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Nexperia USA Inc. PBSS4140DPN/DG/B2,115
- Part No.:
- PBSS4140DPN/DG/B2,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
PBSS4140DPN/DG/B2,115.pdf
- Description:
- TRANS NPN/PNP 40V 1A 6-TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:3,217
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Product details
Overview
PBSS4140DPN/DG/B2,115 from Nexperia is a dual NPN/PNP low VCE(sat) transistor pair in a single TSOP6 (SOT457) package, rated for 40 V VCEO, 1 A continuous collector current per transistor, and 260–300 mΩ typical RCE(sat) at 500 mA drive. It serves as a compact, thermally efficient switching solution in space-constrained battery-powered systems such as mobile phone power management and LCD backlight control.
For engineers reviewing the PBSS4140DPN/DG/B2,115 datasheet, PBSS4140DPN/DG/B2,115 pinout, PBSS4140DPN/DG/B2,115 application, or PBSS4140DPN/DG/B2,115 equivalent, this device is selected for high-current, low-loss complementary switching where PCB area reduction and AEC-Q101 automotive qualification are critical design requirements.
Technical Context
The PBSS4140DPN/DG/B2,115 integrates matched NPN (TR1) and PNP (TR2) transistors with independent emitter, base, and collector terminals-enabling true complementary operation without shared nodes. Each transistor features optimized doping and geometry to achieve low saturation resistance and high DC current gain (hFE ≥ 200 for NPN, ≥ 160 for PNP at 1 A).
Its thermal design supports 600 mW total device power dissipation on FR4 PCBs with defined copper pad layout, and junction-to-ambient thermal resistance of 208 K/W in free air. The device operates across −65 °C to +150 °C ambient, with AEC-Q101 qualification confirming robustness for automotive-grade temperature cycling and humidity exposure.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 40 V - Maximum safe collector-emitter voltage before breakdown; enables use in 24 V automotive and 12 V industrial supply rails. |
| IC (continuous) | 1 A per transistor - Supports high-side and low-side load switching up to 1 A without external heatsinking under typical PCB conditions. |
| RCE(sat) (typ.) | 260 mΩ (NPN), 300 mΩ (PNP) at 500 mA/50 mA drive - Reduces conduction loss to ≤130 mW per transistor, lowering self-heating and improving efficiency. |
| hFE | 200 (NPN), 160 (PNP) at 1 A - Ensures reliable saturation with modest base drive (e.g., 5–10 mA MCU GPIO), simplifying driver circuitry. |
| fT | 150 MHz - Sufficient for PWM switching up to ~1–2 MHz in DC-DC converters or LED dimming applications. |
| AEC-Q101 qualified | Qualified per Stress Test Qualification for Discrete Semiconductors - Validated for automotive under-hood and infotainment environments. |
Pinout & Package
Package: TSOP6 (SOT457), surface-mount plastic package with 6 leads, 1.7 mm × 2.5 mm footprint, 0.95 mm height, and exposed thermal pad-compatible layout per Figure 12.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter of TR1 (NPN) | Low-impedance current sink node for NPN transistor; connects to ground or low-side load return path. |
| 2 | Base of TR1 (NPN) | Control input for NPN switch; requires ~50 mA base current to saturate at 500 mA collector load. |
| 3 | Collector of TR2 (PNP) | High-side current source node for PNP transistor; connects to positive supply rail in high-side switch configurations. |
| 4 | Emitter of TR2 (PNP) | Current source output node for PNP; ties to load anode in high-side driving or supply line switching. |
| 5 | Base of TR2 (PNP) | Inverted control input for PNP switch; driven low (relative to emitter) to turn on; compatible with open-drain or level-shifted logic. |
| 6 | Collector of TR1 (NPN) | Low-side current sink output node for NPN; connects to load cathode or ground-referenced loads in complementary pairs. |
Key Features
| Feature | Design Value |
|---|---|
| 600 mW total power dissipation | Enables dual-transistor operation within a single 2.5 mm × 1.7 mm footprint without derating at 25 °C ambient. |
| Low RCE(sat) (260–300 mΩ typ.) | Reduces I²R losses by >40% versus standard small-signal transistors, extending battery life in portable devices. |
| Replaces two SOT23 devices | Eliminates two separate placements and routing paths, cutting pick-and-place time and PCB real estate by ~50%. |
| AEC-Q101 qualified | Validated for automotive applications including body control modules and display power supplies without additional qualification effort. |
Applications
| Mobile Phone Power Switching | LCD Backlight Control |
|---|---|
|
Use Scenario: Controlling power delivery to RF power amplifiers and camera flash circuits during burst-mode operation. IC Role / Device Role / Timing Role: Dual NPN/PNP pair provides synchronized high-side (PNP) and low-side (NPN) switching for bidirectional current control and reverse-polarity protection. Use Value: Low RCE(sat) minimizes voltage drop across switching path, preserving battery voltage margin during peak 1 A loads. |
Use Scenario: Driving white LED strings in smartphone and tablet displays using PWM dimming at 1–10 kHz. IC Role / Device Role / Timing Role: NPN transistor switches LED cathodes to ground; PNP transistor regulates anode current from boost converter output. Use Value: Matched hFE and VCE(sat) ensure consistent brightness across LED channels with minimal thermal drift. |
| Automotive Body Control Module | Handheld Medical Device Power Path |
|
Use Scenario: Managing 12 V supply lines to interior lighting, window motors, and sensor interfaces in BCM subassemblies. IC Role / Device Role / Timing Role: PNP handles high-side load enable; NPN provides diagnostic feedback via emitter sensing or fault detection. Use Value: AEC-Q101 qualification ensures reliability over 15-year vehicle lifetime with no field failures due to thermal cycling or humidity ingress. |
Use Scenario: Isolating and sequencing power domains (e.g., analog front-end, Bluetooth radio, display) in portable ECG monitors and pulse oximeters. IC Role / Device Role / Timing Role: Complementary pair implements soft-start and load-disconnect functions with controlled slew rate via base resistor networks. Use Value: 40 V VCEO headroom accommodates battery overvoltage events (e.g., 3S Li-ion charging at 12.6 V), preventing latch-up or breakdown. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary low-VCE(sat) transistor pair applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3026LSD-13 | Single N-channel MOSFET (30 V, 4.2 A); no integrated PNP counterpart - requires external P-channel device for complementarity. | Not suitable for direct replacement in dual-transistor complementary topologies without redesign. | Select only when discrete MOSFET optimization (e.g., <100 mΩ RDS(on)) outweighs board area and BOM count penalties. |
| BC846BPDW1T3G | Complementary NPN/PNP pair in SOT-363; lower VCEO (65 V), higher RCE(sat) (600–800 mΩ), unqualified for automotive. | Limited to non-automotive consumer applications with <500 mA load current and <85 °C ambient. | Choose for cost-sensitive, non-automotive designs where thermal performance and AEC-Q101 are not required. |
Compared with DMN3026LSD-13 and BC846BPDW1T3G, the PBSS4140DPN/DG/B2,115 uniquely delivers automotive-qualified, matched NPN/PNP switching in one ultra-compact package with lowest RCE(sat) and highest continuous current capability among SOT457-comparable devices.
