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Nexperia USA Inc. PBSS4230PAN,115
- Part No.:
- PBSS4230PAN,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays
- Package:
- 6-UFDFN Exposed Pad
- Datasheet:
-
PBSS4230PAN,115.pdf
- Description:
- TRANS 30V 2A 6HUSON
- Quantity:
- Payment:
- Shipping:
Inventory:2,970
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Product details
Overview
PBSS4230PAN,115 from Nexperia is a dual NPN low VCEsat BISS transistor in DFN2020-6 (SOT1118) package, rated for 30 V VCEO, 2 A continuous collector current per transistor, and 145 mΩ RCEsat at IC = 1 A / IB = 0.1 A. It serves as a high-efficiency load switch in automotive power management and battery-driven motor control circuits.
For engineers reviewing the PBSS4230PAN,115 datasheet, PBSS4230PAN,115 pinout, PBSS4230PAN,115 application, or PBSS4230PAN,115 equivalent, key selection criteria include its AEC-Q101 qualification, dual-transistor layout enabling compact dual-switch topologies, and verified thermal performance on FR4 and 4-layer PCBs with defined mounting pad configurations.
Technical Context
This device integrates two matched NPN transistors in a single ultra-thin DFN2020-6 package, sharing no internal connection between them-each transistor operates independently with dedicated emitter, base, and collector terminals. Its BISS (Breakthrough In Small Signal) architecture delivers lower saturation voltage than standard bipolar transistors while maintaining high hFE (150–230 at IC = 2 A).
The pinout supports symmetrical PCB layout for balanced current paths: TR1 uses pins 1 (E1), 2 (B1), and 6 (C1); TR2 uses pins 4 (E2), 5 (B2), and 3 (C2). Thermal resistance to ambient ranges from 86 K/W (4-layer PCB, 70 µm copper, 1 cm² collector pad) to 338 K/W (FR4, 35 µm, standard footprint), directly impacting derating in sustained-load applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 30 V - Maximum safe collector-emitter voltage with base open; defines upper rail limit in 24 V automotive systems. |
| IC (continuous) | 2 A per transistor - Sustained switching capability without thermal shutdown under specified PCB cooling conditions. |
| VCEsat @ IC=2 A, IB=200 mA | 220–290 mV - Enables <1 W conduction loss per transistor at full load, reducing heatsink requirements. |
| RCEsat | 145 mΩ - Directly usable in Ohm's Law calculations for precise I²R loss estimation in power path design. |
| hFE @ IC=2 A | 150–230 - Ensures reliable saturation with modest base drive (IB ≥ 8.7–13.3 mA), easing MCU GPIO interface. |
| AEC-Q101 qualified | Validated for automotive temperature range (−55 °C to +150 °C) and stress testing; supports ASIL-B system integration. |
| Ptot (4-layer PCB, 70 µm, 1 cm² pad) | 2000 mW - Maximum dissipated power before junction exceeds 150 °C; enables higher duty-cycle operation. |
Pinout & Package
DFN2020-6 (SOT1118) is a leadless, thermally enhanced surface-mount package measuring 2.0 × 2.0 × 0.65 mm, with exposed thermal pad on underside for direct PCB heat transfer. The 6-terminal layout supports dual independent transistor routing with no shared terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | E1 | Emitter of transistor TR1 - connects to low-side return path; must be routed to ground plane or low-impedance node. |
| 2 | B1 | Base of transistor TR1 - requires current-limited drive (max IB = 0.3 A DC); sensitive to ESD. |
| 3 | C2 | Collector of transistor TR2 - high-side switching node; ties to load supply or motor phase. |
| 4 | E2 | Emitter of transistor TR2 - isolated return for second load; not internally connected to E1. |
| 5 | B2 | Base of transistor TR2 - independent control input; allows asynchronous or complementary switching. |
| 6 | C1 | Collector of transistor TR1 - primary high-current output; shares package thermal path with C2. |
Key Features
| Feature | Design Value |
|---|---|
| Low VCEsat | 220–290 mV at full 2 A load reduces conduction loss by >50% vs. standard bipolar transistors, improving battery runtime. |
| Dual NPN topology | Two fully isolated transistors enable H-bridge half-bridge, dual-load switching, or redundant drive without external isolation components. |
| AEC-Q101 qualification | Validated for automotive-grade reliability including temperature cycling, humidity bias, and ESD (HBM ≥ 2 kV), supporting under-hood deployment. |
| Thermal enhancement | Exposed thermal pad and low Rth(j-sp) = 30 K/W allow efficient heat transfer to PCB, enabling 2 W dissipation on compact layouts. |
| High hFE at high current | hFE ≥ 150 at IC = 2 A ensures stable saturation with microcontroller-compatible base drive (e.g., 3.3 V GPIO + 10 kΩ resistor). |
Applications
| Automotive Body Control Module | USB-C Power Delivery Load Switch |
|---|---|
|
Use Scenario: Controlling interior lighting, window lift motors, and door lock actuators in 12 V/24 V vehicle architectures. IC Role / Device Role / Timing Role: Dual NPN switch providing independent low-side drive for two resistive or inductive loads with fast turn-on (<60 ns) and minimal cross-conduction risk. Use Value: AEC-Q101 rating and 150 °C Tj max ensure uninterrupted operation in engine bay–adjacent modules; 290 mV VCEsat limits self-heating during extended duty cycles. |
Use Scenario: Enabling/disabling VBUS path in portable electronics with USB-C PD negotiation and overcurrent protection. IC Role / Device Role / Timing Role: Low-loss, bidirectionally controllable power switch handling up to 2 A continuous load current with precise enable timing. Use Value: 145 mΩ RCEsat keeps voltage drop below 300 mV at 2 A, preserving PD compliance margins; DFN2020-6 footprint saves board space versus SO-8 alternatives. |
| Smartphone Battery Protection Circuit | Industrial PLC Digital Output Module |
|
Use Scenario: Isolating main battery from charging IC and system load during fault conditions (overvoltage, short circuit). IC Role / Device Role / Timing Role: Fast-acting dual switch interrupting both charge and discharge paths within microseconds using independent gate control. Use Value: 370 ns toff and 60 ns ton support rapid fault response; low 100 nA ICBO prevents leakage-induced battery drain during standby. |
