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Nexperia USA Inc. PMP4501QASZ

Part No.:
PMP4501QASZ
Manufacturer:
Nexperia USA Inc.
Category:
Bipolar Transistor Arrays
Package:
6-XFDFN Exposed Pad
Datasheet:
AetrixPMP4501QASZ.pdf
Description:
TRANS 2NPN 45V 100MA DFN1010B-6
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,095

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Product details

Overview

PMP4501QAS from Nexperia is an AEC-Q101-qualified NPN/NPN matched double transistor in a DFN1010B-6 (SOT1216) package, designed for precision analog functions requiring tight parameter matching. It delivers 45 V VCEO, 100 mA IC, and guaranteed hFE matching (0.95–1.05) and VBE matching (≤2 mV) at 2 mA/5 V, enabling high-accuracy current mirroring in automotive sensor signal conditioning circuits.

For engineers reviewing the PMP4501QAS datasheet, PMP4501QAS pinout, PMP4501QAS application, or PMP4501QAS equivalent, key selection criteria include dual-transistor matching tolerance, ultra-thin 0.37 mm profile for space-constrained PCBs, AEC-Q101 qualification for under-hood use, and thermal resistance of 358 K/W (per device) on FR4.

Technical Context

This matched pair integrates two identical NPN transistors on a single die within a thermally enhanced leadless DFN package, ensuring correlated thermal drift and minimized inter-transistor parameter variation. Its pinout (B1, B2, C2, E2, E1, C1) supports direct differential configuration without external routing asymmetry.

The device operates with VCEO = 45 V and IC = 100 mA per transistor, while maintaining low VCE(sat) ≤ 400 mV at 100 mA/5 mA drive and fT ≥ 100 MHz - enabling stable operation in both DC biasing and moderate-frequency analog feedback loops.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 45 V - Maximum safe collector-emitter voltage with base open; defines upper rail limit in current mirror or amplifier stages.
IC 100 mA - Continuous collector current per transistor; sets usable dynamic range for biasing and small-signal amplification.
hFE1/hFE2 0.95–1.05 - Ratio of DC current gains between transistors; ensures ≤5% gain mismatch for balanced differential operation.
VBE1−VBE2 ≤2 mV - Absolute difference in base-emitter voltage at 2 mA/5 V; enables sub-0.1% current ratio accuracy in mirrors.
Rth(j-a) (per device) 358 K/W - Junction-to-ambient thermal resistance on FR4 PCB; determines maximum power dissipation before Tj exceeds 150 °C.
Ptot (per device) 350 mW - Total power dissipation limit at Tamb ≤ 25 °C; constrains combined static + dynamic losses in dual-transistor layout.
fT ≥100 MHz - Transition frequency at 10 mA/5 V; supports stable closed-loop behavior up to ~10 MHz in emitter-coupled configurations.

Pinout & Package

DFN1010B-6 (SOT1216) is a 0.37 mm height, 1.05 × 1.05 mm leadless plastic package with exposed thermal pad, optimized for automated placement and high-density automotive PCBs.

Pin/Terminal Circuit Role Design Meaning
1 B1 Base of transistor TR1 - referenced to E1 for independent bias control of first transistor.
2 B2 Base of transistor TR2 - referenced to E2 for independent bias control of second transistor.
3 C2 Collector of TR2 - output node for TR2; electrically isolated from C1 to prevent cross-coupling in differential pairs.
4 E2 Emitter of TR2 - common reference for TR2; paired with B2/C2 to form complete second transistor unit.
5 E1 Emitter of TR1 - common reference for TR1; paired with B1/C1 to form complete first transistor unit.
6 C1 Collector of TR1 - output node for TR1; physically adjacent to C2 but electrically separate to preserve matching integrity.

Key Features

Feature Design Value
AEC-Q101 qualification Validated for automotive under-hood applications including engine control modules and body electronics.
Current gain matching (hFE1/hFE2) 0.95–1.05 tolerance ensures predictable current division in mirrored bias networks.
Base-emitter voltage matching (VBE1−VBE2) ≤2 mV at 2 mA enables <0.1% error in precision current sources without trimming.
Ultra-low profile (0.37 mm) Reduces board stack height in multi-layer ADAS sensor modules and compact ECUs.
Application-optimized pinout Adjacent emitter-collector pairs (E1/C1, E2/C2) minimize parasitic inductance in high-speed differential paths.

Applications

Current Mirror Differential Amplifier

Use Scenario: Precision bias current generation for op-amp input stages in automotive temperature sensors.

IC Role / Device Role / Timing Role: Dual-transistor current mirror providing matched reference current to front-end amplifiers.

Use Value: ≤2 mV VBE mismatch ensures <0.1% current tracking across −40 °C to 125 °C, eliminating calibration drift.

Use Scenario: Input stage of a wheel speed sensor signal conditioner in ABS modules.

IC Role / Device Role / Timing Role: Matched NPN pair forming emitter-coupled differential pair for noise-rejecting signal amplification.

