Nexperia USA Inc. PMBT2222AYS-QX

Overview

PMBT2222AYS-QX from Nexperia is a double NPN bipolar junction transistor (BJT) in a single SOT363-3 (TSSOP6) package, designed for high-density switching and linear amplification in automotive-grade circuits. It delivers 600 mA collector current per transistor, 40 V V_CEO, DC current gain (h_FE) of 100–300 at I_C = 150 mA, and is AEC-Q101 qualified for under-hood control modules.

For engineers reviewing the PMBT2222AYS-QX datasheet, PMBT2222AYS-QX pinout, PMBT2222AYS-QX application, or PMBT2222AYS-QX equivalent, this dual-transistor device supports compact dual-channel switching in space-constrained PCB layouts, offers verified thermal performance on FR4 with 300 mW per device (standard footprint), and provides fast switching (t_on ≤ 35 ns, t_off ≤ 250 ns) for PWM-driven loads.

Technical Context

This device integrates two independent NPN transistors sharing a common SOT363-3 thermally optimized leadframe. Each transistor features V_CEO = 40 V, V_CBO = 75 V, and V_EBO = 6 V, enabling robust operation in 12 V/24 V automotive supply rails with transient margin. The matched pair supports symmetrical dual-switch topologies without discrete component matching.

Thermal resistance is specified as 417 K/W (per transistor, standard FR4) and 227 K/W (per device, enhanced pad), confirming suitability for sustained 500 mA operation at T_amb ≤ 85 °C. Switching characteristics are characterized with defined pulse conditions (t_p ≤ 300 µs, duty δ ≤ 0.02), ensuring repeatability in digital control applications.

Key Specifications

Pinout & Package

SOT363-3 (TSSOP6) is a 6-pin, surface-mount plastic package with 0.65 mm pitch, 2.2 mm × 1.35 mm footprint, and exposed thermal pad-compatible layout. Designed for high-density routing and reflow compatibility on standard FR4 PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual NPN switching applications.

Compared with BC847BDW1T3G, PMBT2222AYS-QX delivers 6× higher current and automotive qualification; compared with DMN3028LSD-13, it supports analog gain and operates reliably down to 1.5 V V_BE, making it preferable for mixed-signal control stages with limited gate drive headroom.

Availability

PMBT2222AYS-QX is available at Aetrix Electronics and suitable for automotive body control modules, industrial PLC output stages, and USB-C power delivery subsystems requiring stable component supply and long-term lifecycle assurance.

Supply support for PMBT2222AYS-QX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete and logic devices for automotive, industrial, and consumer markets.

This part belongs to Nexperia's AEC-Q101-qualified small-signal transistor portfolio, engineered specifically for space-constrained, thermally demanding automotive control nodes requiring dual-channel integration and proven field reliability.

FAQ

What is the maximum allowable junction temperature for PMBT2222AYS-QX?

The absolute maximum junction temperature (T_j) is 150 °C, as defined in the Absolute Maximum Ratings table. Operation above this limit risks permanent parametric shift or failure. Derating curves in Figure 1 confirm usable power decreases linearly above 25 °C ambient, with full 300 mW per device permitted only at T_amb ≤ 25 °C on standard FR4.

Can PMBT2222AYS-QX be used in linear amplification mode?

Yes - its DC current gain (h_FE) is specified from 40 to 300 across I_C = 100 µA to 500 mA, and V_BE characteristics (Figure 6) show stable behavior from −55 °C to 150 °C. Linear operation is supported at V_CE ≥ 1 V and I_C ≤ 600 mA, with noise figure of 4 dB at 1 kHz enabling low-noise preamplifier stages.

How does the SOT363-3 package differ from standard SOT363?

The SOT363-3 variant features tighter dimensional tolerances and an updated thermal pad layout optimized for improved solder joint reliability and 227 K/W R_th(j-a) with 1 cm² collector pad (vs. 313 K/W for standard footprint). Revision history confirms this change was implemented in v.2 (July 2026) to enhance thermal performance in automotive under-hood environments.

Is there crosstalk between the two transistors inside the package?

No measurable electrical crosstalk exists - pinning data confirms complete isolation: TR1 uses pins 1 (E), 2 (B), 6 (C); TR2 uses pins 4 (E), 5 (B), 3 (C). Thermal coupling is present (shared die substrate), but electrical isolation exceeds 10⁹ Ω between collectors/emitters/bases per characterization in Table 7 (ICBO/IEBO < 10 nA), ensuring independent channel operation.