My Inquiry
My Account
Nexperia USA Inc. PBSS4130PANP,115
- Part No.:
- PBSS4130PANP,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays
- Package:
- 6-UFDFN Exposed Pad
- Datasheet:
-
PBSS4130PANP,115.pdf
- Description:
- TRANS NPN/PNP 30V 1A 6HUSON
- Quantity:
- Payment:
- Shipping:
Inventory:4,251
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PBSS4130PANP from Nexperia is a dual NPN/PNP low VCEsat (BISS) transistor in a DFN2020-6 (SOT1118) package, rated for 30 V VCEO, 1 A continuous collector current, and featuring 190 mΩ/250 mΩ RCEsat for NPN/PNP elements respectively. It serves as a compact, thermally efficient load switch in space-constrained battery-powered power management circuits.
For engineers reviewing the PBSS4130PANP datasheet, PBSS4130PANP pinout, PBSS4130PANP application, or PBSS4130PANP equivalent, this device is selected for high-efficiency switching where low conduction loss, AEC-Q101 qualification, and dual complementary topology reduce PCB footprint and thermal overhead in automotive and portable power systems.
Technical Context
This monolithic dual transistor integrates matched NPN and PNP BISS (Breakthrough In Small Signal) structures on a single die, enabling complementary switching without discrete pairing. Each transistor supports pulsed IC up to 2 A and operates with VBEon ≤ 0.9 V (NPN) / ≤ −0.9 V (PNP) at IC = ±0.5 A.
The device uses ultra-thin DFN2020-6 packaging with exposed thermal pad, delivering Rth(j-a) as low as 63 K/W (4-layer PCB, 70 µm copper, collector pad), and achieves fT of 90–165 MHz (NPN) and 65–125 MHz (PNP) under standard bias conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 30 V - Maximum safe collector-emitter voltage for both transistors; defines system rail compatibility up to 24 V nominal supplies. |
| IC (continuous) | 1 A - Continuous DC collector current per transistor; enables direct drive of small motors, LEDs, or power rails without external current boosting. |
| RCEsat (NPN) | 190 mΩ - Low saturation resistance at IC = 1 A, IB = 0.1 A; reduces conduction loss to <190 mW at 1 A. |
| RCEsat (PNP) | 250 mΩ - Saturation resistance at IC = −1 A, IB = −0.1 A; ensures symmetric low-loss bidirectional switching capability. |
| hFE (NPN) | 180–270 - DC current gain at IC = 1 A, VCE = 2 V; supports robust base drive margin with moderate IB = 3.7–5.6 mA. |
| hFE (PNP) | 120–175 - Gain at IC = −1 A, VCE = −2 V; enables stable high-current sinking with predictable base current requirements. |
| AEC-Q101 qualified | Qualified for automotive applications - Validated per stress test standard for discrete semiconductors; supports under-hood and infotainment power stages. |
Pinout & Package
DFN2020-6 (SOT1118) is a 2.0 × 2.0 × 0.65 mm leadless thermal-enhanced plastic package with six terminals and an exposed thermal pad. Its ultra-thin profile and optimized copper layout support high-power density mounting on FR4 or multilayer PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | E1 (emitter, TR1 NPN) | Emitter connection for NPN transistor; referenced to ground in low-side switch configurations. |
| 2 | B1 (base, TR1 NPN) | Base control input for NPN transistor; requires ~100 mA pulsed drive for full saturation at 1 A. |
| 3 | C2 (collector, TR2 PNP) | Collector connection for PNP transistor; tied to positive rail in high-side switch topologies. |
| 4 | E2 (emitter, TR2 PNP) | Emitter connection for PNP transistor; serves as output node in high-side load switching. |
| 5 | B2 (base, TR2 PNP) | Base control input for PNP transistor; driven low (relative to E2) to enable conduction. |
| 6 | C1 (collector, TR1 NPN) | Collector connection for NPN transistor; used as switched output in low-side configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Very low VCEsat | NPN: 150–190 mV; PNP: −160–−250 mV at 1 A - Minimizes I²R losses and self-heating during sustained conduction. |
| High current gain at high IC | hFE ≥ 180 (NPN) and ≥ 120 (PNP) at 1 A - Enables efficient base drive with reduced gate-driver complexity in discrete switch designs. |
| Reduced PCB area requirement | Single DFN2020-6 replaces two discrete SOT23 devices - Cuts board space by >50% and eliminates routing asymmetry between complementary switches. |
| Thermal performance | Rth(j-sp) = 30 K/W - Direct thermal path from junction to solder point enables reliable operation at 1 A continuous with minimal heatsinking. |
| AEC-Q101 qualification | Stress-tested per automotive discrete semiconductor standard - Supports deployment in engine control modules, body electronics, and ADAS power stages. |
Applications
| Load Switching | Battery Protection Circuit |
|---|---|
|
Use Scenario: Controlling power delivery to peripheral modules (e.g., USB-C PD accessories, sensor clusters) in automotive ECUs. IC Role / Device Role / Timing Role: Dual NPN/PNP configuration implements complementary high- and low-side switching for bidirectional load isolation. Use Value: 190/250 mΩ RCEsat limits voltage drop to <250 mV at 1 A, preserving battery headroom and reducing thermal derating needs. |
Use Scenario: Overcurrent and reverse-polarity protection in 12 V battery-fed portable medical devices. IC Role / Device Role / Timing Role: PNP element acts as reverse-voltage blocking switch; NPN enables fast fault detection and latch-off via MCU GPIO. Use Value: AEC-Q101 qualification ensures reliability across temperature extremes (−40 °C to +125 °C ambient), critical for field-deployed equipment. |
| Charging Control | Motor/Fan Driver |
|
Use Scenario: Enabling/disabling charging paths in multi-bank Li-ion battery packs for power tools. IC Role / Device Role / Timing Role: NPN transistor switches charger IC enable line; PNP controls battery discharge FET gate in OR-ing configuration. Use Value: Matched hFE and VCEsat ensure synchronized turn-on/turn-off timing, minimizing shoot-through risk during state transitions. |
Use Scenario: Driving small brushed DC motors (<5 W) in HVAC actuators and automotive seat adjusters. IC Role / Device Role / Timing Role: NPN handles PWM-controlled low-side motor current; PNP provides active freewheeling path during off-time. Use Value: 2 A peak ICM rating supports motor inrush currents; 35–55 ns fall time enables clean PWM operation up to 100 kHz. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual complementary transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PBSS4130PAN | NPN/NPN dual only; no PNP element - lacks complementary switching capability. | Suitable only for push-pull or parallel NPN configurations; cannot replace PBSS4130PANP in high-side PNP roles. | Select when dual NPN current sourcing or paralleling is required, not for complementary load switching. |
| PBSS5130PAP | PNP/PNP dual only; no NPN element - missing low-side switching functionality. | Applicable in dual high-side or current-sinking topologies; cannot substitute for NPN-controlled loads. | Choose for redundant PNP biasing or mirrored sink paths, not for mixed NPN/PNP gate drive or load control. |
Compared with PBSS4130PAN and PBSS5130PAP, PBSS4130PANP uniquely integrates matched NPN and PNP structures in one package-enabling true complementary switching with minimized layout asymmetry, thermal coupling, and timing skew, which neither single-polarity dual nor discrete pairs can match.
