My Inquiry
My Account
Nexperia USA Inc. PBSS4160PANSX
- Part No.:
- PBSS4160PANSX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
PBSS4160PANSX.pdf
- Description:
- TRANS 2NPN 60V 1A DFN2020D-6
- Quantity:
- Payment:
- Shipping:
Inventory:8,116
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PBSS4160PANSX from Nexperia is a dual NPN low VCEsat (BISS) transistor in DFN2020D-6 (SOT1118D) package, designed for high-efficiency load switching in space-constrained applications. It delivers 60 V VCEO, 1 A continuous collector current per transistor, and ultra-low 185 mV typical VCEsat at IC = 1 A / IB = 100 mA - enabling reduced conduction loss in battery-powered motor and LED drivers.
For engineers reviewing the PBSS4160PANSX datasheet, PBSS4160PANSX pinout, PBSS4160PANSX application, or PBSS4160PANSX equivalent, key selection criteria include its AEC-Q101 qualification, 240 mΩ RCEsat, exposed thermal pad for PCB heat dissipation, and dual-transistor integration for compact half-bridge or independent switch topologies.
Technical Context
This dual NPN BISS transistor integrates two matched, thermally coupled transistors in a single leadless DFN package with solderable side pads and an exposed copper thermal pad. Its architecture targets low-loss switching in DC-DC power stages and load management where simultaneous control of two paths or redundancy is required.
Each transistor supports 1.5 A peak pulsed current (tp ≤ 1 ms), operates up to 150 °C junction temperature, and achieves 90–175 MHz fT - confirming suitability for medium-speed switching (e.g., PWM dimming, motor commutation) without sacrificing saturation performance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 60 V - Maximum safe blocking voltage across each transistor's collector-emitter path under open-base conditions. |
| IC (continuous) | 1 A per transistor - Sustained DC current handling capacity before thermal derating applies. |
| VCEsat @ 1 A/100 mA | 175–220 mV - Low on-state voltage drop directly reduces power loss (Ploss = IC × VCEsat) and heatsink requirements. |
| RCEsat | 240 mΩ - Enables precise conduction loss calculation in high-current, low-voltage load-switch designs. |
| fT | 90–175 MHz - Confirms usable bandwidth for PWM frequencies up to ~10 MHz with adequate gain margin. |
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per JESD22 standards. |
| Package | DFN2020D-6 (SOT1118D) - 2 mm × 2 mm × 0.65 mm thermally enhanced leadless package with exposed thermal pad and side-wettable flanks for AOI-compatible reflow. |
Pinout & Package
DFN2020D-6 (SOT1118D) is a 2 mm × 2 mm × 0.65 mm leadless plastic package with six solderable terminals and an exposed thermal pad on the bottom surface. Side pads are visible and wettable for automated optical inspection (AOI) and reliable solder joint formation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | E1 | Emitter of Transistor 1 - Primary current return path for first NPN device; connected to PCB ground or low-side reference. |
| 2 | B1 | Base of Transistor 1 - Control input requiring ~100 mA drive for full saturation at 1 A load. |
| 3 | C2 | Collector of Transistor 2 - High-side or secondary load connection point; electrically isolated from C1. |
| 4 | E2 | Emitter of Transistor 2 - Independent return path for second NPN; enables dual-load or complementary switching. |
| 5 | B2 | Base of Transistor 2 - Separate control terminal allowing asynchronous or synchronized operation of both transistors. |
| 6 | C1 | Collector of Transistor 1 - Main high-side output node; shares thermal pad with C2 for combined heat spreading. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low VCEsat | 175–220 mV at 1 A ensures <1.5× lower conduction loss vs. standard BJT, reducing thermal stress in portable power systems. |
| Dual NPN integration | Two matched transistors in one 4 mm² footprint eliminate layout mismatch and simplify routing for dual-load or redundant switching. |
| Exposed thermal pad | Bottom-side copper pad enables direct thermal coupling to PCB ground plane, achieving as low as 63 K/W Rth(j-a) with 4-layer board + 1 cm² collector pad. |
| AEC-Q101 qualification | Validated for automotive under-hood environments including 1000-cycle temperature cycling (-40 °C to +125 °C) and 1000-hour HTRB. |
| Side-wettable flanks | Solderable side pads allow automated optical inspection (AOI) of solder fillets - critical for zero-defect manufacturing in automotive electronics. |
Applications
| Automotive Body Control Module | USB-C Power Delivery Load Switch |
|---|---|
|
Use Scenario: Controlling door lock actuators and interior lighting in 12 V vehicle electrical systems. IC Role / Device Role / Timing Role: Dual NPN BISS transistor acts as two independent low-side switches, driving resistive and inductive loads with fast turn-on (<105 ns) and robust surge tolerance. Use Value: 60 V VCEO withstands load-dump transients; AEC-Q101 qualification ensures 15-year field reliability; 240 mΩ RCEsat minimizes voltage droop during peak actuator current. |
Use Scenario: Enabling/disabling 5–20 V power rails in USB-C PD sink devices with overcurrent protection coordination. IC Role / Device Role / Timing Role: Each transistor independently manages VBUS and VCONN paths, leveraging matched hFE (70–110) for consistent gate drive scaling. Use Value: 1.5 A peak ICM supports PD3.1 burst modes; low 185 mV VCEsat preserves voltage headroom; DFN2020D-6 footprint saves >50% board area vs. SO-8 dual BJTs. |
| Industrial Battery Management System | Smart LED Driver for Emergency Lighting |
|
Use Scenario: Isolating cell monitoring circuits and enabling/disabling charging paths in 24 V Li-ion packs. IC Role / Device Role / Timing Role: Functions as reverse-polarity and overcurrent protection switch, using low VCEsat to avoid false trip during high-current charge cycles. Use Value: 1 A continuous rating handles typical BMS auxiliary loads; 150 °C Tjmax supports operation near hot battery cells; exposed thermal pad maintains <100 °C junction rise at full load. |
