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NXP Semiconductors PMEG6010AESB315
- Part No.:
- PMEG6010AESB315
- Manufacturer:
- NXP Semiconductors
- Category:
- Single Diodes
- Package:
- 2-XDFN
- Datasheet:
-
PMEG6010AESB315.pdf
- Description:
- RECTIFIER DIODE, SCHOTTKY
- Quantity:
- Payment:
- Shipping:
Inventory:7,242
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Product details
Overview
PMEG6010AESB from Nexperia is a 60 V, 1 A planar MEGA Schottky barrier rectifier in a leadless DSN1006-2 (SOD993) package, featuring low forward voltage (525 mV typ. at 1 A), low reverse current (185 µA typ. at 60 V), and ultra-thin profile (270 µm). It serves as a high-efficiency output rectifier in compact DC-DC converters for portable electronics.
For engineers reviewing the PMEG6010AESB datasheet, PMEG6010AESB pinout, PMEG6010AESB application, or PMEG6010AESB equivalent, key selection criteria include forward voltage drop under 1 A load, thermal resistance to solder point (15 K/W), reverse recovery time (2.4 ns), diode capacitance (20 pF at 10 V), and compatibility with ultra-small PCB footprints requiring <1.0 mm × 0.6 mm area.
Technical Context
This Schottky rectifier uses a planar MEGA structure with integrated guard ring for enhanced stress protection and stable reverse leakage across temperature. Its low VF and sub-3 ns trr enable high-frequency switching in synchronous buck topologies without significant conduction or switching losses.
The DSN1006-2 package provides direct thermal path from junction to solder point (Rth(j-sp) = 15 K/W) and supports reflow soldering on FR4 or ceramic PCBs. Device operation is validated up to 150 °C junction temperature with average forward current rated at 1 A under square-wave conditions (δ = 0.5, f = 20 kHz).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 60 V - Maximum blocking capability for 48 V input rails and transient clamping in DC-DC stages. |
| Average Forward Current (IF(AV)) | 1 A - Sustained output rectification current in continuous conduction mode at Tsp ≤ 140 °C. |
| Forward Voltage (VF) | 525 mV (typ. at 1 A, 25 °C) - Minimizes conduction loss and improves efficiency in low-voltage, high-current paths. |
| Reverse Recovery Time (trr) | 2.4 ns - Enables ultra-high-frequency switching (>1 MHz) with negligible reverse recovery charge. |
| Diode Capacitance (Cd) | 20 pF (at 10 V, 1 MHz) - Reduces capacitive switching loss and EMI in fast-edge applications. |
| Thermal Resistance (Rth(j-sp)) | 15 K/W - Direct thermal path to PCB solder pad enables high power density without external heatsinking. |
| Package Dimensions | 1.0 × 0.6 × 0.27 mm - Fits space-constrained mobile and wearable PCB layouts with minimal keep-out area. |
Pinout & Package
DSN1006-2 (SOD993) is a leadless, ultra-small surface-mount package with body dimensions of 1.0 mm × 0.6 mm × 0.27 mm and a transparent top view. The cathode is marked by a bar on the device top surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode (K) | Output node in forward conduction; connects to ground or low-side return path in buck converters. |
| 2 | Anode (A) | Input node in forward conduction; ties to switch node or inductor output in DC-DC topologies. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated guard ring | Improves ruggedness against voltage transients and localized E-field stress during reverse bias. |
| Low VF at 1 A | Reduces forward conduction loss to ~0.525 W, critical for thermally constrained battery-powered systems. |
| Ultra-low trr (2.4 ns) | Eliminates reverse recovery tail current, enabling clean switching edges and reduced gate drive burden. |
| 270 µm package height | Supports ultra-thin end products such as smartphones, TWS earbuds, and slim IoT sensors. |
| 15 K/W Rth(j-sp) | Enables >1 W dissipation on standard FR4 with 1 cm² copper pads-no thermal vias required. |
Applications
| Mobile LED Backlighting | USB-C Power Delivery Rectification |
|---|---|
Use Scenario: Boost converter driving white LEDs in smartphone displays with tight height constraints. IC Role / Device Role / Timing Role: Output rectifier in high-frequency (2–3 MHz) boost stage, handling peak currents up to 1.4 A. Use Value: 525 mV VF minimizes voltage headroom loss, extending LED string length; 2.4 ns trr prevents switching node ringing. |
Use Scenario: Secondary-side synchronous rectification in 20–100 W USB-C PD adapters. IC Role / Device Role / Timing Role: Low-loss freewheeling diode replacing MOSFETs in cost-sensitive designs where gate drive complexity must be avoided. Use Value: 60 V VR rating covers 20 V output + margin; 185 µA IR ensures low standby leakage in no-load conditions. |
| Wearable Sensor Power Supply | Industrial IoT Node DC-DC Stage |
Use Scenario: 3.3 V/1 A buck converter powering BLE SoCs and MEMS sensors in hearables. IC Role / Device Role / Timing Role: Output rectifier operating at 1.5 MHz with 0.5 duty cycle, subject to ambient temperatures up to 85 °C. Use Value: 1.0 × 0.6 mm footprint saves >40% board area vs. SOD-123; 270 µm height avoids interference with stacked components. |
Use Scenario: Isolated flyback auxiliary supply (5 V/0.5 A) for PLC I/O modules in factory automation. IC Role / Device Role / Timing Role: Primary-side snubber clamp and secondary-side rectifier in dual-role configuration. Use Value: Guard ring ensures reliability under repetitive surge events (IEC 61000-4-5); 150 °C Tj rating supports extended operation in sealed enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| RB050M-30TR | Higher VF (650 mV typ. at 1 A), larger SOD-523 package (1.25 × 0.85 mm), no guard ring. | Less suitable for >1 MHz switching due to higher trr (~5 ns) and lower thermal performance (Rth(j-a) ≈ 300 K/W). | Choose RB050M-30TR only if board layout allows larger footprint and thermal budget permits higher conduction loss. |
| SS12HE3/5BT | Same 60 V/1 A rating but SMA package (4.5 × 2.7 mm), VF = 550 mV typ., trr = 3.5 ns, Rth(j-a) = 120 K/W. | Requires significantly more PCB area and suffers higher thermal resistance-unsuitable for ultra-thin or high-density designs. | Select SS12HE3/5BT only when mechanical robustness or hand-soldering is prioritized over size and thermal efficiency. |
Compared with RB050M-30TR and SS12HE3/5BT, PMEG6010AESB delivers superior power density via its 1.0 × 0.6 mm footprint, lowest VF among comparables, and best thermal path to PCB-making it optimal for space- and efficiency-critical DC-DC outputs.
