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Nexperia USA Inc. PBSS4140DPN,115
- Part No.:
- PBSS4140DPN,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays
- Package:
- SC-74, SOT-457
- Datasheet:
-
PBSS4140DPN,115.pdf
- Description:
- TRANS NPN/PNP 40V 1A 6-TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:67,544
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Product details
Overview
PBSS4140DPN from Nexperia is a dual NPN/PNP low VCE(sat) transistor pair in a single TSOP6 (SOT457) package, rated for 40 V VCEO, 1 A continuous collector current per transistor, and 260–500 mΩ RCE(sat) at 500 mA/50 mA drive. It serves as a compact, thermally efficient switching solution in space-constrained battery-powered devices such as mobile phones and handheld video cameras.
For engineers reviewing the PBSS4140DPN datasheet, PBSS4140DPN pinout, PBSS4140DPN application, or PBSS4140DPN equivalent, this device is selected for high-current, low-loss bipolar switching where PCB area reduction and AEC-Q101 qualification are critical - especially in supply line switching, LCD backlight control, and muting circuits requiring matched complementary gain and saturation behavior.
Technical Context
The PBSS4140DPN integrates two discrete transistors - TR1 (NPN) and TR2 (PNP) - on one die with independent emitter, base, and collector terminals. Each transistor supports 40 V VCEO, 1 A IC, and achieves VCE(sat) ≤ 500 mV at 1 A/100 mA drive, with hFE of 200 (NPN) and 160 (PNP) at 1 A.
Its thermal resistance Rth(j-a) is 208 K/W when mounted on FR4 with 1 cm² collector pad, and total device power dissipation is rated at 600 mW. The AEC-Q101 qualification confirms suitability for automotive ambient conditions (−65 °C to +150 °C).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 40 V - Maximum safe collector-emitter voltage for both NPN and PNP transistors under open-base conditions. |
| IC (continuous) | 1 A per transistor - Sustained switching current capability without derating at Tamb ≤ 25 °C. |
| RCE(sat) (TR1) | 260–500 mΩ - Low on-resistance at 500 mA/50 mA drive enables <0.25 V drop and reduced conduction loss. |
| RCE(sat) (TR2) | 300–500 mΩ - Complementary low-saturation resistance for PNP side ensures matched performance in push-pull or H-bridge driver stages. |
| hFE (TR1) | 200 min at IC = 1 A - High DC current gain reduces required base drive current and eases microcontroller GPIO interfacing. |
| hFE (TR2) | 160 min at IC = −1 A - Sufficient gain for PNP-side control without excessive base current demand in high-side switching. |
| fT | 150 MHz - Transition frequency supports fast switching up to ~10–20 MHz operation with adequate gain margin. |
Pinout & Package
Package: TSOP6 (SOT457), surface-mount plastic package with 6 leads, 1.7 mm × 2.5 mm footprint, 0.65 mm pitch, and exposed thermal pad-compatible layout per Figure 12.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter of TR1 (NPN) | Low-impedance return path for NPN emitter current; tied to ground or low-side reference in switching configurations. |
| 2 | Base of TR1 (NPN) | Control input for NPN transistor; requires ~100 mA base current for full saturation at 1 A collector load. |
| 3 | Collector of TR2 (PNP) | High-side output node for PNP; connects to positive rail in high-side switch or complementary driver topologies. |
| 4 | Emitter of TR2 (PNP) | Common high-side reference; typically connected to VCC or battery positive in supply-switching applications. |
| 5 | Base of TR2 (PNP) | Inverted control input for PNP; driven low (or via pull-down) to enable conduction; compatible with logic-level gate drivers. |
| 6 | Collector of TR1 (NPN) | Low-side output node for NPN; used for grounding loads, sinking backlight LEDs, or driving downstream logic inputs. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability across −65 °C to +150 °C junction temperature range. |
| 600 mW total Ptot | Enables dual-transistor operation within a single 6-pin footprint without exceeding thermal limits on standard FR4 PCBs. |
| Replaces two SOT23 transistors | Reduces PCB area by >50% versus discrete NPN+PNP SOT23 implementation, lowering assembly cost and routing complexity. |
| Low VCE(sat) (≤500 mV) | Minimizes power loss and self-heating during high-current switching, improving efficiency in battery-driven equipment. |
| Matched RCE(sat) and hFE | Ensures balanced turn-on behavior between NPN and PNP sides in complementary circuits like H-bridges or level shifters. |
Applications
| Supply Line Switching | LCD Backlight Control |
|---|---|
|
Use Scenario: Enabling/disabling power rails to peripherals or subsystems in portable electronics using a single control signal. IC Role / Device Role / Timing Role: Dual-transistor pair acts as complementary high-side (PNP) and low-side (NPN) switch to isolate VCC or ground paths. Use Value: Eliminates need for external level-shifting circuitry; 40 V rating supports 3.3 V to 24 V rail management with minimal dropout. |
Use Scenario: Driving LED strings in mobile phone or tablet displays with PWM dimming and overcurrent protection. IC Role / Device Role / Timing Role: NPN transistor sinks LED current while PNP provides bias or auxiliary control; both operate in linear or saturated mode. Use Value: Low RCE(sat) keeps forward voltage drop below 0.5 V at 500 mA, preserving battery life and reducing thermal load on display module. |
| Battery-Driven Equipment | General Purpose Muting |
|
Use Scenario: Power management in hand-held devices including video cameras, Bluetooth headsets, and medical sensors. IC Role / Device Role / Timing Role: Acts as load switch for battery-connected modules, enabling rapid on/off cycling with minimal leakage (ICEO ≤ 100 nA). Use Value: AEC-Q101 qualification ensures robustness against thermal cycling and vibration; 150 °C max Tj supports sealed enclosure designs. |
Use Scenario: Audio signal path muting in consumer audio ICs or analog front-ends to suppress pop/click noise during power-up/down. IC Role / Device Role / Timing Role: NPN/PNP pair forms a bidirectional analog switch across differential or single-ended audio lines. Use Value: Matched hFE and low VCE(sat) ensure symmetrical on-resistance (<500 mΩ) and minimal THD in audio paths up to 20 kHz. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary low-VCE(sat) transistor pair applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NSS40501MR6T1G | Same TSOP6 package, 40 V VCEO, but lower IC (500 mA) and higher RCE(sat) (typ. 650 mΩ); no AEC-Q101 qualification. | Not suitable for 1 A load switching; limited to lower-power muting or signal routing. | Select only if AEC-Q101 compliance and 1 A current handling are not required. |
| Diodes Incorporated DMMT3904-7-F | Discrete NPN-only SOT23; no integrated PNP; requires separate PNP part (e.g., DMMT3906-7-F) and larger PCB area. | Increases BOM count and assembly cost; lacks thermal coupling benefit of monolithic pair. | Choose only when design flexibility demands independent transistor biasing or different gain/saturation trade-offs. |
Compared with NSS40501MR6T1G and DMMT3904-7-F, PBSS4140DPN delivers higher current capability, lower saturation resistance, and automotive-grade reliability in half the PCB area - making it optimal for space- and performance-critical battery-powered systems.
