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Nexperia USA Inc. PMP5201Y/DG/B2,115
- Part No.:
- PMP5201Y/DG/B2,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
PMP5201Y/DG/B2,115.pdf
- Description:
- TRANS 2PNP 45V 100MA 6-TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:6,389
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Product details
Overview
PMP5201Y/DG/B2,115 from NXP Semiconductors is a matched PNP/PNP double transistor in SOT363 (SC-88) package, designed for precision analog functions requiring tight parameter matching between two transistors. It delivers hFE matching ratio ≥0.98, VBE matching ≤2 mV, and −45 V VCEO, supporting current mirror and differential amplifier circuits in industrial sensor signal conditioning and precision biasing networks.
For engineers reviewing the PMP5201Y/DG/B2,115 datasheet, PMP5201Y/DG/B2,115 pinout, PMP5201Y/DG/B2,115 application, or PMP5201Y/DG/B2,115 equivalent, key selection criteria include matched hFE tolerance, low VBE mismatch, thermal resistance of 416 K/W per device, and compatibility with reflow-only soldering on FR4 PCBs.
Technical Context
This dual PNP transistor operates in common-emitter configuration with fully isolated internal die structures. Its matched characteristics are specified at VCE = −5 V and IC = −2 mA, enabling stable DC operating point replication across both devices under identical thermal conditions.
The SOT363 package provides six discrete terminals with dedicated base, collector, and emitter pins for each transistor-no shared terminals-ensuring independent biasing and eliminating crosstalk in high-accuracy current steering applications such as active load mirrors and emitter-coupled pairs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −45 V: Maximum safe collector-emitter voltage before breakdown; enables use in −36 V rail systems with 20% margin. |
| IC | −100 mA: Continuous collector current per transistor; supports medium-current mirror legs and bias sources. |
| hFE | 200–450 at IC = −2 mA: High DC gain ensures low base drive requirements in low-power analog stages. |
| hFE1/hFE2 | ≥0.98: Ratio of smaller/larger hFE values; guarantees ≤2% current gain mismatch in mirrored configurations. |
| VBE1−VBE2 | ≤2 mV: Measured base-emitter voltage difference at IC = −2 mA; critical for sub-mV offset cancellation in differential pairs. |
| Ptot (per device) | 300 mW at Tamb ≤25 °C: Total dissipation limit for both transistors; defines maximum combined power in compact layouts. |
| Rth(j-a) | 416 K/W: Junction-to-ambient thermal resistance per device on FR4; determines temperature rise under steady-state load. |
Pinout & Package
SOT363 (SC-88) is a 6-pin, surface-mount plastic package measuring 2.2 mm × 1.35 mm × 0.95 mm, optimized for automated placement and reflow soldering only. Pin 1 is marked by a dot or beveled corner.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base TR1 | Independent base connection for first PNP transistor; allows separate bias control in split-input topologies. |
| 2 | Base TR2 | Independent base connection for second PNP transistor; enables differential base drive or feedback injection. |
| 3 | Collector TR2 | Output node for TR2; used as active load or current sink in mirror configurations. |
| 4 | Emiter TR2 | Reference terminal for TR2; tied to common emitter node in differential amplifiers. |
| 5 | Emiter TR1 | Reference terminal for TR1; forms matched emitter pair with Pin 4 for balanced current splitting. |
| 6 | Collector TR1 | Output node for TR1; serves as main output current source in current mirror implementations. |
Key Features
| Feature | Design Value |
|---|---|
| Current gain matching | hFE1/hFE2 ≥0.98 ensures ≤2% current error in mirrored loads without trimming resistors. |
| Base-emitter voltage matching | VBE1−VBE2 ≤2 mV minimizes input offset in emitter-coupled differential pairs at 2 mA bias. |
| Fully isolated internal structure | No shared substrate or epitaxial layers between transistors; eliminates leakage-induced coupling and thermal crosstalk. |
| Application-optimized pinout | Dedicated base/collector/emitter pins per transistor enable direct implementation of Fig 9 (current mirror) and Fig 10 (differential amplifier) without routing compromises. |
Applications
| Current Mirror | Differential Amplifier |
|---|---|
Use Scenario: Precision current replication in sensor front-end biasing where reference current must be duplicated with <1% error across temperature. IC Role / Device Role / Timing Role: Dual PNP acts as active current source/sink pair with matched hFE and VBE ensuring stable mirroring ratio. Use Value: Eliminates need for external laser-trimmed resistors; maintains ±0.5% current match from −55 °C to +100 °C. |
Use Scenario: Input stage of instrumentation amplifier for industrial pressure transducers with millivolt-level output signals. IC Role / Device Role / Timing Role: Forms matched emitter-coupled pair providing common-mode rejection and linear small-signal amplification. Use Value: 2 mV VBE mismatch contributes <0.1 mV input-referred offset at 100× gain, meeting <10 µV/V CMRR requirement. |
| Active Load Circuit | Temperature-Stable Bias Generator |
Use Scenario: Replacement for high-value resistive loads in op-amp output stages to improve slew rate and linearity. IC Role / Device Role / Timing Role: TR2 configured as constant-current active load; TR1 as gain transistor with matched thermal tracking. Use Value: Enables >10× higher small-signal gain than resistor-loaded equivalents while maintaining thermal stability over 125 °C range. |
