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Nexperia USA Inc. PBSS4160PAN,115
- Part No.:
- PBSS4160PAN,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays
- Package:
- 6-UFDFN Exposed Pad
- Datasheet:
-
PBSS4160PAN,115.pdf
- Description:
- TRANS 2NPN 60V 1A 6HUSON
- Quantity:
- Payment:
- Shipping:
Inventory:1,640
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Product details
Overview
PBSS4160PAN from Nexperia is a dual NPN low VCEsat (BISS) transistor in DFN2020-6 (SOT1118) package, designed for high-efficiency load switching in space-constrained applications. It delivers 60 V VCEO, 1 A continuous IC, and ultra-low 185 mV typical VCEsat at 1 A/100 mA drive - enabling reduced conduction loss in battery-powered power management and motor control circuits.
For engineers reviewing the PBSS4160PAN datasheet, PBSS4160PAN pinout, PBSS4160PAN application, or PBSS4160PAN equivalent, key selection criteria include verified dual-NPN topology, AEC-Q101 qualification for automotive-grade reliability, thermal resistance as low as 86 K/W (4-layer PCB, 70 µm Cu), and confirmed RCEsat of 240 mΩ at 0.5 A - critical for thermally sensitive DC-DC and charging circuit designs.
Technical Context
This dual NPN BISS transistor integrates two matched high-gain, low-saturation transistors in a single leadless DFN2020-6 package, sharing no internal connection between devices - enabling independent control of two switching paths. Its architecture supports parallel operation or complementary stage driving with minimal PCB footprint.
It operates with VBEsat ≤ 1.1 V at 1 A/100 mA, hFE = 70–110 at 1 A, and exhibits fast switching (ton = 105 ns, toff = 540 ns) under standard 10 V/500 mA test conditions - optimized for PWM-driven load switches and synchronous rectifier auxiliary stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 60 V - maximum blocking voltage per transistor; supports 24 V and 48 V industrial bus systems with margin. |
| IC (continuous) | 1 A - rated collector current per transistor; enables direct drive of small motors, LEDs, or solenoids without external amplification. |
| VCEsat @ 1 A/100 mA | 175–220 mV - ultra-low saturation voltage reduces power loss to ≤220 mW at full load, minimizing heatsink requirements. |
| RCEsat @ 0.5 A/50 mA | 240 mΩ - quantified on-resistance simplifies thermal modeling and PCB copper area calculation for thermal management. |
| hFE @ 1 A | 70–110 - high DC current gain ensures reliable saturation with modest base drive, easing microcontroller GPIO interface design. |
| AEC-Q101 qualified | Qualified for automotive applications - validated for temperature cycling, humidity, and mechanical stress per AEC standard. |
| fT | 90–175 MHz - transition frequency supports stable operation up to several MHz in high-speed switching or oscillator auxiliary roles. |
Pinout & Package
Package: DFN2020-6 (SOT1118), 2.0 × 2.0 × 0.65 mm, thermal-enhanced ultra-thin SMD plastic package with exposed thermal pad (pin 4 is E2, not thermal pad - no integrated thermal pad; thermal path via soldered terminals).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | E1 | Emitter of transistor TR1 - connects to low-side return path; must be routed with low-inductance trace for switching stability. |
| 2 | B1 | Base of transistor TR1 - requires current-limited drive (max IB = 0.3 A DC); decoupling near MCU output improves noise immunity. |
| 3 | C2 | Collector of transistor TR2 - high-side switch node; shares package thermal mass with C1 (pin 6) for balanced dissipation. |
| 4 | E2 | Emitter of transistor TR2 - independent return for second load; enables dual-load isolation without shared emitter impedance. |
| 5 | B2 | Base of transistor TR2 - electrically isolated from B1; allows independent PWM or logic-level control of both transistors. |
| 6 | C1 | Collector of transistor TR1 - primary high-current output node; layout symmetry with C2 minimizes thermal gradient across package. |
Key Features
| Feature | Design Value |
|---|---|
| Very low VCEsat | 175–220 mV at 1 A/100 mA - cuts conduction loss by >50% vs. standard BJT, directly extending battery runtime in portable devices. |
| High hFE at high IC | 70–110 at 1 A - maintains deep saturation with low base current, reducing driver-stage power and component count. |
| Dual NPN topology | Two fully isolated transistors - eliminates need for discrete dual-transistor layouts, saving ≥30% PCB area vs. SO8 solutions. |
| AEC-Q101 qualification | Validated for automotive underhood environments (−40 °C to +150 °C junction) - enables use in body control modules and ADAS power stages. |
| Thermal resistance (Rth(j-a)) | As low as 86 K/W (4-layer PCB, 70 µm Cu, collector pad) - enables 1.45 W total dissipation without forced air cooling. |
Applications
| Load Switching | Battery-Powered Devices |
|---|---|
Use Scenario: High-side power control for USB-C PD accessory detection circuitry requiring <100 µA quiescent current and 1 A peak load capability. IC Role / Device Role / Timing Role: Dual-NPN BISS acts as low-loss, fast-turn-on load switch; TR1 controls main power path, TR2 enables status feedback sensing. Use Value: 185 mV VCEsat limits voltage drop to <0.2 V at 1 A, preserving system efficiency while supporting rapid enable/disable transitions (<540 ns off-time). |
Use Scenario: Power sequencing in compact medical wearables where board space and thermal budget are constrained. IC Role / Device Role / Timing Role: PBSS4160PAN serves as dual independent load switches - one for sensor rail, one for BLE radio - controlled by separate MCU GPIOs. Use Value: DFN2020-6 footprint (4 mm²) replaces two SOT23-6 devices (≥12 mm²), while AEC-Q101 grade ensures long-term reliability in field-deployed units. |
| Power Management | Charging Circuits |