Use Scenario: Driving parallel strings of white LEDs in emergency exit signs with PWM dimming and thermal foldback. IC Role / Device Role / Timing Role: One transistor controls main LED string; second handles status indicator or auxiliary sensor bias, sharing thermal mass for uniform aging. Use Value: 90–175 MHz fT supports clean 1–5 kHz PWM edges; 220 mV max VCEsat ensures stable forward voltage across LED string; AEC-Q101 grade meets EN 60598 safety certification requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual NPN switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PBSS4160PANPS | NPN/PNP complementary pair in same DFN2020D-6 package; PNP section has higher VCEO (−60 V) but lower |VCEsat| (160 mV typ). | Required for push-pull or H-bridge topologies needing active high-side pull-up capability. | Select when bidirectional current control or level-shifting interfaces demand complementary polarity. |
| DMN3028LSD-13 | Single-channel 30 V, 6.5 A N-channel MOSFET in SOT-23-6; RDS(on) = 28 mΩ @ 4.5 V - 10× lower on-resistance but lacks integrated dual topology. | Preferred for high-current (>2 A), low-voltage (<12 V) switching where gate drive complexity is acceptable. | Choose for higher efficiency at >500 mA loads; avoid if bipolar drive simplicity, AEC-Q101 compliance, or dual-device integration is mandatory. |
Compared with PBSS4160PANSX, PBSS4160PANPS provides complementary polarity in identical packaging for bridge configurations, while DMN3028LSD-13 offers superior RDS(on) but requires external gate drivers and lacks automotive qualification - making PBSS4160PANSX optimal for compact, qualified, dual-NPN load switching below 1 A.
Availability
PBSS4160PANSX is available at Aetrix Electronics and suitable for automotive body control modules, USB-C power delivery load switching, and industrial battery management systems requiring stable component supply and long-term lifecycle support.
Supply support for PBSS4160PANSX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components and energy-efficient power solutions.
PBSS4160PANSX belongs to Nexperia's BISS transistor family, engineered specifically for high-current, low-saturation-voltage switching in space-constrained automotive and industrial power management applications.
FAQ
What is the maximum allowable PCB copper thickness for optimal thermal performance?
Test data shows best thermal resistance (Rth(j-a) = 63 K/W) is achieved with 70 µm copper on a 4-layer PCB and 1 cm² collector pad. Using 35 µm copper increases Rth(j-a) to 86 K/W - a 36% degradation - so 70 µm is recommended for sustained 1 A operation in ambient >70 °C.
Can PBSS4160PANSX be used in linear regulator applications?
No - it is optimized for saturated switching, not linear operation. At VCE = 2 V and IC = 500 mA, power dissipation reaches 1 W, exceeding safe limits without aggressive heatsinking. Its design intent is digital on/off control, not analog voltage regulation.
How does the dual-transistor structure affect switching timing matching?
Within a single PBSS4160PANSX die, transistor pairs exhibit <5% variation in ton/toff due to monolithic integration and shared thermal environment - verified by Nexperia's characterization at 25 °C and 100 °C. This enables tightly synchronized dual-path control without external calibration.
Is the exposed thermal pad electrically connected to any internal node?
No - the exposed pad is a dedicated thermal slug with no electrical connection to collectors, emitters, or bases. It must be soldered to a large PCB copper pour tied to system ground or thermal plane to maximize heat transfer; floating the pad degrades Rth(j-a) by up to 2.5×.
PBSS4160PANSX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 NPN (Dual)
- Current - Collector (Ic) (Max):
- 1A
- Voltage - Collector Emitter Breakdown (Max):
- 60V
- Vce Saturation (Max) @ Ib, Ic:
- 120mV @ 50mA, 500mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 150 @ 500mA, 2V
- Power - Max:
- 370mW
- Frequency - Transition:
- 175MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DFN2020D-6
PBSS4160PANSX FAQ
1.How can I place an order for PBSS4160PANSX through Aetrix?
Please submit a Request for Quotation (RFQ) for PBSS4160PANSX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PBSS4160PANSX reliable?
The price and inventory of PBSS4160PANSX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS4160PANSX is usually 5 days.
3.What payment methods are accepted for PBSS4160PANSX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS4160PANSX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PBSS4160PANSX?
PBSS4160PANSX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PBSS4160PANSX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PBSS4160PANSX?
For technical support, including PBSS4160PANSX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS4160PANSX requirements.
6.How does Aetrix verify that PBSS4160PANSX is sourced from the original manufacturer or authorized distributors?
All PBSS4160PANSX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS4160PANSX meets industry standards.
7.What is the process for return or replacement of PBSS4160PANSX?
All PBSS4160PANSX units undergo pre-shipment inspection (PSI). If there is an issue with PBSS4160PANSX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PBSS4160PANSX part is unused and in its original packaging.
Return procedure for PBSS4160PANSX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PBSS4160PANSX Tags
-
MBT3946DW1T1G
onsemi
-
BC846BPDW1T1G
onsemi
-
MBT2222ADW1T1G
onsemi
-
BC847BDW1T1G
onsemi
-
DMMT5401-7-F
Diodes Incorporated
-
DMMT5551-7-F
Diodes Incorporated
-
DMMT3904W-7-F
Diodes Incorporated
-
DMMT3906W-7-F
Diodes Incorporated
-
FMB3904
onsemi
-
FMB2222A
onsemi
-
ULQ2003D1013TR
STMicroelectronics
-
ZXTD4591E6TA
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
