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Nexperia USA Inc. PMBT3904RAZ
- Part No.:
- PMBT3904RAZ
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays
- Package:
- 6-XFDFN Exposed Pad
- Datasheet:
-
PMBT3904RAZ.pdf
- Description:
- TRANS 2NPN 40V 200MA DFN1412-6
- Quantity:
- Payment:
- Shipping:
Inventory:4,897
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Product details
Overview
PMBT3904RAZ from Nexperia is a double NPN switching transistor in a DFN1412-6 (SOT1268) leadless package, rated for 40 V VCEO, 200 mA IC, and 300 MHz fT. It integrates two matched NPN transistors in one ultra-thin (0.47 mm body height) thermal-enhanced SMD package, enabling compact dual-switching functions in space-constrained DC-DC bias networks and LED driver stages.
For engineers reviewing the PMBT3904RAZ datasheet, PMBT3904RAZ pinout, PMBT3904RAZ application, or PMBT3904RAZ equivalent, this device supports high-density board layouts requiring dual low-VCE(sat) switching with validated thermal resistance (Rth(j-a) = 261 K/W per device on FR4) and fast turn-off (toff ≤ 250 ns).
Technical Context
This dual NPN transistor operates as two independent switching elements sharing a common thermal die but electrically isolated terminals. Each transistor supports VCEO = 40 V, IC = 200 mA, and exhibits hFE = 100–300 at IC = 10 mA, enabling reliable saturation in low-voltage logic-level drive circuits.
Its DFN1412-6 package features six exposed-copper terminals with defined pin mapping (E1/B1/C2/E2/B2/C1), optimized for thermal dissipation (Ptot = 480 mW per device) and high-frequency performance (fT = 300 MHz), making it suitable for multi-rail power sequencing and dual-channel signal routing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 40 V - Maximum collector-emitter voltage before breakdown; defines safe operating range in 24 V and 36 V supply rails. |
| IC | 200 mA - Continuous collector current per transistor; supports driving small relays, LEDs, or logic gates without external heat sinking. |
| hFE | 100–300 - DC current gain at VCE = 1 V, IC = 10 mA; ensures robust base drive margin for digital switching applications. |
| VCE(sat) | 750 mV max at IC = 10 mA, IB = 1 mA - Low saturation voltage minimizes conduction loss in battery-powered load switches. |
| fT | 300 MHz - Transition frequency confirms suitability for >10 MHz PWM control loops and RF bias networks. |
| Rth(j-a) | 261 K/W - Junction-to-ambient thermal resistance on FR4 PCB; enables stable operation up to +85 °C ambient without derating. |
Pinout & Package
Package: DFN1412-6 (SOT1268), 1.4 mm × 1.2 mm × 0.47 mm body, leadless, thermally enhanced plastic SMD package with exposed copper pad for improved heat transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter of TR1 | Low-impedance current sink node for first transistor; connects directly to ground or reference plane in switch configurations. |
| 2 | Base of TR1 | Control input for TR1; requires ~1 mA base drive to saturate TR1 at 10 mA collector load. |
| 3 | Collector of TR2 | High-side output node for second transistor; routed to load or next-stage input in dual-switch topologies. |
| 4 | Emitter of TR2 | Current return path for TR2; electrically isolated from E1 but shares thermal die for coordinated thermal management. |
| 5 | Base of TR2 | Independent control input for TR2; allows asynchronous or complementary switching relative to TR1. |
| 6 | Collector of TR1 | Primary output node for TR1; used in standard common-emitter switching or current mirror configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-small footprint | 1.4 mm × 1.2 mm area reduces PCB real estate by >60% vs. SO-8 dual transistors, enabling wearables and IoT sensor modules. |
| Thermal enhancement | Exposed copper pad and 261 K/W Rth(j-a) allow 480 mW total dissipation-2× higher than comparable SOT-363 devices. |
| Dual-transistor matching | Matched hFE and VBE(sat) across TR1/TR2 enable precise current mirroring and balanced load sharing in dual-path designs. |
| Fast switching | toff ≤ 250 ns and ton ≤ 70 ns support PWM frequencies up to 1 MHz without significant duty-cycle distortion. |
Applications
| LED Driver Control | DC-DC Converter Bias |
|---|---|
|
Use Scenario: Dual-color LED sequencing in smart lighting modules where independent anode/cathode control is required. IC Role / Device Role / Timing Role: Dual NPN switch providing synchronized on/off control of red and green LEDs using shared microcontroller GPIOs. Use Value: Eliminates need for two discrete SOT-23 transistors, reducing BOM count and layout area while maintaining <1 µs inter-channel skew. |
Use Scenario: Enabling/disabling auxiliary bias windings in synchronous buck converters during light-load burst-mode operation. IC Role / Device Role / Timing Role: Dual switch controlling gate-drive transformer primary paths to isolate bias circuitry during standby. Use Value: Leverages matched VCE(sat) (≤750 mV) to minimize dropout loss and ensure simultaneous turn-on/turn-off of both bias paths. |
| Logic-Level Signal Routing | Multi-Rail Power Sequencing |
|
Use Scenario: Level-shifting and isolation between 1.8 V FPGA I/O and 3.3 V peripheral buses in industrial edge controllers. IC Role / Device Role / Timing Role: Dual NPN configured as emitter followers to translate and buffer bidirectional control signals. Use Value: 300 MHz fT and <50 ns fall time preserve signal integrity up to 25 MHz data rates without added capacitance. |
