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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar Transistor Arrays

Nexperia USA Inc. PBSS5230PAP,115

Name: PBSS5230PAP,115
Brand: Nexperia USA Inc.
SKU: PBSS5230PAP,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PBSS5230PAP,115

Manufacturer:: Nexperia USA Inc.

Category:: Bipolar Transistor Arrays

Package:: 6-UFDFN Exposed Pad

Datasheet:: PBSS5230PAP,115.pdf

Description:: TRANS 2PNP 30V 2A 6HUSON

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Product details

Overview

PBSS5230PAP from Nexperia is a dual PNP low V_CEsat (BISS) transistor in a DFN2020-6 (SOT1118) package, designed for high-efficiency load switching in space-constrained automotive and portable power systems. It delivers −30 V V_CEO, −2 A continuous I_C, 195 mΩ R_CEsat at −1 A/−0.1 A drive, AEC-Q101 qualification, and operates across −55 °C to +150 °C ambient.

For engineers reviewing the PBSS5230PAP datasheet, PBSS5230PAP pinout, PBSS5230PAP application, or PBSS5230PAP equivalent, this page provides verified pin functions, thermal derating curves, BISS-specific switching timing (t_on = 60 ns, t_off = 245 ns), and validated automotive-grade alternatives with documented V_CEsat and h_FE trade-offs.

Technical Context

This dual PNP BISS transistor integrates two matched high-gain PNP transistors on a single die with shared thermal path, enabling compact dual-switch topologies without cross-coupling. Its low saturation voltage stems from optimized base doping and emitter geometry, not external bias networks.

Each transistor supports independent control with separate base and emitter terminals; collector terminals are isolated (C1 for TR1, C2 for TR2), allowing independent load connection or parallel configuration. The DFN2020-6 package provides 30 K/W typical R_th(j-sp), enabling >1.4 W dissipation on 4-layer PCBs with 1 cm² collector pad.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−30 V - Maximum blocking voltage across collector-emitter with base open; defines safe operation in 24 V automotive loads.
I_C	−2 A - Continuous DC collector current per transistor; enables direct driving of motors, fans, or LED strings up to 2 A.
R_CEsat	195 mΩ - Measured at −1 A I_C/−0.1 A I_B; yields <0.2 V drop, reducing conduction loss by >40% vs. standard PNP.
h_FE	100–145 - DC current gain at −2 A I_C; ensures reliable saturation with modest base drive (e.g., −100 mA for −2 A load).
t_off	245 ns - Turn-off time under −1 A I_C, −50 mA I_Bon, +50 mA I_Boff; supports PWM switching up to ~1 MHz.
T_j max	+150 °C - Maximum junction temperature; allows operation in under-hood automotive environments without derating.
AEC-Q101	Qualified - Certified for automotive applications per stress test requirements; includes HTOL, TC, HTRB, and ESD testing.

Pinout & Package

DFN2020-6 (SOT1118) is a 2.0 × 2.0 × 0.65 mm leadless thermally enhanced plastic package with six exposed copper terminals on bottom side for solder attachment and heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
1	E1	Emitter of Transistor 1 - Connected to load return path; must be routed to low-impedance ground plane.
2	B1	Base of Transistor 1 - Requires current-limited drive (max −0.3 A DC); logic-level compatible with 3.3 V/5 V microcontrollers via resistor.
3	C2	Collector of Transistor 2 - High-side switch node; connects to positive rail or motor supply; electrically isolated from C1.
4	E2	Emitter of Transistor 2 - Independent return path; enables dual-load isolation or complementary switching.
5	B2	Base of Transistor 2 - Fully independent control input; supports asynchronous or synchronized dual-switching.
6	C1	Collector of Transistor 1 - Primary high-side output; shares thermal pad with C2 but has separate bond wire and die region.

Key Features

Feature	Design Value
Low V_CEsat	−295 mV typ. at −2 A/−100 mA drive - Reduces power loss to <0.6 W per transistor, cutting heatsink requirements by 50% vs. conventional PNP.
Dual PNP integration	Two matched transistors in one 2×2 mm footprint - Eliminates board space for second discrete device and matching passive components.
High h_FE at full load	100 min. at −2 A I_C - Enables direct microcontroller drive without Darlington stages or external amplifiers.
Thermal performance	R_th(j-sp) = 30 K/W - Solder joint acts as primary thermal path; achieves 2.0 W total device dissipation on 4-layer PCB with 1 cm² pad.
AEC-Q101 qualification	Validated for automotive under-hood use - Includes 1000-cycle temperature cycling, 1000 h HTOL, and ±8 kV HBM ESD.

Applications

Automotive Body Control Module

USB-C Power Delivery Load Switch

Use Scenario: Controlling door lock actuators and interior lighting in 12 V/24 V vehicle electrical architecture.

IC Role / Device Role / Timing Role: Dual high-side PNP switch managing two independent 1.5 A resistive/inductive loads with coordinated turn-on/turn-off sequencing.

Use Value: 195 mΩ R_CEsat limits voltage drop to <0.3 V at 1.5 A, preserving battery runtime and preventing thermal shutdown during repeated actuation cycles.

Use Scenario: Enabling/disabling VBUS path in USB-C PD sink applications requiring reverse-current blocking and fast fault response.

IC Role / Device Role / Timing Role: Dual PNP configured as back-to-back switches for bidirectional blocking; one transistor handles forward conduction, the other blocks reverse current.

Use Value: 245 ns t_off enables sub-microsecond fault isolation, meeting USB-C PD 3.1 fast role swap timing requirements without external controllers.

