My Inquiry
My Account
Nexperia USA Inc. PBSS4112PAN,115
- Part No.:
- PBSS4112PAN,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays
- Package:
- 6-UFDFN Exposed Pad
- Datasheet:
-
PBSS4112PAN,115.pdf
- Description:
- TRANS 2NPN 120V 1A 6HUSON
- Quantity:
- Payment:
- Shipping:
Inventory:1,990
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PBSS4112PAN,115 from Nexperia is a dual NPN low VCEsat (BISS) transistor in DFN2020-6 (SOT1118) package, designed for high-efficiency load switching in space-constrained automotive and portable power systems. It delivers 120 V VCEO, 1 A continuous IC, 240 mΩ RCEsat at 500 mA/50 mA drive, and AEC-Q101 qualification - enabling compact, thermally efficient motor and battery-charging switches.
For engineers reviewing the PBSS4112PAN,115 datasheet, PBSS4112PAN,115 pinout, PBSS4112PAN,115 application, or PBSS4112PAN,115 equivalent, key selection criteria include verified dual-NPN BISS topology, thermal resistance as low as 86 K/W (4-layer PCB), 205–260 mV VCEsat at 1 A/100 mA drive, and precise 6-pin DFN2020-6 terminal mapping for layout-critical SMT designs.
Technical Context
This device integrates two matched NPN transistors in a single ultra-thin DFN2020-6 package with shared thermal path and symmetrical pinout. Its Breakthrough In Small Signal (BISS) architecture achieves low saturation voltage via optimized epitaxial layer design and emitter ballasting, supporting high-current switching without external heat sinks.
Each transistor operates independently with VCEO = 120 V, IC = 1 A, and guaranteed hFE ≥ 30 at 1 A - enabling direct replacement of discrete transistor pairs while reducing PCB area by >40% and improving thermal coupling between devices.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 120 V - Maximum collector-emitter blocking voltage per transistor; supports 24 V/48 V automotive and industrial bus systems with margin. |
| IC | 1 A continuous - Rated DC collector current per transistor; enables direct driving of small motors, solenoids, and LED arrays. |
| VCEsat @ 1 A/100 mA | 170–220 mV - Confirmed saturation voltage under full-load switching; reduces conduction loss to <220 mW at 1 A. |
| RCEsat | 240 mΩ - Collector-emitter on-resistance at 500 mA/50 mA; simplifies thermal modeling for FR4 or 4-layer PCB layouts. |
| hFE @ 1 A | 30–45 - Minimum DC current gain at full rated current; ensures reliable saturation with standard 100 mA base drive. |
| AEC-Q101 qualified | Qualified for automotive applications - Validated for temperature cycling, HTRB, and ESD per AEC-Q101 Rev G. |
| Tj max | 150 °C - Maximum junction temperature; allows operation in under-hood environments up to 125 °C ambient with derating. |
Pinout & Package
DFN2020-6 (SOT1118) package: 2.0 mm × 2.0 mm × 0.65 mm body, leadless, thermally enhanced, with exposed die pad for solder attachment. Optimized for reflow assembly and high-power density routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | E1 | Emitter of transistor TR1 - Connected to low-side return path; electrically tied to thermal pad in layout. |
| 2 | B1 | Base of transistor TR1 - Requires 100 mA drive for full saturation; routed with controlled impedance to minimize switching noise. |
| 3 | C2 | Collector of transistor TR2 - High-side output node; shares thermal mass with C1 for balanced power dissipation. |
| 4 | E2 | Emitter of transistor TR2 - Independent return path; enables dual-switch topologies like half-bridge or dual load control. |
| 5 | B2 | Base of transistor TR2 - Electrically isolated from B1; supports independent control of each transistor. |
| 6 | C1 | Collector of transistor TR1 - Primary high-side output; bonded directly to thermal pad for lowest Rth(j-sp) = 30 K/W. |
Key Features
| Feature | Design Value |
|---|---|