Availability
PMEG6010AESB is available at Aetrix Electronics and suitable for mobile LED backlighting, USB-C power delivery rectification, and wearable sensor power supply requiring stable component supply, consistent parametric performance, and long-term lifecycle support.
Supply support for PMEG6010AESB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential system functionality, delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.
The PMEG6010AESB belongs to Nexperia's MEGA Schottky rectifier product line, engineered specifically for high-efficiency, ultra-compact DC-DC conversion in battery-powered and space-constrained applications.
FAQ
What is the maximum junction temperature rating for PMEG6010AESB?
The absolute maximum junction temperature for PMEG6010AESB is 150 °C, as specified in the Limiting Values table. Operation at this temperature requires careful thermal design-such as using 1 cm² copper pads per terminal on FR4-to maintain Tj ≤ 150 °C under full 1 A average load. Exceeding this limit risks permanent degradation of the Schottky junction.
Does PMEG6010AESB have a built-in guard ring, and why does it matter?
Yes, PMEG6010AESB incorporates an integrated guard ring, explicitly stated in the General Description section. This feature enhances voltage ruggedness by mitigating edge breakdown under high dv/dt or transient overvoltage conditions-critical in noisy switch-mode environments like DC-DC converters and LED drivers where field crowding can cause premature failure.
Can PMEG6010AESB be used in 2 MHz switching applications?
Yes, PMEG6010AESB is qualified for use in 2 MHz switching applications. Its 2.4 ns reverse recovery time and 20 pF diode capacitance minimize switching losses and EMI generation at high frequencies. The datasheet confirms stable VF and IR performance under pulsed conditions (tp ≤ 300 µs, δ ≤ 0.02), supporting reliable operation in modern high-frequency buck and boost converters.
What is the marking code printed on PMEG6010AESB devices?
The marking code for PMEG6010AESB is "6A", as documented in Table 4 (Marking codes) of the datasheet. This two-character laser mark appears on the top surface of the DSN1006-2 package, adjacent to the cathode bar indicator, enabling visual polarity verification during manual inspection or automated optical recognition.
How does the thermal resistance from junction to solder point (Rth(j-sp)) impact PCB layout for PMEG6010AESB?
Rth(j-sp) = 15 K/W for PMEG6010AESB means heat transfers efficiently from the die directly to the PCB copper through the anode and cathode terminals. To realize this value, the layout must provide ≥1 cm² of tin-plated copper per terminal-verified in the Thermal Characteristics table footnote [5]. Smaller pads increase thermal resistance, raising Tj and derating IF(AV) below 1 A.
PMEG6010AESB315 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- 2-XDFN
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 60 V
- Current - Average Rectified (Io):
- 1A
- Voltage - Forward (Vf) (Max) @ If:
- 625 mV @ 1 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 2.4 ns
- Current - Reverse Leakage @ Vr:
- 650 µA @ 60 V
- Capacitance @ Vr, F:
- 20pF @ 10V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DSN1006-2
- Operating Temperature - Junction:
- 150°C
PMEG6010AESB315 FAQ
1.How can I place an order for PMEG6010AESB315 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMEG6010AESB315 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMEG6010AESB315 reliable?
The price and inventory of PMEG6010AESB315 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMEG6010AESB315 is usually 5 days.
3.What payment methods are accepted for PMEG6010AESB315?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMEG6010AESB315 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMEG6010AESB315?
PMEG6010AESB315 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMEG6010AESB315 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMEG6010AESB315?
For technical support, including PMEG6010AESB315 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMEG6010AESB315 requirements.
6.How does Aetrix verify that PMEG6010AESB315 is sourced from the original manufacturer or authorized distributors?
All PMEG6010AESB315 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMEG6010AESB315 meets industry standards.
7.What is the process for return or replacement of PMEG6010AESB315?
All PMEG6010AESB315 units undergo pre-shipment inspection (PSI). If there is an issue with PMEG6010AESB315, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMEG6010AESB315 part is unused and in its original packaging.
Return procedure for PMEG6010AESB315:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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