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Nexperia USA Inc. PBSS4230PANP,115

Part No.:
PBSS4230PANP,115
Manufacturer:
Nexperia USA Inc.
Category:
Bipolar Transistor Arrays
Package:
6-UFDFN Exposed Pad
Datasheet:
AetrixPBSS4230PANP,115.pdf
Description:
TRANS NPN/PNP 30V 2A 6HUSON
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,677

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Product details

Overview

PBSS4230PANP from Nexperia is a dual NPN/PNP low VCE(sat) BISS transistor in a DFN2020-6 (SOT1118) package, rated for 30 V VCEO, 2 A continuous collector current per transistor, and featuring 145 mΩ/195 mΩ RCE(sat) at 1 A for NPN/PNP respectively. It serves as a compact, thermally efficient load switch in battery-powered power management circuits.

For engineers reviewing the PBSS4230PANP datasheet, PBSS4230PANP pinout, PBSS4230PANP application, or PBSS4230PANP equivalent, this device offers AEC-Q101 qualification, ultra-low saturation resistance, dual complementary topology in one leadless package, and validated thermal performance on FR4 and multilayer PCBs - critical for automotive-grade power switching and space-constrained DC-DC control.

Technical Context

This dual BISS transistor integrates an NPN (TR1) and PNP (TR2) die in a single DFN2020-6 package with shared thermal path and independent terminal routing. Each transistor supports high-current switching with hFE = 150–230 (NPN) and 100–145 (PNP) at IC = 2 A, enabling precise current gain matching across polarity.

The device uses breakthrough low-saturation technology to achieve RCE(sat) as low as 145 mΩ (NPN) and 195 mΩ (PNP) under pulsed 1 A / 100 mA drive, reducing conduction loss and PCB copper area requirements. Its AEC-Q101 qualification confirms robustness for automotive ambient temperature ranges (−55 °C to +150 °C) and transient stress conditions.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 30 V maximum - supports 24 V automotive and industrial bus systems with margin.
IC (continuous) 2 A per transistor - enables direct driving of medium-power loads like fans, LEDs, and MOSFET gates without external buffering.
RCE(sat) (NPN) 145 mΩ at IC = 1 A, IB = 100 mA - reduces voltage drop and heat generation vs. standard BJTs.
RCE(sat) (PNP) 195 mΩ at IC = −1 A, IB = −100 mA - ensures symmetric low-loss switching in complementary configurations.
fT 60–120 MHz (NPN), 50–95 MHz (PNP) - supports fast switching in PWM-based power control up to ~1 MHz.
AEC-Q101 qualified Validated for automotive use - meets stress test requirements for temperature cycling, HTRB, and ESD.
Ptot (4-layer PCB, 70 µm Cu, pad) 2.0 W - enables higher power density than SOT23/SOT363 alternatives with comparable footprint.

Pinout & Package

DFN2020-6 (SOT1118) is a 2.0 × 2.0 × 0.65 mm leadless thermal-enhanced plastic package with exposed thermal pad. It provides superior thermal resistance (Rth(j-sp) = 30 K/W) and reduced PCB area versus traditional SO/TSOP packages.

Pin/Terminal Circuit Role Design Meaning
1 Emitter of TR1 (NPN) Low-impedance emitter connection for NPN transistor; ties directly to ground or low-side return path.
2 Base of TR1 (NPN) Control input for NPN switch; requires ~100 mA drive for full saturation at 2 A load.
3 Collector of TR2 (PNP) High-side output node for PNP transistor; connects to positive rail or load supply.
4 Emitter of TR2 (PNP) Output terminal for PNP switch; delivers current to load when TR2 is active.
5 Base of TR2 (PNP) Inverted control input for PNP; driven low (relative to emitter) to turn on high-side switch.
6 Collector of TR1 (NPN) Low-side output node for NPN transistor; sinks current from load to ground.

Key Features

Feature Design Value
Ultra-low RCE(sat) 145 mΩ (NPN) / 195 mΩ (PNP) - cuts conduction loss by >50% vs. conventional BJTs at 1 A.
Dual complementary topology Single-package NPN+PNP pair - eliminates layout mismatch, reduces component count, and simplifies gate-drive design.
AEC-Q101 qualification Validated for automotive underhood environments - guarantees reliability over 15-year service life at 125 °C ambient.
Thermal enhancement Rth(j-a) = 63 K/W on 4-layer PCB with 1 cm² collector pad - enables 2× power handling vs. standard DFN2020-6 parts.
Reduced PCB footprint 2.0 × 2.0 mm body - saves >60% board area compared to discrete SOT23 pairs while improving thermal coupling.

Applications

Load Switching Battery Protection

Use Scenario: High-efficiency on/off control of 12 V/24 V DC loads such as solenoids, relays, and LED arrays in automotive body electronics.

IC Role / Device Role / Timing Role: Dual-transistor load switch providing simultaneous high-side (PNP) and low-side (NPN) control with matched timing and low dropout.

Use Value: 145–195 mΩ RCE(sat) minimizes voltage drop and self-heating, extending battery runtime and eliminating need for heatsinking.

Use Scenario: Reverse-polarity and overcurrent protection in portable medical devices and handheld test equipment powered by Li-ion packs.

IC Role / Device Role / Timing Role: PNP high-side switch isolates battery during fault conditions; NPN monitors current sense resistor and triggers shutdown.

Use Value: Matched hFE and fast switching (toff = 245–370 ns) enable sub-10 µs fault response, preventing cell damage.