Use Scenario: Controlling power-up order of 5 V, 3.3 V, and 1.2 V rails in FPGA-based embedded systems with strict sequencing requirements. IC Role / Device Role / Timing Role: Dual transistor pair acting as independent enable switches for LDO inputs, triggered by sequencer outputs. Use Value: Matched hFE ensures consistent turn-on thresholds across rails, eliminating timing jitter in power-up sequences. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual NPN switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC846BDW1T1G | SO-7 (SOT-363) package; 65 V VCEO; 100 mA IC; hFE = 200–450; Rth(j-a) = 300 K/W | Lower current rating and higher thermal resistance limit use in >50 mA continuous loads or high-ambient environments. | Select when higher VCEO margin is needed and board space permits larger package. |
| EMX16T2R | DFN1006-3 (0.99 mm × 1.0 mm); single NPN + diode; 50 V VCEO; 150 mA IC; no dual-transistor topology | Lacks second transistor; cannot implement true dual-switch or current-mirror functions without adding discrete components. | Choose only for single-switch applications where footprint is more critical than functional integration. |
Compared with BC846BDW1T1G and EMX16T2R, PMBT3904RAZ uniquely delivers 200 mA dual-switch capability in the smallest industry-standard DFN package, with superior thermal performance and verified 300 MHz bandwidth-making it optimal for high-density, multi-rail power and signal control.
Availability
PMBT3904RAZ is available at Aetrix Electronics and suitable for LED driver control, DC-DC converter bias, and multi-rail power sequencing requiring stable component supply and consistent parametric matching across production batches.
Supply support for PMBT3904RAZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade components.
This part belongs to Nexperia's PMB series of precision-matched dual transistors, engineered specifically for space-constrained power management and signal routing in consumer, industrial, and computing applications.
FAQ
What is the maximum allowable junction temperature for PMBT3904RAZ?
The absolute maximum junction temperature (Tj) is 150 °C, as specified in the Limiting Values table. Operation above this threshold risks permanent degradation of hFE and increased leakage currents. Derating begins at 25 °C ambient, with Ptot decreasing linearly to zero at 150 °C junction temperature.
Can PMBT3904RAZ be used in linear amplification mode?
No-it is characterized and qualified exclusively for switching applications. Its hFE variation across IC (60–300) and lack of linearity specifications (e.g., distortion, THD) in the datasheet indicate it is not optimized for analog amplification. Use dedicated general-purpose amplifiers like BC847 for such roles.
Is the DFN1412-6 package compatible with standard reflow profiles?
Yes-the device is qualified for JEDEC J-STD-020-compliant lead-free reflow, with peak temperature up to 260 °C. The recommended footprint (Fig. 11) uses 0.25 mm solder mask-defined lands and 0.3 mm stencil aperture to ensure void-free solder joints and mechanical reliability on FR4 boards.
How are the two transistors electrically isolated in PMBT3904RAZ?
TR1 and TR2 share a common silicon die but have fully isolated collector, base, and emitter terminals-no internal connection exists between them. Pin 1 (E1), Pin 2 (B1), and Pin 6 (C1) form TR1; Pin 4 (E2), Pin 5 (B2), and Pin 3 (C2) form TR2. This enables independent biasing and switching without crosstalk.
PMBT3904RAZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-XFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 NPN (Dual)
- Current - Collector (Ic) (Max):
- 200mA
- Voltage - Collector Emitter Breakdown (Max):
- 40V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max):
- 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 10mA, 1V
- Power - Max:
- 480mW
- Frequency - Transition:
- 300MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DFN1412-6
PMBT3904RAZ FAQ
1.How can I place an order for PMBT3904RAZ through Aetrix?
Please submit a Request for Quotation (RFQ) for PMBT3904RAZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMBT3904RAZ reliable?
The price and inventory of PMBT3904RAZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMBT3904RAZ is usually 5 days.
3.What payment methods are accepted for PMBT3904RAZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMBT3904RAZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMBT3904RAZ?
PMBT3904RAZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMBT3904RAZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMBT3904RAZ?
For technical support, including PMBT3904RAZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMBT3904RAZ requirements.
6.How does Aetrix verify that PMBT3904RAZ is sourced from the original manufacturer or authorized distributors?
All PMBT3904RAZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMBT3904RAZ meets industry standards.
7.What is the process for return or replacement of PMBT3904RAZ?
All PMBT3904RAZ units undergo pre-shipment inspection (PSI). If there is an issue with PMBT3904RAZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMBT3904RAZ part is unused and in its original packaging.
Return procedure for PMBT3904RAZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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