Nexperia USA Inc. PMEG100V080ELPEZ

Overview

PMEG100V080ELPEZ from Nexperia is a low-leakage Schottky barrier rectifier optimized for high-efficiency DC-DC conversion, featuring 100 V reverse voltage rating, 8 A average forward current, and ultra-low reverse current (0.14 µA at 100 V, 25 °C). It uses clip-bonding technology in a thermally enhanced CFP15B (SOT1289B) package for high power capability and thermal stability in space-constrained SMD designs.

For engineers reviewing the PMEG100V080ELPEZ datasheet, PMEG100V080ELPEZ pinout, PMEG100V080ELPEZ application, or PMEG100V080ELPEZ equivalent, key selection criteria include leakage performance at elevated temperature, forward voltage consistency across load and junction temperature, thermal resistance to solder point (3 K/W), and suitability for OR-ing and reverse polarity protection in industrial and LED lighting power rails.

Technical Context

This Schottky rectifier employs a planar silicon die with metal-semiconductor junction architecture to achieve near-zero reverse recovery time (<10 ns) and minimal stored charge-critical for high-frequency switching topologies. Its low VF (770 mV typ. at 8 A, 25 °C) and tight VF distribution reduce conduction losses in synchronous rectification and freewheeling paths.

The device's thermal design centers on a cathode-tab-integrated clip-bond structure that delivers Rth(j–sp) = 3 K/W, enabling direct heat transfer from junction to PCB copper. This supports stable operation up to Tj = 175 °C while maintaining IR < 1.5 mA at 125 °C and VR = 100 V-essential for reliability in thermally demanding LED drivers and SMPS secondary-side rectification.

Key Specifications

Pinout & Package

Encapsulated in a CFP15B (SOT1289B) surface-mount plastic package measuring 5.8 × 4.3 × 0.95 mm with 2.13 mm lead pitch and exposed cathode thermal tab. The package features flat leads and ultra-thin profile for automated assembly and high-density board layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with VS-8EWH10FN-M3 and NSR10H100MXT5G, PMEG100V080ELPEZ delivers superior thermal management (3 K/W vs. ≥12 K/W), tighter leakage control (0.14 µA vs. ≥0.2 µA), and higher current density in a 40% smaller footprint-making it the optimal choice for thermally constrained, high-reliability 8 A rectification.

Availability

PMEG100V080ELPEZ is available at Aetrix Electronics and suitable for high-efficiency DC-DC conversion, LED lighting power supplies, and switch mode power supply designs requiring stable component supply, consistent parametric performance across temperature, and long-term manufacturing continuity.

Supply support for PMEG100V080ELPEZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET devices with focus on efficiency, miniaturization, and robustness for industrial and consumer applications.

This device belongs to Nexperia's low-leakage Schottky rectifier product line, engineered specifically for high-frequency, high-reliability power conversion where minimal reverse current and stable forward voltage across temperature are critical.

FAQ

What is the maximum junction temperature rating for PMEG100V080ELPEZ?

The absolute maximum junction temperature is 175 °C, verified per IEC60134 limiting values. Operation at this temperature requires strict adherence to thermal design rules-including use of ≥1 cm² copper pad for the cathode tab and maintenance of Rth(j–sp) ≤ 3 K/W-to prevent irreversible degradation of leakage current or forward voltage characteristics.

Does PMEG100V080ELPEZ have a specified reverse recovery time (trr)?

Yes, trr is specified as <10 ns under step-recovery test conditions (IF = 0.5 A, IR = 0.5 A, IR(meas) = 0.1 A, Tj = 25 °C). As a Schottky barrier device, it exhibits no minority-carrier storage, resulting in negligible reverse recovery charge-enabling clean switching in >1 MHz topologies without snubber networks.

Can PMEG100V080ELPEZ be used in automotive applications?

No-PMEG100V080ELPEZ is not AEC-Q200 qualified and is explicitly designated for industrial, computing, and consumer applications. Nexperia's datasheet states it is "non-automotive qualified" and warns against use in safety-critical systems; automotive designs require Q-grade equivalents with validated PPAP documentation and extended temperature screening.

How does the dual-anode pinning (Pins 1 and 2) affect PCB layout?

The dual-anode configuration reduces effective series resistance and improves current distribution uniformity. Layout must connect both Pins 1 and 2 to the same net-typically a wide copper pour-and avoid routing traces that create imbalance. Thermal relief should be minimized on both anode pads to maintain symmetric thermal coupling and prevent localized heating under high IF.