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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar Transistor Arrays

Nexperia USA Inc. PBSS5220PAPSX

Name: PBSS5220PAPSX
Brand: Nexperia USA Inc.
SKU: PBSS5220PAPSX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PBSS5220PAPSX

Manufacturer:: Nexperia USA Inc.

Category:: Bipolar Transistor Arrays

Package:: 6-UDFN Exposed Pad

Datasheet:: PBSS5220PAPSX.pdf

Description:: TRANS 2PNP 20V 2A DFN2020D-6

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PBSS5220PAPSX from Nexperia is a dual PNP low V_CEsat transistor in a DFN2020D-6 (SOT1118D) package, designed for high-efficiency load switching in space-constrained applications. It delivers −2 A continuous collector current per transistor, −20 V V_CEO, and ultra-low saturation voltage down to −260 mV at −2 A/−200 mA drive - enabling reduced conduction loss in battery-powered power management circuits.

For engineers reviewing the PBSS5220PAPSX datasheet, PBSS5220PAPSX pinout, PBSS5220PAPSX application, or PBSS5220PAPSX equivalent, this device is selected for compact dual-PNP switching where thermal performance, AOI compatibility, and <260 mV V_CEsat at full rated current are critical design requirements.

Technical Context

This double PNP transistor integrates two matched, thermally coupled transistors in a single leadless DFN package with side-wettable flanks. Each transistor operates independently with open-base V_CEO = −20 V and supports pulsed I_CM = −3 A, enabling robust transient handling in motor and LED driver stages.

Its exposed thermal pad and 4-layer PCB-optimized R_th(j-a) of 131 K/W (with 1 cm² collector pad) directly supports high-power-density designs. The device exhibits h_FE = 100–150 at −2 A and maintains stable V_CEsat across −55 °C to +150 °C junction temperature range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−20 V - Maximum safe blocking voltage per transistor with base open; defines upper limit for load switch rail voltage.
I_C	−2 A - Continuous DC collector current per transistor; enables direct driving of 2 A loads without external heatsinking on 4-layer PCB.
V_CEsat	−260 mV (typ.) at −2 A/−200 mA - Minimizes power loss (0.52 W) and self-heating during saturation, critical for thermal budget in sealed enclosures.
h_FE	100–150 at −2 A - Ensures reliable saturation with modest base drive (200 mA), reducing gate-driver complexity in discrete switch designs.
R_th(j-a)	131 K/W (4-layer PCB, 1 cm² pad) - Enables >700 mW total power dissipation at T_amb = 25 °C, supporting sustained operation in industrial ambient conditions.
f_T	95 MHz - Supports fast switching (>100 kHz PWM) in LED dimming and DC-DC pre-regulator applications without significant gain roll-off.
C_c	25 pF - Low collector capacitance minimizes switching energy loss and EMI generation during turn-on/off transitions.

Pinout & Package

DFN2020D-6 (SOT1118D) is a 2.0 mm × 2.0 mm × 0.65 mm leadless, thermally enhanced package with side-wettable flanks for automated optical inspection and high-reliability reflow soldering.

Pin/Terminal	Circuit Role	Design Meaning
1	E1	Emitter of Transistor 1 - Connected to load return path; electrically tied to thermal pad in layout for optimal heat transfer.
2	B1	Base of Transistor 1 - Requires −200 mA drive for full saturation; routed with low-inductance trace to minimize switching overshoot.
3	C2	Collector of Transistor 2 - High-current output node; must be connected to power rail via wide copper pour for <3 A pulse handling.
4	E2	Emitter of Transistor 2 - Independent return path for second load; enables dual independent switching or complementary configuration.
5	B2	Base of Transistor 2 - Electrically isolated from B1; allows asynchronous control of two loads from separate MCU GPIOs.
6	C1	Collector of Transistor 1 - Primary high-side switch node; shares thermal pad with C2 for balanced power dissipation across both transistors.

Key Features

Feature	Design Value
Ultra-low V_CEsat	−260 mV typ. at −2 A reduces conduction loss by >40% vs. standard PNP transistors, extending battery runtime in portable devices.
Thermally enhanced DFN	Exposed copper pad and side-wettable flanks enable 131 K/W R_th(j-a) on 4-layer PCB - eliminates need for discrete thermal vias in most applications.
AOI-compatible footprint	Solderable side pads allow 100% automated optical inspection of solder joints, improving manufacturing yield in high-volume SMT lines.
Matched dual PNP pair	Integrated TR1/TR2 share thermal environment and process variation, ensuring consistent turn-on timing and current sharing in parallel configurations.
High h_FE at full current	h_FE ≥100 at −2 A enables direct MCU GPIO drive (e.g., 3.3 V/20 mA) with external base resistor, simplifying bill-of-materials.

Applications

LED Dimming Driver

Battery Protection Circuit

Use Scenario: Dual-channel constant-current LED driver for automotive interior lighting with independent brightness control.

IC Role / Device Role / Timing Role: PNP pair acts as high-side current switches, each controlling one LED string with PWM dimming up to 20 kHz.

Use Value: −260 mV V_CEsat limits power loss to ≤0.52 W per channel at 2 A, eliminating external heatsinks and enabling integration into slim lamp housings.

Use Scenario: Reverse-polarity and overcurrent protection in 12 V Li-ion battery packs for power tools.

IC Role / Device Role / Timing Role: One transistor serves as reverse-voltage blocking switch; the other implements fast shutdown during overcurrent events.

