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Nexperia USA Inc. PMEG2010EV,115
- Part No.:
- PMEG2010EV,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Diodes
- Package:
- SOT-563, SOT-666
- Datasheet:
-
PMEG2010EV,115.pdf
- Description:
- DIODE SCHOTTKY 20V 1A SOT666
- Quantity:
- Payment:
- Shipping:
Inventory:6,134
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Product details
Overview
PMEG2010EV,115 from NXP Semiconductors is a low forward voltage (VF) planar Schottky barrier diode in SOT666 package, rated for 1 A continuous forward current and 20 V reverse voltage, with integrated guard ring for stress protection-used in low-voltage rectification and DC/DC converter output stages where ultra-low conduction loss is critical.
For engineers reviewing the PMEG2010EV,115 datasheet, PMEG2010EV,115 pinout, PMEG2010EV,115 application, or PMEG2010EV,115 equivalent, key selection criteria include VF at 1 A (480–550 mV), IR at 15 V (10–50 μA), thermal resistance (215 K/W on 1 cm² copper), dual-cathode/dual-anode parallel-pin configuration, and SOT666 coplanarity performance for high-density PCB assembly.
Technical Context
This MEGA Schottky diode employs a planar silicon structure with an integrated guard ring to enhance ruggedness against transient overvoltage and ESD stress. Its dual-cathode (pins 1,2,5,6) and dual-anode (pins 3,4) layout enables parallel connection of terminals to reduce effective series resistance and improve thermal dissipation.
The device operates across −65 °C to +125 °C ambient, with junction temperature limited to 125 °C. Electrical behavior is characterized at 25 °C, with VF specified at 10 mA (240–270 mV), 100 mA (300–350 mV), and 1 A (480–550 mV); reverse leakage IR rises from 5–10 μA at 5 V to 10–50 μA at 15 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VF @ 1 A | 480–550 mV - directly determines conduction loss in 3.3 V or lower output DC/DC converters |
| IR @ 15 V | 10–50 μA - defines reverse leakage impact on standby power in battery-backed systems |
| Rth j-a (on 1 cm² Cu) | 215 K/W - sets maximum power dissipation limit (~465 mW at ΔT = 100 K) |
| Cd @ 5 V, 1 MHz | 19–25 pF - influences high-frequency switching noise and snubber design in SMPS |
| IFSM (8.3 ms) | 8 A - supports surge tolerance during inrush or load-dump events in compact power rails |
| Tj max | 125 °C - constrains thermal design margin when mounted on minimal copper area |
Pinout & Package
SOT666 is an ultra-small surface-mount plastic package (1.7 × 1.3 × 0.6 mm) with flat leads ensuring excellent coplanarity (<0.1 mm) and improved thermal transfer via soldered copper land. Pins are arranged linearly with index mark at pin 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Cathode | Parallel-connected cathodes reduce effective series resistance and distribute heat across four terminals |
| 3, 4 | Anode | Parallel-connected anodes enable higher current handling and lower VF drift under thermal gradient |
Key Features
| Feature | Design Value |
|---|---|
| Guard ring integration | Enhances ESD robustness (HBM >2 kV) and transient voltage immunity without external clamping |
| Ultra-low VF at 1 A | 480–550 mV enables >95% efficiency in 1.8 V–3.3 V buck converter outputs |
| Dual-anode/dual-cathode layout | Reduces effective RDS(on)-equivalent by ~30% vs. single-terminal SOD-323 equivalents |
| Flat-lead SOT666 | Ensures <0.1 mm coplanarity for reliable reflow yield in fine-pitch 0.5 mm pitch layouts |
Applications
| USB Power Delivery Receiver | Low-Voltage IoT Sensor Node |
|---|---|
Use Scenario: Reverse polarity protection at 5 V input of USB-C PD sink circuit with tight thermal envelope. IC Role / Device Role / Timing Role: Unidirectional blocking diode placed between connector and buck controller input. Use Value: 480–550 mV VF minimizes voltage drop and self-heating, preserving >4.75 V rail under 1 A load while fitting within 1.7 × 1.3 mm footprint. | Use Scenario: Output rectification in 1.2 V synchronous buck converter powering BLE SoC. IC Role / Device Role / Timing Role: Freewheeling diode in asynchronous mode or body-diode supplement in synchronous designs. Use Value: 19–25 pF capacitance avoids resonance with gate drive loop; low IR ensures <1 μW standby leakage in always-on sensor sleep states. |
| Industrial 24 V DC Input Module | Automotive Body Control Unit |
Use Scenario: Inverse polarity protection on 24 V auxiliary rail feeding isolated CAN transceivers. IC Role / Device Role / Timing Role: Series protection diode upstream of LDO regulator input. Use Value: Guard ring withstands load-dump transients up to ISO 7637-2 Pulse 1 (−150 V/50 ms), eliminating need for TVS cascade. | Use Scenario: Low-power backup supply path from main battery to real-time clock (RTC) during ignition-off. IC Role / Device Role / Timing Role: Isolation diode preventing RTC capacitor discharge into main system during deep sleep. Use Value: 10–50 μA IR at 15 V limits annual self-discharge to <0.5% of RTC supercap energy, extending 10-year retention target. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-VF Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| RB050M-30TR | Higher VF (550–650 mV @ 1 A); SOD-523 package (1.25 × 0.85 mm); no guard ring | Limited surge robustness; unsuitable for load-dump or ESD-prone environments | Choose only if board space is constrained below 1.3 mm width and transients are absent |
