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Nexperia USA Inc. PBSS4032SPN,115

Part No.:
PBSS4032SPN,115
Manufacturer:
Nexperia USA Inc.
Category:
Bipolar Transistor Arrays
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixPBSS4032SPN,115.pdf
Description:
TRANS NPN/PNP 30V 5.7A/4.8A 8-SO
Quantity:
Payment:
Payment
Shipping:
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Inventory:2,415

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Product details

Overview

PBSS4032SPN from Nexperia is a dual NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in SOT96-1 (SO8) package, rated for 30 V VCEO, 5.7 A NPN and −4.8 A PNP continuous collector current, with RCEsat as low as 45 mΩ (NPN) and 65 mΩ (PNP) at 4 A, used in high-efficiency DC-DC converters and battery power management circuits.

For engineers reviewing the PBSS4032SPN datasheet, PBSS4032SPN pinout, PBSS4032SPN application, or PBSS4032SPN equivalent, this device supports compact, thermally efficient switching in dual-polarity load control, synchronous rectification, and bidirectional current handling where low conduction loss and fast switching are critical.

Technical Context

This dual BISS transistor integrates complementary NPN and PNP structures on a single die in an SO8 package, enabling matched thermal behavior and tightly coupled switching characteristics. Its architecture delivers low saturation resistance via optimized epitaxial layer design and emitter ballasting, supporting high-current operation without external current-sharing components.

The device operates with independent base drive for each transistor, allowing asynchronous or synchronous control modes. Switching times-td = 35 ns (NPN), ts = 150 ns (NPN), toff = 215 ns (NPN); td = 30 ns (PNP), ts = 140 ns (PNP), toff = 220 ns (PNP)-are specified under defined pulse conditions (tp ≤300 μs, duty ≤0.02), confirming suitability for high-frequency (>100 kHz) power conversion topologies.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 30 V (NPN), −30 V (PNP): Maximum safe blocking voltage across collector-emitter with base open; defines usable input/output voltage range in switching applications.
IC 5.7 A (NPN), −4.8 A (PNP): Continuous DC collector current rating; sets maximum steady-state load current per transistor without derating.
RCEsat 45–62.5 mΩ (NPN), 65–98 mΩ (PNP) at IC = ±4 A: Low saturation resistance directly reduces conduction loss and junction heating in high-current switches.
hFE 200–500 (NPN), 40–380 (PNP) at IC = ±0.5–±2 A: High DC current gain enables low base drive current requirements, easing driver design and reducing gate-drive losses.
fT 140 MHz (NPN), 115 MHz (PNP): Transition frequency confirms high-speed small-signal amplification capability and supports fast switching transitions.
toff 215 ns (NPN), 220 ns (PNP): Total turn-off time under standardized test conditions; determines minimum dead-time requirements in bridge configurations.
Ptot 0.86 W (FR4, standard footprint), up to 2.3 W (ceramic PCB): Total power dissipation limit defines thermal design envelope and heatsinking needs.

Pinout & Package

SOT96-1 (SO8) is an 8-lead, medium-power surface-mount plastic package with 1.27 mm lead pitch, 3.9 mm body width, and exposed collector pads for enhanced thermal performance. Pin 1 is indexed, and the package supports reflow and wave soldering per JEDEC standards.

Pin/Terminal Circuit Role Design Meaning
1 Emitter (TR1, NPN) Low-impedance emitter connection for NPN transistor; referenced to ground in low-side switch configuration.
2 Base (TR1, NPN) Control input for NPN transistor; requires ~0.4 A base current to fully saturate at 4 A collector current.
3 Emitter (TR2, PNP) Emitter connection for PNP transistor; typically tied to positive rail in high-side switch configuration.
4 Base (TR2, PNP) Control input for PNP transistor; negative base current required for turn-on; polarity-sensitive drive interface.
5, 6 Collector (TR2, PNP) Shared high-current output node for PNP; electrically connected internally; used for high-side load connection.
7, 8 Collector (TR1, NPN) Shared high-current output node for NPN; electrically connected internally; used for low-side load connection.

Key Features

Feature Design Value
Low VCEsat As low as 90 mV (NPN) and −115 mV (PNP) at 1 A/50 mA drive-reduces conduction loss by >40% vs. standard bipolar transistors.
High current gain at high IC hFE ≥ 200 at IC = 4 A (NPN), ≥ 60 at IC = −4 A (PNP)-enables direct microcontroller drive without intermediate buffer stages.
Optimized switching speed Turn-on/off times < 220 ns with controlled storage time-supports >500 kHz PWM frequencies in synchronous buck/boost converters.
Thermal efficiency Rth(j-a) = 55 K/W (FR4, 1 cm² collector pad)-enables 1.4 W dissipation without external heatsink in space-constrained PCB layouts.
PCB area reduction Single SO8 replaces two discrete SOT23/SOT223 devices-saves ≥40% board area while improving thermal coupling and layout symmetry.

Applications

DC-DC Converters Battery Management Systems

Use Scenario: Synchronous rectification in 12 V → 3.3 V buck converter for portable medical monitors.

IC Role / Device Role / Timing Role: NPN/TR1 acts as low-side synchronous switch; PNP/TR2 serves as high-side switch in complementary topology.

Use Value: 45 mΩ RCEsat cuts conduction loss by 0.7 W vs. Schottky diode solution, extending battery runtime by 12% at 3 A load.

