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Nexperia USA Inc. PNE20060EPEZ
- Part No.:
- PNE20060EPEZ
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Diodes
- Package:
- TO-277, 3-PowerDFN
- Datasheet:
-
PNE20060EPEZ.pdf
- Description:
- DIODE GEN PURP 200V 6A CFP15B
- Quantity:
- Payment:
- Shipping:
Inventory:9,718
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Product details
Overview
PNE20060EPE from Nexperia is a hyperfast recovery rectifier optimized for high-efficiency, high-frequency switching applications. It delivers 200 V reverse voltage rating, 6 A average forward current, and ≤30 ns reverse recovery time (trr), with planar die technology and clip-bond construction enabling high power density in automotive-grade ECU and freewheeling circuits.
For engineers reviewing the PNE20060EPE datasheet, PNE20060EPE pinout, PNE20060EPE application, or PNE20060EPE equivalent, key selection criteria include trr ≤30 ns at 25 °C, VF = 740–800 mV at IF = 6 A / Tj = 125 °C, dual-anode configuration for parallel conduction, and CFP15B thermal performance with Rth(j-sp) = 70 K/W on 1 cm² cathode pad.
Technical Context
This device uses Pt-doped lifetime control to achieve hyperfast switching with low Qrr and minimal VFRM (820 mV peak forward recovery voltage). Its dual-anode (A1/A2) and single-cathode (K) structure supports symmetrical current sharing and reduced parasitic inductance in high-di/dt freewheeling paths.
The CFP15B package integrates a thermally enhanced clip-bond interconnect and flat lead design, delivering 2.15 W total power dissipation at Tamb ≤ 25 °C with cathode pad, and junction temperature capability up to 175 °C - critical for under-hood ECU and industrial motor drive environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VR / VRRM | 200 V - Maximum repetitive reverse blocking voltage; defines safe operating range in DC-link and flyback snubber circuits. |
| IF(AV) | 6 A - Average forward current at δ = 0.5, f = 20 kHz square wave, Tsp ≤ 170 °C; enables compact layout in space-constrained SMD designs. |
| trr | 14–30 ns - Reverse recovery time measured at IF = 0.5 A, IR = 1 A, IR(meas) = 0.25 A, Tj = 25 °C; ensures minimal switching loss in >100 kHz SMPS. |
| VF @ 6 A / 125 °C | 740–800 mV - Forward voltage drop under elevated junction temperature; directly impacts conduction loss and thermal management in continuous operation. |
| IR @ 200 V / 125 °C | 2–15 µA - High-temperature reverse leakage; supports stable blocking in hot ambient environments without thermal runaway risk. |
| Cd @ 4 V / 1 MHz | 65 pF - Junction capacitance; low value minimizes capacitive turn-on loss and EMI generation during hard-switching transitions. |
| Rth(j-sp) | 70 K/W - Thermal resistance from junction to solder point with 1 cm² cathode pad; enables direct thermal coupling to PCB copper for passive cooling. |
Pinout & Package
Encapsulated in CFP15B (SOT1289B): ultra-thin surface-mount plastic package with 3 leads, 2.13 mm pitch, 5.8 × 4.3 × 0.95 mm body, and thermal-enhanced clip-bond construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (A1) | Anode 1 | Primary anode terminal; electrically identical to A2; enables dual-path current injection for lower effective series resistance and balanced thermal distribution. |
| 2 (A2) | Anode 2 | Secondary anode terminal; used in parallel with A1 to reduce current density per bond wire and improve surge handling (IFSM = 150 A). |
| 3 (K) | Cathode | Single cathode tab with large copper area; serves as primary thermal interface and return path; solder pad must be ≥1 cm² for rated 2.15 W dissipation. |
Key Features
| Feature | Design Value |
|---|---|
| Hyperfast trr ≤30 ns | Enables efficient operation in 100–500 kHz switching converters without requiring active snubbers or complex gate drive compensation. |
| Clip-bond thermal architecture | Reduces thermal resistance by ~25% vs. standard wire-bond SMD diodes, supporting higher power density in compact ECU modules. |
| Dual-anode (A1/A2) configuration | Halves current per internal connection path, lowering resistive heating and improving reliability under pulsed overload conditions. |
| Planar die with Pt doping | Provides tightly controlled carrier lifetime for consistent trr across temperature and batch, minimizing design margin uncertainty. |
| Low-profile 0.95 mm height | Permits use in ultra-low-profile power supplies and stacked PCB assemblies where Z-axis clearance is constrained to <1.0 mm. |
Applications
| Engine Control Unit (ECU) | DC-DC Converter Freewheeling |
|---|---|
Use Scenario: High-temperature rectification in automotive engine bay power supplies, including 12 V/24 V input stage and auxiliary rail generation. IC Role / Device Role / Timing Role: Primary freewheeling diode in synchronous buck converters powering microcontrollers and sensors; handles 6 A continuous load with 150 A surge capability. Use Value: 175 °C junction rating and low IR (≤15 µA at 125 °C) prevent thermal runaway during prolonged idling or hot-soak conditions. |
Use Scenario: Output rectification in isolated flyback or forward converters operating at 200–300 kHz in industrial PLC power modules. IC Role / Device Role / Timing Role: Hyperfast recovery diode replacing Schottky alternatives where 200 V blocking is required and trr < 30 ns reduces switching loss. Use Value: 14 ns minimum trr and 820 mV VFRM minimize voltage overshoot and EMI during diode turn-off, easing filter design. |
| Reverse Polarity Protection | Motor Drive Flyback Clamp |
Use Scenario: Input protection circuit in battery-powered portable test equipment accepting 12–24 V DC inputs via barrel jack or terminal block. IC Role / Device Role / Timing Role: Series-connected rectifier configured as ideal diode replacement; blocks reverse voltage while conducting forward current with low VF. Use Value: 740 mV VF at 6 A / 125 °C limits power loss to <4.5 W, avoiding heatsink requirement in handheld enclosures. |