Power Management IC Interface Motor/Fan Driver Stage

Use Scenario: Level-shifting and current-boosting interface between low-voltage PMIC outputs (1.8 V/3.3 V GPIO) and 5–24 V power rails in industrial controllers.

IC Role / Device Role / Timing Role: NPN/PNP pair acts as bidirectional level translator and current amplifier for enable/control signals.

Use Value: Low VBE(sat) (≤1.2 V) ensures full logic-level compatibility; 2 A rating supports PMICs driving multiple downstream regulators.

Use Scenario: Half-bridge driver stage for small brushed DC motors and cooling fans in automotive HVAC and ADAS modules.

IC Role / Device Role / Timing Role: Complementary BISS pair forms compact half-bridge with integrated current gain, replacing discrete MOSFET+driver combos.

Use Value: Symmetric RCE(sat) and ton/toff ensure balanced dead-time control and minimize shoot-through risk in PWM operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual complementary BJT applications.

Alternative Part Technical Difference Application Difference Selection Advice
PBSS4230PAN NPN/NPN dual only - lacks PNP transistor; identical NPN specs but no high-side switching capability. Suitable only for low-side parallel or push-pull configurations; cannot replace PBSS4230PANP in high-side load switching. Select when dual NPN topology suffices and board space allows separate PNP solution.
PBSS5230PAP PNP/PNP dual only - lacks NPN transistor; matches PNP specs but no low-side sink capability. Applicable only in high-side redundant or current-mirror designs; cannot substitute for NPN-controlled loads. Choose when complementary PNP pairing is needed, e.g., for dual high-side OR-ing or reverse-battery protection.

Compared with PBSS4230PAN and PBSS5230PAP, PBSS4230PANP uniquely integrates both polarities in one thermally optimized package - eliminating inter-device thermal imbalance, reducing layout complexity, and enabling true complementary switching without external bias networks.

Availability

PBSS4230PANP is available at Aetrix Electronics and suitable for automotive body control modules, portable medical power supplies, and industrial motor drivers requiring stable component supply, AEC-Q101 compliance, and high-density power switching.

Supply support for PBSS4230PANP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete and logic devices for automotive, industrial, and consumer markets.

PBSS4230PANP belongs to Nexperia's BISS transistor product line, engineered specifically for high-current, low-loss switching in space- and thermal-constrained applications where traditional BJTs or MOSFETs lack cost or integration advantages.

FAQ

What is the maximum safe operating junction temperature for PBSS4230PANP?

The absolute maximum junction temperature (Tj) is 150 °C, as defined in the limiting values table. Operation above this threshold risks permanent degradation of hFE, RCE(sat), and long-term reliability. Derating curves in Figure 1 confirm usable power dissipation drops to zero at 150 °C ambient on standard FR4 layouts.

Can PBSS4230PANP be used in linear (analog) amplification mode?

No - PBSS4230PANP is optimized for switching operation with low VCE(sat) and high fT, not linear gain stability. Its hFE varies significantly with IC and temperature (Fig. 10/18), and thermal runaway risk is elevated in analog bias due to low RCE(sat)-driven self-heating. It is specified and qualified exclusively for switching applications.

How does the DFN2020-6 package affect PCB assembly yield?

The DFN2020-6 (SOT1118) package uses a standardized reflow footprint (Fig. 31) with 0.49 mm solder pads and 0.65 mm pitch, supporting high-yield automated placement and reflow. Its exposed thermal pad improves thermal transfer and reduces tombstoning risk versus smaller-pitch QFNs, and IPC-7351-compliant land patterns are published by Nexperia for verified manufacturability.

Is PBSS4230PANP pin-compatible with other DFN2020-6 transistors?

No - pin assignment is unique to the PBSS4230PANP dual complementary topology (E1-B1-C2-E2-B2-C1). Other DFN2020-6 transistors (e.g., PBSS4041PAN, PMMBT3904) use different pinouts (e.g., E-B-C for singles), making direct replacement impossible without PCB redesign. Always verify pin mapping using Table 2 in the datasheet.

PBSS4230PANP,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
6-UFDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
1 NPN, 1 PNP
Current - Collector (Ic) (Max):
2A
Voltage - Collector Emitter Breakdown (Max):
30V
Vce Saturation (Max) @ Ib, Ic:
290mV @ 200mA, 2A
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 1A, 2V
Power - Max:
510mW
Frequency - Transition:
120MHz
Operating Temperature:
150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q100
Mounting Type:
Surface Mount
Supplier Device Package:
6-HUSON (2x2)

PBSS4230PANP,115 FAQ

1.How can I place an order for PBSS4230PANP,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS4230PANP,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS4230PANP,115 reliable?

The price and inventory of PBSS4230PANP,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS4230PANP,115 is usually 5 days.

3.What payment methods are accepted for PBSS4230PANP,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS4230PANP,115 transactions.

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4.How is shipping managed for PBSS4230PANP,115?

PBSS4230PANP,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS4230PANP,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS4230PANP,115?

For technical support, including PBSS4230PANP,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS4230PANP,115 requirements.

6.How does Aetrix verify that PBSS4230PANP,115 is sourced from the original manufacturer or authorized distributors?

All PBSS4230PANP,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS4230PANP,115 meets industry standards.

7.What is the process for return or replacement of PBSS4230PANP,115?

All PBSS4230PANP,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS4230PANP,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS4230PANP,115 part is unused and in its original packaging.

Return procedure for PBSS4230PANP,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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