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Nexperia USA Inc. PMBD6100,215
- Part No.:
- PMBD6100,215
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
PMBD6100,215.pdf
- Description:
- DIODE ARRAY GP 70V 215MA TO236AB
- Quantity:
- Payment:
- Shipping:
Inventory:2,988
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Product details
Overview
PMBD6100 from Nexperia is a high-speed double diode in SOT23 package with common cathode configuration, rated for 85 V repetitive peak reverse voltage, 450 mA peak forward current, and 4 ns reverse recovery time; used in compact surface-mounted switching circuits such as signal routing and level translation in portable consumer electronics.
For engineers reviewing the PMBD6100 datasheet, PMBD6100 pinout, PMBD6100 application, or PMBD6100 equivalent, key selection criteria include reverse recovery speed, dual-diode thermal derating under shared cathode layout, low capacitance (1.5 pF), and FR4-board power dissipation limits (250 mW).
Technical Context
The PMBD6100 integrates two planar-technology silicon switching diodes sharing a single cathode terminal, enabling compact dual-path rectification or steering without inter-device mismatch. Its 4 ns trr and 1.5 pF Cd support >100 MHz signal switching in RF front-ends and high-frequency DC-DC feedback paths.
Thermal design requires attention to junction-to-ambient resistance (500 K/W on FR4), with continuous forward current derated to 125 mA when both diodes operate simultaneously - confirmed by Fig.2's dual-diode loaded curve at Tamb = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 85 V - supports input transients up to 85 V without avalanche breakdown in clamping or protection circuits |
| trr | 4 ns - enables clean switching in 100+ MHz clock distribution and fast data line steering |
| Cd | 1.5 pF at 1 MHz, VR = 0 V - minimizes signal loading in RF detector and mixer bias networks |
| IF (dual) | 125 mA continuous - maximum simultaneous conduction per diode before thermal shutdown on FR4 PCB |
| VF @ 100 mA | 0.85–1.1 V - defines forward drop impact on power efficiency in low-voltage logic-level translators |
| Rth j-a | 500 K/W - requires thermal relief pads or reduced ambient temperature to sustain full load beyond 25 °C |
Pinout & Package
Package: SOT23 (TO-236AB), plastic surface-mounted, 3-lead, dimensions per IEC/JEDEC outline (D = 2.8 mm, E = 1.4 mm, Lp = 1.2 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode of Diode 1 (A1) | Independent anode connection for first diode path; routed separately for dual-input OR-ing or polarity selection |
| 2 | Anode of Diode 2 (A2) | Independent anode connection for second diode path; enables differential signal clamping or dual-rail protection |
| 3 | Common Cathode (K) | Shared output node - simplifies PCB layout but couples thermal and current paths between diodes |
Key Features
| Feature | Design Value |
|---|---|
| High-speed switching | 4 ns reverse recovery time ensures minimal switching distortion in >100 MHz digital signal routing |
| Low diode capacitance | 1.5 pF at zero bias reduces insertion loss and phase shift in RF detector and antenna switch bias lines |
| Common-cathode dual configuration | Reduces component count and board area vs. discrete diodes in dual-rail clamp or OR-gate applications |
| SOT23 footprint compatibility | Standardized 3-pin SMD package enables automated placement and reflow compatibility with legacy designs |
Applications
| USB Data Line Protection | RF Signal Detector Biasing |
|---|---|
Use Scenario: Clamping transient voltages on USB D+/D− lines during hot-plug events or ESD discharge. IC Role / Device Role / Timing Role: Dual-diode clamp with common cathode tied to VCC, limiting voltage swing to safe levels while preserving signal integrity. Use Value: 4 ns trr prevents signal overshoot distortion; 1.5 pF Cd avoids bandwidth degradation in 480 Mbps High-Speed USB. | Use Scenario: Providing temperature-stable bias current to Schottky detector diodes in 2.4 GHz Wi-Fi front-end modules. IC Role / Device Role / Timing Role: Low-capacitance dual anode path supplies matched bias to parallel detector legs while minimizing RF leakage. Use Value: 1.5 pF Cd and <100 nA IR at 50 V ensure minimal detector loading and stable DC offset over temperature. |
| Logic-Level Translation | Power Rail OR-ing |
Use Scenario: Bidirectional level shifting between 1.8 V and 3.3 V I/O domains in portable SoC interfaces. IC Role / Device Role / Timing Role: Dual-anode configuration allows independent pull-up to each rail, with common cathode connected to signal line. Use Value: 0.85–1.1 V VF at 100 mA ensures predictable voltage drop across translation path, supporting sub-ns timing margins. | Use Scenario: Combining two independent 3.3 V power sources (e.g., battery + USB) with automatic source selection. IC Role / Device Role / Timing Role: Anode-to-source, common-cathode-to-load configuration provides passive OR-ing with minimal forward drop. Use Value: 125 mA per diode rating and 0.85 V typical VF enable efficient power combining without active control circuitry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed dual-diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAT54C,215 | Lower VRRM (30 V), higher Cd (10 pF), same SOT23 package and common-cathode pinout | Not suitable for >30 V clamping; higher capacitance limits use above 10 MHz | Select BAT54C only for low-voltage (<3.3 V), low-frequency (<10 MHz) logic clamping where cost is critical |