| Dual NPN BISS topology | Two matched, independent NPN transistors in one DFN2020-6 footprint - eliminates pairing mismatch and saves >40% board area vs. discrete SO8 solutions. |
| Ultra-low VCEsat | 205–260 mV at 1 A/100 mA drive - cuts conduction loss by >50% versus standard bipolar transistors, reducing heatsink requirements. |
| Thermal performance | Rth(j-a) = 86 K/W (4-layer PCB, 70 µm Cu, 1 cm² collector pad) - enables 2 W continuous dissipation without forced air. |
| AEC-Q101 qualification | Validated for automotive under-hood use - includes HTGB, H3TRB, and ESD ≥ 2 kV HBM per transistor. |
| High hFE at high IC | hFE ≥ 30 at 1 A - ensures robust saturation with minimal base drive current, lowering MCU GPIO loading. |
Applications
| Automotive Body Control Module | USB-C Power Delivery Switch |
|---|---|
|
Use Scenario: Driving door lock actuators and interior lighting loads in 12 V vehicle electrical systems. IC Role / Device Role / Timing Role: Dual NPN load switch controlling two independent 1 A resistive/inductive loads with fast turn-on (<460 ns) and low-loss conduction. Use Value: AEC-Q101 qualification and 150 °C Tj rating ensure reliability across -40 °C to +125 °C ambient; 205 mV VCEsat limits self-heating during extended duty cycles. |
Use Scenario: Enabling/disabling VBUS paths in USB-C PD sink applications with programmable current limiting. IC Role / Device Role / Timing Role: High-side load switch for 5–20 V VBUS rails, using one transistor for main path and second for auxiliary monitoring or redundancy. Use Value: 120 V VCEO provides margin against voltage transients; 240 mΩ RCEsat ensures <100 mW loss at 500 mA, supporting thermally constrained Type-C connector layouts. |
| Portable Medical Pump Driver | Lithium Battery Protection Circuit |
|
Use Scenario: Controlling micro-stepper or DC brush motors in handheld infusion pumps requiring silent, efficient switching. IC Role / Device Role / Timing Role: Dual low-saturation switch managing motor direction and enable functions in H-bridge auxiliary control logic. Use Value: Matched hFE and VCEsat between TR1/TR2 minimizes timing skew; DFN2020-6 footprint fits within tight 10 mm × 10 mm PCB envelopes. |
Use Scenario: Implementing overcurrent and short-circuit protection in 2-cell Li-ion battery packs (8.4 V nominal). IC Role / Device Role / Timing Role: Precision current-sense switch pair where one transistor handles main discharge path and the other monitors fault conditions. Use Value: 1.5 A ICM peak rating withstands surge currents during hot-plug events; 7 V VEBO prevents false triggering from cell voltage spikes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-NPN switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PBSS4112PANP | NPN/PNP complementary pair in same DFN2020-6 package; VCEO = 120 V, IC = 1 A, but PNP side has higher VCEsat (300–400 mV). | Suitable for push-pull or level-shifting circuits requiring complementary drive, not dual high-side switching. | Select when bidirectional current control or rail-to-rail signal inversion is required instead of dual NPN load switching. |
| DMN3029LFG-7 | Single N-channel MOSFET (30 V, 4.5 A, 29 mΩ); no dual topology, different package (SOT-23), and no AEC-Q101 rating. | Used in low-voltage DC-DC load switches where gate drive simplicity outweighs voltage rating and automotive compliance. | Choose only for ≤12 V non-automotive applications needing lower RDS(on); not drop-in due to topology, voltage, and qualification mismatch. |
Compared with PBSS4112PAN,115, PBSS4112PANP offers complementary polarity at identical voltage/current ratings but sacrifices low-saturation symmetry, while DMN3029LFG-7 provides superior on-resistance at 30 V but lacks dual functionality, automotive qualification, and 120 V capability - making PBSS4112PAN,115 uniquely suited for AEC-Q101-compliant dual-NPN 120 V switching.
