Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. PMEG045V100EPEZ

Part No.:
PMEG045V100EPEZ
Manufacturer:
Nexperia USA Inc.
Category:
Single Diodes
Package:
TO-277, 3-PowerDFN
Datasheet:
AetrixPMEG045V100EPEZ.pdf
Description:
DIODE SCHOTTKY 45V 10A CFP15B
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

PMEG045V100EPEZ from Nexperia is a 45 V, 10 A planar low forward voltage Schottky barrier rectifier in a CFP15B (SOT1289B) thermally enhanced ultra-thin SMD package. It delivers 450–490 mV forward voltage at 10 A and 25 °C, supports 300 A non-repetitive peak forward current, and enables high-efficiency DC-to-DC conversion in space-constrained power rails.

For engineers reviewing the PMEG045V100EPEZ datasheet, PMEG045V100EPEZ pinout, PMEG045V100EPEZ application, or PMEG045V100EPEZ equivalent, key selection criteria include low VF performance at high ambient temperatures, thermal resistance to solder point (3 K/W), reverse recovery time (≤36 ns), and compatibility with FR4 PCBs using standard or enhanced cathode pad footprints.

Technical Context

This Schottky rectifier uses clip-bond technology to achieve high power capability and low thermal resistance - Rth(j-sp) = 3 K/W - by direct metal attachment of the die to the cathode tab. Its planar structure ensures stable reverse leakage (<600 µA at 45 V, 25 °C) and minimal capacitance (375 pF at 10 V).

The device operates across –40 °C to +175 °C junction temperature, with VF increasing only modestly to 570 mV at –40 °C (10 A) and dropping to 390 mV at 125 °C (10 A), enabling robust performance in wide-temperature industrial and telecom power supplies.

Key Specifications

Parameter Value and Actual Design Meaning
Reverse Voltage (VR) 45 V - Maximum continuous blocking voltage without breakdown; defines usable input range in 36–42 V systems.
Average Forward Current (IF(AV)) 10 A - Sustained DC or pulsed average current at Tsp ≤ 174 °C on standard FR4; enables compact 12–48 V output rectification.
Forward Voltage (VF) 450–490 mV @ 10 A, 25 °C - Low conduction loss reduces heat generation and improves efficiency in high-current paths.
Reverse Recovery Time (trr) 36 ns (step recovery) - Near-zero minority-carrier storage enables clean switching in high-frequency SMPS (>500 kHz).
Thermal Resistance (Rth(j-sp)) 3 K/W - Junction-to-solder-point resistance measured at cathode tab; enables high-power dissipation with minimal board copper area.
Reverse Leakage (IR) 150–600 µA @ 45 V, 25 °C - Low leakage preserves efficiency in OR-ing and reverse polarity protection circuits.
Peak Forward Surge (IFSM) 300 A @ 8.3 ms - Withstands inrush and fault currents in hot-swap and redundant supply designs.

Pinout & Package

Encapsulated in a CFP15B (SOT1289B) surface-mount package: 5.8 × 4.3 × 0.95 mm body, 2.13 mm lead pitch, ultra-thin profile optimized for thermal transfer via exposed cathode tab.

Pin/Terminal Circuit Role Design Meaning
1 (A) Anode Primary anode connection; electrically tied to Pin 2; used for high-current input routing.
2 (A) Anode Second anode terminal - parallel-connected to Pin 1 - reduces trace inductance and current density in high-frequency layouts.
3 (K) Cathode Exposed thermal pad cathode; serves as main current return path and primary heat sink interface to PCB copper.

Key Features

Feature Design Value
Very low forward voltage 450–490 mV @ 10 A enables >95% efficiency in 12 V/10 A buck outputs and reduces heatsink requirements.
Clip-bond construction Direct die-to-tab metallurgical bond lowers Rth(j-sp) to 3 K/W - 3× better than wire-bond equivalents - improving thermal headroom.
Ultra-thin SMD package 0.95 mm max height allows integration into slim-profile power modules and stacked PCB assemblies.
High surge capability 300 A IFSM rating supports reliable operation during cold-start, hot-plug, and transient overload events.
Low reverse recovery charge trr ≤ 36 ns minimizes switching losses and EMI in high-frequency synchronous rectifier replacements.

