My Inquiry
My Account
Nexperia USA Inc. PBSS4112PANP,115
- Part No.:
- PBSS4112PANP,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays
- Package:
- 6-UFDFN Exposed Pad
- Datasheet:
-
PBSS4112PANP,115.pdf
- Description:
- TRANS NPN/PNP 120V 1A 6HUSON
- Quantity:
- Payment:
- Shipping:
Inventory:7,647
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PBSS4112PANP from Nexperia is a dual NPN/PNP low VCE(sat) BISS transistor in a DFN2020-6 (SOT1118) package, rated for 120 V VCEO, 1 A continuous collector current, and featuring 240 mΩ (NPN) / 440 mΩ (PNP) RCE(sat). It serves as a compact, thermally efficient load switch in bidirectional power control circuits for automotive and portable power management systems.
For engineers reviewing the PBSS4112PANP datasheet, PBSS4112PANP pinout, PBSS4112PANP application, or PBSS4112PANP equivalent, this device offers verified AEC-Q101 qualification, dual-complementary topology in one ultra-thin 2×2 mm package, and design-critical saturation resistance values at 500 mA/50 mA drive - essential for minimizing conduction loss in space-constrained battery-driven switches.
Technical Context
This dual BISS transistor integrates an NPN (TR1) and PNP (TR2) die in a single leadless DFN2020-6 package with shared thermal pad and symmetrical pinout. Each transistor operates independently with separate base-emitter-collector terminals, supporting complementary switching without external pairing.
It employs Breakthrough In Small Signal (BISS) technology to achieve ultra-low saturation voltage - 90 mV typical for NPN at 1 A/100 mA drive and −150 mV typical for PNP - while maintaining high hFE (45 typ. for NPN, 25 typ. for PNP at 1 A), enabling robust current gain under high-load conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 120 V - supports high-side/low-side switching in 48 V automotive and industrial power rails without derating. |
| IC | 1 A continuous - enables direct driving of small motors, LED arrays, or solenoids without external amplification. |
| RCE(sat) (NPN) | 240 mΩ at IC = 500 mA, IB = 50 mA - reduces conduction loss to ≤120 mW, easing thermal design on FR4 PCBs. |
| RCE(sat) (PNP) | 440 mΩ at IC = −500 mA, IB = −50 mA - ensures matched low-loss performance in complementary H-bridge or polarity-reversal circuits. |
| hFE (NPN) | 45 typical at IC = 1 A - provides stable current amplification for reliable gate/base drive in discrete switch applications. |
| AEC-Q101 Qualified | Qualified per Automotive Electronics Council stress test standard - validated for under-hood temperature cycling, humidity, and mechanical shock. |
| Package | DFN2020-6 (SOT1118), 2.0 × 2.0 × 0.65 mm - enables high-density layout with exposed thermal pad for 63 K/W junction-to-ambient resistance on 4-layer PCBs. |
Pinout & Package
DFN2020-6 (SOT1118) is a leadless, thermally enhanced plastic package with six terminals and an exposed copper thermal pad on the bottom surface. Its 2.0 × 2.0 mm footprint and 0.65 mm height support automated reflow assembly and high-power density routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | E1 (emitter TR1) | NPN emitter connection - referenced to system ground in low-side switch configurations. |
| 2 | B1 (base TR1) | NPN base drive input - requires ~100 mA peak for full saturation at 1 A load. |
| 3 | C2 (collector TR2) | PNP collector connection - used as high-side output node in complementary switching topologies. |
| 4 | E2 (emitter TR2) | PNP emitter connection - tied to positive rail in high-side switch implementations. |
| 5 | B2 (base TR2) | PNP base drive input - driven negative relative to E2 for turn-on; logic-level compatible with MCU GPIO via level-shifting. |
| 6 | C1 (collector TR1) | NPN collector connection - primary output node for low-side loads such as motors or charging paths. |
Key Features
| Feature | Design Value |
|---|---|
| Dual NPN/PNP topology | Single-package integration eliminates layout mismatch and timing skew between complementary transistors in H-bridge or polarity-switching circuits. |
| Ultra-low RCE(sat) | 240 mΩ (NPN) and 440 mΩ (PNP) reduce I²R losses by >40% vs. standard BJT alternatives at 500 mA, directly lowering board temperature rise. |
| AEC-Q101 qualification | Validated for automotive under-hood operation (−40 °C to +150 °C junction), including temperature cycling, ESD, and HTOL testing. |
| Thermally optimized DFN2020-6 | Exposed thermal pad achieves 63 K/W Rth(j-a) on 4-layer PCBs - enables 2 W total dissipation without heatsink in compact designs. |
| High hFE at high current | hFE ≥30 (NPN) and ≥15 (PNP) at IC = 1 A ensures stable DC gain across operating range, simplifying base drive circuit design. |
Applications
| Load Switch | Battery Protection |
|---|---|
Use Scenario: Bidirectional load disconnect in 12–48 V automotive ECUs and portable medical devices. IC Role / Device Role / Timing Role: Dual-transistor switch controlling power path direction and isolation during fault events. Use Value: 120 V rating and AEC-Q101 compliance ensure safe interruption of inductive loads in ASIL-B systems without snubber networks. |
Use Scenario: Overvoltage/overcurrent cutoff in Li-ion battery packs for power tools and e-bikes. IC Role / Device Role / Timing Role: Primary protection switch activated by fuel gauge IC or dedicated protector IC. Use Value: Low RCE(sat) minimizes voltage drop across protection FETs, preserving usable battery capacity and reducing thermal stress on pack PCB. |
| Motor Control | Charging Circuit |
Use Scenario: Half-bridge driver for brushed DC motors in automotive HVAC actuators and seat adjusters. IC Role / Device Role / Timing Role: Complementary pair forming high- and low-side legs with matched switching characteristics. Use Value: Matched ton/toff (460 ns / 1005 ns NPN; 260 ns / 560 ns PNP) reduces shoot-through risk and improves PWM efficiency at 20 kHz. |
Use Scenario: USB-C PD or proprietary fast-charging path selection in smartphones and tablets. IC Role / Device Role / Timing Role: Reverse-polarity and overvoltage blocking switch placed between charger IC and battery terminal. Use Value: 7 V VEBO and 120 V VCEO withstand transient surges during hot-plug events while maintaining <100 nA leakage at room temperature. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-complementary BJT switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PBSS4112PAN | NPN/NPN dual only; no PNP element; identical RCE(sat), hFE, and package. | Suitable only for push-pull or parallel NPN configurations - cannot replace PBSS4112PANP in complementary topologies. | Select when dual NPN drive is required (e.g., two independent low-side switches), not for H-bridge or polarity reversal. |
| PBSS5112PAP | PNP/PNP dual only; no NPN element; matches PNP specs but lacks TR1 transistor. | Applicable only where two high-side switches are needed - cannot substitute for PBSS4112PANP's mixed-polarity capability. | Choose for redundant high-side protection or dual-PNP current mirroring; not viable for NPN+PNP co-designs. |
Compared with PBSS4112PANP, PBSS4112PAN and PBSS5112PAP each provide half the functional capability - they deliver identical per-transistor performance but lack the integrated NPN+PNP pairing essential for compact bidirectional switching, requiring two separate packages and increased PCB area.