Use Scenario: Secondary-side synchronous rectification assist in isolated DC-DC converters for industrial IoT gateways. IC Role / Device Role / Timing Role: TR1 and TR2 operate in parallel to share 1 A load current, reducing per-device thermal stress and improving overall converter efficiency. Use Value: Matched hFE and VCEsat ensure current balancing within ±15%; 240 mΩ RCEsat enables precise loss modeling for thermal derating. |
Use Scenario: Smart battery charger for Li-ion packs with dual-path current limiting (charge enable + fault cutoff). IC Role / Device Role / Timing Role: TR1 enables charging current flow; TR2 isolates fault protection circuitry - both driven independently for fail-safe behavior. Use Value: Independent emitter terminals prevent cross-talk during overcurrent shutdown; 60 V VCEO accommodates 16-cell Li-ion stacks (≤58 V max). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-NPN switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PBSS4160PANP | NPN/PNP complementary pair in same DFN2020-6 package; PNP device has higher VCEO (45 V) and lower IC (0.5 A). | Suitable for push-pull or level-shifting topologies requiring complementary drive, not dual high-side switching. | Select when bidirectional current control or rail-to-rail signal inversion is required - not a drop-in replacement for dual-NPN use cases. |
| DMN3029LSD-13 | Single-channel 30 V, 4.5 A N-channel MOSFET in SOT23-6; RDS(on) = 29 mΩ @ 4.5 V - lower on-resistance but requires gate drive >4.5 V. | Better for high-current (>1 A), low-voltage (<24 V) loads; lacks dual-device integration and AEC-Q101 rating. | Choose for higher efficiency at >500 mA in non-automotive 12 V systems; avoid where 60 V blocking or automotive qualification is mandatory. |
Compared with PBSS4160PANP and DMN3029LSD-13, PBSS4160PAN uniquely combines dual-NPN topology, 60 V rating, AEC-Q101 qualification, and sub-220 mV VCEsat in a 4 mm² footprint - making it optimal for space- and reliability-critical dual-switching functions where MOSFET gate drive complexity or PNP asymmetry is undesirable.
Availability
PBSS4160PAN is available at Aetrix Electronics and suitable for automotive body electronics, portable medical instrumentation, and industrial battery management systems requiring stable component supply, long lifecycle support, and AEC-Q101 compliance.
Supply support for PBSS4160PAN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete and logic devices for automotive, industrial, and consumer markets.
PBSS4160PAN belongs to Nexperia's BISS transistor product line - engineered specifically for high-efficiency, low-voltage switching applications where minimal conduction loss and compact packaging are critical design constraints.
FAQ
What is the maximum allowable junction temperature for PBSS4160PAN?
The absolute maximum junction temperature (Tj) is 150 °C, as defined in the Limiting Values table. Operation above this threshold risks permanent degradation of hFE and VCEsat. Derating curves in Figure 1 show power dissipation must be reduced linearly above 25 °C ambient - e.g., to 700 mW at 100 °C ambient on a 4-layer PCB with 70 µm copper.
Can PBSS4160PAN be used in parallel configurations for higher current handling?
Yes - its matched dual-NPN structure and tight VCEsat tolerance (±25 mV typical) support current sharing when paralleled externally. However, each transistor must have individual base resistors to ensure balanced drive; shared base routing introduces imbalance. Total IC remains limited to 2 A combined, respecting package thermal limits.
Is the DFN2020-6 package thermally enhanced, and how is heat dissipated?
The DFN2020-6 (SOT1118) package uses standard copper terminals - not an exposed thermal pad - so heat transfers primarily through pins 1, 4 (emitters), and 3/6 (collectors) into the PCB. Thermal resistance drops to 86 K/W only with optimized 4-layer board layout: 70 µm copper, 1 cm² collector pad, and proper solder mask definition per Figure 21.
Does PBSS4160PAN support pulsed operation beyond its DC ratings?
Yes - it supports ICM = 1.5 A for single pulses ≤1 ms (Table 5), and transient thermal impedance data (Figures 2–9) confirm safe operation at 2 A for 100 µs pulses with 1% duty cycle. Pulse handling depends on PCB thermal mass; FR4 layouts require stricter derating than 4-layer boards.
PBSS4160PAN,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-UFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 NPN (Dual)
- Current - Collector (Ic) (Max):
- 1A
- Voltage - Collector Emitter Breakdown (Max):
- 60V
- Vce Saturation (Max) @ Ib, Ic:
- 120mV @ 50mA, 500mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 150 @ 500mA, 2V
- Power - Max:
- 510mW
- Frequency - Transition:
- 175MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-HUSON (2x2)
PBSS4160PAN,115 FAQ
1.How can I place an order for PBSS4160PAN,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PBSS4160PAN,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PBSS4160PAN,115 reliable?
The price and inventory of PBSS4160PAN,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS4160PAN,115 is usually 5 days.
3.What payment methods are accepted for PBSS4160PAN,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS4160PAN,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PBSS4160PAN,115?
PBSS4160PAN,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PBSS4160PAN,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PBSS4160PAN,115?
For technical support, including PBSS4160PAN,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS4160PAN,115 requirements.
6.How does Aetrix verify that PBSS4160PAN,115 is sourced from the original manufacturer or authorized distributors?
All PBSS4160PAN,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS4160PAN,115 meets industry standards.
7.What is the process for return or replacement of PBSS4160PAN,115?
All PBSS4160PAN,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS4160PAN,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PBSS4160PAN,115 part is unused and in its original packaging.
Return procedure for PBSS4160PAN,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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