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Nexperia USA Inc. PBSS4160PANP,115
- Part No.:
- PBSS4160PANP,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays
- Package:
- 6-UFDFN Exposed Pad
- Datasheet:
-
PBSS4160PANP,115.pdf
- Description:
- TRANS NPN/PNP 60V 1A 6HUSON
- Quantity:
- Payment:
- Shipping:
Inventory:3
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Product details
Overview
PBSS4160PANP from Nexperia is a dual NPN/PNP low VCE(sat) bipolar transistor in a DFN2020-6 (SOT1118) leadless package, rated for 60 V VCEO, 1 A continuous collector current per transistor, and featuring RCE(sat) as low as 240 mΩ (NPN) and 360 mΩ (PNP) at IC = ±0.5 A. It serves as a compact, thermally efficient load switch in battery-powered power management circuits.
For engineers reviewing the PBSS4160PANP datasheet, PBSS4160PANP pinout, PBSS4160PANP application, or PBSS4160PANP equivalent, this device is selected for high-efficiency discrete switching where space-constrained PCB layouts require dual-polarity control with minimal conduction loss and reduced thermal overhead.
Technical Context
This dual-transistor device integrates one NPN (TR1) and one PNP (TR2) BISS (Bipolar Integrated Schottky) transistor on a single die in a thermally enhanced DFN2020-6 package. Each transistor supports independent operation with verified VCEO = ±60 V, IC = ±1 A, and specified switching times (ton = 105 ns, toff = 540 ns for TR1; ton = 55 ns, toff = 135 ns for TR2).
The device uses Schottky-base clamping to suppress saturation storage time and improve switching speed, while its ultra-thin 0.65 mm profile and exposed thermal pad support high-power-density board designs. Thermal resistance Rth(j-sp) is 30 K/W, enabling reliable operation up to Tj = 150 °C under appropriate PCB copper layout.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | ±60 V - Maximum safe collector-emitter voltage for both transistors under open-base conditions |
| IC | ±1 A - Continuous DC collector current rating per transistor at Tamb ≤ 25 °C |
| RCE(sat) | 240 mΩ (TR1 NPN), 360 mΩ (TR2 PNP) - Low-saturation resistance at IC = ±0.5 A, IB = ±50 mA, enabling <100 mW conduction loss per transistor |
| hFE | 70–110 (TR1), 70–100 (TR2) - DC current gain at IC = ±1 A, ensuring stable base drive requirements for switching applications |
| toff | 540 ns (TR1), 135 ns (TR2) - Verified turn-off time under defined test conditions (VCC = ±10 V, IC = ±0.5 A), supporting >1 MHz switching in optimized layouts |
| Rth(j-sp) | 30 K/W - Junction-to-solder-point thermal resistance, enabling direct thermal coupling to PCB copper for high-power-density thermal management |
Pinout & Package
DFN2020-6 (SOT1118) is a 2.0 mm × 2.0 mm × 0.65 mm leadless, thermally enhanced plastic package with an exposed thermal pad. It features six terminals in a 0.65 mm pitch, optimized for reflow soldering and high thermal conductivity to PCB copper layers.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | E1 | Emitter of TR1 (NPN transistor) - Primary current sink node for NPN half |
| 2 | B1 | Base of TR1 (NPN transistor) - Control input requiring ~50 mA drive for full saturation at 1 A |
| 3 | C2 | Collector of TR2 (PNP transistor) - Primary current source node for PNP half |
| 4 | E2 | Emitter of TR2 (PNP transistor) - Connected to positive rail in high-side switch configurations |
| 5 | B2 | Base of TR2 (PNP transistor) - Inverted control input; sinking current enables PNP conduction |
| 6 | C1 | Collector of TR1 (NPN transistor) - Primary current sink node for NPN half; electrically tied to pin 7 in package outline |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low VCE(sat) | 185–240 mV (TR1), −240 to −340 mV (TR2) at IC = ±1 A - Reduces conduction loss by >40% vs. standard BJTs, lowering thermal load on PCB |
| Dual complementary topology | Integrated NPN + PNP in single DFN2020-6 footprint - Eliminates need for two discrete packages, saving ≥30% board area in H-bridge or dual-rail switches |
| Thermally enhanced construction | Rth(j-sp) = 30 K/W and Rth(j-a) = 86 K/W (4-layer PCB, 70 µm Cu, collector pad) - Enables 2 W total device dissipation without external heatsink |
| Fast switching with Schottky clamping | toff = 135 ns (TR2), ton = 55 ns (TR2) - Supports high-frequency PWM control in battery charger and motor driver feedback paths |
Applications
| Load Switching | Battery Protection Circuit |
|---|---|
Use Scenario: Controlling power delivery to peripheral modules (e.g., USB-C port, display backlight) in portable medical devices. IC Role / Device Role / Timing Role: Dual-polarity discrete switch enabling independent enable/disable of both high-side (PNP) and low-side (NPN) paths. Use Value: 240 mΩ RCE(sat) limits voltage drop to <120 mV at 500 mA, preserving battery runtime and minimizing self-heating in sealed enclosures. |
Use Scenario: Overcurrent and reverse-polarity protection in Li-ion battery packs for handheld test equipment. IC Role / Device Role / Timing Role: PNP TR2 acts as reverse-voltage blocking element; NPN TR1 enables fast fault-disconnect signaling to protection IC. Use Value: 1.5 A peak ICM and 150 °C Tj rating allow robust response to short-circuit events without latch-up or parametric shift. |
| DC-DC Converter Synchronous Rectification | Motor Driver Half-Bridge |
Use Scenario: Replacing Schottky diodes in buck converter output stage for improved efficiency in industrial sensor nodes. IC Role / Device Role / Timing Role: NPN TR1 used as active synchronous rectifier; PNP TR2 provides gate drive isolation for high-side MOSFET control logic. Use Value: 90–175 MHz fT ensures clean switching edge integrity, reducing EMI during 500 kHz–1 MHz PWM operation. |
