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Nexperia USA Inc. PMP4201Y/DG/B2,115

Part No.:
PMP4201Y/DG/B2,115
Manufacturer:
Nexperia USA Inc.
Category:
Bipolar Transistor Arrays
Package:
6-TSSOP, SC-88, SOT-363
Datasheet:
AetrixPMP4201Y/DG/B2,115.pdf
Description:
TRANS 2NPN 45V 100MA 6-TSSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,531

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Product details

Overview

PMP4201Y/DG/B2,115 from NXP Semiconductors is a matched dual NPN transistor in SOT363 (SC-88) package, designed for precision analog functions requiring tight parameter matching. It delivers hFE matching ratio ≥0.98, VBE matching ≤2 mV, and individual transistor VCEO = 45 V, IC = 100 mA - enabling high-fidelity current mirroring and differential amplification in space-constrained industrial and instrumentation circuits.

For engineers reviewing the PMP4201Y/DG/B2,115 datasheet, PMP4201Y/DG/B2,115 pinout, PMP4201Y/DG/B2,115 application, or PMP4201Y/DG/B2,115 equivalent, this device is selected specifically for matched-pair analog signal conditioning where thermal tracking, gain symmetry, and low-base-current error are critical - not as a general-purpose switching transistor.

Technical Context

This dual NPN transistor integrates two electrically isolated transistors on a single die within a thermally coupled SOT363 package, ensuring consistent junction temperature during operation. Its common-emitter configuration supports direct cascaded biasing, and the application-optimized pinout (pins 1/2 = bases, 3/6 = collectors, 4/5 = emitters) minimizes layout-induced mismatch in mirror and amplifier topologies.

The device operates with VCE = 5 V, IC = 2 mA test conditions for matching specifications, and exhibits fT ≥100 MHz at IC = 10 mA - confirming suitability for audio-frequency and low-speed precision analog feedback loops, not RF or high-speed digital switching.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 45 V - maximum collector-emitter voltage per transistor before breakdown; sets safe operating range for ±15 V rail applications.
IC 100 mA - continuous collector current per transistor; supports medium-signal analog stages without derating at Tamb ≤25 °C.
hFE matching ≥0.98 (hFE1/hFE2) - ensures ≤2% current gain asymmetry between transistors, critical for <1% error in current mirrors.
VBE matching ≤2 mV - guarantees sub-millivolt base-emitter voltage offset, enabling <0.1% input-referred error in differential pairs.
fT 100–250 MHz - transition frequency at IC = 10 mA; confirms stable operation up to ~10 MHz closed-loop bandwidth in amplifier designs.
Ptot (per device) 300 mW - total power dissipation limit for both transistors combined on FR4 PCB; defines thermal headroom for continuous analog biasing.

Pinout & Package

SOT363 (SC-88) plastic surface-mounted package, 6-lead, 2.2 mm × 1.35 mm footprint, 0.65 mm pitch, with pin 1 index marked. Designed for reflow soldering only; thermal resistance Rth(j-a) = 416 K/W (per device).

Pin/Terminal Circuit Role Design Meaning
1 Base TR1 Controls first transistor; routed separately to avoid crosstalk in differential bias networks.
2 Base TR2 Controls second transistor; symmetric layout with Pin 1 enables matched trace lengths for minimal VBE skew.
3 Collector TR2 Output node of second transistor; adjacent to emitter TR2 (Pin 4) for compact current mirror loop area.
4 Emitter TR2 Common emitter node for TR2; paired with Pin 3 to minimize parasitic inductance in high-gain paths.
5 Emitter TR1 Common emitter node for TR1; placed opposite Pin 4 to support symmetrical current mirror routing.
6 Collector TR1 Output node of first transistor; positioned diagonally across from Pin 3 to balance thermal coupling in matched operation.

Key Features

Feature Design Value
Current gain matching hFE1/hFE2 ≥0.98 ensures ≤2% gain error in active loads and cascode current sources.
Base-emitter voltage matching VBE1−VBE2 ≤2 mV enables sub-0.1% input offset in discrete op-amp input stages.
Fully isolated internal structure Prevents leakage coupling between transistors, preserving DC accuracy in high-impedance sensor interfaces.
Application-optimized pinout Pin arrangement minimizes PCB trace length asymmetry in current mirror layouts, reducing layout-induced mismatch.

Applications

Current Mirror Differential Amplifier

Use Scenario: Precision bias current generation for op-amp input stages and active load circuits in industrial sensor front-ends.

IC Role / Device Role / Timing Role: Dual NPN matched pair acting as bidirectional current reference with thermal tracking.

Use Value: Achieves <0.5% current error over −40 °C to +85 °C due to monolithic matching and shared thermal mass.

Use Scenario: Input stage of programmable gain instrumentation amplifier for 4–20 mA loop receivers.

IC Role / Device Role / Timing Role: Discrete differential pair providing high CMRR and low input offset before integrated gain stages.