Use Scenario: Dual-direction current control in USB-C PD 20 V/3 A charging circuit with reverse-polarity protection.

IC Role / Device Role / Timing Role: PNP/TR2 blocks reverse current during discharge; NPN/TR1 handles forward charging path with minimal dropout.

Use Value: Matched VCEsat and thermal tracking between NPN/PNP ensure balanced stress during charge/discharge cycling, improving reliability over 500 cycles.

Power Distribution Units Industrial Motor Drivers

Use Scenario: Hot-swap controller for 24 V industrial PLC backplane with inrush limiting and fault isolation.

IC Role / Device Role / Timing Role: NPN/TR1 controls main power path; PNP/TR2 drives gate of external MOSFET for precise current foldback.

Use Value: 10 A ICM peak rating supports 2× inrush surge without latch-up; low RCEsat avoids thermal runaway during sustained 5 A faults.

Use Scenario: H-bridge half-bridge driver for 24 V, 2 A brushed DC motor in automated valve actuator.

IC Role / Device Role / Timing Role: Complementary NPN/PNP pair forms one leg of full H-bridge, enabling bidirectional torque control.

Use Value: 140/115 MHz fT ensures clean square-wave drive at 20 kHz PWM; matched switching delays minimize shoot-through risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-polarity switching transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
PBSS4042SPN Higher VCEO (40 V), lower RCEsat (35 mΩ NPN / 50 mΩ PNP), same SO8 package. Better suited for 36 V automotive or industrial bus applications requiring higher voltage margin. Select when system bus voltage exceeds 30 V or when <40 mΩ RCEsat is mandatory for thermal budget.
ZXTD0905N Lower IC (3 A NPN / −2.5 A PNP), smaller SOT363 package, higher RCEsat (80–120 mΩ). Targeted at space-constrained consumer electronics with <2 A loads and <1 MHz switching. Choose only for ultra-compact designs where 5.7 A current capability is unnecessary and board area is premium.

Compared with PBSS4032SPN, PBSS4042SPN offers higher voltage headroom and lower conduction loss at cost of slightly higher price, while ZXTD0905N trades current capacity and thermal performance for miniaturization-making PBSS4032SPN the optimal balance for 24–30 V, 3–5 A industrial power stages.

Availability

PBSS4032SPN is available at Aetrix Electronics and suitable for DC-to-DC conversion, battery-driven devices, and power management systems requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for PBSS4032SPN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable components for automotive, industrial, and consumer markets with emphasis on efficiency and miniaturization.

PBSS4032SPN belongs to Nexperia's BISS transistor product line, engineered specifically for high-current, low-loss switching in compact power management IC replacements and discrete power stage designs.

FAQ

What is the maximum allowable base current for continuous operation?

The absolute maximum base current is 1 A per transistor, as specified in Table 6 Limiting Values. However, typical drive conditions use IB = 0.4 A for NPN (at IC = 4 A) and IB = −0.4 A for PNP to achieve full saturation with margin. Exceeding 1 A risks metallization failure or bond wire overheating even with short pulses.

Can PBSS4032SPN be used in linear regulator applications?

No-it is not characterized or qualified for linear operation. The device lacks guaranteed Safe Operating Area (SOA) curves beyond pulsed conditions, and its thermal resistance (Rth(j-a) ≥ 55 K/W) limits continuous power dissipation to ≤1.4 W. Linear regulation would require stable DC biasing and SOA compliance, which are outside its design scope.

How are the two transistors electrically isolated within the SO8 package?

The NPN (TR1) and PNP (TR2) share no internal electrical connection-their collectors, emitters, and bases are fully isolated except for common thermal substrate. Pin 1/2 (TR1) and Pin 3/4/5/6 (TR2) form separate signal domains. This allows independent biasing, floating high-side PNP operation, and true complementary switching without cross-conduction risk.

Is the 115 in PBSS4032SPN,115 a date code or packaging indicator?

The "115" is a packing code indicating 1000-unit tape-and-reel packaging per Table 9, not a date code. It corresponds to the last three digits of the 12NC ordering code and specifies 8 mm tape width, 12 mm reel diameter, and EIA-481-compliant carrier tape-critical for automated SMT placement compatibility.

PBSS4032SPN,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
1 NPN, 1 PNP
Current - Collector (Ic) (Max):
5.7A, 4.8A
Voltage - Collector Emitter Breakdown (Max):
30V
Vce Saturation (Max) @ Ib, Ic:
450mV @ 300mA, 6A / 510mV @ 250mA, 5A
Current - Collector Cutoff (Max):
100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:
250 @ 2A, 2V / 150 @ 2A, 2V
Power - Max:
2.3W
Frequency - Transition:
140MHz, 115MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

PBSS4032SPN,115 FAQ

1.How can I place an order for PBSS4032SPN,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS4032SPN,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS4032SPN,115 reliable?

The price and inventory of PBSS4032SPN,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS4032SPN,115 is usually 5 days.

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PBSS4032SPN,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS4032SPN,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS4032SPN,115?

For technical support, including PBSS4032SPN,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS4032SPN,115 requirements.

6.How does Aetrix verify that PBSS4032SPN,115 is sourced from the original manufacturer or authorized distributors?

All PBSS4032SPN,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS4032SPN,115 meets industry standards.

7.What is the process for return or replacement of PBSS4032SPN,115?

All PBSS4032SPN,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS4032SPN,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS4032SPN,115 part is unused and in its original packaging.

Return procedure for PBSS4032SPN,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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