| PMESD9V0S1BA,115 | ESD-rated (IEC 61000-4-2 Level 4), same VRRM (85 V), but higher VF (1.25 V min) and slower trr (10 ns) | Designed for ESD protection, not general switching; higher forward drop increases power loss in continuous conduction | Choose PMESD9V0S1BA only when system-level ESD compliance is mandatory and switching speed is secondary |
Compared with BAT54C and PMESD9V0S1BA, the PMBD6100 uniquely balances 85 V standoff, 4 ns speed, and 1.5 pF capacitance - making it optimal for high-frequency signal steering where both voltage margin and bandwidth matter.
Availability
PMBD6100 is available at Aetrix Electronics and suitable for USB interface protection, RF detector biasing, and logic-level translation requiring stable component supply across industrial and consumer production programs.
Supply support for PMBD6100 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, and consumer markets.
The PMBD6100 belongs to Nexperia's high-speed switching diode product line, engineered specifically for space-constrained, high-frequency surface-mount applications demanding fast recovery and low parasitic capacitance.
FAQ
What is the maximum continuous forward current when both diodes operate simultaneously?
The PMBD6100 is rated for 125 mA continuous forward current when both diodes are loaded, as specified in the Limiting Values table under "double diode loaded" condition and confirmed by Fig.2's derating curve on FR4 PCB. Exceeding this causes junction temperature to exceed 150 °C due to shared thermal path via the common cathode.
Can PMBD6100 be used in place of a single high-speed diode?
Yes - Pin 1 and Pin 3 (A1–K) or Pin 2 and Pin 3 (A2–K) form fully functional independent diode paths. The unused anode must be left unconnected or tied to a non-driving potential; no internal coupling exists between A1 and A2 except through the shared cathode node.
Is the 4 ns reverse recovery time guaranteed across temperature?
No - the 4 ns trr is specified at Tj = 25 °C, IF = 10 mA → IR = 10 mA, RL = 100 Ω. Recovery time increases with junction temperature; Fig.7 shows test conditions but does not provide temperature-dependent curves. For designs operating above 85 °C, derating or characterization is required.
Does the marking code ∗5B indicate RoHS compliance?
Yes - all PMBD6100 devices manufactured after Nexperia's transition (2017 onward) comply with RoHS Directive 2011/65/EU. The ∗5B marking reflects production location (Hong Kong/Malaysia/China) and date code; RoHS status is verified per Nexperia's public compliance documentation and applies regardless of manufacturing site.
PMBD6100,215 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 70 V
- Current - Average Rectified (Io) (per Diode):
- 215mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1.1 V @ 100 mA
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 100 nA @ 50 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-236AB
PMBD6100,215 FAQ
1.How can I place an order for PMBD6100,215 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMBD6100,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMBD6100,215 reliable?
The price and inventory of PMBD6100,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMBD6100,215 is usually 5 days.
3.What payment methods are accepted for PMBD6100,215?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMBD6100,215 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMBD6100,215?
PMBD6100,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMBD6100,215 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMBD6100,215?
For technical support, including PMBD6100,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMBD6100,215 requirements.
6.How does Aetrix verify that PMBD6100,215 is sourced from the original manufacturer or authorized distributors?
All PMBD6100,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMBD6100,215 meets industry standards.
7.What is the process for return or replacement of PMBD6100,215?
All PMBD6100,215 units undergo pre-shipment inspection (PSI). If there is an issue with PMBD6100,215, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMBD6100,215 part is unused and in its original packaging.
Return procedure for PMBD6100,215:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PMBD6100,215 Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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