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS4032SP,115 is usually 5 days.

3.What payment methods are accepted for PBSS4032SP,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS4032SP,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS4032SP,115?

PBSS4032SP,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS4032SP,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS4032SP,115?

For technical support, including PBSS4032SP,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS4032SP,115 requirements.

6.How does Aetrix verify that PBSS4032SP,115 is sourced from the original manufacturer or authorized distributors?

All PBSS4032SP,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS4032SP,115 meets industry standards.

7.What is the process for return or replacement of PBSS4032SP,115?

All PBSS4032SP,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS4032SP,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS4032SP,115 part is unused and in its original packaging.

Return procedure for PBSS4032SP,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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