Nexperia USA Inc. PMEG100T100ELPE-QZ

Overview

PMEG100T100ELPE-QZ from Nexperia is a 100 V, 10 A trench Schottky barrier rectifier in CFP15B (SOT1289B) package, designed for high-efficiency freewheeling and reverse polarity protection in automotive power systems. It delivers 750–810 mV forward voltage at 10 A/25 °C, <5 µA reverse leakage at 100 V/25 °C, and supports 180 A non-repetitive peak surge current - enabling compact, thermally robust DC/DC converter designs.

For engineers reviewing the PMEG100T100ELPE-QZ datasheet, PMEG100T100ELPE-QZ pinout, PMEG100T100ELPE-QZ application, or PMEG100T100ELPE-QZ equivalent, key selection criteria include low Qrr (11.5 nC), AEC-Q101 qualification, clip-bonded thermal performance (Rth(j-sp) = 70 K/W), and dual-anode cathode-terminal configuration for high-current PCB routing.

Technical Context

This trench Schottky rectifier uses deep-trench isolation to suppress leakage while maintaining low VF across temperature. Its dual-anode (pins 1 & 2) and single-cathode (pin 3) structure enables symmetrical current sharing and reduced parasitic inductance in high-frequency switching paths.

The device operates with junction temperatures up to 175 °C and features ultra-low reverse recovery charge (Qrr = 11.5 nC) and step-recovery time (trr = 22 ns), making it suitable for synchronous rectification and OR-ing circuits where fast turn-off and minimal switching loss are critical.

Key Specifications

Pinout & Package

Encapsulated in CFP15B (SOT1289B): ultra-thin 5.8 × 4.3 × 0.95 mm surface-mount package with thermal-enhanced clip-bonding and flat leads for low-inductance, high-current PCB mounting.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with VS-10EWH06-M3 and NSR10H100LT3G, PMEG100T100ELPE-QZ uniquely combines 100 V rating, sub-810 mV VF, AEC-Q101 compliance, and 70 K/W Rth(j-sp) - making it the only option capable of sustaining 10 A continuous current in thermally dense automotive ECUs without forced cooling.

Availability

PMEG100T100ELPE-QZ is available at Aetrix Electronics and suitable for automotive LED lighting, high-efficiency DC/DC conversion, and reverse polarity protection requiring stable component supply across production lifecycles.

Supply support for PMEG100T100ELPE-QZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components.

This device belongs to Nexperia's Trench Schottky Rectifier product line, engineered specifically for high-efficiency, high-temperature automotive power conversion where low leakage and robust thermal performance are mandatory.

FAQ

What is the maximum junction temperature and how does it affect derating?

The PMEG100T100ELPE-QZ has a maximum junction temperature (Tj) of 175 °C. At this limit, its maximum reverse voltage derates to approximately 40 V (per Fig. 11–13), and average forward current must be reduced to ≤4 A on standard FR4 PCBs. Derating curves in Figures 8–10 provide precise IF(AV) vs. Tamb/Tsp values for thermal design validation.

Is the dual-anode configuration internally connected or separate?

Pins 1 and 2 are internally shorted anode terminals - confirmed in the pinning diagram (Table 2) and package outline (Fig. 18). This configuration is not for independent operation but for enhanced current handling and thermal symmetry; both pins must be routed to the same net.

How does the 11.5 nC Qrr impact switching loss in a 500 kHz buck converter?

At 500 kHz, Qrr contributes ~5.75 mW of switching loss (Psw = Qrr × V × f), assuming 100 V blocking. Combined with low trr (22 ns), this minimizes tail current and voltage overlap during turn-off - reducing total switching loss by ~22% versus Schottkys with Qrr > 15 nC in the same topology.

Can this device replace a MOSFET-based synchronous rectifier?

Yes - in applications where gate drive complexity, cost, or layout area outweigh marginal efficiency gains. The PMEG100T100ELPE-QZ eliminates control circuitry while delivering VF comparable to mid-VF MOSFETs (e.g., 750 mV vs. ~650 mV RDS(on) × I), especially at partial load where MOSFET conduction loss rises due to higher RDS(on).