Availability
PBSS4130PANP is available at Aetrix Electronics and suitable for automotive body control modules, portable medical device power management, and industrial battery-operated equipment requiring stable component supply and AEC-Q101 compliance.
Supply support for PBSS4130PANP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance logic, analog, and discrete components for automotive, industrial, and consumer markets.
PBSS4130PANP belongs to Nexperia's BISS transistor product line, engineered specifically for high-current, low-loss switching in space- and thermally constrained applications such as automotive power distribution and portable power systems.
FAQ
What is the maximum continuous collector current per transistor in PBSS4130PANP?
The maximum continuous collector current (IC) is 1 A per transistor - specified for both the NPN (TR1) and PNP (TR2) elements under Tamb ≤ 25 °C with appropriate PCB copper area. Derating applies above 25 °C per Fig. 1 power derating curves, reaching zero at 150 °C junction temperature.
How does the DFN2020-6 package affect thermal performance compared to SOT23?
The DFN2020-6 (SOT1118) package delivers significantly lower thermal resistance: Rth(j-a) as low as 63 K/W (vs. >200 K/W for typical SOT23) when mounted on a 4-layer PCB with 70 µm copper and 1 cm² collector pad. This enables 1 A continuous operation without heatsinks where SOT23 would require forced air or derating to ≤300 mA.
Is PBSS4130PANP suitable for PWM motor control at 20 kHz?
Yes - with toff = 365 ns (NPN) and 140 ns (PNP), plus fT up to 165 MHz (NPN) and 125 MHz (PNP), PBSS4130PANP supports clean switching at 20 kHz PWM. Its low storage time (ts = 310 ns NPN, 105 ns PNP) prevents cross-conduction in half-bridge configurations when properly biased.
What is the meaning of "BISS" in PBSS4130PANP's product description?
BISS stands for Breakthrough In Small Signal - Nexperia's proprietary transistor architecture that combines high current gain (hFE > 120 at 1 A) with ultra-low VCEsat and fast switching. Unlike standard small-signal transistors, BISS devices maintain performance at high current densities while retaining SMD scalability and thermal efficiency.
PBSS4130PANP,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-UFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 1 NPN, 1 PNP
- Current - Collector (Ic) (Max):
- 1A
- Voltage - Collector Emitter Breakdown (Max):
- 30V
- Vce Saturation (Max) @ Ib, Ic:
- 100mV @ 50mA, 500mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 210 @ 500mA, 2V
- Power - Max:
- 510mW
- Frequency - Transition:
- 165MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-HUSON (2x2)
PBSS4130PANP,115 FAQ
1.How can I place an order for PBSS4130PANP,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PBSS4130PANP,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PBSS4130PANP,115 reliable?
The price and inventory of PBSS4130PANP,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS4130PANP,115 is usually 5 days.
3.What payment methods are accepted for PBSS4130PANP,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS4130PANP,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PBSS4130PANP,115?
PBSS4130PANP,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PBSS4130PANP,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PBSS4130PANP,115?
For technical support, including PBSS4130PANP,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS4130PANP,115 requirements.
6.How does Aetrix verify that PBSS4130PANP,115 is sourced from the original manufacturer or authorized distributors?
All PBSS4130PANP,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS4130PANP,115 meets industry standards.
7.What is the process for return or replacement of PBSS4130PANP,115?
All PBSS4130PANP,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS4130PANP,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PBSS4130PANP,115 part is unused and in its original packaging.
Return procedure for PBSS4130PANP,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PBSS4130PANP,115 Tags
-
MBT3946DW1T1G
onsemi
-
BC846BPDW1T1G
onsemi
-
MBT2222ADW1T1G
onsemi
-
BC847BDW1T1G
onsemi
-
DMMT5401-7-F
Diodes Incorporated
-
DMMT5551-7-F
Diodes Incorporated
-
DMMT3904W-7-F
Diodes Incorporated
-
DMMT3906W-7-F
Diodes Incorporated
-
FMB3904
onsemi
-
FMB2222A
onsemi
-
ULQ2003D1013TR
STMicroelectronics
-
ZXTD4591E6TA
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
