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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar Transistor Arrays

Nexperia USA Inc. PBSS4140DPNF

Name: PBSS4140DPNF
Brand: Nexperia USA Inc.
SKU: PBSS4140DPNF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PBSS4140DPNF

Manufacturer:: Nexperia USA Inc.

Category:: Bipolar Transistor Arrays

Package:: SC-74, SOT-457

Datasheet:: PBSS4140DPNF.pdf

Description:: TRANS NPN/PNP 40V 1A 6-TSOP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PBSS4140DPN from Nexperia is a dual NPN/PNP low V_CEsat transistor pair in a single TSOP6 (SOT457) package, rated for 40 V V_CEO, 1 A continuous collector current per transistor, and 260–500 mΩ R_CEsat at 500 mA/50 mA drive. It serves as a compact, thermally efficient switching solution in space-constrained battery-powered devices such as mobile phones and handheld video cameras.

For engineers reviewing the PBSS4140DPN datasheet, PBSS4140DPN pinout, PBSS4140DPN application, or PBSS4140DPN equivalent, key selection criteria include its AEC-Q101 qualification, matched NPN/PNP pairing in one footprint, low saturation resistance enabling reduced conduction loss, and compatibility with standard reflow soldering profiles for TSOP6 packages.

Technical Context

This device integrates two complementary low-saturation transistors-TR1 (NPN) and TR2 (PNP)-in a monolithic die configuration within a single SC-74 plastic package. Each transistor supports 40 V V_CEO, 1 A I_C, and delivers h_FE of 200 (NPN) and 160 (PNP) at 1 A, with f_T ≥ 150 MHz for both polarities under specified bias conditions.

Thermal performance is defined by R_th(j-a) = 208 K/W on FR4 PCB with 1 cm² collector pad, and total device power dissipation is rated at 600 mW. The dual-transistor layout enables complementary switching without inter-device timing skew, supporting precise push-pull or H-bridge control in supply line and backlight circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	40 V - Maximum safe collector-emitter voltage for both NPN and PNP transistors under open-base condition.
I_C	1 A - Continuous collector current rating per transistor, enabling direct drive of moderate-power loads like LED strings or logic-level switches.
R_CEsat (TR1)	260–500 mΩ - Low on-resistance at 500 mA/50 mA drive, reducing conduction loss and self-heating in high-duty-cycle switching.
R_CEsat (TR2)	300–500 mΩ - Matched low-saturation behavior for PNP side, ensuring symmetrical turn-on characteristics in complementary configurations.
h_FE (TR1)	200 min at I_C = 1 A - Sufficient DC current gain to support base drive with modest current sources (e.g., microcontroller GPIO).
h_FE (TR2)	160 min at I_C = −1 A - Verified gain for PNP side under full load, enabling predictable base resistor sizing in level-shifting or reverse-polarity applications.
AEC-Q101	Qualified - Meets automotive-grade stress test requirements for discrete semiconductors, supporting use in infotainment and body electronics.

Pinout & Package

Package: TSOP6 (SOT457), surface-mount plastic package with 6 leads, 3.0 mm × 1.7 mm footprint, 0.65 mm pitch, and exposed thermal pad design optimized for FR4 PCBs with single-sided copper.

Pin	Circuit Role	Design Meaning
1	Emitter of TR1 (NPN)	Low-impedance emitter connection for NPN transistor; tied to ground or low-side return path in switching topologies.
2	Base of TR1 (NPN)	Control input for NPN switch; requires ~100 mA base current for full saturation at 1 A collector load.
3	Collector of TR2 (PNP)	High-side output node for PNP transistor; connects to positive rail or load supply in high-side switching applications.
4	Emitter of TR2 (PNP)	Common emitter terminal for PNP; typically connected to V_CC or battery positive in supply-line switching circuits.
5	Base of TR2 (PNP)	Inverted control input for PNP switch; driven low to enable conduction, compatible with open-drain or logic-level shifters.
6	Collector of TR1 (NPN)	Low-side output node for NPN transistor; interfaces directly with load cathodes or ground-referenced circuitry.

Key Features

Feature	Design Value
Dual NPN/PNP integration	Replaces two discrete SOT23 transistors in same PCB area, eliminating layout mismatch and reducing assembly cost.
Low R_CEsat	260–500 mΩ per transistor at 500 mA ensures <500 mV V_CEsat, minimizing power loss and thermal rise in portable equipment.
AEC-Q101 qualification	Validated for automotive ambient temperature range (−65 °C to +150 °C) and reliability stress tests including HTGB and HTRB.
Thermal efficiency	600 mW total device power dissipation with 208 K/W junction-to-ambient resistance enables operation without heatsinking in most consumer applications.
TSOP6 footprint compatibility	Standardized 0.65 mm pitch and 3.0 × 1.7 mm outline aligns with automated pick-and-place and reflow processes used in high-volume manufacturing.

Applications

General Purpose Switching

LCD Backlighting

Use Scenario: On/off control of resistive or inductive loads in consumer electronics, such as power rails for sensors or peripheral ICs.

IC Role / Device Role: Dual-transistor pair provides complementary high-side (PNP) and low-side (NPN) switching in a single footprint.

Use Value: Eliminates need for separate NPN and PNP devices, reducing BOM count and PCB real estate while maintaining matched thermal behavior.

Use Scenario: Current regulation and dimming control for white LED arrays in portable displays.