Use Value: 0.95–1.05 hFE matching maintains common-mode rejection >65 dB over temperature and supply variation.

Active Load Temperature-Stable Reference

Use Scenario: High-impedance active load in a current-mode DAC output buffer for battery management ICs.

IC Role / Device Role / Timing Role: TR1 configured as diode-connected active load; TR2 as controlled current source.

Use Value: Matched thermal coefficients ensure load impedance stability across operating temperature range.

Use Scenario: Core element of a bandgap reference circuit in automotive microcontrollers.

IC Role / Device Role / Timing Role: Paired transistors generating ΔVBE for PTAT voltage generation.

Use Value: Tight VBE matching minimizes curvature error, achieving ±1.5 mV reference voltage drift from −40 °C to 150 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar matched NPN transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
BC847BDW1T1G SO-8 package; hFE matching ±10%, no VBE matching spec; non-AEC-Q101. Limited to industrial/commercial PCBs; unsuitable for automotive under-hood deployment. Select only if AEC-Q101 compliance and sub-2 mV VBE matching are not required.
MBT3904DW1T2G Same SOT-363 package; hFE matching ±15%; VBE matching not specified; AEC-Q101 qualified. Acceptable for less demanding automotive functions like LED driver biasing, but insufficient for precision mirrors. Choose when cost sensitivity outweighs matching performance, and thermal profile allows larger package.

Compared with BC847BDW1T1G and MBT3904DW1T2G, PMP4501QAS provides tighter VBE matching (≤2 mV vs. unspecified), superior hFE tolerance (±5% vs. ±10–15%), and lower thermal resistance (358 K/W vs. ≥450 K/W), making it uniquely suitable for high-accuracy automotive analog signal chains.

Availability

PMP4501QAS is available at Aetrix Electronics and suitable for automotive engine control units, ADAS sensor interfaces, and battery management systems requiring stable component supply with AEC-Q101 assurance and traceable sourcing.

Supply support for PMP4501QAS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components and advanced packaging.

PMP4501QAS belongs to Nexperia's AEC-Q101-qualified matched transistor family, engineered specifically for precision analog functions in automotive signal conditioning where parameter correlation and thermal stability are critical.

FAQ

Is PMP4501QAS suitable for reflow soldering on standard FR4 PCBs?

Yes - the DFN1010B-6 package is qualified for lead-free reflow per J-STD-020. Recommended footprint matches Nexperia's sot1216_fr land pattern (1.1 mm × 0.6 mm pads, 0.35 mm spacing), and thermal performance data assumes standard FR4 with single-sided 1 oz copper.

What is the maximum junction temperature and how does it affect continuous operation?

The absolute maximum junction temperature is 150 °C. At ambient temperatures above 25 °C, power derating applies: total device dissipation must be reduced linearly beyond 350 mW using the 358 K/W Rth(j-a) value, reaching zero allowable power at Tamb ≈ 125 °C on standard FR4.

Does the matching specification apply across the full automotive temperature range?

No - hFE and VBE matching values (0.95–1.05 and ≤2 mV) are specified at Tamb = 25 °C. However, the monolithic die construction ensures correlated thermal drift, and application data shows <0.2% current ratio degradation from −40 °C to 125 °C in properly biased mirror configurations.

Can PMP4501QAS replace discrete single-transistor solutions in existing designs?

Yes - its pinout supports direct substitution in dual-transistor layouts, but requires verification of PCB pad geometry (DFN1010B-6 vs. older SOT-363/SOT-353 footprints) and thermal relief design, as the 0.37 mm height and thermal pad demand updated stencil and reflow profiles.

PMP4501QASZ Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
6-XFDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
2 NPN (Dual)
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
45V
Vce Saturation (Max) @ Ib, Ic:
-
Current - Collector Cutoff (Max):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
-
Power - Max:
350mW
Frequency - Transition:
-
Operating Temperature:
-
Grade:
Automotive
Qualification:
AEC-Q100
Mounting Type:
Surface Mount
Supplier Device Package:
DFN1010B-6

PMP4501QASZ FAQ

1.How can I place an order for PMP4501QASZ through Aetrix?

Please submit a Request for Quotation (RFQ) for PMP4501QASZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMP4501QASZ reliable?

The price and inventory of PMP4501QASZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMP4501QASZ is usually 5 days.

3.What payment methods are accepted for PMP4501QASZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMP4501QASZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMP4501QASZ?

PMP4501QASZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMP4501QASZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMP4501QASZ?

For technical support, including PMP4501QASZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMP4501QASZ requirements.

6.How does Aetrix verify that PMP4501QASZ is sourced from the original manufacturer or authorized distributors?

All PMP4501QASZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMP4501QASZ meets industry standards.

7.What is the process for return or replacement of PMP4501QASZ?

All PMP4501QASZ units undergo pre-shipment inspection (PSI). If there is an issue with PMP4501QASZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMP4501QASZ part is unused and in its original packaging.

Return procedure for PMP4501QASZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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