Nexperia USA Inc. PMEG3002AEBF

Overview

PMEG3002AEBF from Nexperia is a planar Schottky barrier diode with integrated guard ring for stress protection, rated at 30 V reverse voltage and 200 mA forward current, featuring ultra-low 420–480 mV forward voltage at 200 mA. It operates in ultra-small SOD523 (SC-79) package and serves as a low-loss rectifier or polarity protection device in space-constrained DC/DC converters and portable electronics.

For engineers reviewing the PMEG3002AEBF datasheet, PMEG3002AEBF pinout, PMEG3002AEBF application, or PMEG3002AEBF equivalent, key selection criteria include forward voltage at 200 mA, reverse leakage at 10 V, junction-to-ambient thermal resistance, diode capacitance at 1 V, and SOD523 footprint compatibility with high-density PCB layouts.

Technical Context

This Schottky diode uses a planar silicon structure with an integrated guard ring to suppress edge breakdown and improve reliability under transient stress. Its low VF stems from optimized metal–semiconductor interface and minimal series resistance, enabling efficient operation at low voltages down to 0.1 V forward drop at 0.1 mA.

Thermal performance is defined by a 450 K/W junction-to-ambient resistance on FR4 with standard single-sided copper, and it supports repetitive peak forward current up to 300 mA (tp ≤ 1 ms, δ ≤ 0.5) and non-repetitive surges up to 1 A (tp = 8.3 ms, half-sine).

Key Specifications

Pinout & Package

Encapsulated in the ultra-compact SOD523 (SC-79) surface-mount plastic package, the PMEG3002AEBF features a two-terminal configuration with cathode marked by a bar on the top surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Compared with RB520S-30T1G and NSR0230HT1G, PMEG3002AEBF uniquely balances ultra-low VF, guard-ring-enhanced reliability, and strict 200 mA DC rating-making it optimal for space-limited, low-quiescent-power systems where thermal margin and transient resilience are co-prioritized.

Availability

PMEG3002AEBF is available at Aetrix Electronics and suitable for USB port protection, low-voltage DC/DC rectification, and signal-level clamping requiring stable component supply across production lifecycles.

Supply support for PMEG3002AEBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.

The PMEG3002AEBF belongs to Nexperia's low-VF Schottky diode portfolio, engineered specifically for miniaturized power management in battery-powered and thermally constrained applications where conduction loss and board area are primary constraints.

FAQ

What is the maximum ambient temperature for continuous operation?

The PMEG3002AEBF supports ambient temperatures from −65 °C to +125 °C. At maximum rated 200 mA forward current, junction temperature must remain ≤125 °C-requiring ≤111 mW total power dissipation, which corresponds to ≤25 °C ambient when mounted on standard FR4 with 450 K/W thermal resistance.

Does the SOD523 package support automated optical inspection (AOI)?

Yes-the SOD523 package features a visible cathode marking bar and consistent 1.2 × 0.8 mm body geometry, enabling reliable detection by standard AOI systems calibrated for 0201-class components. The flat lead profile and tin-plated terminations also ensure high solder joint contrast.

Can PMEG3002AEBF replace a standard silicon diode in a 5 V rail?

Yes-it provides superior performance: at 200 mA, its 420–480 mV VF yields ~75% less conduction loss than a typical 1N4148 (VF ≈ 1.2 V). However, its 30 V VR limits use to rails ≤30 V, and reverse leakage (≤10 µA) is higher than silicon-so verify standby current budgets in always-on designs.

Is the guard ring structure visible in X-ray or cross-section analysis?

No-the guard ring is a diffused or implanted region beneath the silicon surface and not optically or X-ray resolvable in packaged devices. Its presence is verified indirectly via improved surge test performance (e.g., higher IFSM rating and stable VR after repetitive 1 A pulses), per Nexperia's qualification reports.