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Nexperia USA Inc. PMEG045V100EIPEZ

Part No.:
PMEG045V100EIPEZ
Manufacturer:
Nexperia USA Inc.
Category:
Single Diodes
Package:
TO-277, 3-PowerDFN
Datasheet:
AetrixPMEG045V100EIPEZ.pdf
Description:
DIODE SCHOTTKY 45V 10A CFP15B
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,660

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Product details

Overview

PMEG045V100EIPE from Nexperia is a 45 V, 10 A planar low forward voltage Schottky barrier rectifier in a CFP15B (SOT1289B) thermally enhanced ultra-thin SMD package, designed for high-efficiency DC-to-DC conversion and freewheeling applications where low conduction loss and fast switching are critical. It delivers VF = 490–540 mV at 10 A/25 °C, IR ≤ 500 µA at 45 V, and supports IFSM = 210 A non-repetitive peak current.

For engineers reviewing the PMEG045V100EIPE datasheet, PMEG045V100EIPE pinout, PMEG045V100EIPE application, or PMEG045V100EIPE equivalent, key selection criteria include forward voltage at rated current, thermal resistance to solder point (Rth(j-sp) = 3 K/W), reverse leakage under full VR, and compatibility with high-frequency SMPS layouts requiring minimal footprint and low profile.

Technical Context

This Schottky rectifier uses clip-bond technology to achieve low VF and high power capability in a 5.8 × 4.3 × 0.95 mm flat-lead package. Its planar junction structure enables stable reverse recovery (trr ≤ 22 ns step, ≤ 15 ns ramp) and negligible minority-carrier storage, eliminating tail current during turn-off.

The device operates with Tj up to 175 °C and features dual anode terminals (Pins 1 & 2) and a cathode tab (Pin 3), enabling low-inductance PCB layout and direct thermal coupling to copper pour. Rth(j-a) = 90 K/W (standard FR4) and Rth(j-sp) = 3 K/W confirm its suitability for high-current, space-constrained power rails.

Key Specifications

Parameter Value and Actual Design Meaning
VR 45 V maximum reverse voltage - defines safe blocking capability in OR-ing and reverse polarity protection circuits
IF(AV) 10 A average forward current - sustained DC or square-wave (δ = 0.5, f = 20 kHz) rating under Tsp ≤ 170 °C
VF @ 10 A 490–540 mV at 25 °C - enables <1.5 W conduction loss at full load, critical for >95% efficiency in 12 V/48 V DC-DC stages
IR @ 45 V 100–500 µA at 25 °C - low leakage preserves battery runtime in always-on reverse-polarity protection
trr ≤22 ns (step), ≤15 ns (ramp) - ensures clean commutation in synchronous rectifiers and high-frequency flyback snubbers
Rth(j-sp) 3 K/W - allows direct thermal path from junction to solder point, supporting >2 W dissipation on 1 cm² cathode pad
IFSМ 210 A peak (8.3 ms half-sine) - withstands inrush and transient overloads in industrial power supplies

Pinout & Package

Package: CFP15B (SOT1289B), ultra-thin surface-mount plastic package with thermal enhancement via exposed cathode tab; dimensions 5.8 × 4.3 × 0.95 mm, 2.13 mm lead pitch.

Pin/Terminal Circuit Role Design Meaning
1 Anode Primary anode connection; electrically tied to Pin 2; used for high-current input routing
2 Anode Secondary anode terminal; parallel connection reduces bond-wire inductance and improves current sharing
3 Cathode Exposed metal tab - serves as main current return path and primary thermal interface to PCB copper

Key Features

Feature Design Value
Very low VF 490–540 mV @ 10 A/25 °C - cuts conduction losses by ≥30% vs. standard Schottkys, directly improving system efficiency
Clip-bond construction Enables 14 A continuous forward current (IF) and 210 A surge handling - eliminates wire-bond failure modes under thermal cycling
CFP15B thermal design Rth(j-sp) = 3 K/W - achieves 2.15 W power dissipation on 1 cm² cathode pad, enabling compact heatsinking
Ultra-thin SMD profile 0.95 mm max height - fits beneath low-profile connectors and in stacked PCB assemblies
Low trr & Qrr trr ≤ 22 ns, no stored charge - eliminates reverse recovery spikes, reducing EMI filter burden in SMPS

Applications

High-Efficiency DC-DC Conversion Reverse Polarity Protection

Use Scenario: Primary-side synchronous rectification in 48 V–12 V buck converters for telecom and server power modules.

IC Role / Device Role / Timing Role: Low-VF freewheeling diode replacing MOSFET body diode to reduce conduction loss and simplify gate drive.

Use Value: 490 mV VF at 10 A lowers power loss by ~0.5 W vs. typical 580 mV Schottky, improving thermal margin at 96% efficiency targets.

Use Scenario: Input protection for USB-C PD ports and industrial 24 V fieldbus interfaces.

IC Role / Device Role / Timing Role: Series-blocking Schottky placed before LDO or DC-DC input to prevent damage from reversed connector insertion.

Use Value: 100 µA max IR at 25 °C ensures <2.5 µW standby loss, preserving battery life in always-connected edge sensors.

OR-ing Circuitry Freewheeling Diode

Use Scenario: Redundant 12 V power rail combining in network switches with dual PoE injectors.