Use Scenario: Reference current source for bandgap voltage generators in automotive microcontrollers requiring <50 ppm/°C drift. IC Role / Device Role / Timing Role: Paired transistors generate PTAT (proportional-to-absolute-temperature) current with matched thermal coefficients. Use Value: hFE and VBE matching reduces curvature error in PTAT current, achieving <±0.5% drift from −40 °C to +125 °C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar matched PNP/PNP transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC847BPDW1T1G | hFE matching ratio 0.95; VBE mismatch up to 5 mV; SOT363 package; lower max VCEO (−45 V same), but higher IC rating (−100 mA same). | Higher VBE mismatch limits use in sub-mV offset-critical differential pairs; suitable for less demanding current mirrors. | Select when cost sensitivity outweighs <2 mV VBE requirement and thermal crosstalk is mitigated by layout. |
| MBT3906DW1T1G | hFE matching not specified; VBE matching not characterized; SOT363 package; identical VCEO (−45 V) and IC (−100 mA); higher fT (250 MHz vs 175 MHz). | Lacks factory-matched parameters; requires post-manufacture binning or external trimming for precision analog use. | Choose only for non-critical biasing where matching is handled externally or via feedback, not for intrinsic matched-pair functions. |
Compared with BC847BPDW1T1G and MBT3906DW1T1G, PMP5201Y/DG/B2,115 uniquely guarantees ≤2 mV VBE mismatch and ≥0.98 hFE ratio at production test-enabling drop-in replacement in current mirror and differential amplifier designs without calibration or trimming.
Availability
PMP5201Y/DG/B2,115 is available at Aetrix Electronics and suitable for industrial sensor signal conditioning, precision bias generation, and differential amplifier front-ends requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for PMP5201Y/DG/B2,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.
This device belongs to NXP's precision analog transistor family, engineered specifically for high-matching performance in SMT-packaged dual-transistor configurations used in metrology-grade analog signal paths.
FAQ
Is PMP5201Y/DG/B2,115 pin-compatible with other SOT363 dual transistors?
Yes-PMP5201Y/DG/B2,115 uses standard SOT363 pinout (Pin 1 = Base TR1, Pin 2 = Base TR2, etc.) per JEDEC MO-178. It shares identical mechanical footprint and solder pad layout with BC847BPDW1T1G and MBT3906DW1T1G, enabling direct PCB replacement if electrical matching requirements permit.
What is the maximum allowable continuous power dissipation per transistor?
Per transistor, PMP5201Y/DG/B2,115 has a maximum power dissipation of 200 mW at Tamb ≤25 °C on FR4 PCB with single-sided copper. As a dual-device unit, total dissipation is rated at 300 mW-meaning simultaneous operation must stay within this aggregate limit to avoid junction overheating beyond 150 °C.
Does this part support wave soldering?
No-reflow soldering is the only recommended method per NXP's data sheet (Section 11). Wave soldering is explicitly excluded due to thermal stress risks on the plastic SOT363 body and potential damage to internal die bonds; using wave soldering voids reliability guarantees and may cause parametric shift or latent failure.
How is hFE matching defined in the datasheet?
hFE matching is defined as the ratio of the smaller hFE value to the larger hFE value measured on the two transistors at VCE = −5 V and IC = −2 mA. A value of 0.98 means the two hFE values differ by no more than 2%, confirmed during final test screening-not statistical correlation or typical behavior.
PMP5201Y/DG/B2,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- 2 PNP (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 45V
- Vce Saturation (Max) @ Ib, Ic:
- 400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 5V
- Power - Max:
- 200mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
PMP5201Y/DG/B2,115 FAQ
1.How can I place an order for PMP5201Y/DG/B2,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMP5201Y/DG/B2,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMP5201Y/DG/B2,115 reliable?
The price and inventory of PMP5201Y/DG/B2,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMP5201Y/DG/B2,115 is usually 5 days.
3.What payment methods are accepted for PMP5201Y/DG/B2,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMP5201Y/DG/B2,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMP5201Y/DG/B2,115?
PMP5201Y/DG/B2,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMP5201Y/DG/B2,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMP5201Y/DG/B2,115?
For technical support, including PMP5201Y/DG/B2,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMP5201Y/DG/B2,115 requirements.
6.How does Aetrix verify that PMP5201Y/DG/B2,115 is sourced from the original manufacturer or authorized distributors?
All PMP5201Y/DG/B2,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMP5201Y/DG/B2,115 meets industry standards.
7.What is the process for return or replacement of PMP5201Y/DG/B2,115?
All PMP5201Y/DG/B2,115 units undergo pre-shipment inspection (PSI). If there is an issue with PMP5201Y/DG/B2,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMP5201Y/DG/B2,115 part is unused and in its original packaging.
Return procedure for PMP5201Y/DG/B2,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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