Use Scenario: Driving small brushed DC motors (<5 W) in robotic end-effectors with bidirectional control. IC Role / Device Role / Timing Role: NPN and PNP transistors form complementary emitter-follower output stage for low-impedance drive into motor winding. Use Value: Matched hFE (70–110) and symmetric VCE(sat) minimize shoot-through risk and ensure balanced forward/reverse torque response. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-polarity low-VCE(sat) transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PBSS4160PAN | NPN/NPN dual configuration; lacks PNP complement; identical VCEO, IC, and RCE(sat) specs for NPN side | Suitable only for dual low-side switching; cannot replace PBSS4160PANP in high-side or complementary topologies | Select when circuit requires two matched NPN switches and board layout allows separate placement |
| PBSS5160PAP | PNP/PNP dual configuration; no NPN element; same VCEO, IC, and RCE(sat) for PNP side | Applicable only in dual high-side or level-shifting roles; cannot substitute for NPN half in push-pull drivers | Choose for redundant high-side protection or dual-rail bias generation where NPN functionality is unnecessary |
Compared with PBSS4160PANP, PBSS4160PAN offers identical NPN performance but no PNP capability-requiring external components for complementary operation-while PBSS5160PAP provides matched PNP characteristics but omits the NPN switch, limiting use to unidirectional or stacked high-side architectures.
Availability
PBSS4160PANP is available at Aetrix Electronics and suitable for load switching, battery protection circuits, and motor driver half-bridges requiring stable component supply across industrial, medical, and portable electronics programs.
Supply support for PBSS4160PANP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert specializing in high-performance, energy-efficient discrete and logic devices, with leadership in automotive-qualified and industrial-grade components.
PBSS4160PANP belongs to Nexperia's low VCE(sat) BISS transistor product line, engineered for high-efficiency power switching in space- and thermal-constrained applications such as portable instrumentation and battery management systems.
FAQ
What is the maximum allowable junction temperature for PBSS4160PANP?
The absolute maximum junction temperature (Tj) is 150 °C, as defined in the Absolute Maximum Ratings table. Operation above this temperature risks permanent parametric degradation or failure. Derating curves in Figure 1 confirm that full 1.45 W per transistor power dissipation is only valid at Tamb ≤ 25 °C on a 4-layer PCB with 70 µm copper and collector pad.
Can PBSS4160PANP be used in linear amplifier mode?
No-it is specifically characterized and optimized for switching operation. Its hFE variation over IC (Fig. 10/18), low RCE(sat), and Schottky-clamped structure indicate design intent for saturated switching, not analog amplification. Linear operation would cause excessive localized heating and unpredictable gain due to thermal runaway risk.
How does the DFN2020-6 package affect PCB layout and thermal design?
The DFN2020-6 (SOT1118) requires precise solder paste stencil design (0.125 mm thickness, 0.49 mm aperture per pad) and a dedicated thermal pad (1 cm² minimum) connected to internal ground/power planes via ≥4 thermal vias. Layout deviations reduce Rth(j-a) performance by up to 2×, directly impacting maximum sustainable IC.
Is PBSS4160PANP qualified for automotive applications?
No-the September 2025 revision explicitly states "Product(s) changed to non-automotive qualification." Automotive-grade alternatives (e.g., PBSS4160PANQ) are available from Nexperia but differ in qualification testing, traceability, and packaging marking. This part is intended for industrial, medical, and consumer applications only.
PBSS4160PANP,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-UFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 1 NPN, 1 PNP
- Current - Collector (Ic) (Max):
- 1A
- Voltage - Collector Emitter Breakdown (Max):
- 60V
- Vce Saturation (Max) @ Ib, Ic:
- 120mV @ 50mA, 500mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 150 @ 500mA, 2V
- Power - Max:
- 510mW
- Frequency - Transition:
- 175MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-HUSON (2x2)
PBSS4160PANP,115 FAQ
1.How can I place an order for PBSS4160PANP,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PBSS4160PANP,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PBSS4160PANP,115 reliable?
The price and inventory of PBSS4160PANP,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS4160PANP,115 is usually 5 days.
3.What payment methods are accepted for PBSS4160PANP,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS4160PANP,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PBSS4160PANP,115?
PBSS4160PANP,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PBSS4160PANP,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PBSS4160PANP,115?
For technical support, including PBSS4160PANP,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS4160PANP,115 requirements.
6.How does Aetrix verify that PBSS4160PANP,115 is sourced from the original manufacturer or authorized distributors?
All PBSS4160PANP,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS4160PANP,115 meets industry standards.
7.What is the process for return or replacement of PBSS4160PANP,115?
All PBSS4160PANP,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS4160PANP,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PBSS4160PANP,115 part is unused and in its original packaging.
Return procedure for PBSS4160PANP,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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