Nexperia USA Inc. PMEG100T20ELXDX

Overview

PMEG100T20ELXDX from Nexperia is a 100 V, 2 A trench Schottky barrier rectifier in CFP2-HP (SOD323HP) surface-mount package, designed for high-efficiency DC-to-DC conversion and freewheeling paths where low forward voltage (810–880 mV @ 2 A), ultra-low reverse leakage (0.12 µA @ 25 °C), and fast recovery (3 ns step trr) are critical. It serves as a unidirectional power switch in OR-ing and reverse polarity protection circuits.

For engineers reviewing the PMEG100T20ELXDX datasheet, PMEG100T20ELXDX pinout, PMEG100T20ELXDX application, or PMEG100T20ELXDX equivalent, key selection criteria include its 100 V reverse blocking rating, 2 A average forward current capability at Tsp ≤ 167 °C, clip-bonded thermal performance (Rth(j-sp) = 125 K/W on 1 cm² cathode pad), and SOD323HP footprint compatibility with high-density PCB layouts.

Technical Context

This device employs trench Schottky architecture to minimize VF and Qrr while maintaining stable reverse leakage up to 125 °C. Its clip-bonding construction directly connects the die to the exposed cathode heatsink tab, enabling efficient junction-to-solder-point thermal transfer.

The CFP2-HP package features solderable lead ends and an optimized 2.2 mm × 1.3 mm body with 0.68 mm height, supporting reflow profiles per JEDEC J-STD-020. Diode capacitance is 35 pF @ 10 V, and reverse recovery charge is rated at 1.2 nC under ramp conditions (dIF/dt = 100 A/µs).

Key Specifications

Pinout & Package

The PMEG100T20ELXDX is housed in a CFP2-HP (SOD323HP) plastic surface-mount package measuring 2.2 mm × 1.3 mm × 0.68 mm, featuring an exposed cathode heatsink tab for direct thermal coupling to the PCB.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with VS-2EY10-M3 and NSR20F100MX, PMEG100T20ELXDX delivers superior thermal performance via clip bonding and lowest IR at 100 V, making it optimal for thermally constrained OR-ing and high-frequency DC-DC designs where leakage and junction temperature stability are critical.

Availability

PMEG100T20ELXDX is available at Aetrix Electronics and suitable for high-efficiency DC-to-DC conversion, LED lighting, and reverse polarity protection requiring stable component supply across industrial and consumer production programs.

Supply support for PMEG100T20ELXDX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential system functionality, delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and mobile markets.

This device belongs to Nexperia's Trench Schottky Rectifier product line, engineered specifically for high-frequency power conversion where low VF, low Qrr, and robust thermal performance in miniature packages are mandatory.

FAQ

What is the maximum junction temperature for continuous operation?

The PMEG100T20ELXDX has a maximum junction temperature (Tj) rating of 175 °C. Operation at this limit requires strict adherence to thermal design rules: mounting the cathode tab on ≥1 cm² copper area, limiting ambient temperature per Fig. 8/9, and ensuring solder point temperature (Tsp) does not exceed 167 °C under δ = 0.5 square-wave conditions.

Can this diode be used in automotive applications?

No - the PMEG100T20ELXDX is not AEC-Q200 qualified and lacks automotive-grade screening, qualification testing, or guaranteed operation across -40 °C to +125 °C extended temperature ranges. Nexperia explicitly states non-automotive qualification in its legal disclaimers; use in automotive systems voids warranty and incurs full customer liability.

How does the CFP2-HP package improve thermal performance over standard SOD323?

The CFP2-HP package uses clip bonding to attach the die directly to the exposed cathode tab, reducing Rth(j-sp) to 125 K/W (vs. ~230 K/W for standard SOD323HP). This 45% lower thermal resistance allows 1.2 W power dissipation at ΔT = 150 K, enabling higher current density without increasing board area or adding thermal vias.

Is the 3 ns trr value measured under step or ramp conditions?

The 3 ns reverse recovery time (trr) is specified under step recovery conditions: IF = 0.5 A, IR = 1 A, IR(meas) = 0.25 A, Tj = 25 °C (per Fig. 14 and Table 7). Ramp recovery trr is 6 ns under dIF/dt = 100 A/µs, reflecting slower carrier sweep-out in linear di/dt transitions.