Availability
PBSS4140DPN/DG/B2,115 is available at Aetrix Electronics and suitable for mobile phone power switching, LCD backlight control, automotive body control modules, and handheld medical device power path applications requiring stable component supply and long-term manufacturability.
Supply support for PBSS4140DPN/DG/B2,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET devices with focus on efficiency, miniaturization, and automotive-grade quality.
The PBSS4140DPN/DG/B2,115 belongs to Nexperia's low VCE(sat) transistor family, engineered specifically for space- and power-constrained switching applications in portable electronics and automotive subsystems.
FAQ
What is the maximum continuous collector current rating per transistor?
The PBSS4140DPN/DG/B2,115 supports 1 A continuous collector current per transistor (IC) under Tamb ≤ 25 °C with specified PCB copper area. Derating applies above 25 °C ambient, reaching zero current at 150 °C junction temperature per the thermal resistance curve in Table 6.
How is the pin configuration arranged for complementary operation?
Pins 1–2–6 form the NPN transistor (E1–B1–C1); pins 3–4–5 form the PNP transistor (C2–E2–B2). This arrangement allows independent high-side (PNP) and low-side (NPN) control without shared emitters or collectors, enabling true complementary switching in H-bridge or supply-isolation topologies.
Does the device require external base resistors for MCU GPIO drive?
Yes - for reliable saturation at 1 A IC, the NPN requires ~100 mA IB (10:1 ratio), and the PNP requires ~50 mA IB. Standard 3.3 V or 5 V MCU GPIOs cannot source/sink this directly; series base resistors (e.g., 33 Ω for NPN, 68 Ω for PNP with 5 V drive) are mandatory to limit current and ensure full turn-on.
Is the marking code 'M2' unique to this part number?
Yes - per Table 4 of the datasheet, 'M2' is the official marking code for PBSS4140DPN/DG/B2,115 on the top surface of the TSOP6 package. This code is used for visual identification and traceability; it does not encode date code or lot information, which appear separately in the reel label.
PBSS4140DPN/DG/B2,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Bulk
- Product Status:
- Active
- Transistor Type:
- 1 NPN, 1 PNP
- Current - Collector (Ic) (Max):
- 1A
- Voltage - Collector Emitter Breakdown (Max):
- 40V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 100mA, 1A
- Current - Collector Cutoff (Max):
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 300 @ 500mA, 5V / 300 @ 100mA, 5V
- Power - Max:
- 370mW
- Frequency - Transition:
- 150MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
PBSS4140DPN/DG/B2,115 FAQ
1.How can I place an order for PBSS4140DPN/DG/B2,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PBSS4140DPN/DG/B2,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PBSS4140DPN/DG/B2,115 reliable?
The price and inventory of PBSS4140DPN/DG/B2,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS4140DPN/DG/B2,115 is usually 5 days.
3.What payment methods are accepted for PBSS4140DPN/DG/B2,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS4140DPN/DG/B2,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PBSS4140DPN/DG/B2,115?
PBSS4140DPN/DG/B2,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PBSS4140DPN/DG/B2,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PBSS4140DPN/DG/B2,115?
For technical support, including PBSS4140DPN/DG/B2,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS4140DPN/DG/B2,115 requirements.
6.How does Aetrix verify that PBSS4140DPN/DG/B2,115 is sourced from the original manufacturer or authorized distributors?
All PBSS4140DPN/DG/B2,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS4140DPN/DG/B2,115 meets industry standards.
7.What is the process for return or replacement of PBSS4140DPN/DG/B2,115?
All PBSS4140DPN/DG/B2,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS4140DPN/DG/B2,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PBSS4140DPN/DG/B2,115 part is unused and in its original packaging.
Return procedure for PBSS4140DPN/DG/B2,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PBSS4140DPN/DG/B2,115 Tags
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MBT3946DW1T1G
onsemi
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BC846BPDW1T1G
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MBT2222ADW1T1G
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BC847BDW1T1G
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DMMT5401-7-F
Diodes Incorporated
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DMMT5551-7-F
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DMMT3904W-7-F
Diodes Incorporated
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DMMT3906W-7-F
Diodes Incorporated
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FMB3904
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FMB2222A
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ULQ2003D1013TR
STMicroelectronics
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ZXTD4591E6TA
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