Use Scenario: Inductive energy clamp in brushed DC motor H-bridge drivers, absorbing back-EMF spikes during PWM commutation. IC Role / Device Role / Timing Role: Fast-recovery flyback diode across motor winding; conducts transient current within 30 ns to limit voltage rise to <200 V. Use Value: Dual-anode layout lowers dynamic impedance during high-di/dt events, reducing localized heating and improving long-term clamp reliability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar hyperfast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Vishay VS-6EWH02FN-M3 | 200 V / 6 A; trr = 25 ns (typ); VF = 850 mV @ 6 A / 25 °C; TO-277A package (higher Rth(j-a) = 110 K/W). | Higher VF increases conduction loss; larger footprint and taller profile (1.7 mm) limit use in ultra-thin designs. | Select when legacy TO-277A footprint compatibility is required and thermal budget allows higher VF penalty. |
| ON Semiconductor MUR620CT | 200 V / 6 A; trr = 35 ns (max); VF = 950 mV @ 6 A / 25 °C; TO-220AB package; dual-diode common-cathode. | Slower trr and higher VF increase switching loss; through-hole mounting incompatible with fully SMD production. | Choose only for prototyping or low-volume through-hole builds where cost outweighs efficiency and size constraints. |
Compared with VS-6EWH02FN-M3 and MUR620CT, PNE20060EPE offers superior thermal performance (Rth(j-sp) = 70 K/W), lowest VF at elevated temperature (740–800 mV), and smallest Z-height (0.95 mm), making it optimal for high-density, high-reliability SMD power stages.
Availability
PNE20060EPE is available at Aetrix Electronics and suitable for Engine Control Units (ECU), DC-DC converter freewheeling, and reverse polarity protection requiring stable component supply, automotive-grade reliability, and high-frequency rectification performance.
Supply support for PNE20060EPE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-performance, high-reliability discrete and logic devices, with leadership in automotive-qualified components and advanced packaging technologies.
PNE20060EPE belongs to Nexperia's hyperfast recovery rectifier product line, engineered specifically for high-efficiency, high-frequency power conversion in automotive and industrial environments where thermal density and switching speed are critical.
FAQ
What is the maximum allowable junction temperature for continuous operation?
The absolute maximum junction temperature (Tj) is 175 °C, and the device is rated for continuous operation up to this limit when mounted on an FR4 PCB with a 1 cm² cathode pad and maintained within its derated electrical boundaries. Derating curves in Figures 11–13 confirm VR remains at 200 V only below Tj = 125 °C; above that, reverse voltage must be reduced linearly to 0 V at 175 °C.
Can PNE20060EPE be used in parallel with another unit for higher current handling?
No - the dual-anode (A1/A2) configuration is internal to a single die and not intended for external paralleling. Attempting to parallel two PNE20060EPE units risks current imbalance due to VF mismatch and thermal coupling differences, potentially causing premature failure. For >6 A average current, select a higher-rated part such as PNE20100EPE (10 A).
Is the CFP15B package compatible with standard reflow profiles for lead-free soldering?
Yes - Nexperia specifies a JEDEC J-STD-020-compliant reflow profile for CFP15B, with peak temperature of 260 °C for ≤30 seconds and recommended stencil thickness of 0.125 mm. The package outline and solder land pattern in Figure 19 ensure reliable wetting and void-free solder joints when using the defined footprint and paste volume.
How does Pt doping affect the device's reliability under repeated thermal cycling?
Pt doping provides stable carrier lifetime control across temperature and operational life, preventing parameter drift in trr and VF over thousands of thermal cycles. Unlike gold-doped diodes, Pt-doped devices exhibit no degradation in reverse recovery characteristics after 1000+ cycles between −40 °C and +150 °C, as validated in Nexperia's AEC-Q101 qualification testing.
PNE20060EPEZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- TO-277, 3-PowerDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 200 V
- Current - Average Rectified (Io):
- 6A
- Voltage - Forward (Vf) (Max) @ If:
- 940 mV @ 6 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 30 ns
- Current - Reverse Leakage @ Vr:
- 1 µA @ 200 V
- Capacitance @ Vr, F:
- 65pF @ 4V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- CFP15B
- Operating Temperature - Junction:
- 175°C
PNE20060EPEZ FAQ
1.How can I place an order for PNE20060EPEZ through Aetrix?
Please submit a Request for Quotation (RFQ) for PNE20060EPEZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PNE20060EPEZ reliable?
The price and inventory of PNE20060EPEZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PNE20060EPEZ is usually 5 days.
3.What payment methods are accepted for PNE20060EPEZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PNE20060EPEZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PNE20060EPEZ?
PNE20060EPEZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PNE20060EPEZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PNE20060EPEZ?
For technical support, including PNE20060EPEZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PNE20060EPEZ requirements.
6.How does Aetrix verify that PNE20060EPEZ is sourced from the original manufacturer or authorized distributors?
All PNE20060EPEZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PNE20060EPEZ meets industry standards.
7.What is the process for return or replacement of PNE20060EPEZ?
All PNE20060EPEZ units undergo pre-shipment inspection (PSI). If there is an issue with PNE20060EPEZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PNE20060EPEZ part is unused and in its original packaging.
Return procedure for PNE20060EPEZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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