Applications

High-Efficiency DC-DC Conversion OR-ing Diode in Redundant Supplies

Use Scenario: Secondary-side rectification in 48 V–12 V isolated buck converters for server VRMs and telecom PSUs.

IC Role / Device Role / Timing Role: Primary unidirectional power path switch; replaces synchronous MOSFETs where control complexity or gate drive is impractical.

Use Value: 450 mV VF cuts conduction loss by ~40% vs. standard Schottkys, directly improving full-load efficiency by 0.8–1.2%.

Use Scenario: Diode-OR configuration connecting two independent 12 V power supplies to a common load bus.

IC Role / Device Role / Timing Role: Unidirectional current gate preventing backfeed; operates continuously under steady-state load sharing.

Use Value: Low 600 µA max IR minimizes standby power loss; dual-anode layout eases parallel placement for current sharing.

Reverse Polarity Protection Freewheeling in Synchronous Buck Converters

Use Scenario: Input protection for 24 V industrial controllers exposed to field wiring errors.

IC Role / Device Role / Timing Role: Series-blocking element placed before bulk capacitance; conducts only during correct polarity insertion.

Use Value: 45 V VR provides 20% margin over 24 V nominal; 10 A IF(AV) handles full system startup surge.

Use Scenario: Freewheeling path in 5–12 V non-synchronous buck regulators driving FPGAs or ASICs.

IC Role / Device Role / Timing Role: Provides low-loss current recirculation during high-side MOSFET off-time; critical for light-load regulation.

Use Value: 36 ns trr prevents reverse recovery ringing and reduces output voltage overshoot during light-load transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Alternative Part Technical Difference Application Difference Selection Advice
Vishay VS-10BQ040-M3/45 40 V VR, 10 A IF(AV), VF = 470 mV @ 10 A, TO-277 package (3.05 mm height) Lower voltage rating limits use to ≤36 V systems; taller profile increases board clearance needs. Select when 40 V rating suffices and TO-277 footprint is already established; avoid for 45 V input designs.
ON Semiconductor NSR10F40NXT5G 40 V VR, 10 A IF(AV), VF = 440 mV @ 10 A, SOD-123FL (2.1 × 1.6 × 0.9 mm) Smaller package lacks thermal pad; Rth(j-a) = 120 K/W vs. 70 K/W for PMEG045V100EPEZ - unsuitable above 2 A continuous. Use only in low-power, space-critical applications; not recommended for >3 A average current or high-ambient environments.

Compared with VS-10BQ040-M3/45 and NSR10F40NXT5G, PMEG045V100EPEZ uniquely combines 45 V rating, ultra-low 3 K/W junction-to-pad thermal resistance, and dual-anode layout - making it the only option qualified for high-current, high-temperature, and low-profile 48 V system rectification.

Availability

PMEG045V100EPEZ is available at Aetrix Electronics and suitable for high-efficiency DC-DC conversion, OR-ing diode networks, and reverse polarity protection requiring stable component supply, consistent thermal performance, and long-term industrial lifecycle support.

Supply support for PMEG045V100EPEZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade components.

This part belongs to Nexperia's Planar Low VF Schottky Rectifier product line, engineered specifically for high-current, low-loss power conversion in telecom, computing, and industrial power supplies where thermal efficiency and board space are critical constraints.

FAQ

What is the maximum allowable solder point temperature for PMEG045V100EPEZ during reflow?

The device is rated for a maximum solder point temperature (Tsp) of 174 °C under δ = 0.5 square-wave conditions. Reflow profiles must ensure peak temperature at the cathode tab does not exceed this limit; Nexperia recommends using the CFP15B footprint in Figure 16 with 0.125 mm stencil thickness for controlled thermal mass.

