Nexperia USA Inc. PMEG3010BEA,115

Overview

PMEG3010BEA from Nexperia is a 1 A, 30 V low-forward-voltage Schottky barrier rectifier in SOD323 package, featuring integrated guard ring for stress protection and optimized for high-efficiency DC-DC conversion, voltage clamping, and low-voltage blocking applications in space-constrained portable electronics.

For engineers reviewing the PMEG3010BEA datasheet, PMEG3010BEA pinout, PMEG3010BEA application, or PMEG3010BEA equivalent, key selection criteria include its 450–560 mV forward voltage at 1 A, ≤150 µA reverse leakage at 30 V, 55–70 pF junction capacitance, thermal resistance of 210 K/W (junction-to-solder-point), and SOD323 footprint compatibility with ultra-compact PCB layouts.

Technical Context

This MEGA-series Schottky diode uses planar technology with an integrated guard ring to suppress edge breakdown and improve reliability under transient stress. Its low VF enables reduced conduction loss in synchronous rectification and OR-ing circuits, while its 150 °C maximum junction temperature supports operation in thermally dense environments.

The device exhibits strong temperature dependence in both forward voltage (VF decreases with rising Tj) and reverse current (IR increases exponentially with Tj), requiring thermal-aware layout-especially given its 90 K/W junction-to-cathode-tab thermal resistance and sensitivity to thermal runaway under high VR conditions.

Key Specifications

Pinout & Package

Encapsulated in a SOD323 (SC-76) surface-mount plastic package measuring 1.7 mm × 1.25 mm × 0.95 mm with 1.3 mm lead pitch, the PMEG3010BEA uses a two-terminal configuration optimized for minimal board area and thermal path efficiency.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with RB520S-30T1G and SS12, the PMEG3010BEA delivers the lowest VF in SOD323 format and best thermal performance per unit area, making it optimal for miniaturized, thermally constrained 30 V-class rectification where leakage and capacitance are critical.

Availability

PMEG3010BEA is available at Aetrix Electronics and suitable for USB PD interface protection, wireless sensor node power management, point-of-load DC-DC rectification, and ESD-sensitive I/O clamping requiring stable component supply and consistent SOD323 sourcing.

Supply support for PMEG3010BEA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-volume, high-reliability discrete, logic, and MOSFET solutions, headquartered in Nijmegen, Netherlands.

The MEGA Schottky series targets ultra-low VF and compact packaging for efficiency-critical power management in consumer, computing, and industrial applications-designed specifically to replace older Schottky families with improved thermal robustness and stress immunity.

FAQ

What is the maximum continuous forward current for PMEG3010BEA under standard PCB conditions?

The PMEG3010BEA supports 1 A continuous forward current when mounted on FR4 PCB with single-sided 1 oz copper, tin-plated, and standard SOD323 footprint. Exceeding this requires enhanced thermal relief-such as increased cathode copper area or forced airflow-to maintain Tj ≤ 150 °C and prevent thermal runaway.

Does PMEG3010BEA have automotive qualification?

No. The PMEG3010BEA is explicitly marked as non-automotive qualified in its revision history (v.4, October 2022). It lacks AEC-Q200 stress testing and is intended for industrial, computing, and consumer applications only. For automotive use, Nexperia offers the PMEG3010BEA-Q variant with full qualification.

How does the guard ring affect reliability in real-world PCB layouts?

The integrated guard ring prevents premature edge breakdown during voltage transients by redistributing electric field intensity away from the silicon periphery. In practice, this extends lifetime under repeated 30 V reverse-bias surges and improves yield in reflow-soldered assemblies where solder fillet geometry can otherwise concentrate field stress at the cathode edge.

Can PMEG3010BEA be used in place of a standard 1N5819 in SOD-123?

No-it is not a drop-in replacement. While both are 30 V/1 A Schottkys, PMEG3010BEA uses SOD323 (1.7 × 1.25 mm), whereas 1N5819 in SOD-123 measures 2.8 × 1.7 mm. The smaller footprint requires PCB redesign, and its lower VF (450 mV vs. ~550 mV) and tighter IR spec offer measurable efficiency gains only if layout and thermal design are adapted accordingly.