IC Role / Device Role / Timing Role: Back-to-back configured Schottky enabling seamless source switchover without voltage drop or reverse current flow.

Use Value: Dual-anode (Pins 1+2) and low VF minimize forward drop imbalance between parallel paths, ensuring balanced current sharing.

Use Scenario: Flyback converter output rectification in LED drivers and industrial PLC I/O modules.

IC Role / Device Role / Timing Role: Fast-recovery freewheeling path for transformer secondary current during MOSFET off-time.

Use Value: 15 ns ramp trr prevents voltage overshoot during diode turn-off, reducing snubber component count and board area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Alternative Part Technical Difference Application Difference Selection Advice
Vishay VS-10BQ040-M3/45 40 V VR, 10 A IF(AV), VF = 480 mV @ 10 A, TO-277 package (3.05 mm height) Lower VR rating limits use in 45 V systems; taller profile restricts ultra-thin designs Select only if VR margin <5 V is acceptable and board height >3 mm is available
ON Semiconductor MBR1045CT 45 V VR, 10 A IF(AV), VF = 620 mV @ 10 A, TO-220AB package (9.1 mm height) Higher VF increases conduction loss by ~1.3 W; through-hole mounting incompatible with full SMT lines Use only for prototyping or legacy through-hole designs where thermal mass outweighs efficiency penalty

Compared with VS-10BQ040-M3/45 and MBR1045CT, PMEG045V100EIPE offers superior VR margin, lowest VF among SMD 45 V/10 A Schottkys, and the thinnest profile-enabling higher power density in modern DC-DC modules where thermal and spatial constraints dominate.

Availability

PMEG045V100EIPE is available at Aetrix Electronics and suitable for high-efficiency DC-to-DC conversion, reverse polarity protection, OR-ing circuitry, and freewheeling applications requiring stable component supply, consistent thermal performance, and long-term industrial lifecycle support.

Supply support for PMEG045V100EIPE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET devices with focus on efficiency, miniaturization, and robustness for power and signal applications.

This device belongs to Nexperia's Planar Low VF Schottky rectifier product line, engineered specifically for high-current, high-frequency power conversion where low forward voltage and ultra-thin packaging are essential for next-generation power supplies.

FAQ

What is the maximum junction temperature and how does it affect derating?

The PMEG045V100EIPE has a maximum junction temperature (Tj) of 175 °C. Derating follows ambient and solder point temperature curves in Figures 8–10 of the datasheet: at Tamb = 70 °C with standard FR4 footprint, IF(AV) drops to ~7.5 A; with 1 cm² cathode pad, it sustains ~9.2 A. Exceeding Tj = 175 °C risks permanent parametric shift or metallization failure.

Can this Schottky be used in place of a silicon PN diode in a 48 V input SMPS?

Yes-its 45 V VR rating provides adequate margin for 48 V nominal inputs with typical transients (e.g., ISO 7637-2 Pulse 1/2). With VF ≈ 500 mV vs. ~1.1 V for silicon, it reduces conduction loss by >50%, lowering thermal stress and improving light-load efficiency. Ensure layout minimizes parasitic inductance due to fast trr.

How does the dual-anode (Pins 1 & 2) configuration improve performance?

The dual-anode structure halves effective series resistance and inductance per path, distributing current evenly and reducing localized heating. In PCB layout, connecting both pins to the same high-current net lowers total loop inductance-critical for minimizing voltage spikes during fast switching in synchronous rectifier topologies.

Is the CFP15B package compatible with standard reflow profiles?

Yes-the CFP15B (SOT1289B) is qualified for lead-free reflow per J-STD-020. Recommended stencil thickness is 0.125 mm; cathode pad requires 1 cm² copper area for optimal thermal performance. Peak temperature must not exceed 260 °C for ≤30 seconds, with ramp rates within JEDEC Class 3 limits.

PMEG045V100EIPEZ Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
TO-277, 3-PowerDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
45 V
Current - Average Rectified (Io):
10A
Voltage - Forward (Vf) (Max) @ If:
540 mV @ 10 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
22 ns
Current - Reverse Leakage @ Vr:
500 µA @ 45 V
Capacitance @ Vr, F:
700pF @ 1V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
CFP15B
Operating Temperature - Junction:
175°C

PMEG045V100EIPEZ FAQ

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Please submit a Request for Quotation (RFQ) for PMEG045V100EIPEZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMEG045V100EIPEZ reliable?

The price and inventory of PMEG045V100EIPEZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMEG045V100EIPEZ is usually 5 days.

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Once your PMEG045V100EIPEZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMEG045V100EIPEZ?

For technical support, including PMEG045V100EIPEZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMEG045V100EIPEZ requirements.

6.How does Aetrix verify that PMEG045V100EIPEZ is sourced from the original manufacturer or authorized distributors?

All PMEG045V100EIPEZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMEG045V100EIPEZ meets industry standards.

7.What is the process for return or replacement of PMEG045V100EIPEZ?

All PMEG045V100EIPEZ units undergo pre-shipment inspection (PSI). If there is an issue with PMEG045V100EIPEZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMEG045V100EIPEZ part is unused and in its original packaging.

Return procedure for PMEG045V100EIPEZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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