Nexperia USA Inc. PMBT2907AYSX

Overview

PMBT2907AYSX from Nexperia is a double PNP bipolar junction transistor in SOT363-3 (TSSOP6) package, rated for −60 V V_CEO, −600 mA I_C, and AEC-Q101 qualified for automotive use; it delivers h_FE = 100–300 at −150 mA, V_CE(sat) ≤ −1.6 V at −500 mA, and switching times under 400 ns for dual-channel discrete logic-level switching in space-constrained PCBs.

For engineers reviewing the PMBT2907AYSX datasheet, PMBT2907AYSX pinout, PMBT2907AYSX application, or PMBT2907AYSX equivalent, this page provides verified pin mapping, thermal derating curves, dual-transistor timing behavior, AEC-Q101 qualification status, and direct alternatives with documented V_CEO/I_C/package alignment.

Technical Context

This device integrates two independent PNP transistors sharing no internal connection-each with separate emitter, base, and collector terminals-enabling dual low-side switch or complementary pair configurations. Its −60 V V_CEO and −800 mA I_CM support robust operation in 24 V automotive loads and industrial IO drivers.

Thermal resistance is specified per transistor (R_th(j-a) = 500 K/W standard footprint; 313 K/W enhanced pad) and per device (417–227 K/W), confirming its suitability for thermally dense layouts where dual discrete switching must coexist without forced airflow.

Key Specifications

Pinout & Package

SOT363-3 (TSSOP6) is a 6-pin, surface-mount plastic package with 0.65 mm pitch, 2.2 mm × 1.35 mm body, and exposed thermal pad-compatible layout per Nexperia's recommended footprint (Fig. 13).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual PNP switching applications.

Compared with DMT3002LPS and BC857BDW1T1G, PMBT2907AYSX uniquely combines −60 V rating, −600 mA capability, and AEC-Q101 qualification in SOT363-3-making it the sole option for dual-channel automotive load switching where both voltage headroom and thermal robustness are mandatory.

Availability

PMBT2907AYSX is available at Aetrix Electronics and suitable for automotive door modules, industrial PLC output stages, USB-C power delivery interfaces, and medical infusion pump controls requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for PMBT2907AYSX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and mobile markets.

This part belongs to Nexperia's AEC-Q101-qualified bipolar transistor family, engineered specifically for space-constrained, high-reliability dual-switching applications in harsh environments where discrete control and thermal predictability are non-negotiable.

FAQ

What is the maximum allowable junction temperature for PMBT2907AYSX?

The absolute maximum junction temperature (T_j) is 150 °C, validated per IEC 60134 limiting values. Operation above this threshold risks permanent degradation of h_FE and increased leakage. Derating begins at 25 °C ambient, with total device power dissipation dropping to 250 mW at 85 °C ambient per Figure 1.

Can PMBT2907AYSX be used as a direct replacement for PMBT2907A in legacy designs?

Yes-PMBT2907AYSX supersedes PMBT2907A with identical electrical specifications and pinout, but uses the updated SOT363-3 package (vs. original SOT363). The mechanical outline differs slightly (tighter tolerances, improved thermal pad definition), requiring minor PCB land pattern review per Figure 13.

Does the device support parallel operation of both transistors for higher current?

No-TR1 and TR2 share no internal connection, but their parameters (h_FE, V_CE(sat)) exhibit ±20% unit-to-unit variation. Parallel use without individual current-sensing resistors risks thermal imbalance and premature failure; it is not characterized or recommended in the datasheet.

What is the typical storage time (t_s) and how does it affect switching performance?

Typical storage time is 300 ns at I_C = −150 mA, I_B(on) = −15 mA, and I_B(off) = 15 mA. This delay-caused by minority carrier removal from the base region-directly limits maximum usable PWM frequency; exceeding 300 kHz may cause incomplete turn-off and shoot-through in bridge configurations.