Nexperia USA Inc. PMEG2010EPK,315

Overview

PMEG2010EPK from Nexperia is a planar Schottky barrier rectifier with integrated guard ring for stress protection, designed for low-voltage, high-efficiency DC-to-DC conversion and reverse polarity protection in space-constrained mobile and portable electronics. It delivers 1 A average forward current at ≤415 mV forward voltage (IF = 1 A), 20 V reverse voltage rating, and ultra-fast 4 ns reverse recovery time - enabling high-frequency switching in compact SOD1608 (DFN1608D-2) packages.

For engineers reviewing the PMEG2010EPK datasheet, PMEG2010EPK pinout, PMEG2010EPK application, or PMEG2010EPK equivalent, key selection criteria include its ultra-low VF at 1 A, side-wettable flanks for automated optical inspection, 0.37 mm profile for thin-profile designs, and thermal performance on FR4 vs. ceramic PCBs.

Technical Context

This Schottky diode uses a planar silicon structure with an integrated guard ring to suppress edge breakdown and improve reliability under transient stress. Its low barrier height enables sub-415 mV forward drop at full rated current while maintaining low reverse leakage (≤250 µA at VR = 10 V).

The device operates with zero minority-carrier storage, eliminating reverse recovery charge and enabling true nanosecond-scale trr (4 ns typical). Its DFN1608D-2 package features solderable side pads and a 0.94 mm pitch, optimized for reflow-compatible assembly and AOI verification.

Key Specifications

Pinout & Package

Encapsulated in a leadless ultra-small DFN1608D-2 (SOD1608) surface-mount plastic package with visible and solderable side pads. Package dimensions: 1.6 mm × 0.8 mm × 0.37 mm (typ.), 0.94 mm pitch, and cathode-marked top-side bar.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with RB050M-30 and SS12, PMEG2010EPK provides superior power density (1.28 mm² vs. 5.6 mm²/2.8 mm²), 75 mV lower VF at 1 A, and manufacturability advantages via side-wettable flanks - making it optimal for next-gen portable and wearables where board area and efficiency are constrained.

Availability

PMEG2010EPK is available at Aetrix Electronics and suitable for mobile LED backlighting, USB-C power path protection, and wearable sensor power rails requiring stable component supply across high-mix, low-volume production cycles.

Supply support for PMEG2010EPK includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET devices with focus on efficiency, miniaturization, and manufacturability.

This part belongs to Nexperia's low-VF Schottky rectifier product line, engineered specifically for space- and power-constrained portable electronics where ultra-small packaging and minimal forward loss are critical.

FAQ

What is the maximum junction temperature and how does it affect continuous current rating?

The absolute maximum junction temperature is 150 °C. At Tamb = 70 °C on FR4 PCB with standard footprint, the device sustains 1 A average forward current continuously. Exceeding this limit reduces IF(AV) linearly per Fig. 10–12; derating to 0.7 A is required at Tamb = 100 °C to maintain Tj ≤ 150 °C.

Does PMEG2010EPK support automotive applications?

No. Per Nexperia's revision history (v.4, Sept 2025), PMEG2010EPK is explicitly non-automotive qualified. It lacks AEC-Q200 stress testing and automotive-grade process controls. For automotive use, Nexperia recommends its -Q qualified equivalents such as PMEG2010EPK-Q.

How does the guard ring improve reliability in portable electronics?

The integrated guard ring mitigates edge-induced avalanche breakdown during voltage transients (e.g., ESD events or inductive kickback), allowing the device to sustain full 20 V reverse rating without localized hot spots. This extends lifetime in handheld devices subject to mechanical shock and electrostatic discharge.

Can PMEG2010EPK be used in reverse-biased protection configurations?

Yes - its low IR (≤250 µA at VR = 10 V) and fast trr (4 ns) make it ideal for reverse polarity protection. When placed anode-to-input, it blocks reverse current while introducing minimal voltage drop (<415 mV) during normal operation, preserving system efficiency without requiring active control circuitry.