Diodes Incorporated PDS760-13

Overview

PDS760-13 from Diodes Incorporated is a 7A, 60V Schottky barrier rectifier in PowerDI5 package, featuring 0.41V forward voltage at 3.5A/125°C, 275A non-repetitive surge capability, and guard ring die construction for transient protection-used in high-frequency inverters, free-wheeling circuits, and polarity protection in DC power supplies.

For engineers reviewing the PDS760-13 datasheet, PDS760-13 pinout, PDS760-13 application, or PDS760-13 equivalent, key selection criteria include forward voltage at elevated temperature, thermal resistance under defined PCB layouts (R_θJA = 45–85°C/W), reverse leakage at 125°C, and JEDEC-qualified automotive-grade reliability (AEC-Q compliant variant PDS760Q available).

Technical Context

The PDS760-13 employs a planar Schottky barrier structure with guard ring termination to suppress edge breakdown and improve transient robustness. Its low V_F (0.41V typ. @ 3.5A, 125°C) enables high-efficiency operation in switching power supplies up to several hundred kHz.

Thermal performance is layout-dependent: R_θJA ranges from 45°C/W (optimized polyimide PCB, large cathode pad) to 85°C/W (standard FR-4), while R_θJS remains fixed at 1.5°C/W-enabling accurate junction temperature prediction when solder-point temperature is monitored.

Key Specifications

Pinout & Package

Package: PowerDI5 - surface-mount, single-die, dual-terminal plastic package with exposed cathode pad for enhanced thermal transfer. Dimensions: 3.966 × 6.51 × 1.10 mm (L × W × A), weight 0.096 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with SS7P6L-13 and SB760-E3/52, the PDS760-13 delivers superior thermal performance (R_θJS = 1.5°C/W), lower high-temp V_F, and AEC-Q-aligned reliability-making it optimal for thermally demanding, automotive-adjacent, or high-reliability industrial power stages.

Availability

PDS760-13 is available at Aetrix Electronics and suitable for high-frequency inverters, automotive body electronics, and industrial PLC output stages requiring stable component supply, JEDEC-qualified reliability, and consistent thermal behavior across production lots.

Supply support for PDS760-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for industrial, computing, and automotive markets.

The PowerDI® rectifier product line targets high-current, surface-mount power conversion applications where low V_F, robust surge capability, and layout-optimized thermal performance are critical-designed specifically for next-generation compact DC-DC and motor-control systems.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The PDS760-13 has an operating junction temperature range of –65°C to +150°C. For reliable long-term operation, Diodes recommends limiting T_J to ≤140°C under steady-state conditions, based on accelerated life testing and thermal runaway margins observed in PowerDI5-packaged Schottky devices.

Can PDS760-13 be used as a direct replacement for PDS760Q in non-automotive designs?

Yes-PDS760-13 and PDS760Q share identical electrical specifications, thermal characteristics, and mechanical dimensions. The Q suffix denotes AEC-Q200 qualification and automotive-specific test reporting; the -13 version meets all functional requirements for industrial/commercial use without automotive test documentation.

How does the PowerDI5 package compare thermally to SMA or SMPC packages at 7A load?

At 7A, PowerDI5 achieves R_θJA = 45°C/W with optimized polyimide PCB layout-~30% lower than typical SMA (R_θJA ≈ 65°C/W) and ~45% lower than SMPC (R_θJA ≈ 85°C/W)-due to its large exposed cathode pad acting as both thermal sink and ground plane.

Is the guard ring structure visible in the die photograph, and does it affect capacitance?

Yes, the guard ring is a physical diffusion feature surrounding the active Schottky junction, confirmed in Diodes' cross-sectional die analysis. It increases total capacitance slightly (C_T ≈ 200 pF @ 0V, Fig. 4), but maintains low C_T vs. voltage slope-critical for high-frequency freewheeling where dC/dV impacts ringing.