Nexperia USA Inc. PMEG100T30ELPX

Overview

PMEG100T30ELPX from Nexperia is a trench Schottky barrier rectifier optimized for high-efficiency power conversion, featuring 100 V reverse voltage rating, 3 A average forward current, low leakage current (0.25 µA at 100 V/25 °C), 705 mV typical forward voltage at 3 A, and CFP5 (SOD128) surface-mount package with clip-bonding technology for enhanced thermal performance in DC-DC converters and OR-ing circuits.

For engineers reviewing the PMEG100T30ELPX datasheet, PMEG100T30ELPX pinout, PMEG100T30ELPX application, or PMEG100T30ELPX equivalent, key selection criteria include low Qrr (10 nC), low IRM (1.3 A), junction temperature capability up to 175 °C, and validated performance in freewheeling and reverse polarity protection roles under pulsed and continuous duty conditions.

Technical Context

This device implements a trench-structured Schottky barrier architecture to minimize forward voltage while maintaining low reverse leakage across wide temperature ranges (–40 °C to 175 °C). Its low Qrr and fast trr (9 ns step recovery) enable high-frequency switching in SMPS and synchronous rectification topologies without significant switching loss penalties.

The CFP5 package uses clip-bonding to directly attach the die to the cathode lead frame, reducing thermal resistance to 12 K/W (junction-to-solder-point) and supporting 4.2 A peak forward current. The anode-cathode configuration is unidirectional, with cathode identified by a marking bar on the SOD128 body.

Key Specifications

Pinout & Package

Encapsulated in CFP5 (SOD128) - a compact, flat-lead surface-mount plastic package measuring 3.8 mm × 2.6 mm × 1.0 mm with 4 mm pitch and tin-plated copper leads. The package features a large cathode tab for thermal dissipation and is optimized for reflow soldering per IPC-7095 guidelines.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with PMEG100T30ELPX, VS-3EYH01-M3/54 trades higher leakage for broader distributor availability, while NSR30C100X offers marginally lower VF but no documented Qrr-making PMEG100T30ELPX optimal for high-frequency, low-standby-power OR-ing and DC-DC applications demanding verified fast recovery.

Availability

PMEG100T30ELPX is available at Aetrix Electronics and suitable for high-efficiency DC-DC conversion, LED lighting power supplies, and OR-ing circuits requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial and telecom equipment manufacturing.

Supply support for PMEG100T30ELPX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced Schottky, MOSFET, and ESD protection technologies.

This part belongs to Nexperia's Trench Schottky Rectifier product line, engineered specifically for high-frequency, high-efficiency power conversion in space-constrained applications where low VF, low IR, and robust thermal performance are mandatory.

FAQ

What is the maximum junction temperature for continuous operation?

The PMEG100T30ELPX has a rated maximum junction temperature of 175 °C. It achieves this rating using clip-bonding technology and a thermally optimized CFP5 package, allowing sustained 3 A average forward current at ambient temperatures up to 100 °C when mounted on a 1 cm² cathode pad, per Figure 9 in the datasheet.

Does this diode require a heatsink in typical 3 A applications?

No external heatsink is required. With Rth(j-sp) = 12 K/W and Ptot = 1.2 W at Tamb ≤ 25 °C, the device maintains safe junction temperatures using only a 1 cm² copper pad connected to the cathode terminal. At 3 A and 705 mV VF, power dissipation is ~2.1 W - manageable via the pad alone under forced-air or moderate natural convection.

How does its reverse recovery performance compare to standard Schottky diodes?

Unlike conventional planar Schottkys, this trench-structured device achieves trr = 9 ns (step recovery) and Qrr = 10 nC due to reduced carrier storage. These values are 3× faster and 40% lower than typical 100 V/3 A planar Schottkys, enabling reliable operation in 500+ kHz SMPS without oscillation or voltage spikes during turn-off.

Can PMEG100T30ELPX replace older SOD128 Schottky diodes in existing designs?

Yes - it is footprint-compatible with all SOD128-packaged Schottky rectifiers and offers superior VF, IR, and thermal resistance. Designers should verify layout thermal relief and confirm that the lower IR (0.25 µA vs. typical 1–5 µA) does not affect bias networks in precision sensing circuits.