IC Role / Device Role: NPN transistor drives LED cathode to ground; PNP transistor controls anode voltage or enables/disables entire string.

Use Value: Low R_CEsat minimizes voltage drop across transistors, preserving headroom for LED forward voltage and improving dimming linearity.

Supply Line Switching

Battery-Driven Equipment

Use Scenario: Hot-swap or load-switching in USB-powered accessories and power management subsystems.

IC Role / Device Role: PNP transistor acts as high-side switch for V_IN rail; NPN provides gate control or status feedback path.

Use Value: 40 V rating and 1 A current capability support 5–12 V supply domains; low V_CEsat reduces insertion loss and self-heating during sustained load.

Use Scenario: Power path management in smartphones, action cameras, and handheld medical devices.

IC Role / Device Role: Integrated NPN/PNP pair implements battery charge/discharge isolation, reverse polarity protection, or system reset sequencing.

Use Value: AEC-Q101 qualification and −65 °C to +150 °C operating range ensure robustness across extended temperature cycles in mobile environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual low-V_CEsat transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3026LSD-13	Single N-channel MOSFET pair (dual-N), 30 V, 3.2 A, R_DS(on) = 32 mΩ @ 4.5 V - no PNP complement.	Requires external PNP or level shifter for high-side control; unsuitable for true complementary switching without added components.	Select only when high-current, low-R_DS(on) N-channel switching dominates and PNP functionality is not required.
BC847BDW1T1G	Complementary NPN/PNP pair in SOT363, 45 V, 100 mA I_C, h_FE = 200–450 - lower current rating and higher V_CEsat.	Not suitable for 1 A loads; limited to signal-level or low-power biasing applications.	Choose for low-current bias networks or where board space allows larger SOT363 footprint and thermal derating is acceptable.

Compared with DMN3026LSD-13 and BC847BDW1T1G, PBSS4140DPN uniquely delivers matched 1 A NPN/PNP switching in one TSOP6 package with sub-500 mΩ R_CEsat, making it optimal for compact, high-efficiency load switching where complementary bipolar drive and automotive reliability are required.

Availability

PBSS4140DPN is available at Aetrix Electronics and suitable for LCD backlighting, supply line switching circuits, and battery-driven equipment requiring stable component supply, automotive-grade qualification, and minimal PCB footprint.

Supply support for PBSS4140DPN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors for automotive, industrial, and consumer markets.

PBSS4140DPN belongs to Nexperia's low V_CEsat transistor family, engineered specifically for energy-efficient switching in space-constrained, thermally sensitive applications such as portable electronics and automotive body control modules.

FAQ

What is the maximum continuous collector current per transistor in PBSS4140DPN?

The PBSS4140DPN supports 1 A continuous collector current for both the NPN (TR1) and PNP (TR2) transistors under T_amb ≤ 25 °C with proper PCB thermal relief. At elevated ambient temperatures or without copper pour, derating applies per the datasheet's thermal curves, with peak pulse current rated at 2 A for ≤1 ms.

Is PBSS4140DPN suitable for automotive applications?

Yes - PBSS4140DPN is AEC-Q101 qualified for discrete semiconductors, tested across temperature cycling, humidity, and high-temperature reverse bias. Its −65 °C to +150 °C operating range and 150 °C max junction temperature meet requirements for under-hood and cabin electronics, excluding safety-critical systems.

How does the TSOP6 (SOT457) package compare to SOT23 for thermal performance?

The TSOP6 package offers 600 mW total power dissipation versus ~350 mW for typical SOT23 devices, due to larger copper exposure and optimized thermal pad layout. Its R_th(j-a) of 208 K/W on FR4 is ~30% lower than standard SOT23, enabling higher sustained current without forced cooling in compact designs.

Can PBSS4140DPN replace two separate SOT23 transistors in existing designs?

Yes - the pinout and electrical characteristics are designed for drop-in replacement of two discrete low-V_CEsat transistors (e.g., PBSS4041PAN + PBSS5140PAN), occupying identical PCB area. Layout adaptation is minimal: verify trace widths for 1 A routing and confirm base drive compatibility with the shared 6-pin footprint.

PBSS4140DPNF Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-74, SOT-457

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: 1 NPN, 1 PNP

Current - Collector (Ic) (Max):: 1A

Voltage - Collector Emitter Breakdown (Max):: 40V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 100mA, 1A

Current - Collector Cutoff (Max):: 100nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 300 @ 500mA, 5V / 300 @ 100mA, 5V

Power - Max:: 370mW

Frequency - Transition:: 150MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q100

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

PBSS4140DPNF FAQ

1.How can I place an order for PBSS4140DPNF through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS4140DPNF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS4140DPNF reliable?

The price and inventory of PBSS4140DPNF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS4140DPNF is usually 5 days.

3.What payment methods are accepted for PBSS4140DPNF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS4140DPNF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS4140DPNF?

PBSS4140DPNF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS4140DPNF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS4140DPNF?

For technical support, including PBSS4140DPNF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS4140DPNF requirements.

6.How does Aetrix verify that PBSS4140DPNF is sourced from the original manufacturer or authorized distributors?

All PBSS4140DPNF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS4140DPNF meets industry standards.

7.What is the process for return or replacement of PBSS4140DPNF?

All PBSS4140DPNF units undergo pre-shipment inspection (PSI). If there is an issue with PBSS4140DPNF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS4140DPNF part is unused and in its original packaging.

Return procedure for PBSS4140DPNF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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