Use Value: Matched h_FE and V_CEsat ensure symmetrical response time (<245 ns turn-off), preventing latch-up during fault transients.

Motor Fan Control

USB-C Power Path Switch

Use Scenario: Bidirectional DC fan control in industrial HVAC controllers using H-bridge topology with discrete PNP/NPN pairs.

IC Role / Device Role / Timing Role: PBSS5220PAPSX provides the upper PNP legs; its 95 MHz f_T supports clean commutation at 25 kHz PWM frequency.

Use Value: 25 pF collector capacitance minimizes shoot-through risk and EMI during switching edges, meeting CISPR-25 Class 5 requirements.

Use Scenario: Dual-path power switch for USB-C PD negotiation, routing VBUS between source and sink ports based on role swap.

IC Role / Device Role / Timing Role: Each transistor handles one direction of VBUS path switching; side-wettable flanks ensure solder joint reliability under thermal cycling.

Use Value: 131 K/W R_th(j-a) sustains 1.5 A continuous current per path at 60 °C ambient without derating, supporting 30 W USB-C PD profiles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-PNP switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor NSS40201MR6T1G	−20 V V_CEO, −2 A I_C, but V_CEsat = −350 mV (typ.) at −2 A - 35% higher conduction loss.	Same DFN1616-6 package; lacks side-wettable flanks, limiting AOI capability and long-term solder joint reliability.	Select when cost sensitivity outweighs thermal performance; not recommended for >50 °C ambient or high-reliability production.
Diodes Incorporated DMMT3906-7-F	−40 V V_CEO, −200 mA I_C - lower current rating requires paralleling for 2 A loads, increasing board area and mismatch risk.	SC-74 package has higher R_th(j-a) (338 K/W), necessitating thermal vias and limiting power density.	Use only for low-current backup switching; unsuitable for primary load switching in battery or motor applications.

Compared with NSS40201MR6T1G and DMMT3906-7-F, PBSS5220PAPSX uniquely combines −2 A rating, −260 mV V_CEsat, side-wettable DFN packaging, and 131 K/W thermal resistance - making it the only option that meets all four requirements simultaneously for compact, high-efficiency dual-PNP switching.

Availability

PBSS5220PAPSX is available at Aetrix Electronics and suitable for battery-driven devices, LED lighting systems, and power management modules requiring stable component supply across automotive-adjacent industrial, consumer, and computing programs.

Supply support for PBSS5220PAPSX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors - delivering discrete, logic, and MOSFET solutions optimized for efficiency, miniaturization, and manufacturability.

PBSS5220PAPSX belongs to Nexperia's "Low V_CEsat Transistors" product line, engineered specifically for power-efficient load switching in space- and thermal-constrained applications such as portable electronics and smart lighting.

FAQ

What is the maximum allowable junction temperature for PBSS5220PAPSX?

The absolute maximum junction temperature (T_j) is 150 °C, as defined in the Absolute Maximum Ratings table. Operation above this temperature risks permanent parametric shift or failure. Derating curves in Figure 1 confirm usable power dissipation drops to zero at 150 °C ambient when mounted on standard FR4 PCBs.

Can PBSS5220PAPSX be used in automotive applications?

No - the datasheet revision history explicitly states this part was changed to non-automotive qualification in v.3 (20250930). It lacks AEC-Q101 stress testing and automotive-grade traceability. For automotive use, Nexperia recommends the −Q qualified variant PBSS5220PAPSH, which is functionally identical but fully qualified.

How does the side-wettable flank design improve manufacturing yield?

The side-wettable flanks on pins 1–6 enable automated optical inspection (AOI) to verify solder fillet formation and wetting quality - a capability impossible with traditional bottom-only thermal pads. This reduces field failures from head-in-pillow or insufficient solder joint formation in high-volume SMT lines.

Is the thermal pad electrically connected to any internal node?

Yes - the exposed thermal pad is internally connected to both collectors (C1 and C2), as confirmed by the simplified outline in Table 2 and package drawings. PCB layout must tie the pad to the high-side power rail (not ground) to maintain electrical integrity and maximize thermal conduction.

PBSS5220PAPSX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 6-UDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: 2 PNP (Dual)

Current - Collector (Ic) (Max):: 2A

Voltage - Collector Emitter Breakdown (Max):: 20V

Vce Saturation (Max) @ Ib, Ic:: 390mV @ 200mA, 2A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 160 @ 1A, 2V

Power - Max:: 370mW

Frequency - Transition:: 95MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: DFN2020D-6

PBSS5220PAPSX FAQ

1.How can I place an order for PBSS5220PAPSX through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS5220PAPSX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS5220PAPSX reliable?

The price and inventory of PBSS5220PAPSX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS5220PAPSX is usually 5 days.

3.What payment methods are accepted for PBSS5220PAPSX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS5220PAPSX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS5220PAPSX?

PBSS5220PAPSX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS5220PAPSX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS5220PAPSX?

For technical support, including PBSS5220PAPSX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS5220PAPSX requirements.

6.How does Aetrix verify that PBSS5220PAPSX is sourced from the original manufacturer or authorized distributors?

All PBSS5220PAPSX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS5220PAPSX meets industry standards.

7.What is the process for return or replacement of PBSS5220PAPSX?

All PBSS5220PAPSX units undergo pre-shipment inspection (PSI). If there is an issue with PBSS5220PAPSX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS5220PAPSX part is unused and in its original packaging.

Return procedure for PBSS5220PAPSX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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