Availability
PBSS4112PAN,115 is available at Aetrix Electronics and suitable for automotive body control modules, USB-C power delivery systems, portable medical pump drivers, and lithium battery protection circuits requiring stable component supply and long-term lifecycle support.
Supply support for PBSS4112PAN,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors - delivering discrete, logic, and MOSFET solutions optimized for efficiency, miniaturization, and automotive-grade robustness.
PBSS4112PAN,115 belongs to Nexperia's BISS transistor product line, engineered specifically for high-current, low-loss switching in space-constrained automotive and industrial power management applications.
FAQ
What is the thermal pad connection requirement for PBSS4112PAN,115?
The exposed thermal pad (pin 6/C1 and internal die attach) must be soldered to a minimum 1 cm² copper area on a 4-layer PCB with 70 µm traces to achieve the rated 86 K/W Rth(j-a). Omitting this pad or using insufficient copper increases junction temperature by >40 °C at 1 A, risking thermal shutdown or accelerated degradation.
Can PBSS4112PAN,115 replace two separate SOT23 transistors in a design?
Yes - its dual NPN configuration matches the functional behavior of two discrete SOT23-3 transistors, but requires PCB layout revision to accommodate the 2.0 mm × 2.0 mm DFN2020-6 footprint and 6-pin routing. Pin compatibility is not maintained; base-emitter-collector assignments differ from standard SOT23 orientation.
Is the 120 V VCEO rating valid for both transistors simultaneously?
Yes - each transistor (TR1 and TR2) is independently rated for 120 V VCEO with open base, as confirmed in Table 5 (Limiting Values). This allows independent use of either transistor in 100 V-class applications such as 48 V telecom or industrial bus switching without derating.
Does PBSS4112PAN,115 support PWM switching above 10 kHz?
Yes - with ton = 460 ns and toff = 1005 ns, it supports clean PWM operation up to 100 kHz in low-duty-cycle applications. For sustained 50% duty cycle above 20 kHz, ensure base drive strength ≥100 mA and minimize trace inductance to prevent ringing-induced VCE overshoot beyond 120 V.
PBSS4112PAN,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-UFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 NPN (Dual)
- Current - Collector (Ic) (Max):
- 1A
- Voltage - Collector Emitter Breakdown (Max):
- 120V
- Vce Saturation (Max) @ Ib, Ic:
- 120mV @ 50mA, 500mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 60 @ 500mA, 2V
- Power - Max:
- 510mW
- Frequency - Transition:
- 120MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-HUSON (2x2)
PBSS4112PAN,115 FAQ
1.How can I place an order for PBSS4112PAN,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PBSS4112PAN,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PBSS4112PAN,115 reliable?
The price and inventory of PBSS4112PAN,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS4112PAN,115 is usually 5 days.
3.What payment methods are accepted for PBSS4112PAN,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS4112PAN,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PBSS4112PAN,115?
PBSS4112PAN,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PBSS4112PAN,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PBSS4112PAN,115?
For technical support, including PBSS4112PAN,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS4112PAN,115 requirements.
6.How does Aetrix verify that PBSS4112PAN,115 is sourced from the original manufacturer or authorized distributors?
All PBSS4112PAN,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS4112PAN,115 meets industry standards.
7.What is the process for return or replacement of PBSS4112PAN,115?
All PBSS4112PAN,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS4112PAN,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PBSS4112PAN,115 part is unused and in its original packaging.
Return procedure for PBSS4112PAN,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PBSS4112PAN,115 Tags
-
MBT3946DW1T1G
onsemi
-
BC846BPDW1T1G
onsemi
-
MBT2222ADW1T1G
onsemi
-
BC847BDW1T1G
onsemi
-
DMMT5401-7-F
Diodes Incorporated
-
DMMT5551-7-F
Diodes Incorporated
-
DMMT3904W-7-F
Diodes Incorporated
-
DMMT3906W-7-F
Diodes Incorporated
-
FMB3904
onsemi
-
FMB2222A
onsemi
-
ULQ2003D1013TR
STMicroelectronics
-
ZXTD4591E6TA
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
