Nexperia USA Inc. PMEG4030ER,115

Overview

PMEG4030ER from Nexperia is a planar Schottky barrier rectifier with integrated guard ring for stress protection, designed for low-voltage, high-efficiency DC-to-DC conversion and reverse polarity protection. It delivers 3 A average forward current at ≤40 V reverse voltage, features 460–540 mV forward voltage at 3 A/25 °C, and uses clip-bond technology in a SOD123W (CFP3) package for enhanced thermal performance in space-constrained power rails.

For engineers reviewing the PMEG4030ER datasheet, PMEG4030ER pinout, PMEG4030ER application, or PMEG4030ER equivalent, key selection criteria include low VF optimization for efficiency-critical 5 V/3.3 V SMPS outputs, thermal derating on FR4 vs. ceramic PCBs, cathode-marked SOD123W layout compatibility, and µA-level reverse leakage at 40 V for battery-backed systems.

Technical Context

This Schottky diode employs a planar silicon junction with an integrated guard ring to suppress edge breakdown and improve reliability under repetitive surge stress. Its clip-bond construction reduces thermal resistance and enables higher power density versus wire-bonded equivalents in the same SOD123W footprint.

The device operates with minimal forward conduction loss across -40 °C to 150 °C junction temperature range, and exhibits low 95 pF capacitance at 10 V reverse bias-critical for minimizing switching node ringing in high-frequency buck converters operating above 500 kHz.

Key Specifications

Pinout & Package

Encapsulated in a SOD123W (CFP3) surface-mount plastic package measuring 2.6 mm × 1.7 mm × 1.0 mm, with flat leads optimized for reflow soldering and thermal pad attachment. The cathode is marked by a bar on the component body.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with NSS40300MUTBG and VS-3EYH04-M3/54, the PMEG4030ER offers the lowest VF and best thermal performance in its class, making it optimal for high-density, high-efficiency 5 V/3.3 V power delivery where board space and thermal headroom are constrained.

Availability

PMEG4030ER is available at Aetrix Electronics and suitable for industrial power supplies, USB-C peripheral designs, and battery-backed IoT sensor nodes requiring stable component supply and consistent parametric performance across production lots.

Supply support for PMEG4030ER includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors-including logic, discrete, and MOSFETs-with manufacturing rooted in process discipline and automotive-grade quality systems.

The PMEG4030ER belongs to Nexperia's low-VF Schottky rectifier product line, engineered specifically for efficiency-critical 5–24 V DC-DC conversion in consumer, industrial, and computing applications where thermal density and standby leakage are design constraints.

FAQ

What is the maximum allowable solder point temperature for PMEG4030ER during reflow?

The device is qualified for standard lead-free reflow per J-STD-020, with peak temperature up to 260 °C for ≤30 seconds. Thermal resistance from junction to solder point (Rth(j-sp)) is 18 K/W when mounted on 1 cm² cathode pad, allowing safe operation up to 150 °C junction temperature under typical reflow conditions.

Does PMEG4030ER meet AEC-Q101 for automotive use?

No. The latest revision (v.4, Jan 2023) explicitly removed "AEC-Q101 qualified" from its features. This part is intended for industrial, computing, and consumer applications only; Nexperia does not warrant suitability for automotive safety-critical systems or temperature cycling beyond -40 °C to +125 °C ambient.

How does the guard ring affect reverse voltage reliability?

The integrated guard ring redistributes electric field at the silicon edge, preventing premature avalanche breakdown at rated VR. This allows the device to sustain 40 V reverse bias with <100 µA leakage at 25 °C and maintain parameter stability after 10⁵ cycles of 40 V/100 ns transients-verified per IEC 61000-4-5 surge testing.

Can PMEG4030ER replace a standard 1N5822 in existing designs?

Yes, with layout adaptation: both are 3 A/40 V Schottky diodes, but PMEG4030ER uses SOD123W (2.6 mm × 1.7 mm) vs. 1N5822's DO-201AD (5.3 mm × 2.7 mm). The smaller footprint requires updated land pattern and stencil design, yet delivers 120 mV lower VF and 30 % better thermal resistance-justifying redesign for efficiency gains.