Availability
PBSS4140DPN is available at Aetrix Electronics and suitable for supply line switching, LCD backlight control, and battery-driven equipment requiring stable component supply, AEC-Q101 qualification, and compact dual-transistor integration.
Supply support for PBSS4140DPN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors, with leadership in logic, discretes, and MOSFETs for automotive, industrial, and consumer markets.
PBSS4140DPN belongs to Nexperia's low VCE(sat) transistor family, engineered specifically for energy-efficient, space-constrained switching in portable and automotive electronics where thermal performance and footprint reduction are primary design goals.
FAQ
What is the maximum junction temperature and how does it affect thermal design?
The PBSS4140DPN has a maximum junction temperature (Tj) of 150 °C. Its thermal resistance Rth(j-a) is 208 K/W on standard FR4 with a 1 cm² collector pad. To maintain Tj ≤ 150 °C at 25 °C ambient, total power dissipation must stay below 600 mW - matching its rated Ptot. Derating is required above 25 °C ambient per the thermal curve in the datasheet.
Can PBSS4140DPN be used in linear amplifier applications?
No - PBSS4140DPN is optimized for switching operation, not linear amplification. Its hFE variation across IC and temperature, lack of guaranteed small-signal parameters (e.g., fT stability, noise figure), and absence of linear-mode SOA curves indicate it is intended for saturated or cutoff operation only.
How does the pin configuration support complementary switching topologies?
The TSOP6 pinout assigns E1/B1/C1 to the NPN and E2/B2/C2 to the PNP with interleaved terminals (E1-B1-C2-E2-B2-C1), enabling direct connection to common control signals and shared heat paths. This layout simplifies PCB routing for half-bridge or push-pull drivers without cross-layer vias or long traces.
Is the marking code 'M2' sufficient for full traceability and authenticity verification?
Yes - 'M2' is the official Nexperia marking for PBSS4140DPN per Table 4 of the datasheet. When combined with the TSOP6 package outline and date code (e.g., YYWW format on reel label), it enables full traceability to Nexperia's manufacturing lot and wafer batch, supporting counterfeit detection and quality audits.
PBSS4140DPN,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-74, SOT-457
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 1 NPN, 1 PNP
- Current - Collector (Ic) (Max):
- 1A
- Voltage - Collector Emitter Breakdown (Max):
- 40V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 100mA, 1A
- Current - Collector Cutoff (Max):
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 300 @ 500mA, 5V
- Power - Max:
- 600mW
- Frequency - Transition:
- 150MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
PBSS4140DPN,115 FAQ
1.How can I place an order for PBSS4140DPN,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PBSS4140DPN,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PBSS4140DPN,115 reliable?
The price and inventory of PBSS4140DPN,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS4140DPN,115 is usually 5 days.
3.What payment methods are accepted for PBSS4140DPN,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS4140DPN,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PBSS4140DPN,115?
PBSS4140DPN,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PBSS4140DPN,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PBSS4140DPN,115?
For technical support, including PBSS4140DPN,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS4140DPN,115 requirements.
6.How does Aetrix verify that PBSS4140DPN,115 is sourced from the original manufacturer or authorized distributors?
All PBSS4140DPN,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS4140DPN,115 meets industry standards.
7.What is the process for return or replacement of PBSS4140DPN,115?
All PBSS4140DPN,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS4140DPN,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PBSS4140DPN,115 part is unused and in its original packaging.
Return procedure for PBSS4140DPN,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PBSS4140DPN,115 Tags
-
MBT3946DW1T1G
onsemi
-
BC846BPDW1T1G
onsemi
-
MBT2222ADW1T1G
onsemi
-
BC847BDW1T1G
onsemi
-
DMMT5401-7-F
Diodes Incorporated
-
DMMT5551-7-F
Diodes Incorporated
-
DMMT3904W-7-F
Diodes Incorporated
-
DMMT3906W-7-F
Diodes Incorporated
-
FMB3904
onsemi
-
FMB2222A
onsemi
-
ULQ2003D1013TR
STMicroelectronics
-
ZXTD4591E6TA
Diodes Incorporated
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