Nexperia USA Inc. PBSS5160PAP,115

Overview

PBSS5160PAP from Nexperia is a dual PNP low V_CEsat (BISS) transistor in DFN2020-6 (SOT1118) package, designed for high-efficiency load switching in space-constrained automotive and portable power systems. It delivers −60 V V_CEO, −1 A continuous I_C, and 360 mΩ R_CEsat at −0.5 A/−50 mA drive - enabling compact, thermally efficient battery-driven motor and charging circuits.

For engineers reviewing the PBSS5160PAP datasheet, PBSS5160PAP pinout, PBSS5160PAP application, or PBSS5160PAP equivalent, key selection criteria include verified dual-PNP topology, AEC-Q101 qualification, thermal resistance down to 86 K/W (4-layer PCB), and precise saturation voltage behavior across −55 °C to +150 °C ambient.

Technical Context

This device integrates two matched PNP BISS transistors on a single die in a thermally enhanced leadless DFN2020-6 package. Its architecture minimizes V_CEsat via optimized base doping and emitter geometry, achieving ≤ −390 mV at −1 A/−50 mA while maintaining h_FE ≥ 70 under full-load conditions.

Each transistor operates independently with isolated emitter, base, and collector terminals - supporting complementary switching configurations (e.g., high-side driver pairs or dual-channel load control). The SOT1118 footprint enables <1 cm² board area usage and supports reflow-compatible soldering per IPC-J-STD-020.

Key Specifications

Pinout & Package

DFN2020-6 (SOT1118) is a 2.0 mm × 2.0 mm × 0.65 mm leadless surface-mount package with exposed thermal pad (pin 7/8 not electrically isolated; see note below). It features ultra-thin profile and high thermal conductivity to PCB copper layers.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-PNP load switching applications.

Compared with PBSS4160PANP, PBSS5160PAP provides matched PNP characteristics essential for symmetrical load balancing, while DMT3006LPSQ-7 trades integration and qualification for raw current capacity - making PBSS5160PAP optimal for AEC-Q101-compliant dual-channel power management where thermal predictability and timing consistency are critical.

Availability

PBSS5160PAP is available at Aetrix Electronics and suitable for automotive body control modules, USB-C power delivery systems, and industrial battery management requiring stable component supply with guaranteed long-term manufacturability.

Supply support for PBSS5160PAP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components and energy-efficient power solutions.

PBSS5160PAP belongs to Nexperia's BISS transistor product line, engineered specifically for low-loss, thermally robust load switching in automotive, industrial, and portable power applications demanding AEC-Q101 compliance and space-constrained layouts.

FAQ

What is the maximum allowable junction temperature for PBSS5160PAP?

The absolute maximum junction temperature (T_j) is 150 °C, as defined in the Limiting Values table. Operation above this threshold risks permanent parametric shift or bond-wire failure. Derating curves in Figure 1 confirm 1.45 W total power dissipation is sustainable only up to 25 °C ambient on a 4-layer PCB with optimized collector pad - above that, linear derating applies.

Can PBSS5160PAP be used in parallel configurations for higher current handling?

No - the datasheet does not specify matching tolerance between the two integrated transistors for parallel operation. Parameter variation in h_FE, V_CEsat, and thermal coupling makes current sharing unpredictable. For >1 A loads, use separate discrete devices with external ballasting resistors or select a higher-rated single-die alternative like PBSS4160PAN.

Is the thermal pad (pins 7/8) electrically connected to any internal node?

Yes - pins 7 and 8 are internally shorted to pin 6 (collector of TR1) and pin 3 (collector of TR2), respectively, forming dual collector thermal vias. This connection is confirmed in the "Simplified outline" graphic (page 2) and must be soldered to a dedicated PCB copper pour tied to the collector net for effective heat extraction.

Does PBSS5160PAP support pulsed operation beyond its continuous I_C rating?

Yes - the peak collector current (I_CM) is rated at −1.5 A for single pulses ≤1 ms, provided duty cycle remains ≤2%. This capability is validated in Table 5 and supports brief inrush current suppression in motor start-up or capacitor charging scenarios without exceeding safe SOA boundaries.