Nexperia USA Inc. PMEG3002AEL,315

Overview

PMEG3002AEL,315 from Nexperia is a planar Schottky barrier diode with integrated guard ring for stress protection, rated for 30 V reverse voltage and 0.2 A continuous forward current, featuring ultra-low forward voltage (125–480 mV across 0.1–200 mA) in a leadless SOD882 package; used in low-power DC-DC converters and voltage clamping circuits.

For engineers reviewing the PMEG3002AEL,315 datasheet, PMEG3002AEL,315 pinout, PMEG3002AEL,315 application, or PMEG3002AEL,315 equivalent, key selection criteria include forward voltage at low currents (<250 mV @ 1 mA), reverse leakage (<10 µA @ 30 V), diode capacitance (17–25 pF), thermal resistance (500 K/W), and SOD882 footprint compatibility with space-constrained portable electronics.

Technical Context

This Schottky rectifier employs a planar MEGA structure with an integrated guard ring to suppress edge breakdown and improve reliability under transient stress. Its low VF enables high efficiency in sub-1 W power conversion stages where conduction loss dominates.

Designed for operation up to 150 °C junction temperature, it exhibits thermally sensitive reverse leakage-rising from 2.5 µA @ 10 V to 50 µA @ 30 V at 25 °C-and requires thermal run-away consideration in high-reverse-bias applications due to significant PR contribution to total losses.

Key Specifications

Pinout & Package

Encapsulated in a leadless ultra-small SOD882 plastic package (1.0 × 0.6 × 0.5 mm), with exposed die pad for thermal conduction and top-side marking bar indicating cathode polarity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with PMEG3002AEL,315, RB520S-30T1G trades efficiency for smaller height, while NSR0230HT1G prioritizes ultra-low leakage over forward loss-making PMEG3002AEL,315 optimal where balanced VF/IR and SOD882 thermal performance are required.

Availability

PMEG3002AEL,315 is available at Aetrix Electronics and suitable for USB port protection, wearable power management, DC-DC converter output rectification, and low-voltage logic-level clamping requiring stable component supply and consistent SOD882 assembly behavior.

Supply support for PMEG3002AEL,315 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET devices optimized for efficiency-critical applications in automotive, industrial, and mobile markets.

PMEG3002AEL,315 belongs to Nexperia's MEGA Schottky rectifier product line, engineered specifically for ultra-low forward voltage and robust transient handling in miniaturized power management systems.

FAQ

Is PMEG3002AEL,315 suitable for automotive applications?

Yes. It is qualified for operation from −65 °C to +150 °C junction temperature and features a guard ring for enhanced transient robustness-meeting AEC-Q101 stress test requirements when mounted per SOD882 standard footprint on FR4 with 60 μm copper. Its 30 V VR rating supports 12 V automotive rail clamping.

What is the recommended PCB layout for thermal performance?

Use the SOD882 standard mounting footprint per Nexperia's outline drawing: 0.62 mm pad width, 1.02 mm pad length, 0.55 mm center-to-center spacing. Add ≥2 thermal vias (0.3 mm diameter) under the exposed die pad connected to internal ground plane to reduce Rth(j-a) by up to 40% in typical 4-layer boards.

How does forward voltage vary with temperature?

VF decreases by approximately −1.8 mV/°C across 25–125 °C, as confirmed by Figure 1 in the datasheet. At 100 mA, VF drops from 375 mV at 25 °C to ~320 mV at 125 °C-reducing conduction loss in thermally elevated environments like enclosed battery packs.

Can PMEG3002AEL,315 replace a standard silicon diode in low-voltage rectification?

Yes-its 125–480 mV VF is 50–70% lower than typical silicon diodes (700–1100 mV), enabling higher efficiency in ≤5 V systems. However, its higher reverse leakage (up to 50 µA @ 30 V) requires verification in high-impedance bias networks where leakage could affect accuracy.