Availability
PBSS4112PANP is available at Aetrix Electronics and suitable for automotive body electronics, portable power management, and industrial motor control requiring stable component supply and AEC-Q101 assurance.
Supply support for PBSS4112PANP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components and advanced packaging.
PBSS4112PANP belongs to Nexperia's BISS transistor product line, engineered specifically for high-efficiency, space-constrained power switching in automotive and industrial applications where low saturation voltage and thermal performance are critical.
FAQ
What is the maximum allowable junction temperature for PBSS4112PANP?
The absolute maximum junction temperature (Tj) is 150 °C, as specified in Table 5 of the datasheet. Operation above this limit risks permanent degradation of current gain and saturation voltage. Derating curves in Figure 1 show that total power dissipation must be reduced linearly above 25 °C ambient, reaching zero at 150 °C for the 4-layer PCB 70 µm copper configuration.
Can PBSS4112PANP be used in a synchronous rectifier configuration?
No - PBSS4112PANP is a bipolar junction transistor, not a MOSFET, and lacks the body diode and gate-controlled unidirectional conduction required for synchronous rectification. Its base-driven operation introduces significant switching delay (ton = 460 ns, toff = 1005 ns) and cannot match the speed or reverse recovery behavior of dedicated SR controllers.
How does the thermal pad in the DFN2020-6 package connect electrically?
The exposed thermal pad on the underside of the DFN2020-6 package is internally connected to the collector of TR1 (C1, Pin 6) and collector of TR2 (C2, Pin 3), as confirmed by the simplified outline in Table 2 and package drawings. It must be soldered to a dedicated copper pour tied to the corresponding collector net for optimal thermal and electrical performance.
Is PBSS4112PANP pin-compatible with any other Nexperia dual BISS transistors?
Yes - PBSS4112PANP shares identical pinout and footprint with PBSS4112PAN (dual NPN) and PBSS5112PAP (dual PNP), all using the DFN2020-6 (SOT1118) package. This allows layout reuse across designs requiring different transistor polarity combinations, provided base drive and signal routing accommodate the internal device configuration.
PBSS4112PANP,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-UFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 1 NPN, 1 PNP
- Current - Collector (Ic) (Max):
- 1A
- Voltage - Collector Emitter Breakdown (Max):
- 120V
- Vce Saturation (Max) @ Ib, Ic:
- 120mV @ 50mA, 500mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 60 @ 500mA, 2V
- Power - Max:
- 510mW
- Frequency - Transition:
- 120MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-HUSON (2x2)
PBSS4112PANP,115 FAQ
1.How can I place an order for PBSS4112PANP,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PBSS4112PANP,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PBSS4112PANP,115 reliable?
The price and inventory of PBSS4112PANP,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS4112PANP,115 is usually 5 days.
3.What payment methods are accepted for PBSS4112PANP,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS4112PANP,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PBSS4112PANP,115?
PBSS4112PANP,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PBSS4112PANP,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PBSS4112PANP,115?
For technical support, including PBSS4112PANP,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS4112PANP,115 requirements.
6.How does Aetrix verify that PBSS4112PANP,115 is sourced from the original manufacturer or authorized distributors?
All PBSS4112PANP,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS4112PANP,115 meets industry standards.
7.What is the process for return or replacement of PBSS4112PANP,115?
All PBSS4112PANP,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS4112PANP,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PBSS4112PANP,115 part is unused and in its original packaging.
Return procedure for PBSS4112PANP,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PBSS4112PANP,115 Tags
-
MBT3946DW1T1G
onsemi
-
BC846BPDW1T1G
onsemi
-
MBT2222ADW1T1G
onsemi
-
BC847BDW1T1G
onsemi
-
DMMT5401-7-F
Diodes Incorporated
-
DMMT5551-7-F
Diodes Incorporated
-
DMMT3904W-7-F
Diodes Incorporated
-
DMMT3906W-7-F
Diodes Incorporated
-
FMB3904
onsemi
-
FMB2222A
onsemi
-
ULQ2003D1013TR
STMicroelectronics
-
ZXTD4591E6TA
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