Use Value: Delivers >86 dB CMRR at 1 kHz using matched hFE and VBE, eliminating need for laser-trimmed ICs.

Active Load Temperature-Stable Reference

Use Scenario: High-impedance active load in discrete voltage regulator error amplifiers for telecom power supplies.

IC Role / Device Role / Timing Role: Constant-current sink replacing resistor-based loads to improve PSRR and open-loop gain.

Use Value: Enables >90 dB PSRR by eliminating resistor thermal drift and supporting dynamic impedance >1 MΩ.

Use Scenario: Core element of a two-transistor bandgap-like reference in battery-powered medical monitors.

IC Role / Device Role / Timing Role: Matched pair generating ΔVBE proportional to absolute temperature (PTAT) for curvature correction.

Use Value: Provides <±20 ppm/°C output drift over 0–70 °C when combined with external resistors and trimming.

Equivalent & Alternatives

The following parts are listed as comparable options for similar matched dual NPN transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
BC847BPDW1T1G hFE matching ratio unspecified; VBE matching not characterized; SOT363 package but no guaranteed monolithic matching. Limited to non-critical biasing; unsuitable for precision current mirrors requiring <1% error. Select only if cost sensitivity outweighs matching performance; verify lot-to-lot hFE spread in production.
MBT3904DW1T1G Specified hFE min/max only (100–300); no VBE matching data; higher VCEO (40 V) but lower fT (300 MHz typical). Acceptable for general-purpose differential pairs but lacks guaranteed matching for metrology-grade designs. Use where thermal tracking is less critical than raw speed; requires external calibration for offset cancellation.

Compared with BC847BPDW1T1G and MBT3904DW1T1G, PMP4201Y/DG/B2,115 uniquely provides factory-characterized hFE and VBE matching - delivering deterministic analog performance without post-layout trimming or binning.

Availability

PMP4201Y/DG/B2,115 is available at Aetrix Electronics and suitable for industrial sensor signal conditioning, precision current source design, instrumentation amplifier input stages, and temperature-stable reference circuits requiring stable component supply across multi-year production cycles.

Supply support for PMP4201Y/DG/B2,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.

This device belongs to NXP's precision analog discretes product line, engineered specifically for high-accuracy linear circuits where parameter matching, thermal coupling, and long-term stability supersede raw switching speed or power handling.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature (Tj) is 150 °C, as defined in Table 6 of the NXP datasheet. Operation above this threshold risks permanent degradation of hFE matching and VBE symmetry. Derating is required above Tamb = 25 °C using Rth(j-a) = 416 K/W (per device) to ensure Tj remains within limit under full 300 mW dissipation.

Can PMP4201Y/DG/B2,115 be used in common-base configurations?

Yes - the fully isolated internal structure allows independent connection of each transistor's emitter, base, and collector. Common-base use is supported, though the datasheet characterizes matching only under common-emitter test conditions (VCE = 5 V, IC = 2 mA). Performance in common-base mode must be validated per application, as hFE matching does not directly translate to α matching.

Is the SOT363 package lead-free and RoHS-compliant?

Yes - the PMP4201Y/DG/B2,115 is manufactured in accordance with NXP's standard RoHS-compliant process. The SOT363 package uses matte tin (Sn) lead finish, and the device meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1), permitting unlimited floor life at ≤30 °C/60% RH.

How does the 2 mV VBE matching tolerance impact input offset in a differential pair?

When used as the input pair of a discrete differential amplifier with 1 mA tail current and 1 kΩ collector loads, the 2 mV VBE mismatch directly contributes ≈2 mV input-referred offset. This corresponds to <0.2% of full-scale for a 1 V output swing, making it suitable for 10-bit-equivalent precision without nulling circuitry.

PMP4201Y/DG/B2,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
2 NPN (Dual)
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
45V
Vce Saturation (Max) @ Ib, Ic:
400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):
15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 2mA, 5V
Power - Max:
200mW
Frequency - Transition:
100MHz
Operating Temperature:
150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
6-TSSOP

PMP4201Y/DG/B2,115 FAQ

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Please submit a Request for Quotation (RFQ) for PMP4201Y/DG/B2,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of PMP4201Y/DG/B2,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMP4201Y/DG/B2,115 is usually 5 days.

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5.How can I obtain technical support or documentation for PMP4201Y/DG/B2,115?

For technical support, including PMP4201Y/DG/B2,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMP4201Y/DG/B2,115 requirements.

6.How does Aetrix verify that PMP4201Y/DG/B2,115 is sourced from the original manufacturer or authorized distributors?

All PMP4201Y/DG/B2,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMP4201Y/DG/B2,115 meets industry standards.

7.What is the process for return or replacement of PMP4201Y/DG/B2,115?

All PMP4201Y/DG/B2,115 units undergo pre-shipment inspection (PSI). If there is an issue with PMP4201Y/DG/B2,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMP4201Y/DG/B2,115 part is unused and in its original packaging.

Return procedure for PMP4201Y/DG/B2,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PMP4201Y/DG/B2,115 Tags

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