Can PMEG045V100EPEZ be used in automotive applications?

No - PMEG045V100EPEZ is not AEC-Q200 qualified and is explicitly designated for industrial and commercial use per Nexperia's legal disclaimers. It has not undergone automotive-grade stress testing, and its reliability data does not cover extended temperature cycling or vibration requirements mandated for automotive ECUs or ADAS power rails.

How does the dual-anode configuration affect PCB layout?

The dual-anode (Pins 1 and 2) design allows symmetric high-current routing: both pins must be connected to the same net with equal-length, wide copper traces to balance current distribution and minimize inductive imbalance. This reduces EMI and thermal skew compared to single-anode alternatives in high-di/dt applications.

Is there a recommended minimum copper area for the cathode pad?

Yes - for optimal thermal performance, Nexperia specifies a 1 cm² tin-plated copper pad under the cathode (Pin 3) to achieve the 2.15 W Ptot rating and 3 K/W Rth(j-sp). Using less than 1 cm² reduces safe operating current significantly; Figure 9 shows IF(AV) drops to ~7.5 A at 25 °C ambient with smaller pads.

PMEG045V100EPEZ Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
TO-277, 3-PowerDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
45 V
Current - Average Rectified (Io):
10A
Voltage - Forward (Vf) (Max) @ If:
490 mV @ 10 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
36 ns
Current - Reverse Leakage @ Vr:
600 µA @ 45 V
Capacitance @ Vr, F:
1140pF @ 1V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
CFP15B
Operating Temperature - Junction:
175°C

PMEG045V100EPEZ FAQ

1.How can I place an order for PMEG045V100EPEZ through Aetrix?

Please submit a Request for Quotation (RFQ) for PMEG045V100EPEZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMEG045V100EPEZ reliable?

The price and inventory of PMEG045V100EPEZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMEG045V100EPEZ is usually 5 days.

3.What payment methods are accepted for PMEG045V100EPEZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMEG045V100EPEZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMEG045V100EPEZ?

PMEG045V100EPEZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMEG045V100EPEZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMEG045V100EPEZ?

For technical support, including PMEG045V100EPEZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMEG045V100EPEZ requirements.

6.How does Aetrix verify that PMEG045V100EPEZ is sourced from the original manufacturer or authorized distributors?

All PMEG045V100EPEZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMEG045V100EPEZ meets industry standards.

7.What is the process for return or replacement of PMEG045V100EPEZ?

All PMEG045V100EPEZ units undergo pre-shipment inspection (PSI). If there is an issue with PMEG045V100EPEZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMEG045V100EPEZ part is unused and in its original packaging.

Return procedure for PMEG045V100EPEZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PMEG045V100EPEZ Tags

  • PMEG045V100EPEZ
  • PMEG045V100EPEZ PDF
  • PMEG045V100EPEZ Datasheet
  • PMEG045V100EPEZ Specifications
  • PMEG045V100EPEZ Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. PMEG045V100EPEZ
  • Buy PMEG045V100EPEZ
  • PMEG045V100EPEZ Price
  • PMEG045V100EPEZ Distributor
  • PMEG045V100EPEZ Supplier
  • PMEG045V100EPEZ Wholesale
Related Products
1N4448X-TP
1N4448X-TP

Micro Commercial Co

1N4148WX-TP
1N4148WX-TP

Micro Commercial Co

1N4148TR
1N4148TR

onsemi

MMSD4148T1G
MMSD4148T1G

onsemi

MMBD914LT3G
MMBD914LT3G

onsemi

BAS16HT1G
BAS16HT1G

onsemi

1N914BWT
1N914BWT

onsemi

BAS21LT1G
BAS21LT1G

onsemi

LL4148
LL4148

onsemi

BAS16LT1G
BAS16LT1G

onsemi

MMSD914T1G
MMSD914T1G

onsemi

BAV21W-7-F
BAV21W-7-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER