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Nexperia USA Inc. PMBTA42DS,125
- Part No.:
- PMBTA42DS,125
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays
- Package:
- SC-74, SOT-457
- Datasheet:
-
PMBTA42DS,125.pdf
- Description:
- TRANS 2NPN 300V 100MA 6-TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:4,395
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Product details
Overview
PMBTA42DS from Nexperia is a dual NPN high-voltage transistor pair in a single SOT457 (TSOP6) package, rated for 300 V VCEO and 100 mA IC per transistor. It integrates two electrically isolated NPN transistors optimized for line interface and CRT deflection circuits requiring breakdown voltage headroom and compact dual-device integration.
For engineers reviewing the PMBTA42DS datasheet, PMBTA42DS pinout, PMBTA42DS application, or PMBTA42DS equivalent, this device supports high-voltage switching in telecom line interfaces, CRT TV horizontal deflection, monitor flyback drivers, and other space-constrained analog power stages where dual-transistor isolation and 300 V blocking capability are critical.
Technical Context
The PMBTA42DS implements two discrete NPN bipolar junction transistors with fully independent emitter-base-collector terminals-no internal connection between TR1 and TR2. Each transistor features identical absolute maximum ratings: 300 V VCEO, 100 mA continuous IC, and 200 mA peak ICM.
Its DC current gain (hFE) ranges from 25 to 40 at IC = 1–30 mA, with VCE(sat) ≤ 500 mV and VBE(sat) ≤ 900 mV under IC/IB = 5 conditions. Thermal resistance Rth(j-a) varies from 278 K/W (ceramic PCB) to 431 K/W (standard FR4), confirming its dependence on mounting thermal design.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 300 V - Enables safe operation in 200 V AC line-derived circuits with margin against transients. |
| IC (continuous) | 100 mA - Supports moderate-power switching in CRT deflection yoke drivers and telecom interface stages. |
| hFE | 25–40 @ IC = 1–30 mA - Provides predictable base drive requirements for linear and saturated switching modes. |
| VCE(sat) | ≤ 500 mV @ IC = 20 mA, IB = 2 mA - Minimizes conduction loss and self-heating in pulsed high-voltage loads. |
| Rth(j-a) | 278–431 K/W - Requires careful PCB copper area allocation (e.g., 1 cm² collector pad) to sustain full current at Tj ≤ 150 °C. |
| fT | 50 MHz - Sufficient for horizontal deflection frequencies up to ~15.7 kHz with adequate gain margin. |
Pinout & Package
Package: SOT457 (TSOP6), 6-lead surface-mount plastic package with 0.65 mm pitch; dimensions 3.1 × 1.7 × 1.3 mm (L × W × H); standard footprint per Fig. 7 (reflow) and Fig. 8 (wave).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | E1 | Emitter of Transistor 1 - Reference node for TR1's current path; must be routed with low-inductance ground return in switching applications. |
| 2 | B2 | Base of Transistor 2 - Input control terminal for TR2; requires current-limiting resistor to prevent overdrive beyond IBM = 100 mA. |
| 3 | C2 | Collector of Transistor 2 - High-voltage output node for TR2; connects to load (e.g., CRT yoke) and requires HV layout clearance ≥ 300 V. |
| 4 | E2 | Emitter of Transistor 2 - Independent return path for TR2; not internally tied to E1, enabling floating or differential configurations. |
| 5 | B1 | Base of Transistor 1 - Separate control input for TR1; allows asynchronous or complementary drive of the two transistors. |
| 6 | C1 | Collector of Transistor 1 - Second high-voltage output node; electrically isolated from C2, supporting dual independent switching paths. |
Key Features
| Feature | Design Value |
|---|---|
| High-voltage isolation | 300 V VCEO per transistor enables direct interface with 230 V AC-derived supplies without external snubbers. |
| Dual independent NPN topology | Zero internal coupling between TR1 and TR2 allows separate biasing, timing, and load connections-ideal for push-pull or dual-stage drivers. |
| Thermally optimized SOT457 | Low-profile TSOP6 package supports automated assembly while delivering 450 mW Ptot (FR4) and 700 mW (ceramic), easing thermal management in dense layouts. |
| Controlled saturation behavior | VCE(sat) ≤ 500 mV and VBE(sat) ≤ 900 mV ensure stable on-state performance across –55 °C to +150 °C ambient range. |
Applications
| Telecom Line Interface | CRT TV Horizontal Deflection |
|---|---|
|
Use Scenario: Isolation and transient protection in analog telephone line interface circuits handling ring signal surges up to 170 V peak. IC Role / Device Role / Timing Role: Dual NPN switch providing bidirectional current limiting and overvoltage clamping via controlled saturation and breakdown margin. Use Value: Eliminates need for discrete dual-transistor arrays while maintaining 300 V standoff and <500 mV conduction drop under 100 mA load. |
Use Scenario: Driving horizontal deflection yoke in legacy CRT televisions requiring precise timing and high-voltage flyback recovery. IC Role / Device Role / Timing Role: High-voltage switch pair controlling yoke current ramp-up and energy transfer during retrace phase. Use Value: Enables compact, thermally efficient implementation of 15.7 kHz switching with <1 µs turn-off delay and minimal VCE overshoot. |
| Monitor Flyback Converter | Industrial HV Signal Conditioning |
|
Use Scenario: Primary-side switching in low-power flyback converters for display power supplies operating from 100–240 V AC inputs. IC Role / Device Role / Timing Role: Dual-transistor configuration used in quasi-resonant or fixed-frequency topologies for primary switch and auxiliary gate driver. Use Value: Reduces BOM count by integrating two matched high-voltage switches in one footprint, improving layout symmetry and EMI control. |
Use Scenario: Precision high-voltage level shifting and pulse amplification in industrial test equipment signal chains. IC Role / Device Role / Timing Role: Dual emitter-follower or common-emitter stage for translating logic-level signals to ±150 V swing with minimal distortion. Use Value: Delivers 50 MHz fT and <100 nA leakage, ensuring accurate pulse fidelity and low offset drift in calibrated measurement paths. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual high-voltage NPN transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC847BDW1T1G | Lower VCEO (45 V), higher hFE (200–450), same SOT363 package | Not suitable for >60 V applications; limited to low-voltage logic-level switching and signal amplification | Select only when system voltage remains below 45 V and high gain is prioritized over breakdown safety margin. |
| ZTX653STZ | Single NPN, TO-92 package, VCEO = 300 V, IC = 1 A, larger footprint | Requires two devices and more PCB area; lacks integrated dual-isolation benefit | Choose when higher current (≥500 mA) per channel is needed and board space permits discrete placement. |
Compared with BC847BDW1T1G and ZTX653STZ, the PMBTA42DS uniquely delivers 300 V dual-NPN isolation in a 3.1 mm × 1.7 mm footprint-enabling compact, high-reliability designs in CRT, telecom, and flyback systems where voltage rating, thermal density, and component count are jointly constrained.
Availability
PMBTA42DS is available at Aetrix Electronics and suitable for telecom line interface, CRT TV horizontal deflection, and monitor flyback converter designs requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.
Supply support for PMBTA42DS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable components for automotive, industrial, mobile, and computing markets.
The PMBTA42DS belongs to Nexperia's high-voltage bipolar transistor portfolio, engineered specifically for analog power switching in legacy display and telecom infrastructure where robustness, small size, and dual-device integration are mandatory.
FAQ
Is PMBTA42DS automotive-qualified?
No. Per Nexperia's revision history (v.4, October 2024), PMBTA42DS is explicitly designated as non-automotive qualified. It has not undergone AEC-Q101 stress testing or automotive-grade qualification. For automotive use, consult Nexperia's -Q series alternatives such as PBSS4041T, which are separately qualified and documented.
Can TR1 and TR2 share a common emitter connection?
Yes, but only externally. Pin 1 (E1) and Pin 4 (E2) are physically separate terminals with no internal bond wire or silicon connection. They may be tied together on the PCB if circuit topology requires a shared emitter node-however, doing so eliminates electrical isolation and must be verified against thermal derating and crosstalk requirements.
What is the maximum allowable base current for continuous operation?
The absolute maximum peak base current is 100 mA (single pulse, tp ≤ 1 ms). For continuous DC operation, Nexperia does not specify a standalone IB limit; instead, it constrains total power dissipation (Ptot ≤ 450 mW on FR4). At VBE(sat) ≈ 900 mV, sustained IB must remain below ~500 mA to avoid exceeding Ptot, but practical design limits IB to ≤20 mA to maintain hFE stability and thermal safety.
Does PMBTA42DS support avalanche energy rating?
No. The datasheet does not specify an avalanche energy (EAS) rating, SOA curves, or ruggedness test data. Its Absolute Maximum Ratings define only steady-state and single-pulse limits (e.g., ICM = 200 mA, tp ≤ 1 ms). Designers must implement external clamping (e.g., TVS diodes or RC snubbers) to absorb inductive flyback energy in switching applications.
PMBTA42DS,125 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-74, SOT-457
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 NPN (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 300V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 2mA, 20mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 40 @ 30mA, 10V
- Power - Max:
- 420mW
- Frequency - Transition:
- 50MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
PMBTA42DS,125 FAQ
1.How can I place an order for PMBTA42DS,125 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMBTA42DS,125 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMBTA42DS,125 reliable?
The price and inventory of PMBTA42DS,125 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMBTA42DS,125 is usually 5 days.
3.What payment methods are accepted for PMBTA42DS,125?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMBTA42DS,125 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMBTA42DS,125?
PMBTA42DS,125 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMBTA42DS,125 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMBTA42DS,125?
For technical support, including PMBTA42DS,125 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMBTA42DS,125 requirements.
6.How does Aetrix verify that PMBTA42DS,125 is sourced from the original manufacturer or authorized distributors?
All PMBTA42DS,125 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMBTA42DS,125 meets industry standards.
7.What is the process for return or replacement of PMBTA42DS,125?
All PMBTA42DS,125 units undergo pre-shipment inspection (PSI). If there is an issue with PMBTA42DS,125, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMBTA42DS,125 part is unused and in its original packaging.
Return procedure for PMBTA42DS,125:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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