Use Scenario: Driving 24 V solenoids, relays, and indicator LEDs in factory automation controllers with DIN-rail mounting. IC Role / Device Role / Timing Role: High-current, thermally robust output stage delivering 2 A per channel with integrated thermal foldback via PCB copper area design. Use Value: 2000 mW Ptot on 4-layer PCB enables continuous 2 A switching without external heatsinks; 70 µm copper pad guidance simplifies thermal validation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual NPN switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PBSS4230PANP | NPN/PNP complementary pair in same DFN2020-6 package; PNP side has −30 V VCEO, −2 A IC, and −290 mV VECsat. | Enables push-pull or level-shifted drive where bidirectional current flow or high-side switching is required. | Select when designing complementary output stages or need active pull-up capability alongside pull-down. |
| DMN3028LSD-13 | Single-channel 30 V, 6.5 A N-channel MOSFET in SOT-23; RDS(on) = 28 mΩ @ VGS = 10 V; gate threshold 1–2.5 V. | Lower on-resistance but requires higher gate drive voltage and lacks inherent current gain; no AEC-Q101 rating. | Prefer for low-voltage logic-level drive and ultra-low loss; avoid in automotive or high-reliability contexts requiring qualification. |
Compared with PBSS4230PAN,115, PBSS4230PANP adds high-side switching flexibility at the cost of asymmetric device characteristics, while DMN3028LSD-13 trades bipolar simplicity and AEC-Q101 assurance for lower RDS(on) and gate-drive complexity.
Availability
PBSS4230PAN,115 is available at Aetrix Electronics and suitable for automotive body control modules, USB-C power delivery systems, smartphone battery protection circuits, and industrial PLC digital output modules requiring stable component supply across production lifecycles.
Supply support for PBSS4230PAN,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, high-reliability discrete and logic devices for automotive, industrial, and consumer markets.
PBSS4230PAN,115 belongs to Nexperia's BISS transistor product line, engineered specifically for high-current, low-saturation-voltage switching in space-constrained and thermally demanding applications such as automotive power distribution and portable power management.
FAQ
What is the maximum allowable junction temperature for PBSS4230PAN,115?
The absolute maximum junction temperature (Tj) is 150 °C, as defined in the limiting values table. Operation above this temperature risks permanent parametric shift or failure. Derating curves in Figure 1 show power limits versus ambient temperature for eight PCB mounting configurations, with thermal resistance ranging from 86 K/W to 338 K/W depending on copper weight and pad area.
Can PBSS4230PAN,115 be used in linear (analog) amplifier applications?
No-it is optimized for saturated switching operation, not linear amplification. Its hFE drops significantly above VCE = 2 V, and VCEsat specification dominates the datasheet. The device lacks guaranteed small-signal parameters like fT stability across bias points or noise figure data required for analog gain stages.
How does the DFN2020-6 package affect soldering process design?
The DFN2020-6 (SOT1118) requires reflow profile adherence to IPC-J-STD-020, with peak temperature ≤ 260 °C and time above liquidus 60–90 seconds. Figure 21 specifies solder land dimensions: 0.49 × 0.49 mm pads for pins 1–6, plus a 2.1 × 2.1 mm thermal pad with 0.35 mm stencil aperture. Insufficient thermal pad paste volume causes voiding and elevated Rth(j-a).
Is there internal connection between the two transistors in PBSS4230PAN,115?
No-TR1 (pins 1, 2, 6) and TR2 (pins 4, 5, 3) are electrically isolated die in one package. Pin 6 is C1 (TR1 collector), pin 3 is C2 (TR2 collector), and no internal bond wires link their emitters, bases, or collectors. This enables independent control, separate ground returns, and fault isolation in dual-load designs.
PBSS4230PAN,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-UFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- -
- Current - Collector (Ic) (Max):
- 2A
- Voltage - Collector Emitter Breakdown (Max):
- 30V
- Vce Saturation (Max) @ Ib, Ic:
- 290mV @ 200mA, 2A
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 1A, 2V
- Power - Max:
- 510mW
- Frequency - Transition:
- 120MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-HUSON (2x2)
PBSS4230PAN,115 FAQ
1.How can I place an order for PBSS4230PAN,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PBSS4230PAN,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PBSS4230PAN,115 reliable?
The price and inventory of PBSS4230PAN,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS4230PAN,115 is usually 5 days.
3.What payment methods are accepted for PBSS4230PAN,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS4230PAN,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PBSS4230PAN,115?
PBSS4230PAN,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PBSS4230PAN,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PBSS4230PAN,115?
For technical support, including PBSS4230PAN,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS4230PAN,115 requirements.
6.How does Aetrix verify that PBSS4230PAN,115 is sourced from the original manufacturer or authorized distributors?
All PBSS4230PAN,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS4230PAN,115 meets industry standards.
7.What is the process for return or replacement of PBSS4230PAN,115?
All PBSS4230PAN,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS4230PAN,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PBSS4230PAN,115 part is unused and in its original packaging.
Return procedure for PBSS4230PAN,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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