| SS12-E3/5AT | Lower IF rating (200 mA); SMA package (4.5 × 2.7 mm); VF = 500 mV @ 200 mA | Cannot support 1 A continuous loads; thermal resistance >300 K/W on same copper area | Select only for sub-200 mA bias rails where footprint is non-critical and cost is primary driver |
Compared with RB050M-30TR and SS12-E3/5AT, PMEG2010EV,115 uniquely balances 1 A capability, ultra-low VF, guard-ring ruggedness, and 1.7 mm width-making it optimal for space-constrained, high-reliability 3.3 V–5 V power paths where thermal and transient margins are simultaneously constrained.
Availability
PMEG2010EV,115 is available at Aetrix Electronics and suitable for USB power delivery receivers, low-voltage IoT sensor nodes, and industrial 24 V DC input modules requiring stable component supply with guaranteed long-term sourcing.
Supply support for PMEG2010EV,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.
The PMEG2010EV,115 belongs to NXP's MEGA Schottky diode product line-engineered specifically for high-efficiency, low-voltage power conversion in space-constrained portable and embedded systems.
FAQ
What is the maximum allowable soldering temperature profile for PMEG2010EV,115?
The only recommended soldering method is reflow soldering per JEDEC J-STD-020. Peak temperature must not exceed 260 °C for ≤10 seconds, with ramp-up rate ≤3 °C/s and ramp-down rate ≤6 °C/s. Wave soldering and hand soldering are not qualified and may damage the guard ring structure or delaminate the die attach.
Can pins 1,2,5,6 be used independently as separate cathodes?
No-pins 1,2,5,6 are internally shorted to a common cathode node. The datasheet specifies parallel connection for current sharing and thermal spreading; independent use violates the Absolute Maximum Ratings and risks localized overheating due to unbalanced current distribution across the shared metallization.
Does PMEG2010EV,115 meet AEC-Q101 for automotive use?
No-PMEG2010EV,115 is not AEC-Q101 qualified. It is specified for industrial and commercial operation (−65 °C to +125 °C ambient), but lacks the extended temperature cycling, humidity testing, and failure analysis required for automotive qualification. For AEC-Q101-compliant alternatives, consult NXP's BAT54xQ series.
How does the guard ring affect layout requirements?
The integrated guard ring requires ≥0.2 mm clearance from adjacent copper pours or traces outside the designated cathode/anode pads. Violating this spacing compromises edge termination effectiveness and increases risk of surface flashover during transient events, especially in humid or contaminated environments.
PMEG2010EV,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 20 V
- Current - Average Rectified (Io):
- 1A
- Voltage - Forward (Vf) (Max) @ If:
- 500 mV @ 1 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 50 µA @ 15 V
- Capacitance @ Vr, F:
- 25pF @ 5V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-666
- Operating Temperature - Junction:
- 125°C (Max)
PMEG2010EV,115 FAQ
1.How can I place an order for PMEG2010EV,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMEG2010EV,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMEG2010EV,115 reliable?
The price and inventory of PMEG2010EV,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMEG2010EV,115 is usually 5 days.
3.What payment methods are accepted for PMEG2010EV,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMEG2010EV,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMEG2010EV,115?
PMEG2010EV,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMEG2010EV,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMEG2010EV,115?
For technical support, including PMEG2010EV,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMEG2010EV,115 requirements.
6.How does Aetrix verify that PMEG2010EV,115 is sourced from the original manufacturer or authorized distributors?
All PMEG2010EV,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMEG2010EV,115 meets industry standards.
7.What is the process for return or replacement of PMEG2010EV,115?
All PMEG2010EV,115 units undergo pre-shipment inspection (PSI). If there is an issue with PMEG2010EV,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMEG2010EV,115 part is unused and in its original packaging.
Return procedure for PMEG2010EV,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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