Nexperia USA Inc. PMEG4010ETP,115

Overview

PMEG4010ETP from Nexperia is a planar Schottky barrier rectifier with integrated guard ring for stress protection, designed for high-temperature rectification in compact SMD power supplies. It delivers 1 A average forward current at ≤40 V reverse voltage, 430–490 mV forward voltage at 1 A and 25 °C, and operates up to 175 °C junction temperature - enabling use in automotive under-hood DC/DC converters and industrial high-efficiency SMPS.

For engineers reviewing the PMEG4010ETP datasheet, PMEG4010ETP pinout, PMEG4010ETP application, or PMEG4010ETP equivalent, key selection criteria include low VF at high Tj, clip-bonded thermal performance, SOD128 package footprint compatibility, and reverse leakage stability across −40 °C to 125 °C.

Technical Context

This Schottky diode uses a planar die structure with an integrated guard ring to suppress edge breakdown and improve surge robustness. Its clip-bonding interconnect reduces thermal resistance and enables higher power density versus wire-bonded equivalents.

It exhibits strong temperature-dependent VF reduction (330–380 mV at 1 A and 125 °C), low reverse leakage (≤6 mA at 40 V and 125 °C), and 130 pF capacitance at 1 V reverse bias - making it suitable for high-frequency switching topologies where conduction loss and switching loss trade-offs are critical.

Key Specifications

Pinout & Package

Encapsulated in the CFP5 (SOD128) surface-mount plastic package: 3.8 mm × 2.6 mm × 1.0 mm body, 4 mm pitch, flat lead profile optimized for reflow and wave soldering. Cathode marked by bar on top surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with NSS40100PD1T1G and VS-1EQH04-M3/84A, PMEG4010ETP offers the lowest VF at high temperature and smallest thermal resistance in its class - delivering measurable efficiency gain and board space savings in next-generation compact power designs.

Availability

PMEG4010ETP is available at Aetrix Electronics and suitable for automotive DC/DC converters, industrial SMPS output stages, and reverse polarity protection circuits requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for PMEG4010ETP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions - serving automotive, industrial, and consumer markets with scalable manufacturing and rigorous AEC-Q200 alignment.

This device belongs to Nexperia's high-temperature Schottky rectifier product line, engineered specifically for efficiency-critical, space-constrained power conversion where thermal resilience and low VF are non-negotiable design requirements.

FAQ

What is the maximum allowable solder point temperature during reflow for PMEG4010ETP?

The datasheet specifies Tsp ≤ 165 °C for 0.5 duty cycle square-wave conditions. For standard lead-free reflow profiles, peak temperature must not exceed 260 °C for ≤10 seconds at the solder joint, with ramp rates limited to ≤3 °C/s per JEDEC J-STD-020. The cathode tab's clip-bond construction tolerates localized thermal stress better than wire-bonded alternatives.

Does PMEG4010ETP meet AEC-Q200 requirements for automotive use?

No - the official Nexperia datasheet states "Non-automotive qualified products" and does not list AEC-Q200 qualification. While its 175 °C Tj rating and robust construction make it suitable for many under-hood applications, formal automotive qualification requires separate stress testing and documentation not provided for this part number.

How does the guard ring affect reverse voltage performance?

The integrated guard ring mitigates electric field crowding at the silicon periphery, raising the effective breakdown voltage margin and improving consistency of VR across production lots. This results in tighter distribution of reverse leakage (IR) at 40 V and enhanced long-term stability under thermal cycling and humidity exposure.

Can PMEG4010ETP replace a standard 1N5819 in existing designs?

Yes - with caveats. Its SOD128 footprint differs from DO-41 (1N5819), requiring PCB layout change. Electrically, it offers lower VF (430 mV vs. ~550 mV), higher Tj (175 °C vs. 125 °C), and superior thermal resistance. However, its 50 A IFSM is lower than 1N5819's 60 A, so surge immunity must be verified in high-energy transient environments.