Nexperia USA Inc. PMEG060T040CLPEZ

Overview

PMEG060T040CLPE from Nexperia is a dual common-cathode Trench Schottky barrier rectifier optimized for high-efficiency DC-DC conversion and reverse polarity protection. It delivers 2 A average forward current per diode at 60 V reverse voltage, with typ. 555 mV forward voltage at 2 A/25 °C and ultra-low reverse leakage (0.18 µA typ. at 60 V/25 °C), housed in a thermally enhanced CFP15B (SOT1289B) package.

For engineers reviewing the PMEG060T040CLPE datasheet, PMEG060T040CLPE pinout, PMEG060T040CLPE application, or PMEG060T040CLPE equivalent, key selection criteria include low VF for conduction loss minimization, sub-1 µA IR at 60 V for standby power integrity, dual-diode common-cathode topology for compact dual-rail rectification, and clip-bond thermal performance enabling 2.15 W total power dissipation on 1 cm² cathode pad.

Technical Context

This device implements a trench-based Schottky architecture to suppress reverse leakage while maintaining low forward voltage-critical for 12 V–48 V input DC-DC stages where reverse recovery losses must be eliminated. Its common-cathode configuration allows independent anode control while sharing a low-inductance, high-current cathode tab for thermal and electrical efficiency.

The CFP15B package uses copper clip bonding (not wire bonding) to reduce thermal resistance to 7 K/W (junction-to-solder-point), enabling sustained 2 A operation at ambient temperatures up to 100 °C when mounted on a 1 cm² cathode pad. Transient thermal impedance data confirms stable pulse handling up to 110 A non-repetitive peak forward current.

Key Specifications

Pinout & Package

Encapsulated in the CFP15B (SOT1289B) power SMD package: 5.8 mm × 4.3 mm × 0.95 mm body, 2.13 mm lead pitch, flat copper leads with exposed cathode tab for thermal and electrical performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual common-cathode Schottky rectifier applications.

Compared with VS-2EDH06M and NSR20F60HT1G, PMEG060T040CLPE delivers the lowest system-level power loss (via 555 mV VF and 0.18 µA IR) and smallest PCB footprint (CFP15B), while its 7 K/W Rth(j-sp) enables higher sustained current in thermally constrained layouts - making it optimal for space- and efficiency-critical 48 V input DC-DC and PoE applications.

Availability

PMEG060T040CLPE is available at Aetrix Electronics and suitable for high-efficiency DC-DC converters, reverse polarity protection circuits, and freewheeling applications requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.

Supply support for PMEG060T040CLPE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors - including logic, discretes, MOSFETs, and ESD protection devices - serving automotive, industrial, and consumer markets.

This device belongs to Nexperia's Trench Schottky Rectifier product line, engineered specifically for high-efficiency power conversion in space-constrained, thermally demanding applications such as PoE, USB-C PD, and industrial DC-DC modules.

FAQ

What is the maximum junction temperature and how does it affect derating?

The absolute maximum junction temperature is 175 °C. Derating curves (Fig. 11–13) show that at 100 °C Tj, the maximum allowable VR drops to ~50 V on a standard FR4 footprint (Rth(j-a) = 90 K/W), but remains ~58 V with a 1 cm² cathode pad (Rth(j-sp) = 7 K/W). Designers must select thermal layout based on required VR margin at operating Tj.

Can PMEG060T040CLPE replace traditional silicon diodes in flyback snubbers?

No - this is a Schottky rectifier optimized for forward conduction, not snubber clamping. Its 60 V VR rating and lack of avalanche capability make it unsuitable for voltage-clamping snubbers. For snubber applications, use purpose-designed ultrafast or avalanche-rated silicon diodes like P600K or STTH2R06.

Is the common cathode internally bonded or externally accessible?

The common cathode (Pin 3, CC) is externally accessible via a large, exposed copper tab on the underside of the CFP15B package. This tab is electrically and thermally connected to both diode cathodes and must be soldered to a dedicated PCB copper pour for optimal thermal performance and current handling.

How does the trench structure reduce leakage compared to planar Schottky diodes?

The trench geometry increases effective barrier height and reduces edge electric field crowding, suppressing thermionic-field emission - the dominant leakage mechanism in Schottky diodes. This yields 0.18 µA IR at 60 V/25 °C, ~5× lower than comparable planar 60 V Schottkys (e.g., 1 µA typical), directly improving standby efficiency in always-on systems.