Nexperia USA Inc. PMEG030V030EPEZ

Overview

PMEG030V030EPEZ from Nexperia is a 30 V, 3 A planar low forward voltage Schottky barrier rectifier in a CFP15B (SOT1289B) thermally enhanced SMD package. It delivers 400–450 mV forward voltage at 3 A and 25 °C, supports 120 A non-repetitive peak forward current, and features dual-anode construction for high-current routing in compact DC/DC converters.

For engineers reviewing the PMEG030V030EPEZ datasheet, PMEG030V030EPEZ pinout, PMEG030V030EPEZ application, or PMEG030V030EPEZ equivalent, key selection criteria include ultra-low VF performance at elevated junction temperatures, thermal resistance to solder point (Rth(j-sp) = 3 K/W), reverse recovery time (trr = 12 ns ramp), and suitability for OR-ing and reverse polarity protection in space-constrained power rails.

Technical Context

This Schottky rectifier uses clip-bond technology to minimize parasitic inductance and enhance thermal transfer from the die to the cathode tab. Its dual-anode (pins 1 & 2) and single-cathode (pin 3) configuration enables symmetric current sharing and low-inductance mounting on FR4 PCBs with standard or extended cathode pads.

The device operates with no minority-carrier storage, delivering near-zero reverse recovery charge (Qrr not specified but implied by trr ≤ 16 ns step / 12 ns ramp) and stable VF across –40 °C to 125 °C. Reverse leakage remains below 150 µA at 30 V and 25 °C, supporting high-efficiency operation in low-voltage, high-current paths.

Key Specifications

Pinout & Package

Encapsulated in CFP15B (SOT1289B): ultra-thin 5.8 × 4.3 × 0.95 mm SMD package with thermal-enhanced copper clip structure and 2.13 mm lead pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with VS-3EYH03-M3/54 and NSR3030HT1G, PMEG030V030EPEZ delivers superior thermal performance (3 K/W vs. >12 K/W), lower VF at high current, and dual-anode layout flexibility - making it optimal for high-density, high-efficiency 24 V power rails.

Availability

PMEG030V030EPEZ is available at Aetrix Electronics and suitable for high-efficiency DC/DC conversion, OR-ing power paths, and reverse polarity protection requiring stable component supply and consistent thermal performance across production batches.

Supply support for PMEG030V030EPEZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a leading global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with core expertise in advanced packaging and power efficiency optimization.

This device belongs to Nexperia's Planar Low VF Schottky rectifier product line, engineered specifically for high-current, low-voltage power conversion in space-constrained applications such as telecom infrastructure, computing power supplies, and industrial automation.

FAQ

What is the maximum continuous forward current for PMEG030V030EPEZ under standard PCB conditions?

The PMEG030V030EPEZ supports 3 A average forward current (IF(AV)) when mounted on an FR4 PCB with standard footprint and 50 % duty cycle square-wave excitation at 20 kHz. At DC (δ = 1), the limiting factor becomes thermal: with a 1 cm² cathode pad, it sustains up to 4.2 A before exceeding Tj = 175 °C.

Does PMEG030V030EPEZ have a specified reverse recovery charge (Qrr)?

No Qrr value is published in the datasheet. As a Schottky barrier rectifier with majority-carrier conduction, it exhibits negligible stored charge; its reverse recovery is characterized by trr = 12 ns (ramp) and 16 ns (step), confirming absence of minority-carrier tail and enabling clean switching in high-frequency topologies.

Can PMEG030V030EPEZ be used in automotive applications?

No. The PMEG030V030EPEZ is not AEC-Q200 qualified and lacks automotive-grade screening, temperature cycling validation, or guaranteed operation beyond 125 °C junction. It is intended for industrial, computing, and telecom applications where ambient temperatures remain ≤85 °C and transient stress is within datasheet limiting values.

How does the dual-anode configuration affect PCB layout and thermal design?

The dual-anode (pins 1 & 2) must be routed to the same net with symmetrical trace width and length to ensure balanced current sharing. The cathode (pin 3) requires a dedicated thermal pad ≥1 cm² connected to internal ground planes via multiple vias - this achieves the 3 K/W Rth(j-sp) and prevents localized hot spots during 3 A operation.