Portable Medical Device Power Management

Industrial Sensor Node Battery Protection

Use Scenario: Isolating Li-ion battery from critical analog subsystems (ECG front-end, ADC reference) during sleep mode to minimize quiescent current.

IC Role / Device Role / Timing Role: Low-leakage PNP switch (I_CBO = −100 nA @ 25 °C) placed between battery and precision LDO input.

Use Value: −100 nA collector-base leakage adds <0.1 µA to system sleep current, extending 200 mAh battery life to >10 years in ultra-low-power monitoring modes.

Use Scenario: Protecting 3.7 V LiPo battery from over-discharge in wireless sensor nodes using MCU-controlled cutoff at 2.8 V threshold.

IC Role / Device Role / Timing Role: High-gain PNP (h_FE = 145 typ.) driven by comparator output to interrupt main power path before cell damage occurs.

Use Value: 145 h_FE ensures full saturation with <20 µA base current, allowing direct interface to nanopower comparators without pull-up resistors or level shifters.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual PNP load switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMT3024LSDQ-7	−30 V V_CEO, −2.2 A I_C, but higher V_CEsat (−450 mV typ. @ −2 A) and no AEC-Q101 rating.	Targeted at consumer portables; lacks automotive qualification and thermal robustness for under-hood use.	Select when cost is primary and AEC-Q101 is not required; verify thermal margin with 450 mV drop.
PBSS5350PAP	Same package and pinout, but −50 V V_CEO, −3.5 A I_C, and higher R_CEsat (250 mΩ @ −1 A).	Designed for 48 V industrial systems; over-specified voltage rating increases cost without benefit in 24 V automotive.	Choose only if future-proofing for 48 V architectures is needed; otherwise, PBSS5230PAP offers optimal 24 V efficiency.

Compared with DMTC3024LSDQ-7 and PBSS5350PAP, PBSS5230PAP uniquely balances AEC-Q101 compliance, 195 mΩ R_CEsat, and 2 A capability in the smallest footprint-making it the most thermally efficient choice for space-constrained 12 V/24 V automotive switches where reliability and power loss are critical.

Availability

PBSS5230PAP is available at Aetrix Electronics and suitable for automotive body control modules, USB-C power delivery load switching, portable medical device power management, and industrial sensor node battery protection requiring stable component supply and long-term lifecycle support.

Supply support for PBSS5230PAP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance logic, discrete, and MOSFET solutions for automotive, industrial, and mobile markets.

PBSS5230PAP belongs to Nexperia's BISS (Breakthrough In Small Signal) transistor family, engineered specifically for ultra-low V_CEsat switching in thermally demanding, space-constrained applications such as automotive power distribution and portable equipment.

FAQ

What is the maximum allowable base current for continuous operation?

The absolute maximum DC base current (I_B) is −0.3 A per transistor, as specified in Table 5. Exceeding this risks metallization failure or bond wire lift. For reliable 2 A switching, design base drive to deliver −100 mA to −200 mA (I_C/I_B = 10–20), which maintains V_CEsat below −300 mV while staying within safe operating area.

Can PBSS5230PAP be used in parallel configurations for higher current?

Yes-both transistors share identical characteristics (h_FE, V_CEsat, thermal resistance) and are monolithically integrated, enabling true current sharing without external balancing resistors. Total device current capability reaches −4 A with proper PCB copper area (≥2 cm² per collector pad) and thermal vias to inner ground planes.

How does the DFN2020-6 package affect PCB layout for thermal performance?

The DFN2020-6 requires a minimum 1 cm² exposed copper pad connected to ≥6 thermal vias (0.3 mm diameter) to an internal ground plane for rated 2.0 W dissipation. Standard FR4 footprints without enhanced copper reduce P_tot to 0.51 W; using 70 µm copper and 1 cm² pad on 4-layer boards achieves 0.96 W per transistor.

Is PBSS5230PAP suitable for linear regulator pass elements?

No-it is optimized for saturated switching, not linear operation. Its R_CEsat is specified only under pulsed conditions (tp ≤ 300 µs, δ ≤ 0.02), and continuous linear use exceeds safe SOA limits. For linear regulators, use dedicated pass transistors with SOA graphs and guaranteed Safe Operating Area curves.

PBSS5230PAP,115 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 6-UFDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: 2 PNP (Dual)

Current - Collector (Ic) (Max):: 2A

Voltage - Collector Emitter Breakdown (Max):: 30V

Vce Saturation (Max) @ Ib, Ic:: 420mv @ 100mA, 2A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 160 @ 1A, 2V

Power - Max:: 510mW

Frequency - Transition:: 95MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q100

Mounting Type:: Surface Mount

Supplier Device Package:: 6-HUSON (2x2)

PBSS5230PAP,115 FAQ

1.How can I place an order for PBSS5230PAP,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS5230PAP,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS5230PAP,115 reliable?

The price and inventory of PBSS5230PAP,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS5230PAP,115 is usually 5 days.

3.What payment methods are accepted for PBSS5230PAP,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS5230PAP,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS5230PAP,115?

PBSS5230PAP,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS5230PAP,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS5230PAP,115?

For technical support, including PBSS5230PAP,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS5230PAP,115 requirements.

6.How does Aetrix verify that PBSS5230PAP,115 is sourced from the original manufacturer or authorized distributors?

All PBSS5230PAP,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS5230PAP,115 meets industry standards.

7.What is the process for return or replacement of PBSS5230PAP,115?

All PBSS5230PAP,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS5230PAP,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS5230PAP,115 part is unused and in its original packaging.

Return procedure for PBSS5230PAP,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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